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104 条记录 (耗时 0.036 秒)

    LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND SMOOTH SIDEWALL
    21.
    发明申请
    LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND SMOOTH SIDEWALL 审中-公开
    激光切割和等离子体蚀刻用于高切割强度和平滑面

    公开(公告)号：US20150011073A1

    公开(公告)日：2015-01-08

    申请号：US14293227

    申请日：2014-06-02

    申请人： Wei-Sheng Lei ,  Tong Liu ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Aparna Iyer ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Tong Liu ,  Madhava Rao Yalamanchili ,  Brad Eaton ,  Aparna Iyer ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/308

    CPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/67207

    摘要： In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a hybrid plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch with a plasma based on a combination of NF3 and CF4. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation.

    摘要翻译： 在实施例中，实施涉及初始激光划片和随后的等离子体蚀刻的混合晶片或衬底切割工艺用于裸片切割。 激光划片工艺可用于清洁地去除掩模层，有机和无机介电层以及器件层。 然后可以在曝光或部分蚀刻晶片或衬底时终止激光蚀刻工艺。 在实施例中，使用混合等离子体蚀刻方法来对晶片进行骰子，其中采用各向同性蚀刻来改善基于NF 3和CF 4的组合的等离子体的各向异性蚀刻之后的管芯侧壁。 各向同性蚀刻在单片切割之后从各向异性蚀刻的模具侧壁去除各向异性蚀刻副产物，粗糙度和/或扇贝。

    Method of coating water soluble mask for laser scribing and plasma etch
    23.
    发明授权
    Method of coating water soluble mask for laser scribing and plasma etch 有权
    用于激光划线和等离子体蚀刻的水溶性掩模涂层方法

    公开(公告)号：US08859397B2

    公开(公告)日：2014-10-14

    申请号：US13917508

    申请日：2013-06-13

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Todd Egan ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Todd Egan ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/00 ,  H01L21/311 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/78

    CPC分类号： H01L21/82 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/78

    摘要： Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.

    摘要翻译： 使用由第一水溶性薄膜层和第二水溶性层组成的晶片切割的激光划线和等离子体蚀刻的方法。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成混合掩模。 混合掩模由设置在集成电路上的第一水溶性层和设置在第一水溶性层上的第二水溶性层组成。 该方法还包括用激光划线工艺图案化混合掩模，以提供具有间隙的图案化混合掩模，暴露集成电路之间的半导体晶片的区域。 该方法还包括通过图案化混合掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。

    WAFER DICING FROM WAFER BACKSIDE
    24.
    发明申请
    WAFER DICING FROM WAFER BACKSIDE 有权
    WAFER从WAFER BACKSIDE开始

    公开(公告)号：US20140179084A1

    公开(公告)日：2014-06-26

    申请号：US14095824

    申请日：2013-12-03

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/822

    CPC分类号： H01L21/822 ,  B23K26/0624 ,  B23K26/18 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3081 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 例如，一种方法包括将保护带施加到晶片正面，所述晶片具有附接到晶片背面的切割带。 切割胶带从晶片背面去除，以露出设置在晶片背面和切割胶带之间的管芯附着膜。 或者，如果在晶片背面和切割带之间不设置管芯附着膜，则在该操作中将芯片附着膜施加到晶片背面。 将水溶性掩模施加到晶片背面。 在晶片背面进行激光划线，以切割掩模，芯片附着膜和晶片，包括包括在晶片的正面和背面内的所有层。 执行等离子体蚀刻以处理或清洁由激光划线暴露的晶片的表面。 执行晶片背面清洁，并且将第二切割带施​​加到晶片背面。 保护带从晶片正面去除。

    LASER AND PLASMA ETCH WAFER DICING WITH PARTIAL PRE-CURING OF UV RELEASE DICING TAPE FOR FILM FRAME WAFER APPLICATION
    25.
    发明申请
    LASER AND PLASMA ETCH WAFER DICING WITH PARTIAL PRE-CURING OF UV RELEASE DICING TAPE FOR FILM FRAME WAFER APPLICATION 有权
    激光和等离子体蚀刻用于薄膜框架UV膜的紫外线释放带的部分预固化

    公开(公告)号：US20140106542A1

    公开(公告)日：2014-04-17

    申请号：US14052085

    申请日：2013-10-11

    申请人： Mohammad Kamruzzaman CHOWDHURY ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    发明人： Mohammad Kamruzzaman CHOWDHURY ,  Wei-Sheng Lei ,  Todd Egan ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

    IPC分类号： H01L21/82 ,  H01L21/67

    CPC分类号： H01L21/82 ,  H01L21/67207 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68381

    摘要： Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film.

    摘要翻译： 使用UV固化粘合剂膜的激光和等离子体蚀刻晶片切割的方法和系统。 一种方法包括形成覆盖在晶片上形成的IC的掩模。 半导体晶片通过UV固化粘合剂膜耦合到膜框架。 紫外线固化粘合剂膜的预固化固化了延伸超过晶片边缘的粘合剂的周边部分，以改善暴露的粘合材料对等离子体蚀刻的抗性并减少蚀刻室内的烃再沉积。 通过激光划线将掩模图案化以提供具有间隙的图案化掩模。 图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。 通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对IC进行分离。 然后固化可UV固化粘合剂的中心部分，并将分离的IC从膜上分离出来。

    WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH
    29.
    发明申请
    WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH 有权
    使用等离子体蚀刻的混合多步激光切割工艺的抛光

    公开(公告)号：US20130267076A1

    公开(公告)日：2013-10-10

    申请号：US13851442

    申请日：2013-03-27

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78 ,  B23K26/0608 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  H01L21/3086

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 一种方法包括在半导体晶片上形成掩模。 掩模由覆盖和保护集成电路的层组成。 用多步骤激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模。 图案化使得集成电路之间的半导体晶片的区域露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。