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公开(公告)号：US08174125B2
公开(公告)日：2012-05-08
申请号：US12412811
申请日：2009-03-27
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing method of a semiconductor device comprises: providing a first insulating film whose relative dielectric constant is at most a predetermined value above a substrate; providing a second insulating film whose relative dielectric constant is greater than the predetermined value on a surface of the first insulating film; forming a recess for a wire through the second insulating film and extending into the first insulating film, and also forming a recess for a dummy wire through the second insulating film and extending into the first insulating film spaced from a formed area of the recess for the wire; providing a conductive material inside the recess for the wire and the recess for the dummy wire; and providing a wire inside the recess for the wire and providing a dummy wire inside the recess for the dummy wire by polishing and removing the conductive material.
摘要翻译： 半导体器件的制造方法包括：提供相对介电常数在基板上方至多预定值的第一绝缘膜; 提供在所述第一绝缘膜的表面上相对介电常数大于所述预定值的第二绝缘膜; 通过所述第二绝缘膜形成用于电线的凹槽并延伸到所述第一绝缘膜中，并且还通过所述第二绝缘膜形成用于虚拟线的凹槽并且延伸到与所述凹部的形成区域间隔开的所述第一绝缘膜中， 线; 在用于线的凹槽内部和用于虚拟线的凹槽内提供导电材料; 并且在所述凹槽内提供用于所述导线的线，并且通过抛光和去除所述导电材料在所述虚拟线的所述凹部内部提供虚拟线。
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22.发明申请POST-CMP TREATING LIQUID AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 审中-公开使用其的半导体器件的后CMP处理液体和制造方法公开(公告)号：US20110195888A1
公开(公告)日：2011-08-11
申请号：US13091732
申请日：2011-04-21
IPC分类号： C11D3/60
CPC分类号： H01L21/02074
摘要： Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Another includes water, polyphenol, an anionic surfactant, ethylene diamine tetraacetic acid, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 10 to 60 nm, and tetramethyl ammonium hydroxide. Both of the treating liquids have a pH ranging from 4 to 9, and exhibit a polishing rate both of an insulating film and a conductive film at a rate of 10 nm/min or less.
摘要翻译： 提供后CMP处理液，其中之一包括水，两性表面活性剂，阴离子表面活性剂，络合剂，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm， 和四甲基氢氧化铵。 另外还包括水，多酚，阴离子表面活性剂，乙二胺四乙酸，其表面具有羧基和磺酰基的树脂颗粒，其一次粒径为10至60nm，四甲基氢氧化铵。 两种处理液的pH范围为4至9，并且以10nm / min或更低的速率显示绝缘膜和导电膜的抛光速率。
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公开(公告)号：US20090068840A1
公开(公告)日：2009-03-12
申请号：US12200388
申请日：2008-08-28
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31053 , H01L21/7682 , H01L21/76834
摘要： A polishing liquid is provided, which includes abrasive grains and a surfactant. The abrasive grains contain a first colloidal silica having an average primary particle diameter of 45-80 nm and a second colloidal silica having an average primary particle diameter of 10-25 nm. The weight w1 of the first colloidal silica and the weight w2 of the second colloidal silica satisfy the relationship represented by the following expression 1. 0.63≦w1/(w1+w2)≦0.83 Expression 1
摘要翻译： 提供了包括磨粒和表面活性剂的抛光液。 磨粒含有平均一次粒径为45-80nm的第一胶体二氧化硅和平均一次粒径为10-25nm的第二胶体二氧化硅。 第一胶体二氧化硅的重量w1和第二胶态二氧化硅的重量w2满足下述式1所示的关系。<？在线式描述=“在线式”末端=“铅”≥0.63 <= w1 /（w1 + w2）<= 0.83表达式1 <？in-line-formula description =“In-line Formulas”end =“tail”？>
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24.发明申请Substrate holding mechanism, substrate polishing apparatus and substrate polishing method 有权基板保持机构，基板研磨装置和基板研磨方法公开(公告)号：US20060205323A1
公开(公告)日：2006-09-14
申请号：US10539245
申请日：2003-12-26
申请人： Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
发明人： Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
CPC分类号： B24B37/015 , B24B41/061 , B24B55/02
摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.
摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够有效地 防止研磨液和研磨粉尘附着在基板保持部的外周部并在其上干燥。 基板保持机构（顶环1）具有安装凸缘2，支撑构件6和保持环3.待被抛光的基板W被保持在由保持环3包围的支撑构件6的下侧， 将基板W压在研磨面上。 安装凸缘2设置有与至少保持环3相邻的流动通道26。 通过流路26提供的温度控制气体，以冷却安装凸缘2，支撑构件6和保持环3。 保持环3设置有与流路26连通的多个通孔3a，以将流过流路26的气体喷射到研磨台的研磨面上。
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25.发明授权Method of manufacturing semiconductor device using chemical mechanical polishing 有权使用化学机械抛光制造半导体器件的方法公开(公告)号：US07101801B2
公开(公告)日：2006-09-05
申请号：US10704628
申请日：2003-11-12
IPC分类号： H01L21/302
CPC分类号： H01L21/76229 , C09G1/02 , H01L21/31053
摘要： A method for manufacturing a semiconductor device, which includes performing a first chemical mechanical polishing of a surface of an object having an uneven surface by making use of a first polishing liquid containing abrasive particles and a surfactant, and performing a second chemical mechanical polishing of the surface of the object that has been polished by the first chemical mechanical polishing by making use of a second polishing liquid containing abrasive particles and having a concentration of a surfactant lower than that of the first polishing liquid, wherein the first chemical mechanical polishing is switched to the second chemical mechanical polishing when the uneven surface of object is flattened.
摘要翻译： 一种半导体装置的制造方法，其特征在于，包括利用含有研磨粒子和表面活性剂的第一研磨液对所述具有凹凸表面的物体的表面进行第一次化学机械研磨，并对所述半导体装置进行第二化学机械研磨 通过使用含有研磨颗粒并且具有低于第一研磨液的表面活性剂浓度的第二研磨液，通过第一化学机械抛光抛光的物体的表面，其中将第一化学机械抛光切换到 第二次化学机械抛光时物体表面不平整。
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公开(公告)号：US07042099B2
公开(公告)日：2006-05-09
申请号：US10640004
申请日：2003-08-14
CPC分类号： H01L23/53295 , H01L21/76807 , H01L21/76832 , H01L21/7684 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a semiconductor device comprising a substrate, a first insulating film which is provided above the substrate and has a relative dielectric constant which is at most a predetermined value, a second insulating film which is provided on a surface of the first insulating film and has a relative dielectric constant greater than the predetermined value, a wire which is provided in a recess for the wire, which is formed passing through the second insulating film and extending into the first insulating film, and a dummy wire provided in a recess for the dummy wire, which is formed passing through the second insulating film and extending into the first insulating film, and is located in a predetermined area spaced from an area where the wire is provided.
摘要翻译： 公开了一种半导体器件，包括：衬底;第一绝缘膜，设置在衬底上方，并且具有至多预定值的相对介电常数;第二绝缘膜，设置在第一绝缘膜的表面上;以及 具有大于预定值的相对介电常数，设置在通过第二绝缘膜并延伸到第一绝缘膜中的用于导线的凹槽中的导线，以及设置在凹部中的虚拟线，用于 虚线穿过第二绝缘膜并延伸到第一绝缘膜中，并且位于与设置导线的区域间隔开的预定区域中。
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公开(公告)号：US20050227489A1
公开(公告)日：2005-10-13
申请号：US10771060
申请日：2004-02-04
IPC分类号： B24B37/20 , B24B37/24 , B24B37/26 , B24D3/32 , B24D13/14 , C08J5/14 , C08L3/02 , C08L101/00 , H01L21/304 , H01L21/302
摘要： Disclosed is a CMP pad which is abrasive-free and comprises cells and/or a recessed portion-forming material both having an average diameter ranging from 0.05 to 290 μm and occupying a region ranging from 0.1% by volume to 5% by volume based on an entire volume of the pad, and an organic material.
摘要翻译： 公开了一种无磨料的CMP垫，其包含平均直径范围为0.05至290μm的电池和/或凹陷部分形成材料，并且占据了基于0.1至5体积％的范围，基于 整个体积的垫，和有机材料。
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公开(公告)号：US06835116B2
公开(公告)日：2004-12-28
申请号：US09764318
申请日：2001-01-19
申请人： Shozo Oguri , Hideo Aizawa , Kenichi Shigeta , Yoshikuni Tateyama
发明人： Shozo Oguri , Hideo Aizawa , Kenichi Shigeta , Yoshikuni Tateyama
IPC分类号： B24B4900
CPC分类号： B24B53/017 , B24B49/12
摘要： A polishing apparatus for polishing a workpiece comprises a polishing table having a polishing surface and a top ring for holding the workpiece and pressing the workpiece against the polishing surface. The polishing table and the top ring are rotated independently of each other. The polishing apparatus further comprises a dresser for dressing the polishing surface with certain timing and a sensor for observing a property of the polishing surface on the polishing table when the polishing surface is being dressed by the dresser.
摘要翻译： 用于抛光工件的抛光装置包括具有抛光表面的抛光台和用于保持工件并将工件压靠在抛光表面上的顶环。 抛光台和顶环彼此独立地旋转。 抛光装置还包括用于在某些时刻修整抛光表面的修整器和用于在抛光表面被修整器修整时观察研磨台上抛光表面的特性的传感器。
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公开(公告)号：US5664989A
公开(公告)日：1997-09-09
申请号：US683265
申请日：1996-07-18
申请人： Rempei Nakata , Hisashi Kaneko , Nobuo Hayasaka , Takeshi Nishioka , Yoshikuni Tateyama , Yutaka Nakano , Yasutaka Sasaki
发明人： Rempei Nakata , Hisashi Kaneko , Nobuo Hayasaka , Takeshi Nishioka , Yoshikuni Tateyama , Yutaka Nakano , Yasutaka Sasaki
CPC分类号： B24B37/22
摘要： A polishing pad comprises at least a first layer having a first main surface serving to polish a substrate to be polished and a second main surface, and a second layer positioned to face the second main surface of the first layer and having fine bags arranged therein, fluid being hermetically sealed in the fine bag.
摘要翻译： 抛光垫至少包括具有用于抛光待抛光基板的第一主表面和第二主表面的第一层，以及设置成面对第一层的第二主表面并且具有布置在其中的细小袋的第二层， 流体密封在细袋中。
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30.发明授权Substrate holding mechanism, substrate polishing apparatus and substrate polishing method 有权基板保持机构，基板研磨装置和基板研磨方法公开(公告)号：US07883394B2
公开(公告)日：2011-02-08
申请号：US12184032
申请日：2008-07-31
申请人： Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
发明人： Tetsuji Togawa , Toshio Watanabe , Hiroyuki Yano , Gen Toyota , Kenji Iwade , Yoshikuni Tateyama
IPC分类号： B24B49/00
CPC分类号： B24B37/015 , B24B41/061 , B24B55/02
摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.
摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够 有效地防止研磨液和抛光尘埃附着在基板保持部的外周部并干燥。 基板保持机构具有安装凸缘，支撑构件6和保持环。 待研磨的基板被保持在由保持环包围的支撑构件的下侧，并且基板被压靠在抛光台的抛光表面上。 安装凸缘设置有至少与保持环相邻的流动通道。 通过流路供给温度控制气体以冷却安装凸缘，支撑构件和保持环。 保持环设置有与流路连通的多个通孔，以将流过流道的气体喷射到抛光台的抛光表面上。
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