公开(公告)号：US5317169A

公开(公告)日：1994-05-31

申请号：US861633

申请日：1992-04-01

申请人： Tsuyoshi Nakano ,  Shuji Doi ,  Takanobu Noguchi ,  Toshihiro Ohnishi ,  Yasushi Iyechika

发明人： Tsuyoshi Nakano ,  Shuji Doi ,  Takanobu Noguchi ,  Toshihiro Ohnishi ,  Yasushi Iyechika

IPC分类号： C08G61/00 ,  C09K11/06 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H05B33/14 ,  H01L29/28

CPC分类号： H05B33/14 ,  C08G61/00 ,  C09K11/06 ,  H01L51/0038 ,  H01L51/5012 ,  H01L51/005 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/5048 ,  H01L51/5088

摘要： Disclosed is an organic electroluminescence device having a light emitting layer or a light emitting layer and a charge transport layer disposed between a pair of electrodes at least one of which is transparent or semi-transparent, the light emitting layer comprising a conjugated polymer having a repeating unit represented by the general formula (1):--Ar.sub.1 --CH.dbd.CH-- (1)where Ar.sub.1 represents an aromatic hydrocarbon group having 6 to 14 carbon atoms or a nuclear-substituted group in which the aromatic hydrocarbon group is substituted by one or two selected from the group consisting of hydrocarbon groups having 1 to 22 carbon atoms and alkoxy groups having 1 to 22 carbon atoms. According to the present invention, the use of a polymer intermediate of the conjugated polymer or the conjugated polymer soluble to a solvent as a light emitting material, a charge transport material or a buffer layer to an electrode enables an EL device having a large area to be easily made.

摘要翻译： 公开了一种有机电致发光器件，其具有发光层或发光层和电荷传输层，电荷输送层设置在至少一个透明或半透明的一对电极之间，发光层包含具有重复的共轭聚合物 由通式（1）表示的单元：-Ar1-CH = CH-（1）其中Ar1表示具有6至14个碳原子的芳族烃基或其中芳族烃基被一个或者多个碳原子取代的核取代基 两个选自由具有1至22个碳原子的烃基和具有1至22个碳原子的烷氧基组成的组。 根据本发明，共轭聚合物或可溶于溶剂的共轭聚合物的聚合物中间体作为发光材料，电荷输送材料或缓冲层到电极的使用使得能够将具有大面积的EL器件 容易制作

公开(公告)号：US06946308B2

公开(公告)日：2005-09-20

申请号：US10396565

申请日：2003-03-26

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yasushi Iyechika

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yasushi Iyechika

IPC分类号： C30B29/38 ,  C30B25/02 ,  H01L21/205 ,  H01L29/201 ,  H01L33/32 ,  H01L21/00 ,  H01L33/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.

摘要翻译： 当形成III-V族氮化物化合物半导体的晶体层时，首先将氮化物化合物半导体层重叠在基板上以形成基底层，并且由通式In x x表示的III-V族氮化物化合物半导体 （其中0≤x≤1,0<= y <=1,0,0≤z≤1，x + y + z = 1）在不低于800托的沉积压力下通过氢化物气相外延在基底层上外延生长。 通过使沉积压力不低于800托，III-V族氮化物化合物半导体的结晶度可以显着提高，并且其缺陷密度降低。

公开(公告)号：US08277893B2

公开(公告)日：2012-10-02

申请号：US12497428

申请日：2009-07-02

申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： C23C16/06

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

公开(公告)号：US20070051316A1

公开(公告)日：2007-03-08

申请号：US11514927

申请日：2006-09-05

申请人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

发明人： Tatsuya Ohori ,  Kazushige Shiina ,  Yasushi Iyechika ,  Noboru Suda ,  Yukichi Takamatsu ,  Yoshiyasu Ishihama ,  Takeo Yoneyama ,  Yoshinao Komiya

IPC分类号： C23C16/00

CPC分类号： C23C16/4581 ,  C23C16/481

摘要： A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

摘要翻译： 一种化学气相沉积设备，包括用于在其上安装基板的基座，用于加热基板的加热器，进料气体引入部分和反应气体排出部分，其中通过支撑构件保持或增强的透光陶瓷板是 设置在加热器和基板的安装位置之间。 能够长时间稳定地形成膜而不会对半导体膜的质量产生负面影响的化学气相沉积装置，即使在使用具有高温腐蚀性气体的化学气相沉积反应的情况下，用于制造氮化镓 化合物半导体等。

公开(公告)号：US06844574B1

公开(公告)日：2005-01-18

申请号：US09522707

申请日：2000-03-10

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Takayoshi Maeda ,  Yasushi Iyechika

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Takayoshi Maeda ,  Yasushi Iyechika

IPC分类号： H01L21/205 ,  H01L33/00 ,  H01L33/02 ,  H01S5/323 ,  H01L29/04

CPC分类号： H01L33/025 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075 ,  H01S5/32341

摘要： Provided is a III-V compound semiconductor having a layer formed from a first III-V compound semiconductor expressed by the general formula InuGavAlwN (where 0≦u≦1, 0≦v≦1, 0≦w≦1, u+v+w=1), a pattern formed on the layer from a material different not only from the first III-V compound semiconductor but also from a second III-V compound semiconductor hereinafter described, and a layer formed on the first III-V compound semiconductor and the pattern from the second III-V compound semiconductor expressed by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦x≦1, x+y+z=1), wherein the full width at half maximum of the (0004) reflection X-ray rocking curve of the second III-V compound semiconductor is 700 seconds or less regardless of the direction of X-ray incidence. In the III-V compound semiconductor, which is a high quality semiconductor, the occurrence of low angle grain boundaries is suppressed.

摘要翻译： 提供了具有由通式InuGavAlwN表示的第一III-V族化合物半导体形成的层的III-V族化合物半导体（其中0≤u≤1,0<=v≤1,0<= w < 1，u + v + w =​​ 1），从不同于第一III-V族化合物半导体的材料形成在该层上的图案，以及由下文所述的第二III-V族化合物半导体形成的层 第一III-V族化合物半导体和由通式InxGayAlzN表示的第二III-V族化合物半导体的图案（其中0 <= x <= 1,0 <= y <=1,0,0≤x≤1，x + y + z = 1），其中，与X射线入射方向无关地，第二III-V族化合物半导体的（0004）反射X射线摇摆曲线的半峰全宽为700秒以下。 在作为高质量半导体的III-V族化合物半导体中，抑制了低角度晶界的发生。

公开(公告)号：US06756246B2

公开(公告)日：2004-06-29

申请号：US10105238

申请日：2002-03-26

申请人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yasushi Iyechika

发明人： Kazumasa Hiramatsu ,  Hideto Miyake ,  Shinya Bohyama ,  Takayoshi Maeda ,  Yasushi Iyechika

IPC分类号： H01L21302

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The method uses a mixed carrier gas of hydrogen gas and nitrogen gas to control formation of a facet group including at least the {33-62} facet by the regrowth, and conducting the regrowth until a plane parallel to the surface of the first III-V Group compound semiconductor layer is once annihilated, thereby fabricating a III-V Group compound semiconductor having low dislocation density.

摘要翻译： 提供一种用于制造GaN基III-V族化合物半导体的方法，其利用基于HVPE方法的再生方法在第一III-V族化合物半导体上形成具有平坦表面的第二III-V族化合物半导体层 层形成有掩模层。 该方法使用氢气和氮气的混合载气来控制由再生长至少包括{33-62}面的小面的形成，并进行再生长，直到平行于第一III- V族化合物半导体层一旦被消除，从而制造具有低位错密度的III-V族化合物半导体。

公开(公告)号：US5587014A

公开(公告)日：1996-12-24

申请号：US360427

申请日：1994-12-21

申请人： Yasushi Iyechika ,  Tomoyuki Takada

发明人： Yasushi Iyechika ,  Tomoyuki Takada

IPC分类号： C30B25/02 ,  G30B25/14

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406

摘要： There is provided a method for manufacturing group III-V compound semiconductors including at least Ga as the group III element and at least N as the group V element by using metal-organic compounds of group III elements having at least Ga in the molecules thereof and compounds having at least N in the molecules thereof as the raw materials, and the group III-V compound semiconductor crystals are grown in a reaction tube, and epitaxial layer of crystals are grown on a substrate made of a material different from that of the crystals to be grown, wherein at least one kind of gas, selected from a group consisting of compounds including halogen elements and group V elements and hydrogen halide, is introduced before the growth of the compound semiconductor crystal begins, thereby to carry out gas-phase etching of the inner wall surface of a reaction tube. Epitaxial crystals having good crystallinity and surface morphology can be obtained with good reproducibility without impairing the productivity and stability of the product property.

摘要翻译： 提供了通过使用在其分子中具有至少Ga的III族元素的金属有机化合物和III族元素至少包含Ga作为第III族元素并且至少N为V族元素的方法， 在其分子中具有至少N的化合物作为原料，并且III-V族化合物半导体晶体在反应管中生长，并且晶体外延层生长在由不同于晶体的材料制成的衬底上 生长，其中在化合物半导体晶体生长开始之前引入选自包括卤素元素和第V族元素的化合物和卤化氢的至少一种气体，从而进行气相蚀刻 的反应管的内壁表面。 可以以良好的再现性获得具有良好结晶度和表面形态的外延晶体，而不损害产品性能的生产率和稳定性。