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    Semiconductor device and method for manufacturing the semiconductor device
    22.
    发明授权
    Semiconductor device and method for manufacturing the semiconductor device 有权
    半导体装置及其制造方法

    公开(公告)号：US07566972B2

    公开(公告)日：2009-07-28

    申请号：US11426385

    申请日：2006-06-26

    申请人： Hiroshi Okamura

    发明人： Hiroshi Okamura

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

    摘要： A semiconductor device, comprises: a wiring formed on a first insulating film, a second insulating film formed on the first insulating film and on the wiring, a contact hole formed in the second insulating film and located on the wiring, a coating that covers a sidewall of the contact hole and is formed by sputtering the wiring at the bottom of the contact hole, a barrier film formed on the coating and at the bottom of the contact hole, and an electrical conductor deposited in the contact hole.

    摘要翻译： 一种半导体器件，包括：形成在第一绝缘膜上的布线，形成在第一绝缘膜上和布线上的第二绝缘膜，形成在第二绝缘膜中并位于布线上的接触孔，覆盖 并且通过溅射在接触孔的底部的布线，形成在涂层上的接触孔的底部的阻挡膜和沉积在接触孔中的电导体而形成。

    Support for fixing nucleotide and process for producing the same
    27.
    发明申请
    Support for fixing nucleotide and process for producing the same 审中-公开
    支持固定核苷酸及其制备方法

    公开(公告)号：US20060024741A1

    公开(公告)日：2006-02-02

    申请号：US11239418

    申请日：2005-09-30

    申请人： Michifumi Tanga ,  Hiroshi Okamura ,  Kenichi Takagi ,  Kojiro Takahashi

    发明人： Michifumi Tanga ,  Hiroshi Okamura ,  Kenichi Takagi ,  Kojiro Takahashi

    IPC分类号： C40B40/08 ,  C40B50/18

    CPC分类号： C07H21/00 ,  C07B2200/11 ,  C12N15/1006 ,  C12Q1/6837 ,  C12Q2521/501 ,  C12Q2521/301

    摘要： A support for fixing a nucleotide that contributes to the efficient clarification of DNA without damaging the terminal parts of the DNA and, therefore, is useful in the fields of biology, biochemistry and the like. This support for fixing a nucleotide is a chemically modified substrate on which oligonucleotide are immobilized characterized in that the oligonucleotide have a restriction enzyme cleavage site. This support is produced by chemically modifying the substrate, immobilizing a single-stranded oligonucleotide thereon, then hybridizing the single-stranded oligonucleotide with another single-stranded oligonucleotide having a base sequence complementary thereto, and ligating an oligonucleotide having a restriction enzyme site at the end thereof.

    摘要翻译： 用于固定有助于DNA的有效澄清而不损害DNA的末端部分的核苷酸的支持物，因此可用于生物学，生物化学等领域。 用于固定核苷酸的这种支持是其上固定有寡核苷酸的化学修饰底物，其特征在于寡核苷酸具有限制酶切割位点。 通过化学修饰底物，将单链寡核苷酸固定在其上，然后将单链寡核苷酸与其碱基序列互补的另一单链寡核苷酸杂交，并在末端连接具有限制酶位点的寡核苷酸， 其中。

    Method for manufacturing multilayer interconnects by forming a trench with an underlying through-hole in a low dielectric constant insulator layer
    28.
    发明授权
    Method for manufacturing multilayer interconnects by forming a trench with an underlying through-hole in a low dielectric constant insulator layer 失效
    通过在低介电常数绝缘体层中形成具有下面的通孔的沟槽来制造多层互连的方法

    公开(公告)号：US06376367B1

    公开(公告)日：2002-04-23

    申请号：US09522047

    申请日：2000-03-09

    申请人： Hiroshi Okamura

    发明人： Hiroshi Okamura

    IPC分类号： H01L214763

    CPC分类号： H01L21/76811 ,  H01L21/76813

    摘要： A semiconductor device having good electrical properties, and a method of manufacturing this semiconductor device by forming an insulation layer on a first wiring layer and then, in this insulation layer, simultaneously forming a second wiring layer and a contact layer for connecting the first wiring layer and the second wiring layer. A first mask having an opening over a wiring trench in which the second wiring layer will be formed is formed on the insulation layer. A second mask having an opening for a through-hole where the contact layer is to be formed is then formed over the insulation layer and first mask. The insulation layer is then etched using the second mask as a mask. Then the insulation layer is again etched using the first mask as a mask to form wiring trench and through-hole. The wiring trench and through-hole are then filled with a conductive material to form the second wiring layer and contact layer.

    摘要翻译： 具有良好电性能的半导体器件以及通过在第一布线层上形成绝缘层然后在该绝缘层中同时形成第二布线层和接触层来制造该半导体器件的方法，所述接触层用于将第一布线层 和第二布线层。 在绝缘层上形成有在其上将形成第二布线层的布线沟槽上的开口的第一掩模。 然后在绝缘层和第一掩模上形成具有用于形成接触层的通孔的开口的第二掩模。 然后使用第二掩模作为掩模来蚀刻绝缘层。 然后使用第一掩模作为掩模再次蚀刻绝缘层，以形成布线沟槽和通孔。 然后用导电材料填充布线沟槽和通孔，以形成第二布线层和接触层。

    Low-noise magnetic read/write head
    29.
    发明授权
    Low-noise magnetic read/write head 失效
    低噪声磁读/写头

    公开(公告)号：US4939608A

    公开(公告)日：1990-07-03

    申请号：US289401

    申请日：1988-12-21

    申请人： Hiroshi Okamura ,  Susumu Kimura ,  Masahiro Kusunoki

    发明人： Hiroshi Okamura ,  Susumu Kimura ,  Masahiro Kusunoki

    IPC分类号： G11B5/265

    CPC分类号： G11B5/2655 ,  G11B5/2654

    摘要： Disclosed is a magnetic head apparatus, which comprises a pair of magnetic cores defining a magnetic gap for recording and reproducing information, and grooves in the lateral faces of the magnetic cores, extending at right angles to those faces of the cores which are opposed to a magnetic recording medium or which define the magnetic cores. The grooves determine the width of the magnetic gap. That face of at least one of the magnetic cores which is opposed to the recording medium, is recessed from the remaining portion of the core, so as to cover a width equivalent to the length of the grooves, at the maximum. In the magnetic head of the invention, moreover, a nonmagnetic portion is formed at least on an erase gap, so that the degree of magnetic coupling between the erase gap and the recording medium is lower than that between a read/write gap and the medium. Thus, magnetic induction, which is produced in the erase core when data is read from the medium, is reduced.

    摘要翻译： 公开了一种磁头装置，其包括限定用于记录和再现信息的磁隙的一对磁芯和在磁芯的侧面中的与所述芯的相对的那些面成直角延伸的凹槽 磁记录介质或磁芯定义。 凹槽确定磁隙的宽度。 与记录介质相对的至少一个磁芯的表面从芯的剩余部分凹陷，以最大程度地覆盖与槽的长度相当的宽度。 此外，在本发明的磁头中，至少在擦除间隙上形成非磁性部分，使得擦除间隙和记录介质之间的磁耦合程度低于读/写间隙和介质之间的磁耦合程度 。 因此，当从介质读取数据时，在擦除核心中产生的磁感应减小。