公开(公告)号：US07769352B2

公开(公告)日：2010-08-03

申请号：US11568365

申请日：2006-09-25

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H04B1/40 ,  H04B7/00 ,  H04L27/22

CPC分类号： H04L27/2272 ,  H03C3/0966 ,  H03D3/242 ,  H04B1/38 ,  H04L27/2273 ,  H04L2027/0016 ,  H04L2027/0022 ,  H04L2027/0055 ,  H04W56/00 ,  H04W88/02 ,  Y02D70/1222 ,  Y02D70/40

摘要： A receiver has a first voltage control oscillator configured to generate a first oscillation signal, a second voltage control oscillator configured to generate a second oscillation signal having a first phase, a first phase comparator configured to detect a phase difference between the first and second oscillation signals, a demodulator configured to perform demodulation processing of the received signal and to generate timing information of a second phase included in the first oscillation signal, a second phase comparator configured to detect the phase difference between the first and second oscillation signals, and a first control voltage generator configured to generate a first control voltage for controlling a phase and a frequency of the second voltage control oscillator based on the phase difference detected by the second phase comparator.

摘要翻译： 一种接收器具有：第一电压控制振荡器，被配置为产生第一振荡信号;第二压控振荡器，被配置为产生具有第一相位的第二振荡信号;第一相位比较器，被配置为检测第一和第二振荡信号之间的相位差; 解调器，被配置为执行所述接收信号的解调处理并生成包括在所述第一振荡信号中的第二相位的定时信息;第二相位比较器，被配置为检测所述第一和第二振荡信号之间的相位差;以及第一控制 电压发生器被配置为基于由第二相位比较器检测的相位差产生用于控制第二压控振荡器的相位和频率的第一控制电压。

公开(公告)号：US07215066B2

公开(公告)日：2007-05-08

申请号：US11196596

申请日：2005-08-04

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H01L41/053

CPC分类号： H01H57/00 ,  H01G5/18 ,  H01G5/38 ,  H01H2057/006 ,  H01L41/094 ,  H01L41/0946 ,  H01L41/0953 ,  Y10S977/837

摘要： A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

摘要翻译： 压电致动器包括第一梁，该第一梁包括第一底电极，第一底电极上的第一压电膜和第一压电膜上的第一顶电极，分配在第一梁的端部并固定在基板上的固定端 ，分配在第一梁的另一端并悬挂在自由空间上的连接端; 以及第二光束，包括在连接端连接到第一压电膜的第二压电膜，第二压电膜下的第二底电极和第二压电膜上的第二顶电极，分配在第二压电膜的端部的工作端 第二梁相对于连接端被分配并悬挂在自由空间上的另一端; 其中固定端和工作端的中心之间的距离短于从工作端到连接端的距离。

公开(公告)号：US20060055287A1

公开(公告)日：2006-03-16

申请号：US11196596

申请日：2005-08-04

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H01L41/04

CPC分类号： H01H57/00 ,  H01G5/18 ,  H01G5/38 ,  H01H2057/006 ,  H01L41/094 ,  H01L41/0946 ,  H01L41/0953 ,  Y10S977/837

摘要： A piezoelectric actuator includes a first beam including a first bottom electrode, a first piezoelectric film on the first bottom electrode, and a first top electrode on the first piezoelectric film, a fixed end assigned at an end of the first beam and fixed on a substrate, a connecting end assigned at another end of the first beam and suspended over a free space; and a second beam including a second piezoelectric film connected to the first piezoelectric film at the connecting end, a second bottom electrode under the second piezoelectric film, and a second top electrode on the second piezoelectric film, a working end assigned at an end of the second beam opposite to another end to which the connecting end is assigned and suspended over the free space; wherein a distance between centers of the fixed end and the working end is shorter than a distance from the working end to the connecting end.

摘要翻译： 压电致动器包括第一梁，该第一梁包括第一底电极，第一底电极上的第一压电膜和第一压电膜上的第一顶电极，分配在第一梁的端部并固定在基板上的固定端 ，分配在第一梁的另一端并悬挂在自由空间上的连接端; 以及第二光束，包括在连接端连接到第一压电膜的第二压电膜，第二压电膜下的第二底电极和第二压电膜上的第二顶电极，分配在第二压电膜的端部的工作端 第二梁相对于连接端被分配并悬挂在自由空间上的另一端; 其中固定端和工作端的中心之间的距离短于从工作端到连接端的距离。

公开(公告)号：US5889696A

公开(公告)日：1999-03-30

申请号：US45958

申请日：1998-03-23

申请人： Takashi Kawakubo ,  Noburu Fukushima ,  Kazuhide Abe

发明人： Takashi Kawakubo ,  Noburu Fukushima ,  Kazuhide Abe

IPC分类号： H01L27/10 ,  G11C11/22 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108

CPC分类号： G11C11/22

摘要： A semiconductor memory device is constituted by arranging a plurality of memory cells in a matrix format, each of which includes a thin-film capacitor having a ferroelectric film and a pair of electrodes facing each other via the ferroelectric film, and a transfer gate transistor connected to the thin film capacitor. A voltage corresponding to the width of a hysteresis curve obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 20% or lower of the voltage difference between the positive and negative directions in a writing operation. A remanent polarization amount obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 30% or lower of the total polarization amount obtained upon application of a voltage in the writing operation.

摘要翻译： 半导体存储器件通过以矩阵形式布置多个存储单元而构成，每个存储单元包括具有铁电膜的薄膜电容器和经由铁电体膜相互面对的一对电极，并且连接有传输栅极晶体管 到薄膜电容器。 当薄膜电容器饱和和极化时获得的滞后曲线的宽度对应的电压落在写入操作中正负方向之间的电压差的5％以上至20％以下的范围内。 当薄膜电容器饱和和极化时获得的剩余极化量落在在写入操作中施加电压时获得的总极化量的5％以上至30％以下的范围内。

公开(公告)号：US07471031B2

公开(公告)日：2008-12-30

申请号：US11229694

申请日：2005-09-20

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Tomio Ono

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki ,  Tomio Ono

IPC分类号： H01L41/09

CPC分类号： H03H9/542 ,  H01G5/16 ,  H01H57/00 ,  H01H2057/006 ,  H03H9/605 ,  H03H2007/008 ,  H03H2210/025 ,  H03H2210/033

摘要： In a MEMS type variable capacity having a piezoelectric driving mechanism, a movable head having movable electrodes are arranged thereon, stationary electrodes is positioned to face the movable electrodes, and a piezoelectric driving beam structure is joined to the movable head and have one end fixed to the substrate. The movable electrode and the stationary electrode form a variable capacity. In the variable capacity, the distance and capacitance between the movable electrode and the stationary electrode of the variable capacity can be maintained constant so as to realize a reproducibility and a reliable controllability.

摘要翻译： 在具有压电驱动机构的MEMS型可变容量中，具有可移动电极的可动头布置在其上，固定电极被定位成面对可动电极，并且压电驱动梁结构接合到可动头部，并且一端固定到 底物。 可动电极和固定电极形成可变容量。 在可变容量中，可变电容和可变电容的固定电极之间的距离和电容可以保持恒定，从而实现再现性和可靠的可控性。

公开(公告)号：US20080254756A1

公开(公告)日：2008-10-16

申请号：US11568365

申请日：2006-09-25

申请人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

发明人： Takashi Kawakubo ,  Toshihiko Nagano ,  Kazuhide Abe ,  Michihiko Nishigaki

IPC分类号： H04B1/16 ,  H04B1/38

CPC分类号： H04L27/2272 ,  H03C3/0966 ,  H03D3/242 ,  H04B1/38 ,  H04L27/2273 ,  H04L2027/0016 ,  H04L2027/0022 ,  H04L2027/0055 ,  H04W56/00 ,  H04W88/02 ,  Y02D70/1222 ,  Y02D70/40

摘要： A receiver has a first voltage control oscillator configured to generate a first oscillation signal, a second voltage control oscillator configured to generate a second oscillation signal having a first phase, a first phase comparator configured to detect a phase difference between the first and second oscillation signals, a demodulator configured to perform demodulation processing of the received signal and to generate timing information of a second phase included in the first oscillation signal, a second phase comparator configured to detect the phase difference between the first and second oscillation signals, and a first control voltage generator configured to generate a first control voltage for controlling a phase and a frequency of the second voltage control oscillator based on the phase difference detected by the second phase comparator.

摘要翻译： 一种接收器具有：第一电压控制振荡器，被配置为产生第一振荡信号;第二压控振荡器，被配置为产生具有第一相位的第二振荡信号;第一相位比较器，被配置为检测第一和第二振荡信号之间的相位差; 解调器，被配置为执行所述接收信号的解调处理并生成包括在所述第一振荡信号中的第二相位的定时信息;第二相位比较器，被配置为检测所述第一和第二振荡信号之间的相位差;以及第一控制 电压发生器被配置为基于由第二相位比较器检测的相位差产生用于控制第二压控振荡器的相位和频率的第一控制电压。

公开(公告)号：US06797957B2

公开(公告)日：2004-09-28

申请号：US10097405

申请日：2002-03-15

申请人： Takashi Kawakubo ,  Kazuhide Abe ,  Kenya Sano

发明人： Takashi Kawakubo ,  Kazuhide Abe ,  Kenya Sano

IPC分类号： H01L3702

CPC分类号： H01L37/02

摘要： An infrared detection element having a single-crystalline base layer 3 with a thickness of 50 nm to 10 &mgr;m having a principal surface, a first electrode layer 4 formed on the principal surface of the single-crystalline base layer 3, a ferroelectric layer 5 which is formed on the first electrode layer 4 and is composed of a single-crystalline layer or a unidirectionally oriented layer. Distortion of the single-crystalline layer or a unidirectionally oriented layer in a surface parallel to the principal surface of the single-crystalline base layer 3 is elastically constrained by the single-crystalline base layer 3. The infrared detection element further has a second electrode layer 6 formed on the ferroelectric layer 5. An amount of charge varies with changes in temperature caused by irradiation of infrared light to the ferroelectric layer 5.

摘要翻译： 具有厚度为50nm〜10μm的具有主面的单晶基底层3的红外线检测元件，形成在单晶基底层3的主面上的第一电极层4，强电介质层5 形成在第一电极层4上，由单晶层或单向取向层构成。 在与单晶基底层3的主表面平行的表面中的单晶层或单向取向层的失真由单晶基底层3弹性约束。红外线检测元件还具有第二电极层 形成在铁电层5上。电荷量随着红外光照射到铁电层5而引起的温度变化。

公开(公告)号：US06533906B2

公开(公告)日：2003-03-18

申请号：US09795479

申请日：2001-03-01

申请人： Takashi Kawakubo ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Naoko Yanase

发明人： Takashi Kawakubo ,  Takaaki Yasumoto ,  Kazuhide Abe ,  Naoko Yanase

IPC分类号： C23C1434

CPC分类号： C23C14/345 ,  C23C14/0068 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/352 ,  C30B23/02 ,  C30B29/22 ,  C30B29/32 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L28/55

摘要： A method of manufacturing an epitaxially-strained lattice film of an oxide, in which epitaxially-strained lattices having a good crystalline property are formed by applying RF power to a substrate holder and irradiating positive ions having a moderate energy while preventing damage to the strained lattice film to be stacked by oxygen negative ions. This method simultaneously overcomes both the problem of damage to the film by irradiation of oxygen negative ions, which is peculiar to sputtering of oxides, and the problem of failure to strain due to relaxation of the strain during deposition.

摘要翻译： 制造具有良好结晶特性的外延应变晶格的氧化物的外延应变晶格膜的方法通过向衬底保持器施加RF功率并照射具有中等能量的正离子而形成，同时防止对应变晶格的损伤 膜由氧负离子堆叠。 该方法同时克服了通过照射氧负离子（这是氧化物溅射所特有的）对膜的损坏的问题，以及由于沉积期间的应变松弛而导致的不能应变的问题。

公开(公告)号：US5889299A

公开(公告)日：1999-03-30

申请号：US804394

申请日：1997-02-21

申请人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Shuichi Komatsu ,  Mitsuaki Izuha ,  Noburu Fukushima ,  Kenya Sano ,  Takashi Kawakubo

IPC分类号： H01L21/02 ,  H01L29/76

CPC分类号： H01L28/55

摘要： A thin film capacitor including a first electrode having on its surface a (100) face of cubic system or a (001) face of tetragonal system, a dielectric thin film epitaxially grown on the first electrode and exhibiting a crystal structure which inherently belongs to a perovskite structure of cubic system, and a second electrode formed on the dielectric thin film. Further, the dielectric thin film meets the following relationship V/V.sub.0 .gtoreq.1.01 where a unit lattice volume of true perovskite crystal structure belonging to the cubic system (lattice constant a.sub.0) is represented by V.sub.0 =a.sub.0.sup.3, and a unit lattice volume (lattice constant a=b.noteq.c) which is strained toward a tetragonal system after the epitaxial growth is represented by V=a.sup.2 c, and also meets the following relationship c/a.gtoreq.1.01 where c/a represents a ratio between a lattice constant "c" in the direction thicknesswise of the film and a lattice constant "a" in the direction parallel with a plane of the film.

摘要翻译： 一种薄膜电容器，包括在其表面上具有立方体系的（100）面或四方晶系的（001）面的第一电极，在第一电极上外延生长并呈现出固有地属于 立方体的钙钛矿结构，以及形成在电介质薄膜上的第二电极。 此外，电介质薄膜满足以下关系V / V0 / = 1.01，其中属于立方体系的真实钙钛矿晶体结构的单位晶格体积（晶格常数a0）由V0 = a03表示，单位晶格体积 晶格常数a = b NOTEQUAL c），其外延生长后由V = a2c表示为四方晶系，并满足以下关系c / a> / = 1.01其中c / a表示晶格常数 在膜的厚度方向上的“c”和与膜的平面平行的方向上的晶格常数“a”。

公开(公告)号：US08648431B2

公开(公告)日：2014-02-11

申请号：US13220116

申请日：2011-08-29

申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H01L29/84

CPC分类号： H03J3/20 ,  H03B5/326 ,  H03H9/02566

摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

摘要翻译： 根据一个实施例，声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元，并且输入电信号进入声共振单元。