公开(公告)号：US20230081609A1

公开(公告)日：2023-03-16

申请号：US17799299

申请日：2021-02-12

Applicant: ams-OSRAM International GMBH

Inventor： Hubert HALBRITTER

IPC: G01S17/32 ,  G01S17/58 ,  G01S7/48 ,  G01S7/481

Abstract: A laser system may include a semiconductor laser configured to emit laser radiation in continuous wave operation at M modes having differing angular frequencies, where 2 ≤ M and where n ∈ [1; M]ℕ. A tuning apparatus may periodically modify the angular frequencies where a variation of each angular frequency is smaller by at least a factor of 2 than a mode distance between the relevant adjacent angular frequencies. A detector has an upper cutoff frequency which is smaller by at least a factor of 10 than the smallest of the mode distances. A beam splitter may guide the M modes each to the detector and to an object, such that the detector may detect, for each of the M modes, portions of the laser radiation reflected by the object and portions of the laser radiation which come optically directly from the semiconductor laser.

公开(公告)号：US20250102635A1

公开(公告)日：2025-03-27

申请号：US18730334

申请日：2022-12-20

Applicant: ams-OSRAM International GMBH

Inventor： Reiner WINDISCH ,  Hubert HALBRITTER ,  Simon LANKES

IPC: G01S7/481 ,  G01S17/32

Abstract: A detector is provided which includes at least the following features: a substrate; and at least a first detector element and a second detector element, which are arranged laterally next to one another on a main surface of the substrate, wherein each of the detector elements includes an active semiconductor layer configured for converting electromagnetic radiation having a wavelength λ into an electrical signal, each of the detector elements includes a first main surface and a second main surface opposite the first main surface, and the first main surface and the second main surface are each configured for coupling in and for coupling out electromagnetic radiation of wavelength λ. Furthermore, a lidar module and a method for operating a lidar module are specified.

公开(公告)号：US20250047076A1

公开(公告)日：2025-02-06

申请号：US18716851

申请日：2022-11-16

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER

IPC: H01S5/42

Abstract: The invention relates to a laser diode component including a first semiconductor layer stack which has a first active zone for emitting a first laser radiation, a second semiconductor layer stack which has a second active zone for emitting a second laser radiation, the first and second semiconductor layer stacks following one another in a main emission direction, a resonator which has a first reflective layer and a second reflective layer, and an electrically conductive connecting region which is arranged between the first and second semiconductor layer stacks and has a first connecting layer and a second connecting layer, wherein the first connecting layer is applied to the first semiconductor layer stack, and the second connecting layer is applied to the second semiconductor layer stack. The invention also relates to a method for producing at least one laser diode component.

公开(公告)号：US20250015561A1

公开(公告)日：2025-01-09

申请号：US18708399

申请日：2022-11-02

Applicant: ams-OSRAM International GmbH

Inventor： Norwin VON MALM ,  Hubert HALBRITTER

IPC: H01S5/183 ,  H01S5/02

Abstract: The invention relates to a method for producing a multiplicity of vertically emitting semiconductor laser diodes, including providing a growth substrate, epitaxially growing an epitaxial semiconductor layer sequence including an active layer for generating electromagnetic radiation and including a sacrificial layer, wherein the sacrificial layer is disposed between the growth substrate and the active layer, forming trenches in the semiconductor layer sequence, resulting in a multiplicity of semiconductor layer stacks being formed and portions of the sacrificial layer being exposed, applying a carrier onto the epitaxial semiconductor layer sequence, and detaching the growth substrate by electrochemically etching the sacrificial layer, wherein an electrochemical etchant has access to the sacrificial layer through a cut-out in the growth substrate and/or through a cavity in the carrier. The invention also relates to a vertically emitting semiconductor laser diode.

公开(公告)号：US20250012896A1

公开(公告)日：2025-01-09

申请号：US18712335

申请日：2022-11-22

Applicant: ams-OSRAM International GmbH

Inventor： Simon LANKES ,  Hubert HALBRITTER ,  Reiner WINDISCH

IPC: G01S7/481

Abstract: An optoelectronic component for a LiDAR module includes a carrier, a laser light source, and a detector element. The laser light source is designed for the generation of coherent electromagnetic radiation of a wavelength L1. The detector element is designed for coherent detection of incoming electromagnetic radiation of the wavelength L1 depending on a local oscillator signal. The laser light source and the detector element are arranged opposite one another on different sides of the carrier such that, during operation, electromagnetic radiation generated from the laser light source is coupled into the detector element via a first main surface through the carrier as the local oscillator signal and is coupled out via a second main surface.

公开(公告)号：US20250007246A1

公开(公告)日：2025-01-02

申请号：US18579587

申请日：2022-06-14

Applicant: ams-OSRAM International GmbH

Inventor： Laura KREINER ,  Hubert HALBRITTER

IPC: H01S5/183 ,  H01S5/30

Abstract: The invention relates to a method for producing a plurality of surface-emitting semiconductor laser diodes, including the following steps:—providing a growth substrate,—applying a mask layer with a plurality of openings onto the growth substrate, so that regions of the growth substrate are exposed through the openings,—applying a first intermediate layer at least onto the exposed regions of the growth substrate, the first intermediate layer having a quasi two-dimensional material, and—epitaxial growing of an epitaxial semiconductor layer sequence on the first intermediate layer, wherein the epitaxial semiconductor layer sequence has an active layer for generating electromagnetic radiation.

公开(公告)号：US20240275125A1

公开(公告)日：2024-08-15

申请号：US18563049

申请日：2022-05-24

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Sven GERHARD ,  Bruno JENTZSCH ,  Tilman RÜGHEIMER ,  Christoph WALTER

IPC: H01S5/02255 ,  H01S5/02 ,  H01S5/02345 ,  H01S5/185 ,  H01S5/323 ,  H01S5/42

CPC classification number: H01S5/02255 ,  H01S5/0207 ,  H01S5/185 ,  H01S5/42 ,  H01S5/02345 ,  H01S5/32341

Abstract: The disclosed optoelectronic semiconductor chip includes a carrier, a semiconductor layer sequence on the carrier having at least one active zone for generating radiation, a layer of high optical refractive index on an output coupling facet of the semiconductor layer sequence for the output coupling of radiation, and a coating of low optical refractive index directly on an outer side of the layer of high optical refractive index for the total internal reflection of the radiation, wherein the semiconductor layer sequence is configured to guide the radiation in the active zone perpendicularly to a growth direction of the semiconductor layer sequence, and the layer of high optical refractive index is configured to deflect the radiation at the outer side parallel to the growth direction.

公开(公告)号：US20230408693A1

公开(公告)日：2023-12-21

申请号：US18250361

申请日：2021-10-12

Applicant: ams-OSRAM International GmbH

Inventor： Martin Rudolf BEHRINGER ,  Hubert HALBRITTER ,  Stephan HANEDER

IPC: G01S17/34 ,  G01S7/481 ,  G01S7/4912

CPC classification number: G01S17/34 ,  G01S17/931 ,  G01S7/4917 ,  G01S7/4815

Abstract: An FMCW LIDAR system includes a laser which emits a laser beam and a radiation source which comprises a frequency comb generator. The semiconductor laser may be a VCSEL. The frequency comb generator generates a frequency comb from the laser beam. A beam bundle comprising a plurality of laser beams, each of which has a respective wavelength of λ1, λ2, λ3, . . . λn, or laser mode, is generated from the laser beam having a wavelength λ0. The generated beam bundle is fed to a beam splitter which allows one part of each individual laser beam to pass in the direction of the object to be measured. Another part of each individual laser beam is allowed to pass as a reference beam in the direction of an assembly of detector elements. The system may further include a first grating and a second grating.

公开(公告)号：US20230361090A1

公开(公告)日：2023-11-09

申请号：US18042621

申请日：2021-08-20

Applicant: ams-OSRAM International GmbH

Inventor： Hubert HALBRITTER ,  Bruno JENTZSCH

IPC: H01L25/075 ,  H01L33/60 ,  H01L33/00 ,  H01S5/185

CPC classification number: H01L25/0753 ,  H01L33/60 ,  H01L33/0045 ,  H01S5/185 ,  H01L2933/0058

Abstract: Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps:—providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation,—producing a first recess in the semiconductor layer sequence, which fully penetrates the active region,—producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.