公开(公告)号：US5948205A

公开(公告)日：1999-09-07

申请号：US897570

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。

公开(公告)号：US5653623A

公开(公告)日：1997-08-05

申请号：US357176

申请日：1994-12-13

申请人： Norio Kimura ,  Seiji Ishikawa ,  Masako Kodera ,  Atsushi Shigeta ,  Riichirou Aoki

发明人： Norio Kimura ,  Seiji Ishikawa ,  Masako Kodera ,  Atsushi Shigeta ,  Riichirou Aoki

IPC分类号： B24B53/007 ,  B24B53/017 ,  B24B7/04 ,  B24B29/02

CPC分类号： B24B53/017

摘要： A polishing apparatus for polishing a surface of a workpiece such as a semiconductor wafer is installed in a clean room. The polishing apparatus includes a polishing section having a turntable with an abrasive cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, a loading section for loading the workpiece to be polished onto the top ring, and an unloading section for unloading the workpiece which has been polished from the top ring. A cover covers an entire area of movement of the top ring including the polishing section, the loading section and the unloading section. An exhaust duct discharges air of an interior space of the cover to an outside of an installation space of the polishing apparatus.

摘要翻译： 用于抛光诸如半导体晶片的工件的表面的抛光装置安装在洁净室中。 抛光装置包括具有安装在其上表面上的研磨布的转台的抛光部分，用于支撑待抛光工件的顶环，并将工件压靠在研磨布上，用于将待抛光工件加载的装载部分 以及用于卸载已经从顶环抛光的工件的卸载部分。 盖子覆盖包括抛光部分，装载部分和卸载部分在内的顶环的整个运动区域。 排气管将盖的内部空间的空气排出到抛光装置的安装空间的外部。

公开(公告)号：US5489336A

公开(公告)日：1996-02-06

申请号：US329651

申请日：1994-10-25

申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05C3/00

CPC分类号： H01L21/67103

摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

公开(公告)号：US5398459A

公开(公告)日：1995-03-21

申请号：US156641

申请日：1993-11-24

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

IPC分类号： B24B37/10 ,  B24B37/30 ,  B24B1/00

CPC分类号： B24B37/102 ,  B24B37/30

摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.

摘要翻译： 诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。 顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。 转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动 使工件相对于保持环中的顶环执行行星运动。

公开(公告)号：US5395645A

公开(公告)日：1995-03-07

申请号：US928070

申请日：1992-08-11

申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05D1/00

CPC分类号： H01L21/67103

摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

公开(公告)号：US06419557B2

公开(公告)日：2002-07-16

申请号：US09834730

申请日：2001-04-16

申请人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

发明人： Haruki Nojo ,  Rempei Nakata ,  Masako Kodera ,  Nobuo Hayasaka

IPC分类号： B24B100

CPC分类号： C09G1/02 ,  H01L21/31053

摘要： A polishing method including applying a polishing agent containing polishing grains and a surfactant onto an oxide film, which is formed on a substrate having a depressed portion and a protruding portion, wherein the surfactant is an organic compound including at least one hydrophilic group selected from the group consisting of COOH, COOM1, wherein M1 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a carboxyl group, SO3H and SO3M2, wherein M2 represents an atom or a functional group which can form a salt when substituted for a hydrogen atom of a sulfo group; and polishing the film until the film is flattened without the occurrence of dishing.

摘要翻译： 一种抛光方法，包括将含有抛光颗粒和表面活性剂的抛光剂施加到形成在具有凹陷部分和突出部分的基底上的氧化物膜上，其中所述表面活性剂是包含至少一种选自以下的亲水基团的有机化合物： 由COOH，COOM1组成的基团，其中M1表示当取代羧基的SO3H和SO3M2的氢原子时可以形成盐的原子或官能团，其中M2表示可以形成盐的原子或官能团 当取代磺基的氢原子时; 并抛光膜，直到膜变平而不发生凹陷。

公开(公告)号：US5914275A

公开(公告)日：1999-06-22

申请号：US897324

申请日：1997-07-21

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

公开(公告)号：US5830041A

公开(公告)日：1998-11-03

申请号：US743361

申请日：1996-11-04

申请人： Tamami Takahashi ,  Fumihiko Sakata ,  Norio Kimura ,  Masako Kodera ,  Atsushi Shigeta

发明人： Tamami Takahashi ,  Fumihiko Sakata ,  Norio Kimura ,  Masako Kodera ,  Atsushi Shigeta

IPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/16 ,  B24B7/22

CPC分类号： B24B37/013 ,  B24B49/16

摘要： A method and apparatus for determining a planar end point on a workpiece such as a semiconductor wafer in a polishing process for polishing the workpiece to a flat mirror finish. The workpiece having an uneven surface is held by a top ring and pressed against a polishing platen. The workpiece is moved relative to the polishing platen to polish the workpiece, and a change in a frictional force between the workpiece and the polishing platen is detected. A reference time when the workpiece having an uneven surface is polished to a flat surface is determined based on the change of the frictional force between the workpiece and the polishing platen. The time when a certain period of polishing time from the reference time elapses is determined as an endpoint on the workpiece.

摘要翻译： 一种用于在用于将工件抛光到平面镜面抛光的抛光工艺中确定诸如半导体晶片的工件上的平面终点的方法和装置。 具有不平坦表面的工件由顶环保持并压靠在研磨台板上。 工件相对于研磨台板移动以抛光工件，并且检测到工件和抛光台板之间的摩擦力的变化。 基于工件和研磨台板之间的摩擦力的变化，确定具有不平坦表面的工件被抛光到平坦表面的参考时间。 从参考时间经过一定时间的抛光时间经过的时间被确定为工件上的端点。

公开(公告)号：US5578531A

公开(公告)日：1996-11-26

申请号：US547581

申请日：1995-10-24

申请人： Masako Kodera ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Masako Kodera ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L21/31053 ,  H01L21/76819 ,  Y10S438/97

摘要： First through fourth wiring layers are formed on the surface of a silicon substrate, then a silicon oxide layer containing fluorine is deposited over the wiring layers and the silicon substrate, and then another silicon oxide layer containing no fluorine is deposited over the silicon oxide layer containing fluorine. Subsequently, the silicon oxide layer containing no fluorine is flattened by polishing it for a predetermined length of time when the silicon oxide layer containing no fluorine is polished, the silicon oxide layer containing fluorine serves as a stopper, since the polishing rate of the silicon oxide layer containing fluorine is lower than that of the silicon oxide layer containing no fluorine.

摘要翻译： 在硅衬底的表面上形成第一到第四布线层，然后在布线层和硅衬底上沉积含氟的氧化硅层，然后在不含氟的氧化硅层上沉积含有氟的氧化硅层， 氟。 随后，当不含氟的氧化硅层被研磨时，将不含氟的氧化硅层经过研磨而平坦化预定的时间长度，由于氧化硅的研磨速度， 含氟的层比不含氟的氧化硅层低。

公开(公告)号：US5445996A

公开(公告)日：1995-08-29

申请号：US66375

申请日：1993-05-25

申请人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

发明人： Masako Kodera ,  Hiroyuki Yano ,  Atsushi Shigeta ,  Riichirou Aoki ,  Hiromi Yajima ,  Haruo Okano

IPC分类号： B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/14 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/768 ,  H01L21/302 ,  H01L21/463

CPC分类号： B24B37/013 ,  B24B37/04 ,  B24B49/00 ,  B24B49/02 ,  B24B49/04 ,  B24B49/16 ,  C09K3/1463 ,  H01L21/31051 ,  H01L21/31053 ,  H01L21/76819 ,  H01L22/26 ,  H01L2924/0002

摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

摘要翻译： 为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。 使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。 此外，以增强的抛光速率对绝缘膜进行抛光。