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公开(公告)号：US11904586B2
公开(公告)日：2024-02-20
申请号：US17397031
申请日：2021-08-09
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
CPC分类号： B32B3/30 , B32B7/12 , B32B9/007 , B32B2305/345 , B32B2307/202 , B32B2307/302 , B32B2307/51 , B32B2307/73 , B32B2311/16 , B32B2313/04 , B32B2333/12 , B32B2367/00 , B32B2379/08 , B32B2383/00 , B32B2457/14
摘要： A hydrophobic film is provided. The hydrophobic film includes a flexible substrate; a hydrophobic layer located on the flexible substrate, a heating layer, a first electrode and a second electrode spaced apart from the first electrode. The hydrophobic layer comprises a base and a patterned bulge layer on a surface of the base away from the flexible substrate. The heating layer is on a surface of the flexible substrate away from the hydrophobic layer. The first electrode and the second electrode are electrically connected to and in direct contact with the heating layer.
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公开(公告)号：US11747730B2
公开(公告)日：2023-09-05
申请号：US17144312
申请日：2021-01-08
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
CPC分类号： G03F7/20 , G03F1/48 , G03F1/50 , G03F7/2047 , G03F7/30
摘要： A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.
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公开(公告)号：US11613469B2
公开(公告)日：2023-03-28
申请号：US17215241
申请日：2021-03-29
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： C01B32/174 , C01B32/162 , B82Y40/00 , B82Y30/00
摘要： A light absorber preform solution includes a solvent, a plurality of carbon nanotubes entangled with each other to form a network structure, and a plurality of carbon particles in the network structure. The plurality of carbon nanotubes and the plurality of carbon particles are in the solvent.
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公开(公告)号：US11264516B2
公开(公告)日：2022-03-01
申请号：US15846218
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/06 , H01L29/08 , H01L29/872 , H01L51/05 , H01L51/00 , H01L51/10 , H01L29/24 , H01L29/417 , H01L29/49 , B82Y10/00 , H01L29/775
摘要： A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US11247430B2
公开(公告)日：2022-02-15
申请号：US16221964
申请日：2018-12-17
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
摘要： The disclosure relates to a hydrophobic film according to one embodiment is provided. The hydrophobic film includes a flexible substrate and a hydrophobic layer. The flexible substrate comprises a flexible base and a patterned first bulge layer located on a surface of the flexible base. The hydrophobic layer is located on the surface of the patterned first bulge layer.
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26.发明授权公开(公告)号：US10680119B2
公开(公告)日：2020-06-09
申请号：US16239580
申请日：2019-01-04
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/87 , H01L29/66 , H01L51/00 , H01L29/872 , H01L29/24 , H01L29/20 , H01L29/16 , H01L29/04 , H01L51/05 , H01L21/28 , H01L29/06 , B82Y10/00 , H01L29/49 , H01L29/786 , H01L29/47 , H01L29/775
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10606167B2
公开(公告)日：2020-03-31
申请号：US15684428
申请日：2017-08-23
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
IPC分类号： G03F1/50 , H01L21/308 , H01L21/027 , H01L51/00 , G03F1/54
摘要： A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube composite structure on a surface of the substrate, wherein the carbon nanotube composite structure comprises a carbon nanotube layer and a chrome layer coated on the carbon nanotube layer; a cover layer on the carbon nanotube composite structure.
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公开(公告)号：US10564539B2
公开(公告)日：2020-02-18
申请号：US15684244
申请日：2017-08-23
发明人： Mo Chen , Qun-Qing Li , Li-Hui Zhang , Yuan-Hao Jin , Dong An , Shou-Shan Fan
摘要： A photolithography mask plate, the photolithography mask plate including: a substrate; a carbon nanotube layer on the substrate; a patterned chrome layer on the carbon nanotube layer, wherein the patterned chrome layer and the carbon nanotube layer have the same pattern; a cover layer on the patterned chrome layer.
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公开(公告)号：US10374180B2
公开(公告)日：2019-08-06
申请号：US15846217
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/06 , H01L29/16 , H01L29/20 , H01L29/24 , H01L29/49 , H01L51/00 , H01L51/05 , H01L51/10 , H01L29/417 , H01L29/775 , H01L29/872 , B82Y10/00
摘要： A thin film transistor includes a gate, an insulating medium layer and a Schottky diode. The Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode is located on the surface of the insulating medium layer and includes a first metal layer and a second metal layer. The second electrode is located on the surface of the insulating medium layer and includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure includes a carbon nanotube structure.
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公开(公告)号：US10300679B2
公开(公告)日：2019-05-28
申请号：US15961969
申请日：2018-04-25
发明人： Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： B32B15/08 , G06F3/044 , C03C17/09 , C23C14/20 , C23C14/58 , C23C16/06 , C23C16/56 , C23C30/00 , C23F4/00 , G06F3/047 , H05K1/02 , H05K1/03 , H05K1/09 , B32B5/02 , H01B1/02 , H01B1/16
摘要： The disclosure relates to a touch panel. The touch panel includes a substrate having a surface, a metal nanowire film, at least one electrode, and a conductive trace. The metal nanowire film includes a metal nanowire film. The metal nanowire film includes a number of first metal nanowire bundles parallel with and spaced from each other. Each of the number of first metal nanowire bundles includes a number of first metal nanowires parallel with each other. The first distance between adjacent two of the number of first metal nanowires is less than the second distance between adjacent two of the number of first metal nanowire bundles.
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