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公开(公告)号：US08222041B2
公开(公告)日：2012-07-17
申请号：US12990377
申请日：2009-05-08
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： G01N33/497 , G01N27/00
CPC分类号： G01N33/004 , G01N27/4141 , Y10T436/20 , Y10T436/204998 , Y10T436/207497
摘要： A high electron mobility transistor (HEMT) capable of performing as a CO2 or O2 sensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.
摘要翻译： 公开了能够作为CO 2或O 2传感器执行的高电子迁移率晶体管（HEMT）。 在一个实施方案中，聚合物太阳能电池可以连接到用于红外检测系统的HEMT。 在第二实施例中，可以在HEMT的栅极区域上提供选择性识别层。 对于二氧化碳感测，在一个实例中，选择性识别层可以是PEI /淀粉。 对于氧气感测，在一个示例中，选择性识别层可以是氧化铟锌（IZO）。 在一个应用中，HEMT可用于检测呼出气或血液中的二氧化碳和氧气。
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公开(公告)号：US20120058488A1
公开(公告)日：2012-03-08
申请号：US13319417
申请日：2010-05-06
CPC分类号： G01N33/56905 , G01N27/414 , G01N27/4145 , Y02A50/52
摘要： Embodiments of the present Invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.
摘要翻译： 本发明的实施方案提供用于海洋或淡水病原体感测的抗体功能化的高电子迁移率晶体管（HEMT）装置。 在一个实施方案中，海洋病原体可以是牛皮癣菌（Perkinsus marinus）。 感测单元可以包括在HEMT上制造的无线发射器。 感测单元允许在不直接进入电源插座的地区进行测试，并可以使用无线发射器将测试结果发送到中央位置。 根据实施例，可以在几秒钟内实现测试结果。
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公开(公告)号：US20110084713A1
公开(公告)日：2011-04-14
申请号：US12997163
申请日：2008-11-13
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： G01R27/08 , H01L29/778 , H01L21/335
CPC分类号： G01N27/414
摘要： A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications.
摘要翻译： 公开了能够作为氯传感器执行的高电子迁移率晶体管（HEMT）。 在一个实施方式中，可以在HEMT的栅极区域上提供氯化银层。 在一个应用中，HEMT可用于测量和检测生物感应应用中的氯化物。 在另一个应用中，HEMT可用于检测水中的氯化物，以用于环境和健康应用。
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公开(公告)号：US20100170325A1
公开(公告)日：2010-07-08
申请号：US12443297
申请日：2006-10-05
申请人： Fan Ren , Jenshan Lin , David Paul Norton , Stephen John Pearton
发明人： Fan Ren , Jenshan Lin , David Paul Norton , Stephen John Pearton
IPC分类号： G01N7/00
CPC分类号： G01N27/127 , G01N27/129 , G01N33/0073
摘要： Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit.
摘要翻译： 示例性实施例提供了一种自供电无线气体传感器系统和使用该系统的气体感测方法。 该系统可用于检测和不断跟踪包括氢气，臭氧和/或任何碳氢化合物气体在内的各种气体的存在，并远程传输感测信号。 该系统可以包括消耗小于约30纳瓦功率的低功率气体传感器。 因此，该系统可以检测约10ppm氢气的存在。 传感器还可以提供约1-2秒的快速响应时间。 在各种实施例中，系统可以物理上小，并且将所有部件组装成单个紧凑单元进行封装。
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公开(公告)号：US5981319A
公开(公告)日：1999-11-09
申请号：US935121
申请日：1997-09-22
申请人： James Robert Lothian , Fan Ren
发明人： James Robert Lothian , Fan Ren
IPC分类号： H01L21/027 , H01L21/285 , H01L21/335 , H01L21/338 , H01L29/423 , H01L29/778 , H01L29/812
CPC分类号： H01L29/66462 , H01L21/0272 , H01L21/28581 , H01L21/28587 , H01L29/42316
摘要： The specification describes methods for making T-shaped metal gates for Schottky gate devices such as MESFETs and HEMTs. The method uses a bi-level photoresist technique to create a T-shaped feature for the gate structure. The metal gate is evaporated into the photoresist T-shaped feature and a lift-off process is used to remove unwanted metal. The photoresist is the dissolved away leaving the T-shaped gate. An important aspect of the process is the use of a plasma treatment of the first patterned resist level to harden it so that it is unaffected by the subsequent deposition and patterning of the second level resist.
摘要翻译： 该说明书描述了用于制造诸如MESFET和HEMT之类的肖特基栅极器件的T形金属栅极的方法。 该方法使用双电平光刻胶技术来形成用于栅极结构的T形特征。 金属栅极被蒸发成光致抗蚀剂T形特征，并且使用剥离过程来去除不需要的金属。 光致抗蚀剂被离开离开T形门。 该方法的一个重要方面是使用第一图案化抗蚀剂层的等离子体处理使其硬化，使得其不受第二级抗蚀剂的随后沉积和图案化的影响。
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公开(公告)号：US5227006A
公开(公告)日：1993-07-13
申请号：US799269
申请日：1991-11-27
IPC分类号： C23C16/30 , C30B25/14 , H01L21/20 , H01L21/203 , H01L21/205 , H01L21/306 , H01L21/331 , H01L29/205
CPC分类号： H01L21/02046 , H01L21/02463 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L29/66318
摘要： In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAs) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbon "getters". When DAAAs are used as an arsenic source, the DAAAs getter carbon impurities from the gallium source. Thus, for example, DAAAs can be used as an arsenic source in combination with TMG as a gallium source to selectively grow high purity or n-type layers of gallium arsenide at low temperatures below 600.degree. C. In addition DMAAs has been found to be an excellent cleaning agent for gallium arsenide materials.
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公开(公告)号：US5106771A
公开(公告)日：1992-04-21
申请号：US710594
申请日：1991-06-05
申请人： Adrian B. Emerson , Fan Ren
发明人： Adrian B. Emerson , Fan Ren
IPC分类号： H01L29/812 , H01L21/285 , H01L21/306 , H01L21/338
CPC分类号： H01L21/02052 , H01L21/28581 , H01L29/66863 , Y10S438/906 , Y10S438/909
摘要： This invention is concerned with the production of Schottky barrier gate contacts in MESFET devices. The contact is produced by wet-chemical removal of native oxide in a sealed inert gas ambient and blow-drying the wet-etched surface with the inert gas prior to deposition of gate electrode metal on GaAs by electron beam evaporation in an inert gas ambient. Use of Pt, due to its higher metal work function, as the gate contact metal results in a Schottky barrier height of 0.98 eV for Pt on n-type GaAs. This is considerably higher than the barrier height of conventionally processed TiPtAu contacts (0.78 eV). To lower the sheet resistivity of the gate contact, Pt is preferably used as a milti-layer contact in combination with metal having lower sheet resistivity, with Pt being in direct contact with the n-type GaAs surface, MESFETs fabricated using PtAu bilayer contacts show reverse currents an order of magnitude lower than TiPtAu-contacted companion devices, higher reverse breakdown voltages and much lower gate leakage. The use of this technology of native oxide removal and the PtAu bilayer contact provides a much simpler method of enhancing the barrier height on n-type GaAs than other techniques such as counter-doping the near-surface or inserting an interfacial layer.
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公开(公告)号：US10067129B2
公开(公告)日：2018-09-04
申请号：US13319417
申请日：2010-05-06
IPC分类号： G01N33/569 , G01N27/414
摘要： Embodiments of the present Invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.
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公开(公告)号：US08836351B2
公开(公告)日：2014-09-16
申请号：US12997163
申请日：2008-11-13
申请人： Fan Ren , Stephen John Pearton
发明人： Fan Ren , Stephen John Pearton
IPC分类号： G01R27/08 , H01L29/737 , G01N27/414
CPC分类号： G01N27/414
摘要： A high electron mobility transistor (HEMT) capable of performing as a chlorine sensor is disclosed. In one implementation, a silver chloride layer can be provided on a gate region of the HEMT. In one application, the HEMTs can be used for the measurement and detection of chloride in bio-sensing applications. In another application, the HEMTs can be used for the detection of chloride in water for environmental and health applications.
摘要翻译： 公开了能够作为氯传感器执行的高电子迁移率晶体管（HEMT）。 在一个实施方式中，可以在HEMT的栅极区域上提供氯化银层。 在一个应用中，HEMT可用于测量和检测生物感应应用中的氯化物。 在另一个应用中，HEMT可用于检测水中的氯化物，以用于环境和健康应用。
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公开(公告)号：US08835984B2
公开(公告)日：2014-09-16
申请号：US12992002
申请日：2009-03-20
申请人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
发明人： Fan Ren , Stephen John Pearton , Tanmay Lele , Hung-Ta Wang , Byoung-Sam Kang
IPC分类号： H01L29/72 , G01N27/414
CPC分类号： G01N27/414
摘要： Embodiments of the invention include sensors comprising AlGaAs/GaAs high electron mobility transistors (HEMTs), inGaP/GaAs HEMTs. InAlAs/InGaAs HEMTs, AlGaAs/InGaAs PHEMTs, InAlAs/InGaAs PHEMTs, Sb based HEMTs, or InAs based HEMTs, the HEMTs having functionalization at a gate surface with target receptors. The target receptors allow sensitivity to targets (or substrates) for detecting breast cancer, prostate cancer, kidney injury, chloride, glucose, metals or pEI where a signal is generated by the HEMI when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
摘要翻译： 本发明的实施例包括具有InGaP / GaAs HEMT的AlGaAs / GaAs高电子迁移率晶体管（HEMT）的传感器。 InAlAs / InGaAs HEMT，AlGaAs / InGaAs PHEMT，InAlAs / InGaAs PHEMT，Sb基HEMT或基于InAs的HEMT，HEMT在门表面具有目标受体的功能化。 目标受体允许敏感性用于检测乳腺癌，前列腺癌，肾损伤，氯化物，葡萄糖，金属或pEI的目标（或底物），当溶液与传感器接触时，HEMI产生信号。 解决方案可以是血液，唾液，尿液，呼吸冷凝液或任何怀疑含有传感器特定分析物的溶液。
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