公开(公告)号：US5489336A

公开(公告)日：1996-02-06

申请号：US329651

申请日：1994-10-25

申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05C3/00

CPC分类号： H01L21/67103

摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

公开(公告)号：US5395645A

公开(公告)日：1995-03-07

申请号：US928070

申请日：1992-08-11

申请人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

发明人： Masako Kodera ,  Masami Watase ,  Shiro Mishima ,  Katsuya Okumura

IPC分类号： C01B33/12 ,  H01L21/00 ,  H01L21/316 ,  B05D1/00

CPC分类号： H01L21/67103

摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.

摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。

公开(公告)号：US08614510B2

公开(公告)日：2013-12-24

申请号：US12726604

申请日：2010-03-18

申请人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

发明人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。

公开(公告)号：US20100237501A1

公开(公告)日：2010-09-23

申请号：US12726604

申请日：2010-03-18

申请人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

发明人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。

公开(公告)号：US5846335A

公开(公告)日：1998-12-08

申请号：US844903

申请日：1997-04-22

申请人： Toshiro Maekawa ,  Koji Ono ,  Motoaki Okada ,  Tamami Takahashi ,  Shiro Mishima ,  Masako Kodera ,  Atsushi Shigeta ,  Riichiro Aoki ,  Gisuke Kouno

发明人： Toshiro Maekawa ,  Koji Ono ,  Motoaki Okada ,  Tamami Takahashi ,  Shiro Mishima ,  Masako Kodera ,  Atsushi Shigeta ,  Riichiro Aoki ,  Gisuke Kouno

IPC分类号： B08B1/00 ,  B08B1/04 ,  B08B3/08 ,  B24B37/34 ,  B24D3/32 ,  H01L21/00 ,  H01L21/306 ,  B08B1/02 ,  B08B3/04 ,  B08B7/04

CPC分类号： H01L21/02046 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  B24B37/345 ,  B24D3/32 ,  H01L21/02052 ,  H01L21/67046 ,  Y10S134/902

摘要： A semiconductor cleaning method includes scrubbing a semiconductor wafer using a cleaning member made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores have an average diameter ranging from 10 to 200 .mu.m. The cleaning member may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. By this scrubbing step, particles that are strongly attached to the surface of a substrate such as the semiconductor wafer can easily be removed. During cleaning of the substrate, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.

摘要翻译： 半导体清洁方法包括使用主要由聚氨酯制成并且在与半导体晶片接触的表面中具有微孔的清洁部件来擦洗半导体晶片。 微孔的平均直径为10〜200μm。 清洁构件可以由聚氨酯泡沫或由聚氨酯树脂粘合在一起的纤维组成的无纺织物制成。 通过该洗涤步骤，可以容易地除去强烈附着到诸如半导体晶片的基板的表面的颗粒。 在清洁基板期间，可以刮掉诸如半导体晶片的基板的表面上的表面不规则和晶体突起，以将半导体晶片的表面粗糙度调整到期望的程度，以使半导体晶片表面平坦。

公开(公告)号：US5695601A

公开(公告)日：1997-12-09

申请号：US578894

申请日：1995-12-27

申请人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

发明人： Masako Kodera ,  Atsushi Shigeta ,  Shiro Mishima ,  Hiromi Yajima ,  Riichirou Aoki

IPC分类号： B24B37/04 ,  B24B49/12 ,  H01L21/66 ,  H01L21/306

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/12 ,  H01L22/20

摘要： A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.

摘要翻译： 在CMP单元上抛光形成在晶片上的膜。 此后，粘附到晶片保持器上的晶片移动到光学传感器上方的部分。 用例如可见光辐射晶片的表面，从而测量已经被抛光的膜的厚度。 控制单元自动设置抛光时间，用于在随后抛光的晶片上抛光膜。

公开(公告)号：US5616063A

公开(公告)日：1997-04-01

申请号：US309193

申请日：1994-09-20

申请人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

发明人： Katsuya Okumura ,  Riichirou Aoki ,  Hiromi Yajima ,  Masako Kodera ,  Shirou Mishima ,  Atsushi Shigeta ,  Masayoshi Hirose ,  Norio Kimura ,  Seiji Ishikawa

IPC分类号： H01L21/302 ,  B08B1/04 ,  B24B27/00 ,  B24B37/04 ,  B24B37/34 ,  B24B51/00 ,  B24B55/12 ,  H01L21/00 ,  H01L21/677 ,  B24B49/00

CPC分类号： H01L21/67167 ,  B08B1/04 ,  B08B13/00 ,  B24B27/0023 ,  B24B37/04 ,  B24B37/345 ,  B24B51/00 ,  B24B55/12 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67161 ,  H01L21/67219 ,  H01L21/67745

摘要： A polishing apparatus is a cluster type of apparatus having a plurality of units which perform various operations. The polishing apparatus includes a universal transfer robot having at least one arm for transferring a workpiece, a plurality of units disposed around the universal transfer robot and including a loading unit for receiving the workpiece to be polished, at least one polishing unit for polishing the workpiece, at least one washing unit for washing the workpiece which has been polished and an unloading unit for receiving the cleaned workpiece. Discrete mechanisms respectively transfer a clean workpiece and a dirty workpiece amongst the units.

摘要翻译： 抛光装置是具有执行各种操作的多个单元的集群类型的装置。 抛光装置包括具有用于传送工件的至少一个臂的通用传送机器人，设置在通用传送机器人周围的多个单元，并且包括用于接收被抛光工件的装载单元，用于抛光工件的至少一个抛光单元 至少一个用于清洗已经被抛光的工件的洗涤单元和用于接收清洁的工件的卸载单元。 离散机构分别在单元之间传送清洁的工件和脏工件。

公开(公告)号：US5398459A

公开(公告)日：1995-03-21

申请号：US156641

申请日：1993-11-24

申请人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

发明人： Katsuya Okumura ,  Tohru Watanabe ,  Riichirou Aoki ,  Hiroyuki Yano ,  Masako Kodera ,  Atsushi Shigeta ,  You Ishii ,  Norio Kimura ,  Masayoshi Hirose ,  Yukio Ikeda

IPC分类号： B24B37/10 ,  B24B37/30 ,  B24B1/00

CPC分类号： B24B37/102 ,  B24B37/30

摘要： A workpiece such as a semiconductor wafer is positioned between a turntable and a top ring and polished by an abrasive cloth on the turntable while the top ring is being pressed against the turntable. The top ring has a retaining ring for preventing the workpiece from deviating from the lower surface of the top ring, and the retaining ring has an inside diameter larger than an outside diameter of the workpiece. The rotation of the turntable imparts a pressing force in a direction parallel to the upper surface of the turntable to the workpiece so that an outer periphery of the workpiece contacts an inner periphery of the retaining ring, and the rotation of the retaining ring imparts a rotational force to the workpiece so that the workpiece performs a planetary motion relative to the top ring in the retaining ring.

摘要翻译： 诸如半导体晶片的工件位于转盘和顶环之间，并且当顶环被压靠在转盘上时，其通过研磨布在转盘上抛光。 顶环具有用于防止工件偏离顶环的下表面的保持环，并且保持环的内径大于工件的外径。 转台的转动使平台于转台上表面的方向向工件施加压力，使得工件的外周与保持环的内周接触，并且保持环的旋转赋予转动 使工件相对于保持环中的顶环执行行星运动。

公开(公告)号：US5278104A

公开(公告)日：1994-01-11

申请号：US870240

申请日：1992-04-20

申请人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

发明人： Masako Kodera ,  Tohru Watanabe ,  Katsuya Okumura

IPC分类号： H01L21/673 ,  H01L21/68 ,  H01L21/306

CPC分类号： H01L21/67326 ,  H01L21/67386 ,  Y10S134/902 ,  Y10S414/135

摘要： A semiconductor device support carrier used for a liquid phase process of a semiconductor device with a process liquid is disclosed. The semiconductor device support carrier comprises a support frame supporting the semiconductor device, and a dust protection plate mounted on the support frame and positioned above the semiconductor device. When the semiconductor device support carrier is drawn up from the process liquid, dust in the process liquid is pushed aside and out of the semiconductor device by the dust protection plate.

摘要翻译： 公开了一种用于具有工艺液体的半导体器件的液相工艺的半导体器件支撑载体。 半导体器件支撑载体包括支撑半导体器件的支撑框架和安装在支撑框架上并位于半导体器件上方的防尘板。 当半导体器件支撑载体从处理液体中拉出时，处理液中的灰尘被防尘板推到半导体器件外面。

公开(公告)号：US20130115774A1

公开(公告)日：2013-05-09

申请号：US13422969

申请日：2012-03-16

申请人： Masako Kodera ,  Yukiteru Matsui

发明人： Masako Kodera ,  Yukiteru Matsui

IPC分类号： H01L21/3105 ,  C23F1/08 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/31055 ,  H01L21/67011

摘要： According to one embodiment, a method for chemical planarization includes: preparing a treatment liquid containing a hydrosilicofluoric acid aqueous solution containing silicon dioxide dissolved therein at a saturated concentration; and decreasing height of irregularity of a silicon dioxide film. In the decreasing, dissolution rate of convex portions is made larger than dissolution rate of concave portion of the irregularity while changing equilibrium state of the treatment liquid at areas being in contact with the convex portions of the irregularity, in a state in which the silicon dioxide film having the irregularity is brought into contact with the treatment liquid.

摘要翻译： 根据一个实施方案，化学平面化方法包括：以饱和浓度制备含有溶解有二氧化硅的氢硅氟酸水溶液的处理液; 并降低二氧化硅膜的不规则高度。 在使二氧化硅的状态下，使凹凸部的溶解率降低，使得在不规则的凸部接触的区域改变处理液的平衡状态，使凸部的溶解率大于凹凸部的凹部的溶解率 使具有不规则性的膜与处理液接触。