公开(公告)号：US07045421B2

公开(公告)日：2006-05-16

申请号：US10824706

申请日：2004-04-15

申请人： Thomas Rueckes ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

发明人： Thomas Rueckes ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

IPC分类号： H01L21/00

CPC分类号： G11C13/025 ,  B82Y10/00 ,  G11C23/00 ,  H01L27/28 ,  H01L51/0048 ,  H01L51/0052

摘要： A method is used to make a bit selectable device having nanotube memory elements. A structure having at least two transistors is provided, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. A trench is formed between one of the source and drain of a first transistor and one of the source and drain of a second transistor. An electrical communication path is formed in the trench between one of the source and drain of a first transistor and one of the source and drain of a second transistor. A defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in the trench. A pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a first transistor and one of the source and drain of a second transistor.

摘要翻译： 一种方法用于制造具有纳米管存储元件的位选择器件。 提供了具有至少两个晶体管的结构，每个具有漏极和源极之间具有限定的沟道区域，每个晶体管还包括位于所述沟道上的栅极。 在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极之一之间形成沟槽。 在第一晶体管的源极和漏极之一以及第二晶体管的源极和漏极中的一个之间的沟槽中形成电连通路径。 在结构的至少一个水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。 在沟槽中设置电极。 纳米管织物的图案被悬浮，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的位置上，并且被定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与排水管之一电连通 第一晶体管的源极和第二晶体管的源极和漏极之一。

公开(公告)号：US06995046B2

公开(公告)日：2006-02-07

申请号：US10824678

申请日：2004-04-15

申请人： Thomas Rueckes ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

发明人： Thomas Rueckes ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

IPC分类号： H01L21/335

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  Y10S977/943

摘要： A method of making byte erasable devices having elements made with nanotubes. Under one aspect of the invention, a device is made having nanotube memory elements. A structure is provided having a plurality of transistors, each with a drain and a source with a defined channel region therebetween, each transistor further including a gate over said channel. For a predefined set of transistors, a corresponding trench is formed between gates of adjacent transistors. For each trench, a defined pattern of nanotube fabric is provided over at least a horizontal portion of the structure and extending into the trench. An electrode is provided in each trench. Each defined pattern of nanotube fabric is suspended so that at least a portion is vertically suspended in spaced relation to the vertical walls of the trench and positioned so that the vertically suspended defined pattern of nanotube fabric is electromechanically deflectable into electrical communication with one of the drain and source of a transistor. An electrical communication path is provided electrically connecting each electrode so that all electrodes may electro-statically attract a corresponding defined pattern of nanotube fabric away from a transistor and toward the electrode.

摘要翻译： 一种制造具有由纳米管制成的元件的字节可擦除器件的方法。 在本发明的一个方面，制造具有纳米管存储元件的装置。 提供了具有多个晶体管的结构，每个具有漏极和源极之间的沟道区域，每个晶体管还包括位于所述沟道上的栅极。 对于预定义的一组晶体管，在相邻晶体管的栅极之间形成相应的沟槽。 对于每个沟槽，在结构的至少水平部分上提供限定的纳米管织物图案并且延伸到沟槽中。 在每个沟槽中设置电极。 每个限定的纳米管织物图案被悬挂，使得至少一部分垂直悬挂在与沟槽的垂直壁隔开的关系中，并且定位成使得垂直悬挂的限定图案的纳米管织物可机电偏转成与漏斗之一电连通 和晶体管的源极。 电气连接路径被电连接每个电极，使得所有电极可以静电吸引相应的限定图案的纳米管织物远离晶体管并朝向电极。

公开(公告)号：US08013363B2

公开(公告)日：2011-09-06

申请号：US11835759

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/10

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a nonvolatile nanotube diode includes: a substrate; a semiconductor element disposed over the substrate, the semiconductor element having an anode and a cathode and capable of forming an electrically conductive pathway between the anode and the cathode; a nanotube switching element disposed over the semiconductor element, the nanotube switching element including a conductive contact and a nanotube fabric element capable of a plurality of resistance states; and a conductive terminal disposed in spaced relation to the conductive contact, wherein the nanotube fabric element is interposed between and in electrical communication with the conductive contact and the conductive contact is in electrical communication with the cathode, and wherein in response to electrical stimuli applied to the anode and the conductive terminal, the nonvolatile nanotube diode is capable of forming an electrically conductive pathway between the anode and the conductive terminal.

摘要翻译： 在一个方面，非易失性纳米管二极管包括：基板; 设置在所述衬底上的半导体元件，所述半导体元件具有阳极和阴极，并且能够在所述阳极和所述阴极之间形成导电通路; 设置在所述半导体元件上的纳米管开关元件，所述纳米管开关元件包括导电接触件和能够具有多个电阻状态的纳米管织物元件; 以及导电端子，其以导电接触件的间隔设置，其中所述纳米管织物元件置于所述导电接触件之间并与所述导电接触件电连通，并且所述导电接触件与所述阴极电连通，并且其中响应于施加到 阳极和导电端子，非易失性纳米管二极管能够在阳极和导电端子之间形成导电通路。

公开(公告)号：US07782650B2

公开(公告)日：2010-08-24

申请号：US11835845

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： G11C11/00

CPC分类号： H01L27/1021 ,  G11C2213/19 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

摘要： Under one aspect, a memory array includes word lines; bit lines; memory cells; and a memory operation circuit. Each memory cell responds to electrical stimulus on a word line and on a bit line and includes: a two-terminal non-volatile nanotube switching device having first and second terminals, a semiconductor diode element, and a nanotube fabric article capable of multiple resistance states. The semiconductor diode and nanotube article are between and in electrical communication with the first and second terminals, which are coupled to the word line bit line respectively. The operation circuit selects cells by activating bit and/or word lines, detects a resistance state of the nanotube fabric article of a selected memory cell, and adjusts electrical stimulus applied to the cell to controllably induce a selected resistance state in the nanotube fabric article. The selected resistance state corresponds to an informational state of the memory cell.

摘要翻译： 在一个方面，存储器阵列包括字线; 位线 记忆细胞; 和存储器操作电路。 每个存储器单元响应于字线和位线上的电刺激，并且包括：具有第一和第二端子的二端非易失性纳米管开关器件，半导体二极管元件和能够具有多个电阻状态的纳米管织物制品 。 半导体二极管和纳米管制品分别与第一和第二端子电连接，并且与第一和第二端子电连接，它们分别耦合到字线位线。 操作电路通过激活位和/或字线来选择单元，检测所选择的存储单元的纳米管织物的电阻状态，并调整施加到单元的电刺激以可控制地引起纳米管织物制品中选定的电阻状态。 选择的电阻状态对应于存储单元的信息状态。

公开(公告)号：US09911743B2

公开(公告)日：2018-03-06

申请号：US11835852

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L27/102 ,  B82Y10/00 ,  G11C13/02 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a method of making a nanotube switch includes: providing a substrate having a first conductive terminal; depositing a multilayer nanotube fabric over the first conductive terminal; and depositing a second conductive terminal over the multilayer nanotube fabric, the nanotube fabric having a thickness, density, and composition selected to prevent direct physical and electrical contact between the first and second conductive terminals. In some embodiments, the first and second conductive terminals and the multilayer nanotube fabric are lithographically patterned so as to each have substantially the same lateral dimensions, e.g., to each have a substantially circular or rectangular lateral shape. In some embodiments, the multilayer nanotube fabric has a thickness from 10 nm to 200 nm, e.g., 10 nm to 50 nm. The structure may include an addressable diode provided under the first conductive terminal or deposited over the second terminal.

公开(公告)号：US08217490B2

公开(公告)日：2012-07-10

申请号：US11835856

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： G11C11/56 ,  G11C5/00 ,  H01L29/00

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203 ,  Y10S977/943

摘要： Under one aspect, a non-volatile nanotube switch includes a first terminal; a nanotube block including a multilayer nanotube fabric, at least a portion of which is positioned over and in contact with at least a portion of the first terminal; a second terminal, at least a portion of which is positioned over and in contact with at least a portion of the nanotube block, wherein the nanotube block is constructed and arranged to prevent direct physical and electrical contact between the first and second terminals; and control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube block can switch between a plurality of electronic states in response to a plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube block provides an electrical pathway of different resistance between the first and second terminals.

摘要翻译： 在一个方面，非挥发性纳米管开关包括第一端子; 纳米管块，其包括多层纳米管织物，其至少一部分位于所述第一端子的至少一部分上方并与其接触; 第二端子，其至少一部分定位在所述纳米管块的至少一部分上方并与所述纳米管块的至少一部分接触，其中所述纳米管块被构造和布置成防止所述第一和第二端子之间的直接物理和电接触; 以及能够向第一和第二终端施加电刺激的控制电路。 响应于由控制电路施加到第一和第二端子的多个电刺激，纳米管块可以在多个电子状态之间切换。 对于每个不同的电子状态，纳米管块提供在第一和第二端子之间具有不同电阻的电路径。

公开(公告)号：US08513768B2

公开(公告)日：2013-08-20

申请号：US11835651

申请日：2007-08-08

申请人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

发明人： Claude L. Bertin ,  Thomas Rueckes ,  X. M. Henry Huang ,  Ramesh Sivarajan ,  Eliodor G. Ghenciu ,  Steven L. Konsek ,  Mitchell Meinhold ,  Jonathan W. Ward ,  Darren K. Brock

IPC分类号： H01L23/52

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  H01L21/8221 ,  H01L23/5256 ,  H01L27/0688 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

摘要翻译： 在一个方面，非挥发性纳米管二极管器件包括第一和第二端子; 包括阴极和阳极的半导体元件，并且能够响应于施加到第一导电端子的电刺激而在阴极和阳极之间形成导电路径; 以及纳米管开关元件，其包括与所述半导体元件电连通的纳米管织物制品，所述纳米管织物制品设置在所述半导体元件和所述第二端子之间，并且能够形成所述第一和第二端子之间的电刺激， 多个逻辑状态。

公开(公告)号：US08631562B2

公开(公告)日：2014-01-21

申请号：US12953076

申请日：2010-11-23

申请人： Claude L. Bertin ,  Brent M. Segal ,  Thomas Rueckes ,  Jonathan W. Ward

发明人： Claude L. Bertin ,  Brent M. Segal ,  Thomas Rueckes ,  Jonathan W. Ward

IPC分类号： H01H11/00 ,  H01H65/00

CPC分类号： H01L23/62 ,  B82Y10/00 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/0251 ,  H01L51/0048 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19103 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/3011 ,  H05K1/0259 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49124 ,  Y10T29/49204

摘要： An electrostatic discharge (ESD) protection circuit for protecting a protected circuit is coupled to an input pad. The ESD circuit includes a nanotube switch electrically having a control. The switch is coupled to the protected circuit and to a discharge path. The nanotube switch is controllable, in response to electrical stimulation of the control, between a de-activated state and an activated state. The activated state creates a current path so that a signal on the input pad flows to the discharge path to cause the signal at the input pad to remain within a predefined operable range for the protected circuit. The nanotube switch, the input pad, and the protected circuit may be on a semiconductor chip. The nanotube switch may be on a chip carrier. The deactivated and activated states may be volatile or non-volatile depending on the embodiment.

摘要翻译： 用于保护受保护电路的静电放电（ESD）保护电路耦合到输入焊盘。 ESD电路包括电子控制的纳米管开关。 开关耦合到保护电路和放电路径。 纳米管开关可以响应于控制的电刺激而被控制在去激活状态和激活状态之间。 激活状态产生电流路径，使得输入焊盘上的信号流到放电路径，使输入焊盘处的信号保持在受保护电路的预定可操作范围内。 纳米管开关，输入焊盘和受保护电路可以在半导体芯片上。 纳米管开关可以在芯片载体上。 根据实施例，去激活状态和激活状态可以是易失性的或非易失性的。

公开(公告)号：US20110062993A1

公开(公告)日：2011-03-17

申请号：US12951896

申请日：2010-11-22

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H03K19/20 ,  B82Y15/00 ,  B82Y30/00

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01H2001/0005 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/762 ,  Y10S977/932 ,  Y10S977/94 ,  Y10T29/49002

摘要： Nanotube-based switching elements and logic circuits are disclosed. Under one embodiment of the invention, a Boolean logic circuit includes at least one input terminal and an output terminal, and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. The Boolean function transformation includes a Boolean inversion within the function, such as a NOT or NOR function.

摘要翻译： 公开了基于纳米管的开关元件和逻辑电路。 在本发明的一个实施例中，布尔逻辑电路包括至少一个输入端子和输出端子，以及电气设置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。 纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。 布尔函数变换包括函数内的布尔反转，如NOT或NOR函数。

公开(公告)号：US07710157B2

公开(公告)日：2010-05-04

申请号：US12246013

申请日：2008-10-06

申请人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

发明人： Claude L. Bertin ,  Thomas Rueckes ,  Brent M. Segal

IPC分类号： H03K19/20

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/17 ,  H01H1/0094 ,  H01H1/027 ,  H01L27/28 ,  H01L29/0673 ,  H01L29/73 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0508 ,  Y10S977/708 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/938 ,  Y10S977/94 ,  Y10S977/943

摘要： Boolean logic circuits comprising nanotube-based switching elements with multiple controls. The Boolean logic circuits include input and output terminals and a network of nanotube switching elements electrically disposed between said at least one input terminal and said output terminal. Each switching element includes an input node, an output node, and a nanotube channel element having at least one electrically conductive nanotube. A control structure is disposed in relation to the nanotube channel element to controllably form and unform an electrically conductive channel along the nanotube channel element. At least one nanotube switching element non-volatilely retains an informational state and at least one nanotube switching elements volatilely retains an informational state. The network of nanotube switching elements effectuates a Boolean function transformation of Boolean signals on said at least one input terminal. Dual rail cascode logic circuits may also be constructed from the nanotube switching elements.

摘要翻译： 包括具有多个控制的基于纳米管的开关元件的布尔逻辑电路。 布尔逻辑电路包括输入和输出端子以及电气设置在所述至少一个输入端子和所述输出端子之间的纳米管开关元件网络。 每个开关元件包括输入节点，输出节点和具有至少一个导电纳米管的纳米管通道元件。 相对于纳米管通道元件设置控制结构，以可控地形成和取消沿着纳米管通道元件的导电通道。 至少一个纳米管开关元件不挥发地保持信息状态，并且至少一个纳米管开关元件挥发性地保持信息状态。 纳米管切换元件的网络在所述至少一个输入端上实现布尔信号的布尔函数变换。 双轨共源共栅逻辑电路也可以由纳米管开关元件构成。