公开(公告)号：US08082798B2

公开(公告)日：2011-12-27

申请号：US12857380

申请日：2010-08-16

申请人： Gilberto Morales ,  Carl E. Stewart ,  Richard A. Davis ,  Alistair D. Bradley

发明人： Gilberto Morales ,  Carl E. Stewart ,  Richard A. Davis ,  Alistair D. Bradley

IPC分类号： G01L1/00

CPC分类号： G01L19/146 ,  G01L19/04 ,  H01L2924/15151

摘要： The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.

摘要翻译： 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上，保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性，并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积，从而与包装形成牢固的结合。

公开(公告)号：US20100301435A1

公开(公告)日：2010-12-02

申请号：US12857380

申请日：2010-08-16

申请人： Gilberto Morales ,  Carl E. Stewart ,  Richard A. Davis ,  Alistair D. Bradley

发明人： Gilberto Morales ,  Carl E. Stewart ,  Richard A. Davis ,  Alistair D. Bradley

IPC分类号： H01L29/84 ,  H01L21/02 ,  H01L23/12

CPC分类号： G01L19/146 ,  G01L19/04 ,  H01L2924/15151

摘要： The sensor geometry for improved package stress isolation is disclosed. A counterbore on the backing plate improves stress isolation properties of the sensor. The counterbore thins the wall of the backing plate maintaining the contact area with the package. The depth and diameter of the counterbore can be adjusted to find geometry for allowing the backing plate to absorb more package stresses. Thinning the wall of the backing plate make it less rigid and allows the backing plate to absorb more of the stresses produced at the interface with the package. The counterbore also keeps a large surface area at the bottom of the backing plate creating a strong bond with the package.

摘要翻译： 公开了用于改进封装应力隔离的传感器几何形状。 背板上的沉孔提高了传感器的应力隔离性能。 沉头孔沉浸在背板的壁上，保持与包装件的接触面积。 可以调节沉孔的深度和直径以找到允许背板吸收更多包装应力的几何形状。 使背板的壁变薄使其较不刚性，并且允许背板吸收在与封装的界面处产生的更多的应力。 沉孔还在背板的底部保持较大的表面积，从而与包装形成牢固的结合。

公开(公告)号：US20090007681A1

公开(公告)日：2009-01-08

申请号：US11825237

申请日：2007-07-05

申请人： Carl E. Stewart ,  Gilberto Morales ,  Richard A. Davis

发明人： Carl E. Stewart ,  Gilberto Morales ,  Richard A. Davis

IPC分类号： G01L9/06 ,  H01B13/00

CPC分类号： G01L9/0042 ,  G01L9/0054

摘要： A gauge pressure sensor apparatus and a method of forming the same. A constraint wafer can be partially etched to set the diaphragm size, followed by bonding to a top wafer. The thickness of the top wafer is either the desired diaphragm thickness or is thinned to the desired thickness after bonding. The bonding of top wafer and constraint wafer enables electrochemical etch stopping. This allows the media conduit to be etched through the back of the constraint wafer and an electrical signal produced when the etching reaches the diaphragm. The process prevents the diaphragm from being over-etched. The invention allows the die size to be smaller than die where the diaphragm size is set by etching from the back side.

摘要翻译： 表压传感器装置及其形成方法。 可以部分地蚀刻约束晶片以设置膜片尺寸，然后粘结到顶部晶片。 顶部晶片的厚度是所需的隔膜厚度，或者在粘结后被减薄到所需的厚度。 顶部晶片和约束晶片的结合使得电化学蚀刻停止。 这允许介质管道被蚀刻通过约束晶片的背面和当蚀刻到达隔膜时产生的电信号。 该过程防止隔膜过度蚀刻。 本发明允许模具尺寸小于通过从背面蚀刻设置膜片尺寸的模具。

公开(公告)号：US07308011B2

公开(公告)日：2007-12-11

申请号：US10617892

申请日：2003-07-11

申请人： Ralph H. Johnson ,  Gilberto Morales

发明人： Ralph H. Johnson ,  Gilberto Morales

IPC分类号： H01S5/00

CPC分类号： H01S5/18391 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A single mode VCSEL including a substrate having a lower surface and an upper surface, a bottom electrical contact disposed along the lower surface of the substrate, a lower mirror portion disposed upon the upper surface of the substrate, an active region disposed upon the lower mirror portion, an upper mirror portion disposed upon the active region, an equipotential layer disposed upon the upper mirror portion, an insulating layer interposed between the upper mirror portion and the equipotential layer and adapted to form an aperture therebetween, and an upper contact portion disposed upon the equipotential layer outside the perimeter of the aperture.

摘要翻译： 单模VCSEL，其包括具有下表面和上表面的基板，沿着基板的下表面设置的底部电触点，设置在基板的上表面上的下反射镜部分，设置在下反射镜上的有源区域 设置在有源区上的上镜部分，设置在上反射镜部分上的等电位层，插入在上反射镜部分和等电位层之间并适于在其间形成孔的绝缘层，以及设置在上反射镜部分上的上接触部分 孔径周边外的等电位层。

公开(公告)号：US07221691B2

公开(公告)日：2007-05-22

申请号：US10617290

申请日：2003-07-10

申请人： Ralph H. Johnson ,  Gilberto Morales

发明人： Ralph H. Johnson ,  Gilberto Morales

IPC分类号： H01S5/00 ,  H01S3/08

CPC分类号： H01S5/18391 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S2301/166

摘要： A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active region can include multiple layers and may be formed to be have substantially isotropic conductivity. The layers in the upper mirror can include a lightly doped DBR layer, a heavily doped second layer including an isolation region, and a third heavily doped DBR layer. The active region may include conduction layers, which may be periodically doped, to improve conductivity and reduce free carrier absorption.

摘要翻译： 一种用于提供单模VCSEL（垂直腔表面发射激光）的系统和方法。 下反射镜形成在基板上。 在下反射镜上形成包括一个或多个量子阱的有源区。 形成在有源区上的上反射镜可以包括多个层，并且可以形成为具有基本上各向同性的导电性。 上反射镜中的层可以包括轻掺杂DBR层，包括隔离区的重掺杂第二层和第三重掺杂DBR层。 有源区可以包括导电层，其可以是周期性掺杂的，以改善导电性并减少自由载流子吸收。

公开(公告)号：US07755466B2

公开(公告)日：2010-07-13

申请号：US11412460

申请日：2006-04-26

申请人： Scott E. Beck ,  Gilberto Morales

发明人： Scott E. Beck ,  Gilberto Morales

IPC分类号： H01C3/04

CPC分类号： G01F1/6845 ,  G01F1/6847

摘要： A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.

摘要翻译： 倒装芯片流量传感器在基板的顶部具有诸如温度传感器和加热器的电气部件，并且在基板的底部形成通道。 通道由衬底材料的膜与衬底的顶部分离。 流经通道的流体与加热器，上游温度传感器，下游温度传感器，接合焊盘和膜的引线接合分离。 由于膜薄，热容易流过膜。 因此，流量传感器，接合焊盘和电线的电气元件与流过通道的流体物理分离，但是由于它们不是热隔离的，所以可以正常工作。

公开(公告)号：US20090206424A1

公开(公告)日：2009-08-20

申请号：US12032763

申请日：2008-02-18

申请人： Wayne T. Kilian ,  Gilberto Morales

发明人： Wayne T. Kilian ,  Gilberto Morales

IPC分类号： H01L29/82 ,  H01L21/00

CPC分类号： H01L29/82 ,  G01R33/07 ,  H01L27/22 ,  H01L43/065

摘要： A Hall-effect device with a merged and/or non-merged complementary structure in order to cancel stress induced offsets includes an n-type epitaxial Hall element and a p-type Hall element. The p-type Hall element can be implanted directly on top of the n-type epitaxial Hall element. The merged Hall elements can be biased in parallel to provide a zero-bias depletion layer throughout for isolation. The output of the p-type Hall element can be connected to the geometrically corresponding output of the n-type epitaxial Hall element through a suitable resistance. The output signal can be taken at the outputs of the n-type element. The Hall-effect device can be constructed utilizing standard processes.

摘要翻译： 具有合并和/或非合并互补结构以消除应力引起的偏移的霍尔效应器件包括n型外延霍尔元件和p型霍尔元件。 p型霍尔元件可以直接注入在n型外延霍尔元件的顶部。 合并的霍尔元件可以平行偏置，以提供整个零偏压耗尽层用于隔离。 p型霍尔元件的输出可以通过适当的电阻连接到n型外延霍尔元件的几何相应的输出。 输出信号可以在n型元件的输出处获取。 霍尔效应装置可以利用标准方法构建。

公开(公告)号：US20070251292A1

公开(公告)日：2007-11-01

申请号：US11412460

申请日：2006-04-26

申请人： Scott Beck ,  Gilberto Morales

发明人： Scott Beck ,  Gilberto Morales

IPC分类号： G01F25/00

CPC分类号： G01F1/6845 ,  G01F1/6847

摘要： A flip-chip flow sensor has electrical components, such as temperature sensors and a heater, on the top of a substrate and has a channel formed in the bottom of the substrate. The channel is separated from the substrate's top by a membrane of substrate material. A fluid flowing through the channel is separated from a heater, upstream temperature sensor, downstream temperature sensor, bond pads, and wire bonds by the membrane. Heat flows through the membrane easily because the membrane is thin. As such, the electrical elements of the flow sensor, the bond pads and the wires are physically separated from a fluid flowing through the channel but can function properly because they are not thermally isolated.

摘要翻译： 倒装芯片流量传感器在基板的顶部具有诸如温度传感器和加热器的电气部件，并且在基板的底部形成通道。 通道由衬底材料的膜与衬底的顶部分离。 流经通道的流体与加热器，上游温度传感器，下游温度传感器，接合焊盘和膜的引线接合分离。 由于膜薄，热容易流过膜。 因此，流量传感器，接合焊盘和电线的电气元件与流过通道的流体物理分离，但是由于它们不是热隔离的，所以可以正常工作。

公开(公告)号：US07216547B1

公开(公告)日：2007-05-15

申请号：US11328415

申请日：2006-01-06

申请人： Carl E. Stewart ,  Gilberto Morales

发明人： Carl E. Stewart ,  Gilberto Morales

IPC分类号： G01L7/00

CPC分类号： G01L9/0055 ,  G01L9/0042

摘要： A pressure sensor apparatus and method that incorporates a silicon frit bonded cap. The pressure sensor includes a silicon sensor wafer with diaphragms at a bottom surface thereof, a silicon cap wafer mounted on the topside of each sensor wafer, a plurality of silicon sensor die formed on the sensor wafer, a silicon cap wafer etched to create a plurality of reference cavities on the topside of the diaphragm, a thin glass frit to form a wafer-to-wafer bond between the sensor wafer and cap wafer. Sensing devices such as semiconductor die/sensor, peizoresistors, can be used to sense the pressure. The wafer-to-wafer frit bonding improves the output signal drift and the thermal performance of the pressure sensor minimizes the thermal mismatch created by anodic bonded glass wafers.

摘要翻译： 一种压力传感器装置和方法，其包括硅玻璃料接合盖。 压力传感器包括在其底表面上具有隔膜的硅传感器晶片，安装在每个传感器晶片顶部的硅盖晶片，形成在传感器晶片上的多个硅传感器管芯，被蚀刻以形成多个 的薄膜玻璃料，以在传感器晶片和盖子晶片之间形成晶片与晶片的结合。 可以使用诸如半导体管芯/传感器，传感器等感测装置感测压力。 晶圆到晶片的玻璃料粘合改善了输出信号漂移，并且压力传感器的热性能使由阳极粘合玻璃晶片产生的热失配最小化。