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1.发明申请Protection circuit for power management semiconductor devices and power converter having the protection circuit 有权具有保护电路的电源管理半导体器件和电力转换器保护电路公开(公告)号：US20080074819A1
公开(公告)日：2008-03-27
申请号：US11979874
申请日：2007-11-09
IPC分类号： H02H3/20
CPC分类号： B60W20/00 , B60K6/485 , B60L3/003 , B60W10/08 , H02H7/20 , H02M1/32 , H03K17/0828 , H03K17/168 , Y02T10/6226
摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.
摘要翻译： 功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。 此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。 第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。 当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。
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2.发明授权Protection circuit for power management semiconductor devices and power converter having the protection circuit 有权具有保护电路的电源管理半导体器件和电力转换器保护电路公开(公告)号：US07675727B2
公开(公告)日：2010-03-09
申请号：US11979874
申请日：2007-11-09
CPC分类号： B60W20/00 , B60K6/485 , B60L3/003 , B60W10/08 , H02H7/20 , H02M1/32 , H03K17/0828 , H03K17/168 , Y02T10/6226
摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.
摘要翻译： 功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。 此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。 第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。 当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。
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3.发明授权Protection circuit for power management semiconductor devices and power converter having the protection circuit 有权具有保护电路的电源管理半导体器件和电力转换器保护电路公开(公告)号：US07295412B2
公开(公告)日：2007-11-13
申请号：US10773283
申请日：2004-02-09
CPC分类号： B60W20/00 , B60K6/485 , B60L3/003 , B60W10/08 , H02H7/20 , H02M1/32 , H03K17/0828 , H03K17/168 , Y02T10/6226
摘要： A collector voltage of a power management semiconductor device is detected by a first comparator, and when the detected collector voltage exceeds a first reference voltage, the first comparator outputs a first detection signal. Furthermore, a gate voltage of the power management semiconductor device is detected by a second comparator, and when the detected gate voltage exceeds a second reference voltage, the second comparator outputs a second detection signal. The second reference voltage is a minimum gate voltage for feeding a rated power to the power management semiconductor device or over, and less than a line power voltage of a drive circuit of the power management semiconductor device. When both the first detection signal and second detection signal are being outputted, the gate voltage is reduced by a gate voltage reduction means so as to protect the power management semiconductor device from overcurrent and overvoltage.
摘要翻译： 功率管理半导体器件的集电极电压由第一比较器检测，并且当检测到的集电极电压超过第一参考电压时，第一比较器输出第一检测信号。 此外，由第二比较器检测功率管理半导体器件的栅极电压，并且当检测到的栅极电压超过第二参考电压时，第二比较器输出第二检测信号。 第二参考电压是用于向功率管理半导体器件提供额定功率或超过功率管理半导体器件的驱动电路的线电源电压的最小栅极电压。 当输出第一检测信号和第二检测信号两者时，通过栅极电压降低装置降低栅极电压，以保护功率管理半导体器件免于过电流和过电压。
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公开(公告)号：US06960980B2
公开(公告)日：2005-11-01
申请号：US10102558
申请日：2002-03-19
申请人： Kinya Nakatsu , Masataka Sasaki , Ryuichi Saito , Satoshi Ibori , Masato Takase
发明人： Kinya Nakatsu , Masataka Sasaki , Ryuichi Saito , Satoshi Ibori , Masato Takase
摘要： A power converter includes a shunt resistor constituted by a shunt resistance and a plurality of main electrodes made of a sheet-like resistive material. In the shunt resistor, plates lower in volume electric resistivity than the resistive material, higher in thermal conductivity than the resistive material and thicker in thickness than the resistive material are fixedly attached by solder, to the side surfaces of the main electrodes opposite to the side surfaces with which the main electrodes are fixedly attached to an insulating layer. At least one plate main electrode for electrically connecting with main circuit wiring is provided in each of the plates. At least one constricted portion is formed between each of the plate main electrodes and the shunt resistance. Plate detection electrodes for detecting a voltage between the opposite ends of the shunt resistance is provided on the plates near the shunt resistance portion.
摘要翻译： 功率转换器包括由分流电阻构成的分流电阻和由片状电阻材料制成的多个主电极。 在分流电阻器中，体积电阻率低于电阻材料的板材的导热系数比电阻材料高，电阻材料的厚度比电阻材料通过焊料固定在主电极的与侧面相反的侧面 主电极固定在绝缘层上的表面。 在每个板中设置有用于与主电路布线电连接的至少一个板主电极。 在每个板主电极和分流电阻之间形成至少一个收缩部分。 用于检测分流电阻的相对端之间的电压的板检测电极设置在分流电阻部分附近的板上。
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5.发明授权Vehicle power converted with shunt resistor having plate-shape resistive member 失效用具有板状电阻元件的分流电阻转换的车辆功率公开(公告)号：US06794854B2
公开(公告)日：2004-09-21
申请号：US10290549
申请日：2002-11-07
申请人： Kinya Nakatsu , Masataka Sasaki , Ryuichi Saito , Satoshi Ibori , Masato Takase
发明人： Kinya Nakatsu , Masataka Sasaki , Ryuichi Saito , Satoshi Ibori , Masato Takase
IPC分类号： H02H726
摘要： A power converter includes a shunt resistor constituted by a shunt resistance and a plurality of main electrodes made of a sheet-like resistive material. In the shunt resistor, plates lower in volume electric resistivity than the resistive material, higher in thermal conductivity than the resistive material and thicker in thickness than the resistive material are fixedly attached by solder, to the side surfaces of the main electrodes opposite to the side surfaces with which the main electrodes are fixedly attached to an insulating layer. At least one plate main electrode for electrically connecting with main circuit wiring is provided in each of the plates. At least one constricted portion is formed between each of the plate main electrodes and the shunt resistance. Plate detection electrodes for detecting a voltage between the opposite ends of the shunt resistance is provided on the plates near the shunt resistance portion.
摘要翻译： 功率转换器包括由分流电阻构成的分流电阻和由片状电阻材料制成的多个主电极。 在分流电阻器中，体积电阻率低于电阻材料的板材的导热系数比电阻材料高，电阻材料的厚度比电阻材料通过焊料固定在主电极的与侧面相反的侧面 主电极固定在绝缘层上的表面。 在每个板中设置有用于与主电路布线电连接的至少一个板主电极。 在每个板主电极和分流电阻之间形成至少一个收缩部分。 用于检测分流电阻的相对端之间的电压的板检测电极设置在分流电阻部分附近的板上。
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公开(公告)号：US06724313B2
公开(公告)日：2004-04-20
申请号：US10215326
申请日：2002-08-09
IPC分类号： G08B1702
CPC分类号： H02M7/00 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.
摘要翻译： 检测出可能导致逆变器故障的检测故障或故障的故障检测系统。 该系统具有安装在半导体模块上的温度传感器，用于监测升温速率。 如果通过半导体模块的焊接层的劣化或驱动电路故障而导致热阻增加，则判定为异常状态，结果，操作模式与升温速度之间的关系落在外侧 预定范围。
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公开(公告)号：US06759964B2
公开(公告)日：2004-07-06
申请号：US10098459
申请日：2002-03-18
IPC分类号： G08B1702
CPC分类号： H02M7/00 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.
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公开(公告)号：US07046155B2
公开(公告)日：2006-05-16
申请号：US10856833
申请日：2004-06-01
CPC分类号： H02M7/00 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.
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公开(公告)号：US20140118934A1
公开(公告)日：2014-05-01
申请号：US14126955
申请日：2012-06-15
申请人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Tokihito Suwa
发明人： Takeshi Tokuyama , Kinya Nakatsu , Ryuichi Saito , Toshiya Satoh , Tokihito Suwa
IPC分类号： H05K7/20
CPC分类号： H05K7/2089 , H01L23/367 , H01L23/4334 , H01L23/473 , H01L24/33 , H01L25/115 , H01L25/18 , H01L2224/32245 , H01L2924/07802 , H01L2924/13055 , H01L2924/13091 , H01L2924/181 , H02M7/003 , H05K7/1432 , H05K7/209 , H01L2924/00 , H01L2924/00012
摘要： A power semiconductor module includes a first package having an upper arm circuit section, a second package having a lower arm circuit section, a metal case having a storage space to store the first package and the second package and an opening connecting with the storage space, and an intermediate connecting conductor to couple the upper arm circuit section with the lower arm circuit section; the case includes a first radiating section and a second radiating section facing the first radiating section through the storage space; the first package is arranged so that the arrangement direction of the first and second packages may be parallel to the respective surfaces facing the first and second radiating sections; and the intermediate connecting conductor couples an emitter side terminal extending from the first package with a collector side terminal extending from the second package in the storage space.
摘要翻译： 功率半导体模块包括具有上臂电路部分的第一封装，具有下臂电路部分的第二封装，具有存储第一封装和第二封装的存储空间的金属外壳以及与存储空间连接的开口， 以及将上臂电路部分与下臂电路部分连接的中间连接导体; 壳体包括通过存储空间面向第一辐射部分的第一辐射部分和第二辐射部分; 第一包装被布置成使得第一和第二包装件的布置方向可以平行于面向第一和第二辐射部分的相应表面; 并且中间连接导体将从第一封装延伸的发射极侧端子与从存储空间中的第二封装延伸的集电极侧端子耦合。
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公开(公告)号：US20120282414A1
公开(公告)日：2012-11-08
申请号：US13503899
申请日：2010-10-20
申请人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
发明人： Ryuichi Saito , Kang-go Chung , Hideki Nishimura , Tatsuya Sakai
CPC分类号： C23C16/18 , C07C49/92 , C07F15/0046 , H01L21/76843 , H01L28/65
摘要： Disclosed is a ruthenium film-forming material having a lower melting point and a higher vapor pressure that facilitates supply of the material onto a base and moreover enables a high-quality ruthenium film to be obtained.A ruthenium film-forming material includes a compound represented by general formula (1) below (wherein R1 is independently at each occurrence a hydrogen atom, a halogen atom, a hydrocarbon group having 1 to 4 carbon atoms or a halogenated hydrocarbon group having 1 to 4 carbon atoms; R2 is independently at each occurrence a halogenated hydrocarbon group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogenated alkoxy group having 1 to 4 carbon atoms, with the proviso that R1 and R2 are mutually differing groups; R3 is independently at each occurrence a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms; and L is an unsaturated hydrocarbon compound having 4 to 10 carbon atoms and having at least two double bonds).
摘要翻译： 公开了一种具有较低熔点和较高蒸气压的钌膜形成材料，其有助于将材料供应到基底上，并且还能够获得高质量的钌膜。 钌膜形成材料包括由下述通式（1）表示的化合物（其中R 1在每次出现时独立地为氢原子，卤素原子，具有1至4个碳原子的烃基或卤代烃基，其具有1至 4个碳原子; R 2在每次出现时独立地为具有1至4个碳原子的卤代烃基，具有1至4个碳原子的烷氧基或具有1至4个碳原子的卤代烷氧基，条件是R 1和R 2为 相互不同的基团; R 3在每次出现时独立地为氢原子或具有1至4个碳原子的烃基; L为具有4至10个碳原子且具有至少两个双键的不饱和烃化合物）。
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