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公开(公告)号：US5489336A
公开(公告)日：1996-02-06
申请号：US329651
申请日：1994-10-25
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05C3/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。
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公开(公告)号：US5395645A
公开(公告)日：1995-03-07
申请号：US928070
申请日：1992-08-11
申请人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
发明人： Masako Kodera , Masami Watase , Shiro Mishima , Katsuya Okumura
IPC分类号： C01B33/12 , H01L21/00 , H01L21/316 , B05D1/00
CPC分类号： H01L21/67103
摘要： Disclosed is a method of forming a silicon oxide film on a silicon wafer, comprises the steps of keeping a supersaturated hydrofluoric acid solution of silicon oxide on the surface of a silicon wafer in a thickness of not more than 20 mm, the solution having a predetermined temperature, heating the supersaturated solution until the solution reaches a thermal equilibrium, and maintaining for a predetermined period of time the temperature at which a thermal equilibrium is established in the supersaturated solution so as to form a silicon oxide film on the surface of the silicon wafer.
摘要翻译： 公开了一种在硅晶片上形成氧化硅膜的方法，包括以下步骤：在硅晶片的表面上将氧化硅的过饱和氢氟酸溶液保持在不超过20毫米的厚度，该溶液具有预定的 温度，加热过饱和溶液直到溶液达到热平衡，并且在预定时间内保持在过饱和溶液中建立热平衡的温度，以便在硅晶片的表面上形成氧化硅膜 。
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公开(公告)号：US08614510B2
公开(公告)日：2013-12-24
申请号：US12726604
申请日：2010-03-18
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/76832 , H01L21/76849 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。
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公开(公告)号：US20100237501A1
公开(公告)日：2010-09-23
申请号：US12726604
申请日：2010-03-18
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76826 , H01L21/3105 , H01L21/76832 , H01L21/76849 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.
摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。
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公开(公告)号：US5846335A
公开(公告)日：1998-12-08
申请号：US844903
申请日：1997-04-22
申请人： Toshiro Maekawa , Koji Ono , Motoaki Okada , Tamami Takahashi , Shiro Mishima , Masako Kodera , Atsushi Shigeta , Riichiro Aoki , Gisuke Kouno
发明人： Toshiro Maekawa , Koji Ono , Motoaki Okada , Tamami Takahashi , Shiro Mishima , Masako Kodera , Atsushi Shigeta , Riichiro Aoki , Gisuke Kouno
IPC分类号： B08B1/00 , B08B1/04 , B08B3/08 , B24B37/34 , B24D3/32 , H01L21/00 , H01L21/306 , B08B1/02 , B08B3/04 , B08B7/04
CPC分类号： H01L21/02046 , B08B1/007 , B08B1/04 , B08B3/08 , B24B37/345 , B24D3/32 , H01L21/02052 , H01L21/67046 , Y10S134/902
摘要： A semiconductor cleaning method includes scrubbing a semiconductor wafer using a cleaning member made primarily of polyurethane and having micropores in a surface contacting the semiconductor wafer. The micropores have an average diameter ranging from 10 to 200 .mu.m. The cleaning member may be made of either polyurethane foam or non-woven fabric composed of fibers bound together by urethane resin. By this scrubbing step, particles that are strongly attached to the surface of a substrate such as the semiconductor wafer can easily be removed. During cleaning of the substrate, surface irregularities and crystalline protrusions on the surface of a substrate such as a semiconductor wafer can be scraped off to adjust the surface roughness of the semiconductor wafer to a desired degree for making the semiconductor wafer surface flat.
摘要翻译： 半导体清洁方法包括使用主要由聚氨酯制成并且在与半导体晶片接触的表面中具有微孔的清洁部件来擦洗半导体晶片。 微孔的平均直径为10〜200μm。 清洁构件可以由聚氨酯泡沫或由聚氨酯树脂粘合在一起的纤维组成的无纺织物制成。 通过该洗涤步骤，可以容易地除去强烈附着到诸如半导体晶片的基板的表面的颗粒。 在清洁基板期间，可以刮掉诸如半导体晶片的基板的表面上的表面不规则和晶体突起，以将半导体晶片的表面粗糙度调整到期望的程度，以使半导体晶片表面平坦。
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6.发明授权Method for planarizing a semiconductor body by CMP method and an apparatus for manufacturing a semiconductor device using the method 失效通过CMP方法平面化半导体本体的方法和使用该方法制造半导体器件的装置
公开(公告)号：US5695601A
公开(公告)日：1997-12-09
申请号：US578894
申请日：1995-12-27
申请人： Masako Kodera , Atsushi Shigeta , Shiro Mishima , Hiromi Yajima , Riichirou Aoki
发明人： Masako Kodera , Atsushi Shigeta , Shiro Mishima , Hiromi Yajima , Riichirou Aoki
IPC分类号： B24B37/04 , B24B49/12 , H01L21/66 , H01L21/306
CPC分类号： B24B37/005 , B24B37/042 , B24B49/12 , H01L22/20
摘要： A film formed on a wafer is polished in a CMP unit. Thereafter, the wafer, which is adhered to a wafer holder, is moved to a portion above an optical sensor. A surface of the wafer is radiated with, for example, a visible ray, thereby measuring a thickness of the film which has been polished. A control unit automatically sets a polishing time for polishing a film on a wafer to be polished next.
摘要翻译： 在CMP单元上抛光形成在晶片上的膜。 此后，粘附到晶片保持器上的晶片移动到光学传感器上方的部分。 用例如可见光辐射晶片的表面，从而测量已经被抛光的膜的厚度。 控制单元自动设置抛光时间，用于在随后抛光的晶片上抛光膜。
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公开(公告)号：US4920750A
公开(公告)日：1990-05-01
申请号：US260471
申请日：1988-10-13
申请人： Naotsugu Iishiki , Shigetou Okano , Shiro Mishima
发明人： Naotsugu Iishiki , Shigetou Okano , Shiro Mishima
CPC分类号： F01K25/08 , F01D15/005 , F01K3/00 , F02G5/04 , F25B11/00 , F25B27/00 , F02B3/06 , Y02T10/166
摘要： This is a heat exchanger having a heating cycle part and a thermal cycle part. The heating cycle part comprises a compressor which is driven by the thermal power cycle in a heating medium circulation line connecting a radiator and an evaporator while the thermal power cycle part includes a turbo-engine in the thermal power medium circulation line connecting a condenser and an evaporator. The output shaft of the turbo-engine is connected to the compressor, and a heater as a constant heat source is provided for heating the evaporator in the thermal power medium circulation line. If the compressor is replaced with a power generator, the heat exchanger can be used as a power generator/heat exchanger of temperature-difference-driven type. The components are housed in a pressure vessel to thereby simplify the structure without necessity for a special pressure resistance structure.
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公开(公告)号：US07198552B2
公开(公告)日：2007-04-03
申请号：US11294365
申请日：2005-12-06
申请人： Toyomi Nishi , Tetsuji Togawa , Harumitsu Saito , Manabu Tsujimura , Hiromi Yajima , Kazuaki Himukai , Shoichi Kodama , Yukio Imoto , Riichiro Aoki , Masako Watase , Atsushi Shigeta , Shiro Mishima , Gisuke Kouno
发明人： Toyomi Nishi , Tetsuji Togawa , Harumitsu Saito , Manabu Tsujimura , Hiromi Yajima , Kazuaki Himukai , Shoichi Kodama , Yukio Imoto , Riichiro Aoki , Masako Watase , Atsushi Shigeta , Shiro Mishima , Gisuke Kouno
IPC分类号： B24B1/00
CPC分类号： B24B37/345 , B08B1/04 , B08B15/02 , B24B27/0023 , B24B51/00 , B24B55/12 , F24F3/161 , H01L21/67017 , H01L21/67028 , H01L21/67057 , H01L21/67219
摘要： A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.
摘要翻译： 用于抛光工件表面的抛光装置包括壳体单元，将壳体单元的内部分隔成第一室和第二室的分隔壁，设置在第一室中的抛光部分，并且具有带有研磨布的转台 安装在其上表面和位于转台上方的顶环，用于支撑待抛光的工件并将工件压靠在研磨布上，以及设置在第二室中并清洁已经被抛光的工件的清洁部。 抛光装置还包括转印装置，用于通过用于从每个抛光部分和清洁部分分别且独立地排出周围空气的开口和排气系统将已经从抛光部分抛光的工件传送到清洁部分。
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公开(公告)号：US5679063A
公开(公告)日：1997-10-21
申请号：US590477
申请日：1996-01-24
申请人： Norio Kimura , You Ishii , Hozumi Yasuda , Koji Saito , Masako Watase , Shiro Mishima
发明人： Norio Kimura , You Ishii , Hozumi Yasuda , Koji Saito , Masako Watase , Shiro Mishima
摘要： A polishing apparatus for polishing a surface of an object such as a semiconductor wafer includes a turntable having a polishing cloth mounted on an upper surface thereof, a top ring for holding and pressing the object against the polishing cloth, and a plurality of radially arranged nozzles for supplying a polishing solution, containing abrasive material, of different concentrations that differ along a radial direction of the polishing cloth.
摘要翻译： 用于研磨诸如半导体晶片的物体的表面的抛光装置包括具有安装在其上表面上的抛光布的转盘，用于将物体保持并按压在抛光布上的顶环，以及多个径向布置的喷嘴 用于供应不同浓度的研磨材料的抛光溶液，该研磨材料沿抛光布的径向方向不同。
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公开(公告)号：US06997782B2
公开(公告)日：2006-02-14
申请号：US10255793
申请日：2002-09-27
申请人： Toyomi Nishi , Tetsuji Togawa , Harumitsu Saito , Manabu Tsujimura , Hiromi Yajima , Kazuaki Himukai , Shoichi Kodama , Yukio Imoto , Riichiro Aoki , Masako Watase , Atsushi Shigeta , Shiro Mishima , Gisuke Kouno
发明人： Toyomi Nishi , Tetsuji Togawa , Harumitsu Saito , Manabu Tsujimura , Hiromi Yajima , Kazuaki Himukai , Shoichi Kodama , Yukio Imoto , Riichiro Aoki , Masako Watase , Atsushi Shigeta , Shiro Mishima , Gisuke Kouno
IPC分类号： B24B1/00
CPC分类号： B24B37/345 , B08B1/04 , B08B15/02 , B24B27/0023 , B24B51/00 , B24B55/12 , F24F3/161 , H01L21/67017 , H01L21/67028 , H01L21/67057 , H01L21/67219
摘要： A polishing apparatus for polishing a surface of a workpiece includes a housing unit, a partition wall partitioning an interior of the housing unit into a first chamber and a second chamber, a polishing section disposed in the first chamber and having a turntable with an abrasive cloth mounted on an upper surface thereof and a top ring positioned above the turntable for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, and a cleaning section disposed in the second chamber and cleaning the workpiece which has been polished. The polishing apparatus further includes a transferring device for transferring the workpiece which has been polished from the polishing section to the cleaning section through an opening and an exhaust system for exhausting ambient air from each of the polishing section and cleaning section separately and independently.
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