公开(公告)号：US07663153B2

公开(公告)日：2010-02-16

申请号：US12011304

申请日：2008-01-25

申请人： Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

发明人： Chen-Yang Huang ,  Hao-Min Ku ,  Shiuh Chao ,  Chu-Li Chao ,  Rong Xuan

IPC分类号： H01L31/00

CPC分类号： H01L33/12 ,  H01L33/10 ,  H01L33/22 ,  H01L33/46 ,  H01L2933/0083

摘要： A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

摘要翻译： 提供了一种发光二极管（LED）。 LED至少包括基板，锯齿多层，第一类型半导体层，有源发射层和第二类型半导体层。 在LED中，通过自动克隆光子晶体工艺，在第一类半导体层下面的有源发射层的相对侧形成锯齿多层。 由于在LED的基板上存在锯齿多层，可以通过锯齿多层的反射和再循环来再次形成有源发射层的背面的散射光。 因此，所有的光被聚焦以向前辐射，以便提高LED的光提取效率。 此外，由于锯齿多层具有释放热应力并且减小其与基板之间的弹性变形的性能，所以锯齿多层不会在任何高温处理之后剥离或破裂。

公开(公告)号：US07602831B2

公开(公告)日：2009-10-13

申请号：US11453100

申请日：2006-06-15

申请人： Rong Xuan ,  Yao-Lin Huang ,  Yu-Chen Yu ,  Yen Chu

发明人： Rong Xuan ,  Yao-Lin Huang ,  Yu-Chen Yu ,  Yen Chu

IPC分类号： H01S3/098 ,  H01S5/00 ,  H01S3/14

CPC分类号： H01S5/1021 ,  H01S5/0654 ,  H01S5/1017 ,  H01S5/1039

摘要： A semiconductor laser device includes a substrate having a first surface and a second surface opposite to the first surface, an active region formed on the second surface of the substrate, a cladding layer formed on the active region, and an insulation region formed in the cladding layer to form on the second surface of the substrate a first laser region having a first size and a second laser region having a second size different from the first size. The first laser region is used for generating a first optical spectrum having a first laser mode channel space. The second laser region is used for generating a second optical spectrum having a second laser mode channel space. A combination of the first optical spectrum and the second optical spectrum forms a single mode laser. Without any gratings, the semiconductor laser device is easy to be fabricated and has a low fabrication cost.

摘要翻译： 一种半导体激光器件，包括具有第一表面和与第一表面相对的第二表面的基板，形成在基板的第二表面上的有源区，形成在有源区上的包覆层，以及形成在该包层中的绝缘区 以在基板的第二表面上形成具有第一尺寸的第一激光区域和具有不同于第一尺寸的第二尺寸的第二激光区域。 第一激光区域用于产生具有第一激光模式通道空间的第一光谱。 第二激光区域用于产生具有第二激光模式通道空间的第二光谱。 第一光谱和第二光谱的组合形成单模激光。 没有任何光栅，半导体激光器件易于制造并且制造成本低。

公开(公告)号：US20090250712A1

公开(公告)日：2009-10-08

申请号：US12436798

申请日：2009-05-07

申请人： Rong Xuan

发明人： Rong Xuan

IPC分类号： H01L33/00

CPC分类号： H01L33/0004 ,  H01L33/48 ,  H01L51/52 ,  H01L51/5237

摘要： A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic material is coupled with the light-emitting structure to produce a magnetic field in the light-emitting structure. The exciting binding energy may be higher than about 25.8 meV at room temperature.

摘要翻译： 提供了一种发光器件，其包括发光结构和磁性材料。 发光结构具有带隙的令人兴奋的结合能。 磁性材料与发光结构耦合以在发光结构中产生磁场。 在室温下，令人兴奋的结合能可能高于约25.8meV。

公开(公告)号：US20090179209A1

公开(公告)日：2009-07-16

申请号：US12117747

申请日：2008-05-09

申请人： Rong Xuan ,  Jenq-Dar Tsay ,  Chih-Hao Hsu

发明人： Rong Xuan ,  Jenq-Dar Tsay ,  Chih-Hao Hsu

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device is provided. In the present invention, a magnetic material is added to the light emitting device to change the current path and the distribution of the current density. As the main distribution of the current density is moved from the area between the electrodes to the area under light-out plane, the emitted light is no longer blocked by the electrodes, such that the light emitting efficiency can be enhanced and the distribution of the current density remains homogeneous.

摘要翻译： 提供了一种发光器件。 在本发明中，将磁性材料添加到发光器件中以改变电流路径和电流密度的分布。 由于电流密度的主要分布从电极之间的区域移动到发光面以下，所以发射的光不再被电极阻挡，从而能够提高发光效率， 电流密度保持均匀。

公开(公告)号：US20120098024A1

公开(公告)日：2012-04-26

申请号：US13339388

申请日：2011-12-29

申请人： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

发明人： Chih-Hao Hsu ,  Rong Xuan ,  Yu-Hsiang Chang ,  Jung-Chun Huang ,  Chun-Ying Chen

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/22 ,  H01L33/40

摘要： A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.

摘要翻译： 提供了包括n型氮化物半导体层，p型氮化物半导体层，发光半导体层，第一金属焊盘，第二金属焊盘和第一磁性材料层的氮化物半导体发光器件。 发光半导体层设置在n型氮化物半导体层和p型氮化物半导体层之间。 第一金属焊盘电连接到n型氮化物半导体层。 第二金属焊盘电连接到p型氮化物半导体层。 第一磁性材料层设置在第一金属焊盘和n型氮化物半导体层之间。 与n型氮化物半导体层的（0001）面平行的第一磁性体层的分布面积大于或等于平行于（0001）面的第一金属焊盘的面积。

公开(公告)号：US20120085987A1

公开(公告)日：2012-04-12

申请号：US12902162

申请日：2010-10-12

申请人： Rong Xuan ,  Po-Chun Liu ,  Ren-Hao Jiang

发明人： Rong Xuan ,  Po-Chun Liu ,  Ren-Hao Jiang

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A light emitting device is provided, which includes a light-emitting structure having an active layer and a magnetic material. The active layer includes at least one quantum well structure, and a thickness of at least one of the quantum well structure is greater than or substantially equal to 1.2 nm at room temperature. The magnetic material is coupled with the light-emitting structure to produce a magnetic field perpendicular to a surface of the active layer in the light-emitting structure.

摘要翻译： 提供一种发光器件，其包括具有有源层和磁性材料的发光结构。 有源层包括至少一个量子阱结构，并且在室温下至少一个量子阱结构的厚度大于或基本上等于1.2nm。 磁性材料与发光结构耦合以产生垂直于发光结构中有源层表面的磁场。

公开(公告)号：US20120012868A1

公开(公告)日：2012-01-19

申请号：US12837513

申请日：2010-07-16

申请人： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

发明人： Hsueh-Chih Chang ,  Rong Xuan ,  Chao-Wei Li ,  Chih-Hao Hsu

IPC分类号： H01L33/52 ,  H01L33/62 ,  H01L33/48

CPC分类号： H01L33/48 ,  H01L25/0753 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting chip package module includes a substrate, a light emitting chip package structure, and a magnetic device. The substrate has a surface. The light emitting chip package structure is disposed on the surface of the substrate. The light emitting chip package structure includes a carrier, a light emitting chip, and a sealant. The light emitting chip is disposed on and electrically connected to the carrier. The sealant is disposed on the carrier and covers the light emitting chip. The magnetic device is disposed next to the light emitting chip package structure to apply a magnetic field to the light emitting chip.

摘要翻译： 发光芯片封装模块包括衬底，发光芯片封装结构和磁性器件。 基板具有表面。 发光芯片封装结构设置在基板的表面上。 发光芯片封装结构包括载体，发光芯片和密封剂。 发光芯片设置在载体上并与其电连接。 密封剂设置在载体上并覆盖发光芯片。 磁性装置设置在发光芯片封装结构的旁边，以向发光芯片施加磁场。

公开(公告)号：US07989818B2

公开(公告)日：2011-08-02

申请号：US12146422

申请日：2008-06-25

申请人： Rong Xuan ,  Chih-Hao Hsu ,  Jenq-Dar Tsay ,  Mu-Tao Chu

发明人： Rong Xuan ,  Chih-Hao Hsu ,  Jenq-Dar Tsay ,  Mu-Tao Chu

IPC分类号： H01L27/15

CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L33/14 ,  H01L33/20 ,  H01L33/22 ,  H01L2224/13 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting device with magnetic field includes a light-emitting structure and a first magnetic-source layer. The light-emitting structure includes a first doped structural layer, a second doped structural layer, an active layer between the two doped structural layers, a first electrode, and a second electrode. The first magnetic-source layer is integrated with the light-emitting structure to produce a magnetic field in the light-emitting structure. The magnetic field transversely shifts a driving current of the light-emitting structure to redistribute in the light-emitting structure.

摘要翻译： 具有磁场的发光器件包括发光结构和第一磁源层。 发光结构包括第一掺杂结构层，第二掺杂结构层，两个掺杂结构层之间的有源层，第一电极和第二电极。 第一磁源层与发光结构集成，以在发光结构中产生磁场。 磁场横向移动发光结构的驱动电流，以在发光结构中重新分布。

公开(公告)号：US07928463B2

公开(公告)日：2011-04-19

申请号：US12436798

申请日：2009-05-07

申请人： Rong Xuan

发明人： Rong Xuan

IPC分类号： H01L33/00

CPC分类号： H01L33/0004 ,  H01L33/48 ,  H01L51/52 ,  H01L51/5237

摘要： A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic material is coupled with the light-emitting structure to produce a magnetic field in the light-emitting structure. The exciting binding energy may be higher than about 25.8 meV at room temperature.

摘要翻译： 提供了一种发光器件，其包括发光结构和磁性材料。 发光结构具有带隙的令人兴奋的结合能。 磁性材料与发光结构耦合以在发光结构中产生磁场。 在室温下，令人兴奋的结合能可能高于约25.8meV。

公开(公告)号：US20100282304A1

公开(公告)日：2010-11-11

申请号：US12273501

申请日：2008-11-18

申请人： Ming-Hsien Wu ,  Wen-Yung Yeh ,  Rong Xuan ,  Wen-Yih Liao ,  Jung-Tsung Hsu ,  Mu-Tao Chu

发明人： Ming-Hsien Wu ,  Wen-Yung Yeh ,  Rong Xuan ,  Wen-Yih Liao ,  Jung-Tsung Hsu ,  Mu-Tao Chu

IPC分类号： H01L31/0256 ,  H01L31/00 ,  H01L31/02 ,  H01L31/18

CPC分类号： H01L31/0693 ,  H01L25/167 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/054 ,  H01L31/056 ,  H01L31/077 ,  H01L31/1852 ,  H01L31/1892 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L2924/0002 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

摘要： A bi-functional photovoltaic device is provided. The bi-functional photovoltaic device includes at least one solar cell and a control device. Each of the solar cell includes a multilayer semiconductor layer of group III-V compound semiconductor, a first electrode disposed on the back of the multilayer semiconductor layer, and a second electrode disposed on the front of the multilayer semiconductor layer. The control device connects with the at least one solar cell in order to control them functioning as solar cell or light emitting diode.

摘要翻译： 提供了一种双功能光伏器件。 双功能光伏器件包括至少一个太阳能电池和控制装置。 所述太阳能电池单元包括III-V族化合物半导体的多层半导体层，配置在所述多层半导体层的背面的第一电极和配置在所述多层半导体层的前方的第二电极。 控制装置与至少一个太阳能电池连接，以便控制它们作为太阳能电池或发光二极管起作用。