摘要:
In a level conversion circuit mounted in an integrated circuit device using a plurality of high- and low-voltage power supplies, the input to the differential inputs are provided. In a level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source use a thin oxide layer. In a level-up circuit, a logic operation function is provided.
摘要:
A semiconductor integrated circuit device including an I/O circuitry capable of low-voltage high-speed operation at low cost is provided. In the I/O circuitry, when an I/O voltage (for example, 3.3 V) is lowered to a predetermined voltage (for example, 1.8 V), portions causing a speed deterioration are a level conversion unit and a pre-buffer unit for driving a main large-sized buffer. In view of this, a high voltage is applied to a level up converter and a pre-buffer circuit. By doing so, it is possible to achieve an I/O circuitry capable of low-voltage high-speed operation at low cost.
摘要:
The invention intends to provide a semiconductor device capable of preventing an electrostatic breakdown especially by the CDM, of the electrostatic breakdowns generated between plural power supply systems, with a few number of protection circuits. The semiconductor device includes a first circuit block that operates with a first power supply voltage and a first reference voltage, and a second circuit block that operates with a second power supply voltage and a second reference voltage. Further, the semiconductor device includes a first clamp circuit that clamps a potential between the first power supply voltage and the second reference voltage, a second clamp circuit that clamps a potential between the second power supply voltage and the first reference voltage, and a third clamp circuit that clamps a potential between the first reference voltage and the second reference voltage.
摘要:
The gain control circuit controls the amplification ratio of EDFA based on the results of having measured the input power monitor which monitors the EDFA input optical level which amplifies light and of having measured the output power monitor which monitors the output optical level. The optical pre-amplifier receives a notice of the number of wavelengths from a fore node and a notice of whether the optical post-amplifier of a fore node is in normal operation by a supervisory control signal, and changes over the gain control circuit to either the ALC or AGC mode. When the number of wavelengths changes while the optical pre-amplifier is operating in the ALC mode, the optical pre-amplifier is controlled in the AGC mode using the backed-up amplifier gain. Also, the gain value when the optical pre-amplifier is in routine operation is backed up in an amplifier gain back-up unit and an back-up unit.
摘要:
The present invention is directed to a wireless communication system capable of keeping a level of a wireless signal received by a relay apparatus (20) within a predetermined dynamic range. In a control apparatus (10), a transmitting section (102) converts a downstream electric signal into a downstream optical signal and transmits the downstream optical signal to the relay apparatus (20) via an optical transmission path (40). The relay apparatus (20) converts the received downstream optical signal into a downstream electric signal and transmits the downstream electric signal as a wireless signal to a wireless communication terminal (30) from a transmitting/receiving antenna section (204). In the relay apparatus (20), a level adjustment section (207) adjusts the level of the wireless signal transmitted by the relay apparatus (20) such that the receiving level of the wireless signal received by the relay apparatus is kept within a predetermined range.
摘要:
In a method for controlling temperatures in a semiconductor manufacturing apparatus including a reaction chamber and a plurality of heating sources, a set of power ratios to be fed to the heating sources is determined for each of two or more selected temperatures. Then, a temperature of the reaction chamber is controlled by performing power control on the heating sources based on at least one set of power ratios obtained.
摘要:
A first plate member constitutes a part of a main frame of a liquid ejection apparatus. A second plate member is extended from the first plate member such that a first part thereof opposes to a traveling path of a carriage which carries a plurality of liquid containers each provided with an IC chip and a receiving antenna. A transmission antenna is provided on an antenna board. The antenna board is mounted on the first part of the second plate member. The second plate member is formed with a first region which allows the transmission antenna to establish radio communication with the receiving antenna, and a second region which shields radio waves.
摘要:
A temperature control simulation method and apparatus for forming a temperature system simulation model on a computer, provide substantially the same response or simulation characteristics as a temperature change in an actual furnace, whereby a temperature control algorithm can be developed and the method or manner of manipulating the temperature control can be learned without using an actual furnace. A transfer function is determined which represents a relationship between a heater input and a temperature output. A temperature control simulation for a heating furnace is executed using the transfer function of a heating furnace as a transfer function that a temperature system simulation device uses.
摘要:
A process for refined pyromellitic anhydride which comprises dissolving crude pyromellitic acid or crude pyromellitic anhydride in water, then cooling an aqueous solution thus obtained to perform crystallization as pyromellitic acid, then separating a crystal thus obtained from water, then anhydrating the crystal of pyromellitic acid thus separated with heating to produce pyromellitic anhydride, then vaporizing pyromellitic anhydride thus produced, cooling vapor of pyromellitic anhydride thus obtained, and thereby, recovering a refined crystal of pyromellitic anhydride.