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49 条记录 (耗时 0.022 秒)

    Photodetector for backside-illuminated sensor
    21.
    发明授权
    Photodetector for backside-illuminated sensor 有权
    背面照明传感器的光电探测器

    公开(公告)号：US07939903B2

    公开(公告)日：2011-05-10

    申请号：US12651236

    申请日：2009-12-31

    申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    IPC分类号： H01L31/00 ,  H01L31/062

    CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

    摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a metal gate that includes a reflective layer.

    摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光栅结构具有包括反射层的金属栅极。

    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS
    23.
    发明申请
    APPARATUS AND METHOD FOR REDUCING OPTICAL CROSS-TALK IN IMAGE SENSORS 审中-公开
    用于减少图像传感器中的光学交叉的装置和方法

    公开(公告)号：US20090020838A1

    公开(公告)日：2009-01-22

    申请号：US11779122

    申请日：2007-07-17

    申请人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    发明人： Chin-Min Lin ,  Dun-Nian Yaung ,  Ching-Chun Wang ,  Tzu-Hsuan Hsu ,  Chun-Ming Su

    IPC分类号： H01L31/0232 ,  H01L21/00

    CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643 ,  H04N9/045

    摘要： An image sensor device includes a semiconductor substrate having a front surface and a back surface; an array of pixels formed on the front surface of the semiconductor substrate, each pixel being adapted for sensing light radiation; an array of color filters formed over the plurality of pixels, each color filter being adapted for allowing a wavelength of light radiation to reach at least one of the plurality of pixels; and an array of micro-lens formed over the array of color filters, each micro-lens being adapted for directing light radiation to at least one of the color filters in the array. The array of color filters includes structure adapted for blocking light radiation that is traveling towards a region between adjacent micro-lens.

    摘要翻译： 图像传感器装置包括具有前表面和后表面的半导体衬底; 形成在所述半导体衬底的前表面上的像素阵列，每个像素适于感测光辐射; 形成在所述多个像素上的滤色器阵列，每个滤色器适于允许光辐射的波长到达所述多个像素中的至少一个像素; 以及形成在滤色器阵列上的微透镜阵列，每个微透镜适于将光辐射引导到阵列中的至少一个滤色器。 滤色器阵列包括适于阻挡朝向相邻微透镜之间的区域传播的光辐射的结构。

    Image sensor element for backside-illuminated sensor
    24.
    发明授权
    Image sensor element for backside-illuminated sensor 有权
    用于背面照明传感器的图像传感器元件

    公开(公告)号：US07999342B2

    公开(公告)日：2011-08-16

    申请号：US11859848

    申请日：2007-09-24

    申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14625 ,  H01L27/14603 ,  H01L27/1464

    摘要： Provided is a backside-illuminated sensor including a semiconductor substrate having a front surface and a back surface. A plurality of image sensor elements are formed on the front surface of the semiconductor substrate. At least one of the image sensor elements includes a transfer transistor and a photodetector. The gate of the transfer transistor includes an optically reflective layer. The gate of the transfer transistor, including the optically reflective layer, overlies the photodetector. In one embodiment, the gate overlies the photodetector by at least 5%.

    摘要翻译： 提供了一种背面照明传感器，其包括具有前表面和后表面的半导体基板。 多个图像传感器元件形成在半导体衬底的前表面上。 图像传感器元件中的至少一个包括传输晶体管和光电检测器。 转移晶体管的栅极包括光反射层。 包括光反射层的传输晶体管的栅极覆盖在光电检测器上。 在一个实施例中，栅极覆盖光电探测器至少5％。

    Method to optimize substrate thickness for image sensor device
    27.
    发明授权
    Method to optimize substrate thickness for image sensor device 有权
    优化图像传感器设备基板厚度的方法

    公开(公告)号：US07838325B2

    公开(公告)日：2010-11-23

    申请号：US12371146

    申请日：2009-02-13

    申请人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Alex Hsu ,  Ching-Chun Wang

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14689 ,  H01L21/26513 ,  H01L27/1463

    摘要： Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths.

    摘要翻译： 提供一种制造图像传感器装置的方法，该图像传感器装置包括提供具有正面和背面的基板; 在衬底的前侧上形成光致抗蚀剂以限定具有第一宽度的开口，光致抗蚀剂具有与第一宽度相关的第一厚度; 通过使用与第一厚度相关的注入能量通过开口执行注入工艺，从而形成第一掺杂隔离特征; 形成与所述第一掺杂隔离特征相邻的光感测特征，所述光感测特征具有第二宽度; 以及从背面使衬底变薄，使得衬底具有不超过第一掺杂隔离特征深度的两倍的第二厚度。 像素尺寸基本上等于第一和第二宽度。

    Photodetector for backside-illuminated sensor
    28.
    发明授权
    Photodetector for backside-illuminated sensor 有权
    背面照明传感器的光电探测器

    公开(公告)号：US07656000B2

    公开(公告)日：2010-02-02

    申请号：US11753480

    申请日：2007-05-24

    申请人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    发明人： Tzu-Hsuan Hsu ,  Dun-Nian Yaung ,  Ching-Chun Wang

    IPC分类号： H01L31/00 ,  H01L31/062

    CPC分类号： H01L27/14643 ,  H01L27/14625 ,  H01L27/1464

    摘要： A backside-illuminated sensor including a semiconductor substrate. The semiconductor substrate has a front surface and a back surface. A plurality of pixels are formed on the front surface of the semiconductor substrate. At least one pixel includes a photogate structure. The photogate structure has a gate that includes a reflective layer.

    摘要翻译： 背面照明传感器，包括半导体衬底。 半导体衬底具有前表面和后表面。 在半导体衬底的前表面上形成多个像素。 至少一个像素包括光栅结构。 光门结构具有包括反射层的栅极。

    Image sensor having compressive layers
    29.
    发明授权
    Image sensor having compressive layers 有权
    具有压缩层的图像传感器

    公开(公告)号：US09059057B2

    公开(公告)日：2015-06-16

    申请号：US13492258

    申请日：2012-06-08

    申请人： Chun-Han Tsao ,  Chih-Yu Lai ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Shyh-Fann Ting ,  Chia-Shiung Tsai

    发明人： Chun-Han Tsao ,  Chih-Yu Lai ,  Chih-Hui Huang ,  Cheng-Ta Wu ,  Yeur-Luen Tu ,  Ching-Chun Wang ,  Shyh-Fann Ting ,  Chia-Shiung Tsai

    IPC分类号： H01L31/102 ,  H01L21/00 ,  H01L27/146 ,  H01L27/148

    CPC分类号： H01L31/02164 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/148 ,  H01L51/4273

    摘要： An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.

    摘要翻译： 一种包括具有阵列区域和黑色电平校正区域的半导体衬底的图像传感器装置。 阵列区域包含多个辐射敏感像素。 黑色电平校正区域包含一个或多个参考像素。 基板具有前侧和后侧。 图像传感器装置包括形成在基板的背面上的第一压缩应力层。 第一压应力层含有氧化硅，带负电荷。 第二压应力层含有氮化硅，带负电荷。 在黑色电平校正区域的至少一部分上形成金属屏蔽。 图像传感器装置包括形成在金属屏蔽和第二压缩应力层上的第三压缩应力层。 第三压缩应力层含有氧化硅。 金属屏蔽层的侧壁由第三压应力层保护。