公开(公告)号：US07011994B2

公开(公告)日：2006-03-14

申请号：US11078889

申请日：2005-03-10

申请人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

IPC分类号： H01L21/00 ,  H01L21/4763

CPC分类号： H05K3/0026 ,  H01L21/31138 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76804 ,  H01L23/3107 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/38 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00

摘要： A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.

摘要翻译： 形成通孔的方法包括在第一布线层上放置绝缘层，在绝缘层中形成开口部分，并在绝缘层上形成第二布线层。 在形成开口部分时，用聚焦位置交错的激光束照射绝缘层。

公开(公告)号：US06974711B2

公开(公告)日：2005-12-13

申请号：US11103792

申请日：2005-04-12

申请人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L25/075 ,  H01L21/00 ,  H01L21/44

CPC分类号： H01L21/6835 ,  H01L24/82 ,  H01L25/0753 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00012

摘要： A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

摘要翻译： 一种器件传送方法，包括以下步骤：用树脂层覆盖已经形成在衬底上的多个器件; 在所述树脂层中形成电极，使得所述电极与所述器件连接; 切割树脂层，以获得每个包含至少一个装置的树脂掩埋装置; 并将树脂掩埋装置从基板上剥离并将其转移到装置转移体上。 该装置传送方法有利于容易地平滑地分离装置，并且便于在传送步骤中处理装置并且确保装置和外部布线之间良好的电连接，即使这些装置是精细装置。

公开(公告)号：US07091525B2

公开(公告)日：2006-08-15

申请号：US11103750

申请日：2005-04-11

申请人： Toyoharu Oohata ,  Hideharu Nakajima ,  Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

发明人： Toyoharu Oohata ,  Hideharu Nakajima ,  Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

IPC分类号： H01L21/00

CPC分类号： H01L25/0753 ,  H01L27/156 ,  H01L33/24 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.

摘要翻译： 通过将绝缘材料中的至少一部分发光器件埋入而形成显示器件，其中形成用于发光器件的驱动电极以在绝缘材料的表面上被抽出。 通过在基体上二维排列这样的发光装置来制造显示单元。 由于显示装置通过将绝缘材料中精细地形成的发光器件埋入而进行模块化，将发光器件重新形成为易于处理的尺寸，因此可以抑制使用这种显示装置的显示单元的制造成本 并且确保发光装置的期望的处理性能; 例如，便于携带发光器件或将其安装在基体上。

公开(公告)号：US20060154444A1

公开(公告)日：2006-07-13

申请号：US11372561

申请日：2006-03-10

申请人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/324

CPC分类号： H05K3/0026 ,  H01L21/31138 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76804 ,  H01L23/3107 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/38 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00

摘要： A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.

摘要翻译： 形成通孔的方法包括在第一布线层上放置绝缘层，在绝缘层中形成开口部分，并在绝缘层上形成第二布线层。 在形成开口部分时，用聚焦位置交错的激光束照射绝缘层。

公开(公告)号：US20050042784A1

公开(公告)日：2005-02-24

申请号：US10950024

申请日：2004-09-23

申请人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L25/075 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/56 ,  H01L21/00

CPC分类号： H01L24/82 ,  H01L21/6835 ,  H01L24/24 ,  H01L25/0753 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

公开(公告)号：US06984542B2

公开(公告)日：2006-01-10

申请号：US11099000

申请日：2005-04-05

申请人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H05K3/0026 ,  H01L21/31138 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76804 ,  H01L23/3107 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/38 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00

摘要： A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.

公开(公告)号：US20050181548A1

公开(公告)日：2005-08-18

申请号：US11103792

申请日：2005-04-12

申请人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L25/075 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L21/6835 ,  H01L24/82 ,  H01L25/0753 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00012

摘要： A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

公开(公告)号：US06921675B2

公开(公告)日：2005-07-26

申请号：US10950024

申请日：2004-09-23

申请人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

IPC分类号： H01L21/60 ,  H01L21/68 ,  H01L25/075 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/56 ,  H01L21/44

CPC分类号： H01L24/82 ,  H01L21/6835 ,  H01L24/24 ,  H01L25/0753 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

摘要翻译： 一种器件传送方法，包括以下步骤：用树脂层覆盖已经形成在衬底上的多个器件; 在所述树脂层中形成电极，使得所述电极与所述器件连接; 切割树脂层，以获得每个包含至少一个装置的树脂掩埋装置; 并将树脂掩埋装置从基板上剥离并将其转移到装置转移体上。 该装置传送方法有利于容易地平滑地分离装置，并且便于在传送步骤中处理装置并且确保装置和外部布线之间良好的电连接，即使这些装置是精细装置。

公开(公告)号：US20050158989A1

公开(公告)日：2005-07-21

申请号：US11078889

申请日：2005-03-10

申请人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toshiaki Iwafuchi

IPC分类号： H01L21/28 ,  G09F9/33 ,  H01L21/302 ,  H01L21/48 ,  H01L21/68 ,  H01L21/768 ,  H01L23/31 ,  H01L25/075 ,  H01L33/00 ,  H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/48 ,  H01L33/54 ,  H01S3/00 ,  H05K3/00 ,  H01L21/4763

CPC分类号： H05K3/0026 ,  H01L21/31138 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76804 ,  H01L23/3107 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/38 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/3025 ,  H01L2933/0016 ,  H01L2924/00

摘要： A method for forming via holes includes placing an insulating layer on a first wiring layer, forming opening portions in the insulating layer, and forming a second wiring layer on the insulating layer. At the time of forming the opening portions, the insulating layer is irradiated with a laser beam with the focus position staggered.

摘要翻译： 形成通孔的方法包括在第一布线层上放置绝缘层，在绝缘层中形成开口部分，并在绝缘层上形成第二布线层。 在形成开口部分时，用聚焦位置交错的激光束照射绝缘层。

公开(公告)号：US06830946B2

公开(公告)日：2004-12-14

申请号：US10062776

申请日：2002-01-30

申请人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

发明人： Yoshiyuki Yanagisawa ,  Toyoharu Oohata ,  Toshiaki Iwafuchi

IPC分类号： H01L2144

CPC分类号： H01L24/82 ,  H01L21/6835 ,  H01L24/24 ,  H01L25/0753 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/24226 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01049 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A device transfer method includes the steps of: covering a plurality of devices, which have been formed on a substrate, with a resin layer; forming electrodes in the resin layer in such a manner that the electrodes are connected to the devices; cutting the resin layer, to obtain resin buried devices each containing at least one of the devices; and peeling the resin buried devices from the substrate and transferring them to a device transfer body. This device transfer method is advantageous in easily, smoothly separating devices from each other, and facilitating handling of the devices in a transfer step and ensuring good electric connection between the devices and external wiring, even if the devices are fine devices.

摘要翻译： 一种器件传送方法，包括以下步骤：用树脂层覆盖已经形成在衬底上的多个器件; 在所述树脂层中形成电极，使得所述电极与所述器件连接; 切割树脂层，以获得每个包含至少一个装置的树脂掩埋装置; 并将树脂掩埋装置从基板上剥离并将其转移到装置转移体上。 该装置传送方法有利于容易地平滑地分离装置，并且便于在传送步骤中处理装置并且确保装置和外部布线之间良好的电连接，即使这些装置是精细装置。