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    Laser induced mass spectrometry
    1.
    发明授权
    Laser induced mass spectrometry 失效
    激光诱导质谱

    公开(公告)号：US5382794A

    公开(公告)日：1995-01-17

    申请号：US175164

    申请日：1993-12-29

    申请人： Stephen W. Downey ,  Adrian B. Emerson ,  Anthony M. Mujsce ,  Amy J. Muller ,  William D. Reents, Jr. ,  James D. Sinclair ,  Alka Swanson

    发明人： Stephen W. Downey ,  Adrian B. Emerson ,  Anthony M. Mujsce ,  Amy J. Muller ,  William D. Reents, Jr. ,  James D. Sinclair ,  Alka Swanson

    IPC分类号： G01N15/02 ,  G01N15/10 ,  G01N15/14 ,  G01N27/62 ,  G01N27/64 ,  H01J49/04 ,  H01J49/10 ,  H01J49/16 ,  B01D59/44 ,  H01J49/00

    CPC分类号： H01J49/162 ,  H01J49/0095 ,  H01J49/0422

    摘要： Disclosed is an apparatus which can serve to detect, count, size discriminate and analyze the chemical composition of particles in the air or process gases. In a preferred embodiment, the particles enter via a capillary into a differentially pumped chamber. A pulsed laser which is continuously fired is focused at an opening in the chamber. When the particles come into the path of the laser beam, the particles are fragmented and ionized. A dual time of flight mass spectrum is produced, recorded with an oscilloscope and analyzed with a computer. The mass spectrum information enables the determination of the chemical nature and concentration of the species of the particles, the particle size and the elemental composition of airborne particles in real time. Once these parameters are determined the source of the particles can be determined and eliminated from the environment and process. Thus, the inventive apparatus is advantageously used in conjunction with a facility, i.e., a semiconductor manufacturing facility, that requires ultra-clean conditions.

    摘要翻译： 公开了一种可以用于检测，计数，大小鉴别和分析空气或处理气体中的颗粒的化学组成的装置。 在一个优选的实施方案中，颗粒通过毛细管进入差分抽吸室。 连续点火的脉冲激光聚焦在腔室的开口处。 当颗粒进入激光束的路径时，颗粒被分裂和离子化。 产生双倍的飞行质谱时间，用示波器记录并用计算机分析。 质谱信息能够实时确定颗粒物质的化学性质和浓度，颗粒尺寸和空气中颗粒的元素组成。 一旦确定了这些参数，就可以从环境和过程中确定和消除颗粒的来源。 因此，本发明的装置有利地与需要超清洁条件的设施，即半导体制造设备结合使用。

    GaAs MESFETs with enhanced Schottky barrier
    3.
    发明授权
    GaAs MESFETs with enhanced Schottky barrier 失效
    具有增强的肖特基势垒的GaAs MESFET

    公开(公告)号：US5106771A

    公开(公告)日：1992-04-21

    申请号：US710594

    申请日：1991-06-05

    申请人： Adrian B. Emerson ,  Fan Ren

    发明人： Adrian B. Emerson ,  Fan Ren

    IPC分类号： H01L29/812 ,  H01L21/285 ,  H01L21/306 ,  H01L21/338

    CPC分类号： H01L21/02052 ,  H01L21/28581 ,  H01L29/66863 ,  Y10S438/906 ,  Y10S438/909

    摘要： This invention is concerned with the production of Schottky barrier gate contacts in MESFET devices. The contact is produced by wet-chemical removal of native oxide in a sealed inert gas ambient and blow-drying the wet-etched surface with the inert gas prior to deposition of gate electrode metal on GaAs by electron beam evaporation in an inert gas ambient. Use of Pt, due to its higher metal work function, as the gate contact metal results in a Schottky barrier height of 0.98 eV for Pt on n-type GaAs. This is considerably higher than the barrier height of conventionally processed TiPtAu contacts (0.78 eV). To lower the sheet resistivity of the gate contact, Pt is preferably used as a milti-layer contact in combination with metal having lower sheet resistivity, with Pt being in direct contact with the n-type GaAs surface, MESFETs fabricated using PtAu bilayer contacts show reverse currents an order of magnitude lower than TiPtAu-contacted companion devices, higher reverse breakdown voltages and much lower gate leakage. The use of this technology of native oxide removal and the PtAu bilayer contact provides a much simpler method of enhancing the barrier height on n-type GaAs than other techniques such as counter-doping the near-surface or inserting an interfacial layer.