Distributed feedback semiconductor laser
    21.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号:US4648096A

    公开(公告)日:1987-03-03

    申请号:US660934

    申请日:1984-10-15

    CPC分类号: H01S5/164 H01S5/12 H01S5/124

    摘要: A distributed feedback semiconductor laser which has periodic corrugations in a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of carriers into said light emitting layer. In accordance with the present invention, there are provided, in the neighborhood of the center of a laser region, a region for changing the phase of the periodic corrugations by about 180 degrees, and, on the extension of the laser oscillation region at both sides thereof, a window region formed of a semiconductor larger in energy gap but smaller in refractive index than the light emitting layer, the length of the window region being so limited as to prevent substantial reflection of laser output light in the window region.

    摘要翻译: 一种分布式反馈半导体激光器,其在光的行进方向上在发光层或邻接层中具有周期性波纹,并通过将载流子注入所述发光层来执行激光振荡。 根据本发明,在激光区域的中心附近设置用于将周期性波纹的相位改变约180度的区域,并且在两侧的激光振荡区域的延伸上 由能隙较大且折射率小于发光层的半导体形成的窗口区域,窗口区域的长度受到限制,以防止激光输出光在窗口区域中的实质反射。

    Distributed feedback semiconductor laser
    22.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号:US4633474A

    公开(公告)日:1986-12-30

    申请号:US678244

    申请日:1984-12-05

    摘要: A distributed feedback semiconductor laser which has periodic corrugations formed in a layer adjoining a light emitting layer so as to extend in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer, in which a part of at least one metal electrode has a TM mode suppressing region disposed at a position where light is essentially distributed in the thickwise direction of the laser. A window region formed of a semiconductor larger in energy gap than the light emitting layer is disposed at both ends of the laser oscillation region in the direction of travel of light, the length of the window region being limited so that no substantial reflection occurs therein.

    摘要翻译: 一种分布式反馈半导体激光器,其具有在与发光层相邻的层中形成的周期性波纹,以沿着光的行进方向延伸,并且通过向发光层注入电流并执行激光振荡,其中, 至少一个金属电极具有设置在光在激光的厚度方向上基本分布的位置的TM模式抑制区域。 在光的行进方向上,在激光振荡区域的两端配置由能量差大于发光层的半导体形成的窗口区域,限制窗口区域的长度,使得不发生实质的反射。

    Semiconductor laser
    23.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号:US4573161A

    公开(公告)日:1986-02-25

    申请号:US556294

    申请日:1983-11-30

    摘要: A semiconductor laser, in which layers on both sides of the light emitting region are each formed by laminating a plurality of semiconductor layers of different energy band gaps and thicknesses smaller than 0.03 .mu.m. The thickness of the thin film layer of at least one kind of the semiconductor thin film layers of a thickness less than 0.03 .mu.m varies in dependence upon the layers remoteness from the light emitting region. The light emitting region and the layers on both sides of the light emitting region are each formed of a mixed crystal which consists of indium, gallium, arsenic and phosphorus, or indium, gallium, aluminum and arsenic and which has a lattice constant difference less than 0.3% relative to indium phosphide.

    摘要翻译: 通过层叠多个不同能带隙和小于0.03μm的厚度的半导体层,形成发光区域两侧的层的半导体激光器。 厚度小于0.03μm的至少一种半导体薄膜层的薄膜层的厚度根据与发光区域偏离的层次而变化。 发光区域和发光区域两侧的层均由铟,镓,砷和磷或铟,镓,铝和砷组成的混晶体形成,其晶格常数差小于 相对于磷化铟为0.3%。

    Semiconductor photo device
    26.
    发明授权
    Semiconductor photo device 失效
    半导体照相装置

    公开(公告)号:US4729004A

    公开(公告)日:1988-03-01

    申请号:US904775

    申请日:1986-09-05

    CPC分类号: H01L31/1075 H01L31/11

    摘要: A semiconductor photo detector provided with a photo detecting portion, in which at least three semiconductor layers of the same conductivity type and different energy gaps are formed in the order of magnitude of the energy gap, and in which another semiconductor layer which has the same composition as a first semiconductor layer having the largest energy gap among the at least three semiconductor layers but is different in conductivity type from the first semiconductor layer is formed in contact with the first semiconductor layer at the optical input side of the semiconductor photo diode.

    摘要翻译: 一种具有光电检测部分的半导体光电检测器,其中以能隙的数量级形成至少三个相同导电类型和不同能隙的半导体层,其中具有相同组成的另一半导体层 作为在所述至少三个半导体层中具有最大能隙但与所述第一半导体层不同的导电类型的第一半导体层与所述半导体光电二极管的光输入侧的第一半导体层接触形成。

    METHOD AND PHARMACEUTICAL COMPOSITION FOR TREATMENT OF MENTAL DISORDERS
    27.
    发明申请
    METHOD AND PHARMACEUTICAL COMPOSITION FOR TREATMENT OF MENTAL DISORDERS 审中-公开
    用于治疗精神障碍的方法和药物组合物

    公开(公告)号:US20110065749A1

    公开(公告)日:2011-03-17

    申请号:US12992681

    申请日:2009-06-02

    申请人: Kazuo Sakai

    发明人: Kazuo Sakai

    摘要: A method of treating a mental disorder including administering to a patient in need thereof, an effective amount of a pharmaceutical composition including 1,1-diphenyl-4-piperidine-1-ylbuthan-1-ol or a pharmaceutically acceptable salt thereof. The mental disorder is depression, bipolar disorder, anxiety disorder, impulsive disorder, bulimia, panic disorder, social anxiety disorder, insomnia, attention deficit hyperactivity disorder (ADHD), schizophrenia, dementia, personality disorder, alcoholism, dissociative disorder, sleep apnea syndrome, or fibromyalgia. In a preferred embodiment, the mental disorder as a therapeutic target is fibromyalgia, chronic fatigue syndrome (CFS), or depression with pain, and the administration of the pharmaceutical composition is capable of reducing the pain caused by these diseases.

    摘要翻译: 一种治疗精神障碍的方法,包括向有需要的患者施用有效量的包含1,1-二苯基-4-哌啶-1-基戊烷-1-醇或其药学上可接受的盐的药物组合物。 精神障碍是抑郁症,双相情感障碍,焦虑症,冲动性疾病,贪食症,惊恐障碍,社会焦虑症,失眠症,注意力缺陷多动障碍(ADHD),精神分裂症,痴呆,人格障碍,酒精中毒,解离障碍,睡眠呼吸暂停综合征, 或纤维肌痛。 在优选的实施方案中,作为治疗靶标的精神障碍是纤维肌痛,慢性疲劳综合征(CFS)或具有疼痛的抑郁症,并且药物组合物的施用能够减少由这些疾病引起的疼痛。

    Pharmaceutical Composition for Treating Bulimia and Depression Arising from Bulimia
    28.
    发明申请
    Pharmaceutical Composition for Treating Bulimia and Depression Arising from Bulimia 审中-公开
    用于治疗由暴食症引起的暴食和抑郁症的药物组合物

    公开(公告)号:US20090203738A1

    公开(公告)日:2009-08-13

    申请号:US11992426

    申请日:2006-09-22

    申请人: Kazuo Sakai

    发明人: Kazuo Sakai

    IPC分类号: A61K31/4353 A61K31/135

    摘要: Provided is a pharmaceutical composition for the treatment of bulimia in which a cholinesterase inhibitor is combined with at least one member selected from the group consisting of sibutramine, a pharmacologically acceptable salt thereof, an active metabolite thereof, a prodrug thereof and a solvate thereof. The pharmaceutical composition is useful in treating bulimia and depression arising from bulimia.

    摘要翻译: 本发明提供一种用于治疗贪食症的药物组合物,其中胆碱酯酶抑制剂与选自西布曲明,其药理学上可接受的盐,其活性代谢物,其前药及其溶剂合物中的至少一种组合。 药物组合物可用于治疗由食欲过盛引起的贪食症和抑郁症。

    Novel combination of drugs as antidepressant
    29.
    发明申请
    Novel combination of drugs as antidepressant 审中-公开
    药物的新型组合作为抗抑郁药

    公开(公告)号:US20070053976A1

    公开(公告)日:2007-03-08

    申请号:US11523803

    申请日:2006-09-20

    摘要: A novel antidepressant composition of a cholinesterase inhibitor in combination with a selective serotonin reuptake inhibitor, milnacipran or duloxetine is disclosed, which has a significantly high therapeutic effect as compared with conventional antidepressants. The therapeutic method using a cholinesterase inhibitor in combination with a selective serotonin reuptake inhibitor, milnacipran or duloxetine is beneficial for the treatment of depression, in particular, refractory depression.

    摘要翻译: 公开了一种胆碱酯酶抑制剂与选择性5-羟色胺再摄取抑制剂米那普仑或度洛西汀组合的新型抗抑郁药组合物,其与常规抗抑郁药相比具有显着高的治疗效果。 使用胆碱酯酶抑制剂与选择性5-羟色胺再摄取抑制剂,米那普仑或度洛西汀组合的治疗方法有利于治疗抑郁症,特别是难治性抑郁症。