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202 条记录 (耗时 0.031 秒)

    Magnetic Element With Storage Layer Materials
    23.
    发明申请
    Magnetic Element With Storage Layer Materials 有权
    磁性元素与存储层材料

    公开(公告)号：US20100176471A1

    公开(公告)日：2010-07-15

    申请号：US12352648

    申请日：2009-01-13

    申请人： Xiaochun Zhu ,  Xia Li ,  Seung H. Kang

    发明人： Xiaochun Zhu ,  Xia Li ,  Seung H. Kang

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L43/12

    摘要： According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers.

    摘要翻译： 根据本发明的实施例，磁性隧道结（MTJ）元件包括参考铁磁层，存储铁磁层和绝缘层。 存储铁磁层包括通过非磁性子层耦合到CoFe子层和/或NiFe子层的CoFeB子层。 绝缘层设置在参考和存储铁磁层之间。

    Non-volatile memory array configurable for high performance and high density
    24.
    发明授权
    Non-volatile memory array configurable for high performance and high density 有权
    非易失性存储器阵列可配置为高性能和高密度

    公开(公告)号：US08587982B2

    公开(公告)日：2013-11-19

    申请号：US13034763

    申请日：2011-02-25

    申请人： Jung Pill Kim ,  Hari M. Rao ,  Xiaochun Zhu ,  Xia Li ,  Seung H. Kang

    发明人： Jung Pill Kim ,  Hari M. Rao ,  Xiaochun Zhu ,  Xia Li ,  Seung H. Kang

    IPC分类号： G11C5/06

    CPC分类号： G11C11/1677 ,  G11C8/08 ,  G11C8/14 ,  G11C11/16 ,  G11C11/161 ,  G11C29/18 ,  G11C29/30 ,  G11C2029/1202 ,  G11C2029/2602 ,  H01L43/12

    摘要： Embodiments include a memory array having a plurality of bit lines and a plurality of source lines disposed in columns. A plurality of word lines is disposed in rows. A plurality of storage elements have a first subset of storage elements electrically decoupled from the memory array and a second subset of storage elements coupled to the memory array. The memory array further includes a plurality of bit cells, each including one storage element from the second subset of storage elements coupled to at least two transistors. The bit cells are coupled to the plurality of bit lines and the plurality source lines. Each transistor is coupled to one word line. The memory array can further include logic to select a high performance mode and a high density mode.

    摘要翻译： 实施例包括具有多个位线和多个排列成列的源极线的存储器阵列。 多行字线被排列成行。 多个存储元件具有与存储器阵列电分离的存储元件的第一子集和耦合到存储器阵列的存储元件的第二子集。 存储器阵列还包括多个位单元，每个位单元包括来自耦合到至少两个晶体管的存储元件的第二子集的一个存储元件。 位单元耦合到多个位线和多个源极线。 每个晶体管耦合到一个字线。 存储器阵列还可以包括选择高性能模式和高密度模式的逻辑。

    Magnetic Tunnel Junction (MTJ) and Methods, and Magnetic Random Access Memory (MRAM) Employing Same
    27.
    发明申请
    Magnetic Tunnel Junction (MTJ) and Methods, and Magnetic Random Access Memory (MRAM) Employing Same 有权
    磁隧道结（MTJ）和方法，以及使用相同的磁性随机存取存储器（MRAM）

    公开(公告)号：US20100258887A1

    公开(公告)日：2010-10-14

    申请号：US12423298

    申请日：2009-04-14

    申请人： Xiaochun Zhu ,  Matthew Nowak ,  Xia Li ,  Seung H. Kang

    发明人： Xiaochun Zhu ,  Matthew Nowak ,  Xia Li ,  Seung H. Kang

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： Magnetic tunnel junctions (MTJs) and methods of forming same are disclosed. A pinned layer is disposed in the MTJ such that a free layer of the MTJ can couple to a drain of an access transistor when provided in a magnetic random access memory (MRAM) bitcell. This structure alters the write current flow direction to align the write current characteristics of the MTJ with write current supply capability of an MRAM bitcell employing the MTJ. As a result, more write current can be provided to switch the MTJ from a parallel (P) to anti-parallel (AP) state. An anti-ferromagnetic material (AFM) layer is provided on the pinned layer to fix pinned layer magnetization. To provide enough area for depositing the AFM layer to secure pinned layer magnetization, a pinned layer having a pinned layer surface area greater than a free layer surface area of the free layer is provided.

    摘要翻译： 公开了磁隧道结（MTJ）及其形成方法。 被钉扎层设置在MTJ中，使得当提供在磁性随机存取存储器（MRAM）位单元中时，MTJ的自由层可以耦合到存取晶体管的漏极。 该结构改变写入电流流动方向，以使MTJ的写入电流特性与使用MTJ的MRAM位单元的写入电流供应能力对准。 结果，可以提供更多的写入电流以将MTJ从并行（P）切换到反并行（AP）状态。 在钉扎层上提供反铁磁材料（AFM）层以固定钉扎层的磁化强度。 为了提供足够的用于沉积AFM层以确保钉扎层磁化的区域，提供了具有大于自由层的自由层表面积的钉扎层表面积的钉扎层。

    Reducing Spin Pumping Induced Damping of a Free Layer of a Memory Device
    28.
    发明申请
    Reducing Spin Pumping Induced Damping of a Free Layer of a Memory Device 有权
    减少旋转泵送引起的存储器件自由层的阻尼

    公开(公告)号：US20100074092A1

    公开(公告)日：2010-03-25

    申请号：US12236956

    申请日：2008-09-24

    申请人： Xiaochun Zhu ,  Seung H. Kang ,  Xia Li

    发明人： Xiaochun Zhu ,  Seung H. Kang ,  Xia Li

    IPC分类号： G11B9/00

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    摘要： A system and method of reducing spin pumping induced damping of a free layer of a memory device is disclosed. The memory device includes an anti-ferromagnetic material (AFM) pinning layer in contact with a bit line access electrode. The memory device also includes a pinned layer in contact with the AFM pinning layer, a tunnel barrier layer in contact with the pinned layer, and a free layer in contact with the tunnel barrier layer. The memory device includes a spin torque enhancing layer in contact with the free layer and in contact with an access transistor electrode. The spin torque enhancing layer is configured to substantially reduce spin pumping induced damping of the free layer.

    摘要翻译： 公开了一种降低自旋泵送诱发的存储器件自由层阻尼的系统和方法。 存储器件包括与位线接入电极接触的反铁磁材料（AFM）钉扎层。 存储器件还包括与AFM钉扎层接触的钉扎层，与钉扎层接触的隧道势垒层和与隧道势垒层接触的自由层。 存储器件包括与自由层接触并与存取晶体管电极接触的自旋转矩增强层。 自旋扭矩增强层被配置为基本上减少自由层的自旋泵送引起的阻尼。

    Method of forming a magnetic tunnel junction structure
    29.
    发明授权
    Method of forming a magnetic tunnel junction structure 有权
    形成磁隧道结结构的方法

    公开(公告)号：US09136463B2

    公开(公告)日：2015-09-15

    申请号：US11943042

    申请日：2007-11-20

    申请人： Xia Li ,  Seung H. Kang ,  Xiaochun Zhu

    发明人： Xia Li ,  Seung H. Kang ,  Xiaochun Zhu

    IPC分类号： H01L21/00 ,  H01L43/12

    CPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08

    摘要： In a particular embodiment, a method is disclosed that includes forming a magnetic tunnel junction (MTJ) structure including a conductive layer on a substrate. The method also includes depositing a sacrificial layer on the conductive layer before depositing a patterning film layer.

    摘要翻译： 在特定实施例中，公开了一种方法，其包括在衬底上形成包括导电层的磁性隧道结（MTJ）结构。 该方法还包括在沉积图案化膜层之前在导电层上沉积牺牲层。