利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

304 条记录 (耗时 0.046 秒)

    Optical bioinstrumentation for living body
    21.
    发明授权
    Optical bioinstrumentation for living body 有权
    活体光生物仪器

    公开(公告)号：US07613502B2

    公开(公告)日：2009-11-03

    申请号：US11205184

    申请日：2005-08-17

    申请人： Yukari Yamamoto ,  Atsushi Maki ,  Masashi Kiguchi ,  Tsuyoshi Yamamoto

    发明人： Yukari Yamamoto ,  Atsushi Maki ,  Masashi Kiguchi ,  Tsuyoshi Yamamoto

    IPC分类号： A61B5/00

    CPC分类号： A61B5/14553 ,  A61B5/0042 ,  A61B5/064 ,  A61B5/6814 ,  A61B5/7425 ,  A61B5/743 ,  A61B34/20 ,  A61B2034/2051 ,  A61B2034/2055 ,  A61B2034/2063

    摘要： In a probe positioning technology, an optical bioinstrumentation includes a region selecting unit that is used to delineate a region of interest in an anatomical image of a subject, a computing unit that determines a recommended probe position according to the region of interest, a probe position sensor that detects a current probe position, a computing unit that calculates the distance between the recommended probe position and the current probe position, and an alarm device that generates an alarm sound or the like when the distance falls within a predetermined range. Moreover, the optical bioinstrumentation for living body further includes a memory unit in which the probe position is saved together with measurement data.

    摘要翻译： 在探针定位技术中，光学生物仪器包括区域选择单元，其用于描绘对象的解剖图像中的感兴趣区域，计算单元，其根据感兴趣的区域确定推荐的探针位置，探针位置 检测当前探头位置的传感器，计算推荐探测位置与当前探测位置之间的距离的计算单元，以及当距离在预定范围内时产生报警声等的报警装置。 此外，生物体的光学生物仪器还包括存储单元，其中探测位置与测量数据一起被保存。

    Semiconductor device including a plurality of cells
    23.
    发明申请
    Semiconductor device including a plurality of cells 有权
    包括多个单元的半导体器件

    公开(公告)号：US20090159963A1

    公开(公告)日：2009-06-25

    申请号：US12292351

    申请日：2008-11-18

    申请人： Hitoshi Yamaguchi ,  Tsuyoshi Yamamoto

    发明人： Hitoshi Yamaguchi ,  Tsuyoshi Yamamoto

    IPC分类号： H01L27/06

    CPC分类号： H01L29/7815 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7813 ,  H01L29/7826

    摘要： A semiconductor device includes an insulated gate transistor and a resistor. The insulated gate transistor includes a plurality of first cells for supplying electric current to a load and a second cell for detecting an electric current that flows in the first cells. A gate terminal of the plurality of first cells is coupled with a gate terminal of the second cell and a source terminal of the plurality of first cells is coupled with a source terminal of the second cell on a lower potential side. The resistor has a first terminal coupled with a drain terminal of the second cell and a second terminal coupled with a drain terminal of the first cells on a higher potential side. A gate voltage of the insulated gate transistor is feedback-controlled based on an electric potential of the resistor.

    摘要翻译： 半导体器件包括绝缘栅晶体管和电阻器。 绝缘栅晶体管包括用于向负载提供电流的多个第一单元和用于检测在第一单元中流动的电流的第二单元。 所述多个第一单元的栅极端子与所述第二单元的栅极端子耦合，并且所述多个第一单元的源极端子与所述第二单元的源极端子耦合在较低电位侧。 电阻器具有与第二单元的漏极端子耦合的第一端子和与较高电位侧的第一单元的漏极端子耦合的第二端子。 绝缘栅极晶体管的栅极电压基于电阻器的电位进行反馈控制。

    OPTICAL SEMICONDUCTOR DEVICE
    25.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE 有权
    光学半导体器件

    公开(公告)号：US20090052487A1

    公开(公告)日：2009-02-26

    申请号：US12234161

    申请日：2008-09-19

    申请人： Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Mitsuru Ekawa ,  Kan Takada ,  Shigekazu Okumura

    发明人： Tsuyoshi Yamamoto ,  Manabu Matsuda ,  Mitsuru Ekawa ,  Kan Takada ,  Shigekazu Okumura

    IPC分类号： H01S5/323

    CPC分类号： H01S5/227

    摘要： An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

    摘要翻译： 一种光学半导体器件，包括有源层，形成在有源层上方并由含有Al的半导体材料制成的第一半导体层，形成在第一半导体层上方的第二半导体层，并由不含任何一种 Al和P，并且其带隙大于有源层的带隙;以及第三半导体层，其形成在第二半导体层上方并由不含Al但包含P的半导体材料制成。第二半导体层形成为 第一半导体层和第三半导体层彼此不接触。

    Micro-electro-mechanical systems device
    28.
    发明申请
    Micro-electro-mechanical systems device 审中-公开
    微机电系统装置

    公开(公告)号：US20080211044A1

    公开(公告)日：2008-09-04

    申请号：US12071513

    申请日：2008-02-21

    申请人： Tamotsu Akashi ,  Tsuyoshi Yamamoto

    发明人： Tamotsu Akashi ,  Tsuyoshi Yamamoto

    IPC分类号： H01L29/84

    CPC分类号： B81B3/0078 ,  B81B2201/042 ,  B81B2201/045 ,  B81B2203/0109 ,  G02B26/0833

    摘要： According to an aspect of an embodiment, a micro-electro-mechanical systems (MEMS) device comprises a substrate, a MEMS and a movable absorber.The MEMS has a movable part having a resonance frequency on the substrate. The movable absorber absorbs a vibration in accordance with the resonance frequency so as to vibrate itself.

    摘要翻译： 根据实施例的一个方面，微电子机械系统（MEMS）装置包括衬底，MEMS和可移动吸收体。 MEMS具有在基板上具有共振频率的可移动部分。 可移动吸收体根据谐振频率吸收振动，以便自身振动。

    Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method
    29.
    发明申请
    Optical semiconductor device having active layer of p-type quantum dot structure and its manufacture method 有权
    具有p型量子点结构的有源层的光半导体器件及其制造方法

    公开(公告)号：US20080157059A1

    公开(公告)日：2008-07-03

    申请号：US11976120

    申请日：2007-10-22

    申请人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

    发明人： Nobuaki Hatori ,  Tsuyoshi Yamamoto ,  Hisao Sudo ,  Yasuhiko Arakawa

    IPC分类号： H01S5/34 ,  H01L33/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/06226 ,  H01S5/0655 ,  H01S5/3086 ,  H01S5/3412 ,  H01S5/34306 ,  H01S5/34353 ,  H01S2301/18

    摘要： An active layer having a p-type quantum dot structure is disposed over a lower cladding layer made of semiconductor material of a first conductivity type. An upper cladding layer is disposed over the active layer. The upper cladding layer is made of semiconductor material, and includes a ridge portion and a cover portion. The ridge portion extends in one direction, and the cover portion covers the surface on both sides of the ridge portion. A capacitance reducing region is disposed on both sides of the ridge portion and reaching at least the lower surface of the cover portion. The capacitance reducing region has the first conductivity type or a higher resistivity than that of the ridge portion, and the ridge portion has a second conductivity type. If the lower cladding layer is an n-type, the capacitance reducing region reaches at least the upper surface of the lower cladding layer.

    摘要翻译： 具有p型量子点结构的有源层设置在由第一导电类型的半导体材料制成的下包层上。 上覆层设置在有源层上。 上包层由半导体材料制成，并且包括脊部和盖部。 脊部沿一个方向延伸，并且盖部分覆盖脊部两侧的表面。 电容减小区域设置在脊部的两侧并且至少到达盖部的下表面。 电容减小区域具有比脊部分的第一导电类型或更高的电阻率，并且脊部分具有第二导电类型。 如果下包层为n型，则电容减小区域至少到达下包层的上表面。

    Semiconductor laser device and manufacturing method of the same
    30.
    发明申请
    Semiconductor laser device and manufacturing method of the same 有权
    半导体激光器件及其制造方法相同

    公开(公告)号：US20080080573A1

    公开(公告)日：2008-04-03

    申请号：US11902622

    申请日：2007-09-24

    申请人： Kenichi Kawaguchi ,  Tsuyoshi Yamamoto

    发明人： Kenichi Kawaguchi ,  Tsuyoshi Yamamoto

    IPC分类号： H01S5/06 ,  H01L33/00 ,  H01S5/026

    CPC分类号： H01S5/18341 ,  B82Y20/00 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18369 ,  H01S5/3027 ,  H01S5/3036 ,  H01S5/3412 ,  H01S2304/04

    摘要： Disclosed is a semiconductor laser device capable of realizing efficient current injection and a method of manufacturing the same. The method includes the steps of: forming a DBR mirror over a Si substrate; forming an n-type conductive layer over the DBR mirror; forming a luminescent layer over a part of the n-type conductive layer; forming an insulating layer over a side surface of the luminescent layer over the n-type conductive layer; forming a p-type conductive layer over the insulating layer and the luminescent layer; forming another DBR mirror over the p-type conductive layer so as to be located immediately above the luminescent layer; forming an electrode electrically connected to the n-type conductive layer; and forming another electrode over the p-type conductive layer.

    摘要翻译： 公开了能够实现高效电流注入的半导体激光装置及其制造方法。 该方法包括以下步骤：在Si衬底上形成DBR镜; 在DBR镜上形成n型导电层; 在n型导电层的一部分上形成发光层; 在所述n型导电层的上方在所述发光层的侧面上形成绝缘层; 在绝缘层和发光层上形成p型导体层; 在p型导电层上形成另一个DBR镜，以便位于发光层的正上方; 形成与n型导电层电连接的电极; 并在p型导电层上形成另一电极。