Abstract:
According to example embodiments, a reflective film includes a plurality of first concave-convex elements having a curved surface and a plurality of second concave-convex elements on the curved surface. The second concave-convex elements may be a smaller scale than a scale of the plurality of first concave-convex elements. The reflective structure may further include a color purity control element configured to reduce degradation of a color purity expressed by the reflective film. The color purity control element may be configured such that at least a complementary light with respect to a color light reflected by the reflective film travels in the same direction as the reflected color light.
Abstract:
An organic semiconductor device includes an organic semiconductor, an electrode electrically connected to the organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.
Abstract:
A pixel circuit includes a first transistor that supplies a data signal to a first node in response to a scan signal. The pixel circuit may also include a capacitor that is connected between the first node and a ground voltage and a detecting unit that is connected in parallel with the capacitor. More so, the detecting unit may change a voltage of the first node by being activated in response to a mode signal. Also, the detecting unit may have resistance that varies according to an external stimulus. The pixel circuit may also include a second transistor that is complementarily activated with respect to the detecting unit in response to the mode signal, and that provides a voltage of the first node.
Abstract:
In a transistor and a method of manufacturing the same, the transistor includes a channel layer arranged on a substrate, a source electrode and a drain electrode formed on the substrate so as to contact respective ends of the channel layer, a gate insulating layer surrounding the channel layer between the source electrode and the drain electrode, and a gate electrode surrounding the gate insulating layer.
Abstract:
A field emission display device and a field emission type backlight device having a sealing structure for a vacuum exhaust are provided. The field emission display device is constructed with a cathode substrate and an anode substrate attached to each other and facing each other and a vacuum-exhausted panel space formed therebetween to generated a visual image. Also, the field emission display device is constructed with a sealing member disposed along edges of the cathode substrate and the anode substrate to seal the panel space. At least one inlet exposed to the panel space and an exhaust passage through which the inlet communicates with an outside of the field emission display device are formed in the sealing member. The field emission display device and the field emission type backlight device according to the present invention has a reduced number of manufacturing processes and is suitable for a compact, slim and lightweight design, and a large screen by having the sealing structure for the vacuum exhaust.
Abstract:
A transfer film includes an organic film that can be removed using a solvent and a metal film formed on the organic film. The metal film is formed by: preparing a first substrate; forming a transfer film by stacking an organic film and a metal film on the first substrate; separating the transfer film from the first substrate; bonding the transfer film separated from the first substrate to a second substrate by arranging the metal film to face the second substrate; and removing the organic film from the metal film using a solvent.
Abstract:
A display device includes: a first substrate and a second substrate, a plurality of first electrodes, a light emitting layer, and a plurality of second electrodes. The first and second substrates are spaced apart to face each other, and the plurality of first electrodes are formed on an inner surface of the first substrate. The light emitting layer is arranged on the plurality of first electrodes and includes phosphor bodies and light emitting sources mixed therein. The plurality of second electrodes are arranged on an inner surface of the second substrate.
Abstract:
A field emission device and a field emission display (FED) using the same and a method of making the field emission device. The FED includes a glass substrate, a layer of a material formed on the glass substrate and having a concave portion, a cathode electrode formed on the material layer and also having a concave portion, electron emitters formed on the concave portion of the cathode electrode, a gate insulating layer formed on the cathode electrode and having a cavity communicating with the concave portion, and a gate electrode formed on the gate insulating layer and having a gate aperture aligned with the cavity.
Abstract:
A nanowire electromechanical switching device is constructed with a source electrode and a drain electrode disposed on an insulating substrate and spaced apart from each other, a first nanowire vertically grown on the source electrode and to which a V1 voltage is applied, a second nanowire vertically grown on the drain electrode and to which a V2 voltage having an opposite polarity to that of the V1 voltage is applied, and a gate electrode spaced apart from the second nanowire, partially surrounding the second nanowire and having an opening that faces the first nanowire in order to avoid disturbing a mutual switching operation of the first nanowire and the second nanowire and to which a V3 voltage having the same polarity as that of the V2 voltage is applied.
Abstract:
A nanowire electronmechanical device with an improved structure and a method of fabricating the same prevent burning of two nanowires which are switched due to contact with each other while providing stable on-off switching characteristics. The nanowire electromechanical device comprises: an insulating substrate; first and third electrodes spaced apart from each other on the insulating substrate, wherein a negative voltage and a positive voltage, varying within a predetermined range, are applied to the first and third electrodes, respectively; a second electrode interposed between the first and third electrodes, a constant positive voltage, lower than the voltage applied to the third electrode, being applied to the second electrode; a first nanowire vertically grown on the first electrode and charged with a negative charge; a second nanowire vertically grown on the second electrode and charged with a positive charge; and a third nanowire vertically grown on the third electrode and charged with an amount of positive charge corresponding to the magnitude of the varying voltage applied to the third electrode.