公开(公告)号：US07547966B2

公开(公告)日：2009-06-16

申请号：US11873454

申请日：2007-10-17

申请人： Sunao Funakoshi ,  Katsumi Ishikawa ,  Tasao Soga

发明人： Sunao Funakoshi ,  Katsumi Ishikawa ,  Tasao Soga

IPC分类号： H01L23/34 ,  H01L23/10 ,  H01L23/367 ,  H01L23/427

CPC分类号： H01L23/473 ,  H01L23/051 ,  H01L23/427 ,  H01L23/4334 ,  H01L24/33 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module with its thermal resistance and overall size reduced. Insulating substrates with electrode metal layers disposed thereon are joined to both the surfaces of a power semiconductor chip by using, for example, soldering. Metal layers are disposed also on the reverse surfaces of the insulating substrates and the metal layers are joined to the heat spreaders by using brazing. Heat radiating fins are provided on the heat radiating surface of at least one of the heat spreaders. The heat radiating side of each of the heat spreaders is covered by a casing to form a refrigerant chamber through which refrigerant flows to remove heat transmitted from the semiconductor chip to the heat spreader.

摘要翻译： 功率半导体模块的热阻和总体尺寸减小。 通过使用例如焊接，将配置有电极金属层的绝缘基板接合到功率半导体芯片的两个表面。 金属层也设置在绝缘基板的背面，金属层通过钎焊与散热器接合。 散热翅片设置在至少一个散热器的散热表面上。 每个散热器的散热侧被壳体覆盖以形成制冷剂室，制冷剂流过该制冷剂室，以将从半导体芯片传递的热量除去到散热器。

公开(公告)号：US07295412B2

公开(公告)日：2007-11-13

申请号：US10773283

申请日：2004-02-09

申请人： Masataka Sasaki ,  Katsumi Ishikawa ,  Ryuichi Saito ,  Koichi Suda ,  Katsuaki Takahashi

发明人： Masataka Sasaki ,  Katsumi Ishikawa ,  Ryuichi Saito ,  Koichi Suda ,  Katsuaki Takahashi

IPC分类号： H02H3/20 ,  H02H3/08 ,  H02H9/02

CPC分类号： B60W20/00 ,  B60K6/485 ,  B60L3/003 ,  B60W10/08 ,  H02H7/20 ,  H02M1/32 ,  H03K17/0828 ,  H03K17/168 ,  Y02T10/6226

摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.

摘要翻译： 功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。 此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。 第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。 当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。

公开(公告)号：US20070200602A1

公开(公告)日：2007-08-30

申请号：US11624730

申请日：2007-01-19

申请人： Katsumi Ishikawa ,  Hideki Miyazaki ,  Masahiro Nagasu ,  Yasuhiko Kono

发明人： Katsumi Ishikawa ,  Hideki Miyazaki ,  Masahiro Nagasu ,  Yasuhiko Kono

IPC分类号： H03B1/00

CPC分类号： H03K17/0828 ,  H03K17/0406 ,  H03K17/567

摘要： A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.

摘要翻译： 电压驱动型功率半导体开关元件的栅极驱动电路具有（a）电压驱动型功率半导体开关元件，（b）驱动电路，用于向开关元件的栅电极提供驱动信号，（c） 开关器件的发射极控制端子或源极控制端子与半导体模块的发射极主端子或源极主体之间的电感。 检测到电感上产生的电压。 栅极驱动电压或栅极驱动电阻根据检测值而变化。

公开(公告)号：US20070151632A1

公开(公告)日：2007-07-05

申请号：US11641765

申请日：2006-12-20

申请人： Matahiro Komuro ,  Yuichi Satsu ,  Takao Imagawa ,  Katsumi Ishikawa ,  Takeyuki Itabashi ,  Yuzo Kozono

发明人： Matahiro Komuro ,  Yuichi Satsu ,  Takao Imagawa ,  Katsumi Ishikawa ,  Takeyuki Itabashi ,  Yuzo Kozono

IPC分类号： H01F1/20

CPC分类号： H01F1/0577 ,  H01F1/0572 ,  H01F1/0579 ,  H01F41/0293 ,  H02K1/02 ,  H02K1/246 ,  H02K1/276 ,  H02K1/2766 ,  H02K1/278

摘要： A lamellar high resistance layer having resistivity ten times or higher than that of a mother phase containing iron or cobalt is formed and an oxygen content is controlled to 10 to 10000 ppm so that the reliability and residual magnetic flux density are increased.

摘要翻译： 形成具有比含有铁或钴的母相的电阻率高十倍以上的层状高电阻层，将氧含量控制在10〜10000ppm，使得可靠性和剩余磁通密度增加。

公开(公告)号：US4212197A

公开(公告)日：1980-07-15

申请号：US1403

申请日：1979-01-08

申请人： Masayasu Kawai ,  Katsumi Ishikawa

发明人： Masayasu Kawai ,  Katsumi Ishikawa

IPC分类号： G01D5/16 ,  G01L1/22

CPC分类号： G01L1/2243

摘要： A strain gage load converter having a parallelogram shaped beam having strain gages on the top and bottom surfaces of the beam. These gage mounting surfaces are made reentrant concave shaped in order to eliminate occurrence of measurement loss due to lateral shift of load point against the main axis of the beam.

摘要翻译： 一种应变计负载转换器，其具有在梁的顶表面和底表面上的应变计的平行四边形形状的梁。 这些量规安装表面被制成凹入形状，以消除由于负载点相对于梁的主轴的横向偏移而导致的测量损失的发生。

公开(公告)号：US08952642B2

公开(公告)日：2015-02-10

申请号：US13806822

申请日：2011-06-23

申请人： Hideki Ayano ,  Katsumi Ishikawa ,  Kazutoshi Ogawa ,  Tsutomu Kominami ,  Mami Kunihiro

发明人： Hideki Ayano ,  Katsumi Ishikawa ,  Kazutoshi Ogawa ,  Tsutomu Kominami ,  Mami Kunihiro

IPC分类号： H02P29/00 ,  H02M1/32 ,  H02P21/06 ,  H02M7/5387

CPC分类号： H02P29/0088 ,  H02M1/32 ,  H02M7/5387 ,  H02M2001/327 ,  H02P21/06 ,  H02P29/68

摘要： Temperature rise in semiconductor switching element that is part of a power conversion device is estimated to assess the degradation and remaining lifetime of the switching element. This is accomplished with a heat generation amount calculation unit in a calculation processor, where current command values Id* and Iq* and voltage command values vu*, vv* and vw* are used to calculate a chip loss. Current values iu*, iv* and iw* of all output phases are estimated from the current command values. The ON/OFF loss of the chip is represented by a function of an estimated value for a current flowing in each output phase, and the loss can be derived by integration with a PWM carrier frequency f. With respect to a conduction loss, a conduction time is integrated with the estimated current value and a saturation voltage, which is a function of the estimated current value.

摘要翻译： 作为功​​率转换装置的一部分的半导体开关元件的温度上升被估计为评估开关元件的劣化和剩余寿命。 这是通过计算处理器中的发热量计算单元实现的，其中使用电流指令值Id *和Iq *以及电压指令值vu *，vv *和vw *来计算芯片损耗。 从当前命令值估计所有输出相位的当前值iu *，iv *和iw *。 芯片的ON / OFF损耗由在每个输出相中流动的电流的估计值的函数表示，并且可以通过与PWM载波频率f的积分来导出损耗。 对于导通损耗，导通时间与估计电流值和作为估计电流值的函数的饱和电压进行积分。

公开(公告)号：US20120007533A1

公开(公告)日：2012-01-12

申请号：US13176776

申请日：2011-07-06

申请人： Kazutoshi OGAWA ,  Katsumi Ishikawa

发明人： Kazutoshi OGAWA ,  Katsumi Ishikawa

IPC分类号： H02P27/04 ,  H02M11/00

CPC分类号： H02M7/5387 ,  H02M7/003 ,  Y02B70/1441

摘要： In order to reduce the average power of the ringing noise, the present invention provides a power converter comprising: an arm circuit including a high-voltage side switching device to which a first diode is connected in parallel and a low-voltage side switching device to which a second diode is connected in parallel; and a main power supply connected to a series circuit of the high-voltage side switching device and the low-voltage side switching device, wherein a connecting point between the high-voltage side switching device and the low-voltage side switching device is connected to a load, and a resonant frequency calculated from inductances of wirings of a closed circuit including the first diode, the second diode, and the main power supply and a capacitance across the first diode is different form that calculated from the inductances of the wirings and a capacitance across the second diode.

摘要翻译： 为了降低振铃噪声的平均功率，本发明提供了一种功率变换器，包括：臂电路，包括并联连接有第一二极管的高压侧开关装置和低压侧开关装置， 第二二极管并联连接; 以及连接到高压侧开关装置和低压侧开关装置的串联电路的主电源，其中高压侧开关装置和低压侧开关装置之间的连接点连接到 负载和由包括第一二极管，第二二极管和主电源的闭合电路的电感的电感计算出的谐振频率以及跨第一二极管的电容的不同形式，其从布线的电感和 电容跨越第二个二极管。

公开(公告)号：US07954334B2

公开(公告)日：2011-06-07

申请号：US10920246

申请日：2004-08-18

申请人： Masataka Sasaki ,  Hideki Miyazaki ,  Katsumi Ishikawa ,  Keiji Maekawa

发明人： Masataka Sasaki ,  Hideki Miyazaki ,  Katsumi Ishikawa ,  Keiji Maekawa

IPC分类号： F25D23/12

CPC分类号： B60L3/00 ,  B60L2200/26 ,  B60L2210/20 ,  B60L2240/525 ,  H02M7/48 ,  Y02T10/725

摘要： An inverter system having a semiconductor device, and a railway vehicle using this inverter, provide a more accurate determination of whether an abnormal heat generation from the inverter is associated with an error of the inverter system or is due to other causes, by use of a plurality of temperature detecting elements at a plurality of sites associated with the semiconductor device. An error detection section applies inputs from the temperature detecting elements, captures a trend of the differential value based on the plurality of temperature inputs using period sampling wherein an error associated with the semiconductor device, and not from some other condition such as outside environment temperature, is determined based on differences from, or a change in, the initial trend.

摘要翻译： 具有半导体装置的逆变器系统和使用该逆变器的铁路车辆能够更准确地确定逆变器系统的异常发热是否与逆变器系统的误差有关，或者是由于其他原因，通过使用 在与半导体器件相关联的多个位置处的多个温度检测元件。 误差检测部分应用来自温度检测元件的输入，使用周期采样捕获基于多个温度输入的差分值的趋势，其中与半导体器件相关联的误差，而不是来自诸如外部环境温度等某些其他条件， 是根据初始趋势的差异或变化来确定的。

公开(公告)号：US20100327837A1

公开(公告)日：2010-12-30

申请号：US12818229

申请日：2010-06-18

申请人： Dai TSUGAWA ,  Katsumi Ishikawa

发明人： Dai TSUGAWA ,  Katsumi Ishikawa

IPC分类号： G05F1/10

CPC分类号： H02M1/32 ,  H01L2224/48091 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/5387 ,  H01L2924/00014 ,  H01L2924/00

摘要： The following problem associated with a semiconductor device of silicon or the like having low band gap is solved by temperature estimation using voltage drop in such a semiconductor device having low accuracy and this complicates a circuit for temperature detection suitable for practical use or a configuration for implementing a detection system. A power converter provided with an inverter circuit includes a semiconductor device whose band gap is larger than that of silicon and which has a range in which the temperature coefficient of voltage drop during conduction is positive. The power converter further includes a measurement condition setting circuit. This circuit adjusts the timing of the following measurement values used for temperature estimation at a device temperature estimation circuit to each other so that a measurement value of a voltage measurement circuit and a measurement value of a current measurement circuit become data obtained by measurement at the same time.

摘要翻译： 与具有低带隙的硅等的半导体器件相关联的以下问题通过使用这种具有低精度的这种半导体器件中的电压降的温度估计来解决，并且这使得适用于实际使用的温度检测电路或用于实现的配置复杂化 检测系统。 设置有逆变器电路的电力转换器包括其带隙大于硅的带隙的半导体器件，并且具有传导期间的电压降温度系数为正的范围。 功率转换器还包括测量条件设置电路。 该电路将用于设备温度估计电路的温度估计的以下测量值的定时相互调整，使得电压测量电路的测量值和电流测量电路的测量值成为通过测量获得的数据 时间。

公开(公告)号：US20100207450A1

公开(公告)日：2010-08-19

申请号：US12707180

申请日：2010-02-17

申请人： Kazutoshi OGAWA ,  Katsumi Ishikawa

发明人： Kazutoshi OGAWA ,  Katsumi Ishikawa

IPC分类号： H02J1/10

CPC分类号： H02M1/08 ,  Y10T307/50

摘要： The invention provides a switching circuit and a power converter having a built-in power source for a conduction control terminal even if they have a single-arm structure. In the switching circuit having a switching device and a conduction control terminal power source capacitor, a negative terminal of the capacitor is connected to a reference voltage terminal of a main power source and to the gate terminal selectively through a half-bridge circuit and a positive terminal of the capacitor is selectively connected to a positive terminal of the main power source and to a source terminal of the switching device through a half-bridge circuit. The capacitor is charged when the positive terminal is connected to the main power source and discharges when the negative terminal is connected to the gate terminal and the positive terminal is connected to the source terminal and applies voltage to the gate terminal of the switching device.

摘要翻译： 本发明提供了一种开关电路和功率转换器，其具有用于导电控制端子的内置电源，即使它们具有单臂结构。 在具有开关器件和导通控制端子电源电容器的开关电路中，电容器的负极端子通过半桥电路和正极连接到主电源的基准电压端子和栅极端子 电容器的端子通过半桥电路选择性地连接到主电源的正极端子和开关器件的源极端子。 当正极连接到主电源时，电容器被充电，当负极连接到栅极端子并且正极端子连接到源极端子并且向开关装置的栅极端子施加电压时，电容器被充电。