利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

63 条记录 (耗时 0.047 秒)

    Process for production 2-deoxyaldose compound
    21.
    发明申请
    Process for production 2-deoxyaldose compound 审中-公开
    生产2-脱氧葡萄糖复合物的方法

    公开(公告)号：US20060069289A1

    公开(公告)日：2006-03-30

    申请号：US10537299

    申请日：2003-12-24

    申请人： Hideki Umetani ,  Hironori Komatsu ,  Tomoyuki Ando ,  Kazuhiko Togashi

    发明人： Hideki Umetani ,  Hironori Komatsu ,  Tomoyuki Ando ,  Kazuhiko Togashi

    IPC分类号： C07C45/51

    CPC分类号： C07D307/33 ,  C07H1/00 ,  C07H3/02

    摘要： A method for preparing 2-deoxyaldoses on an industrial scale in which the yield or the volumetric efficiency is excellent and the operation is simple, as compared to the conventionally known preparation method. In one aspect, a compound represented by a defined formula, such as 2-keto-3-deoxygluconic acid or the like, is reduced by the catalytic hydrogenation method using a metal, such as palladium or the like, or a compound such as 2-keto-3-deoxygluconic acid or the like is reduced by using a hydride reducing agent in a solvent of not more than 30 weight times the amount of the above compound, for synthesizing 2-keto-3-deoxyaldonic acid. The 2-keto-deoxyaldonic acid is decarboxylated to obtain 2-deoxyaldoses.

    摘要翻译： 与常规已知的制备方法相比，制备工业规模的2-脱氧葡萄糖的方法，其中产率或体积效率优异，操作简单。 在一个方面，通过使用金属如钯等的催化氢化方法或诸如2-酮-3-脱氧葡萄糖酸等化合物的方式，将由定义的式表示的化合物如2-酮-3-脱氧葡萄糖酸等还原， 通过在不超过上述化合物的30重量倍的溶剂的溶剂中使用氢化物​​还原剂来还原2-酮-3-脱氧果糖酸等，以合成2-酮-3-脱氧醛酸。 将2-酮 - 脱氧醛酸脱羧，得到2-脱氧葡萄糖。

    Metal compound, polymerizable composition containing the same, resin, method for producing the resin, and use of the resin
    23.
    发明授权
    Metal compound, polymerizable composition containing the same, resin, method for producing the resin, and use of the resin 有权
    金属化合物，含有它们的可聚合组合物，树脂，树脂的制备方法和树脂的使用

    公开(公告)号：US08697889B2

    公开(公告)日：2014-04-15

    申请号：US12993057

    申请日：2009-05-15

    申请人： Masakazu Murakami ,  Mamoru Takashina ,  Tomoyuki Ando ,  Seiichi Kobayashi

    发明人： Masakazu Murakami ,  Mamoru Takashina ,  Tomoyuki Ando ,  Seiichi Kobayashi

    IPC分类号： C07D331/04

    CPC分类号： C07D331/04 ,  C07C321/04 ,  C08G75/06 ,  C08L81/02 ,  G02B1/041 ,  C08L81/00

    摘要： Disclosed is a metal compound represented by the following formula (0): in the formula (0), A represents a thietane ring, or a monovalent group containing a thiol group; B represents a divalent group containing a heteroatom; R2 represents a divalent organic group; n represents the valence of M; p represents an integer of 1 ton; M represents a lanthanoid atom or a barium (Ba) atom when A is a thietane ring, and represents a lanthanoid atom when A is a monovalent group containing a thiol group; or more than Y represents a monovalent inorganic or organic group; when n−p is not less than 2, a plurality of Y's each independently represent a monovalent inorganic or organic group; and when n−p is not less than 2, the plurality of Y's may be bonded with each other to form a ring containing M.

    摘要翻译： 公开了由下式（0）表示的金属化合物：在式（0）中，A表示硫杂环丁烷或含有硫醇基的一价基团; B表示含有杂原子的二价基团; R2表示二价有机基团; n表示M的化合价; p表示1吨的整数， 当A为硫杂环丁烷时，M表示镧系元素原子或钡（Ba）原子，当A为含有硫醇基的一价基团时，表示镧系元素原子。 或大于Y表示一价无机或有机基团; 当n-p不小于2时，多个Y各自独立地表示一价无机或有机基团; 当n-p不小于2时，多个Y可以彼此键合形成含有M的环。

    THIETANE COMPOUND, POLYMERIZABLE COMPOSITION COMPRISING THE COMPOUND, AND USE OF THE COMPOSITION
    24.
    发明申请
    THIETANE COMPOUND, POLYMERIZABLE COMPOSITION COMPRISING THE COMPOUND, AND USE OF THE COMPOSITION 审中-公开
    该化合物，包含该化合物的可聚合组合物和组合物的使用

    公开(公告)号：US20100280208A1

    公开(公告)日：2010-11-04

    申请号：US12527851

    申请日：2008-02-19

    申请人： Masakazu Murakami ,  Tomoyuki Ando ,  Seiichi Kobayashi

    发明人： Masakazu Murakami ,  Tomoyuki Ando ,  Seiichi Kobayashi

    IPC分类号： C08G79/12 ,  C07D409/14

    CPC分类号： C08G75/06 ,  C08L81/02 ,  G02B1/041

    摘要： Disclosed is a thietane compound represented by the following general formula (1), (wherein, in the above general formula (1), M represents an element belonging to Group 14 of the Periodic Table in the long form; X1s each independently represent a sulfur atom or an oxygen atom; p represents an integer of equal to or more than 2 and equal to or less than (n−1); and n represents the number of valence of a metal atom M, provided that when n−p is 1, R2 represents an alkyl group having a straight chain or a branched chain of equal to or more than 1 and equal to or less than 3 carbon atoms which may have a substituent; and when n−p is 2 or more, a plurality of R2s each independently represent an alkyl group having a straight chain or a branched chain of equal to or more than 1 and equal to or less than 3 carbon atoms which may have a substituent or a plurality of R2s may be bonded to each other to form a ring containing M in which the alkyl chain forming the ring has equal to or more than 1 and equal to or less than 3 carbon atoms and a portion constituting the ring does not contain a sulfur atom).

    摘要翻译： 公开了由以下通式（1）表示的硫杂环丁烷化合物（其中，在上述通式（1）中，M表示长周期表中的第14族元素; X1各自独立地表示硫 原子或氧原子; p表示2以上且n-1以下的整数; n表示金属原子M的化合价数，条件是当n-p为1时， R2表示可以具有取代基的1个以上且3个以下碳原子的直链或支链的烷基，当n-p为2以上时，多个R 2 各自独立地表示具有等于或大于1且等于或小于3个碳原子的直链或支链的烷基，其可以具有取代基，或者多个R 2可以彼此键合以形成环 其中形成环的烷基链等于或大于t的M 1，等于或小于3个碳原子，构成环的部分不含硫原子）。

    METAL THIETANE COMPOUND, POLYMERIZABLE COMPOSITION CONTAINING THE COMPOUND, RESIN AND USE OF THE RESIN
    26.
    发明申请
    METAL THIETANE COMPOUND, POLYMERIZABLE COMPOSITION CONTAINING THE COMPOUND, RESIN AND USE OF THE RESIN 有权
    金属硫醇化合物，含有化合物，树脂和树脂使用的可聚合组合物

    公开(公告)号：US20100240862A1

    公开(公告)日：2010-09-23

    申请号：US12527845

    申请日：2008-02-19

    申请人： Masakazu Murakami ,  Tomoyuki Ando ,  Hironori Kuboi ,  Hidetoshi Hayashi ,  Osamu Kohgo ,  Seiichi Kobayashi

    发明人： Masakazu Murakami ,  Tomoyuki Ando ,  Hironori Kuboi ,  Hidetoshi Hayashi ,  Osamu Kohgo ,  Seiichi Kobayashi

    IPC分类号： C08G75/00 ,  C07D331/04

    CPC分类号： C08G75/06 ,  C08L81/02 ,  G02B1/041

    摘要： Disclosed is a metal thietane compound represented by the following general formula (120), (wherein, in the above general formula (120), M is a member selected from the group consisting of Bi, Sb, Ti, Zr and Ta; X1 and X2 are each independently a sulfur atom or an oxygen atom; R1 is a divalent organic group; the bond between M and T shown by a dotted line and a solid line represents a single or double bond; m is an integer of 0 or 1 or more; n is the number of valence of M; and p is an integer of equal to or more than 1 and equal to or less than n, provided that when r is 1, q is 0 and Y is a monovalent inorganic or organic group; when r is 1 and n-p-q is 2 or more, a plurality of Ys contained are each independently selected from monovalent inorganic or organic groups; when r is 1 and n-p-q is 2 or more, a plurality of Ys may be bonded to each other to form a ring containing M; when r is 2, n-p-q is 1 or 2 and Y is a divalent group; when r is 2 and n-p-q is 2, two Ys may form a ring together with two Ms; and when r is 2 and q is 2, a plurality of Ts contained are each independently selected from inorganic or organic groups).

    摘要翻译： 公开了由以下通式（120）表示的金属硫杂环丁烷化合物（其中，在上述通式（120）中，M为选自Bi，Sb，Ti，Zr和Ta的成员; X1和 X2各自独立地为硫原子或氧原子; R1为二价有机基团;虚线和实线所示的M和T之间的键表示单键或双键; m为0或1的整数，或 更多; n是M的化合价数; p是等于或大于1且等于或小于n的整数，条件是当r为1时，q为0，Y为单价无机或有机基团 当r为1且npq为2以上时，多个Y为独立地选自一价无机或有机基团;当r为1且npq为2以上时，可以将多个Y彼此键合， 形成含有M的环;当r为2时，npq为1或2，Y为二价基团;当r为2且npq为2时，两个Y可以形成环 两个女儿 当r为2且q为2时，多个Ts独立地选自无机或有机基团）。

    METHOD OF FORMING RESIST PATTERN
    28.
    发明申请
    METHOD OF FORMING RESIST PATTERN 有权
    形成电阻图案的方法

    公开(公告)号：US20100167217A1

    公开(公告)日：2010-07-01

    申请号：US12569040

    申请日：2009-09-29

    申请人： Tomoyuki Ando

    发明人： Tomoyuki Ando

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0048 ,  G03F7/40

    摘要： A method of forming a resist pattern that includes: applying a positive chemically amplified resist composition to a support to form a first resist film, exposing a region on a portion of the first resist film, performing a post exposure bake treatment and then performing developing to form a first resist pattern, and applying a negative chemically amplified resist composition to the support having the first resist pattern formed thereon, thereby forming a second resist film, exposing a region of the second resist film that includes the positions in which the first resist pattern has been formed, performing a post exposure bake treatment at a bake temperature that increases the solubility of the first resist film in an alkali developing solution and decreases the solubility of the second resist film in an alkali developing solution, and then performing developing to form a resist pattern.

    摘要翻译： 一种形成抗蚀剂图案的方法，包括：将正性化学放大抗蚀剂组合物施加到载体上以形成第一抗蚀剂膜，暴露第一抗蚀剂膜的一部分上的区域，进行曝光后烘烤处理，然后进行显影 形成第一抗蚀剂图案，并将负的化学放大抗蚀剂组合物施加到其上形成有第一抗蚀剂图案的支撑体上，从而形成第二抗蚀剂膜，暴露第二抗蚀剂膜的区域，该区域包括第一抗蚀剂图案 已经形成，在烘烤温度下进行后曝光烘烤处理，其使第一抗蚀剂膜在碱性显影溶液中的溶解度增加，并且降低第二抗蚀剂膜在碱性显影溶液中的溶解度，然后进行显影以形成 抗蚀图案