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公开(公告)号：US11610998B2
公开(公告)日：2023-03-21
申请号：US17257364
申请日：2019-06-26
发明人： Rai Sato , Masami Jintyou , Masayoshi Dobashi , Takashi Shiraishi
IPC分类号： H01L27/00 , H01L29/00 , H01L51/00 , G02F1/1362 , H01L29/786 , H01L27/12 , H01L29/66
摘要： A transistor in which shape defects are unlikely to occur is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a transistor. The transistor includes a semiconductor layer, a first insulating layer, a metal oxide layer, a functional layer, and a conductive layer. The first insulating layer is positioned over the semiconductor layer. The metal oxide layer is positioned over the first insulating layer. The functional layer is positioned over the metal oxide layer. The conductive layer is positioned over the functional layer. The semiconductor layer, the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer have regions overlapping with each other. In the channel length direction of the transistor, end portions of the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer are positioned inward from an end portion of the semiconductor layer. An etching rate of the functional layer with an etchant containing one or more of phosphoric acid, acetic acid, nitric acid, hydrochloric acid, and sulfuric acid is lower than an etching rate of the conductive layer.
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公开(公告)号：US11610997B2
公开(公告)日：2023-03-21
申请号：US16759020
申请日：2018-11-15
发明人： Shunpei Yamazaki , Shota Sambonsuge , Yasumasa Yamane , Yuta Endo , Naoki Okuno
IPC分类号： H01L29/786 , H01L27/108 , H01L29/22
摘要： A semiconductor material is an oxide including a metal element and nitrogen, in which the metal element is indium (In), an element M (M is aluminum (Al), gallium (Ga), yttrium (Y), or tin (Sn)), and zinc (Zn) and nitrogen is taken into an oxygen vacancy or bonded to an atom of the metal element.
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公开(公告)号：US11610918B2
公开(公告)日：2023-03-21
申请号：US16704462
申请日：2019-12-05
发明人： Shunpei Yamazaki , Kengo Akimoto , Shigeki Komori , Hideki Uochi , Rihito Wada , Yoko Chiba
IPC分类号： H01L27/12 , H01L29/417 , G02F1/1339 , G02F1/1345 , H01L29/786 , H01L29/66 , H01L27/32 , H01L29/04 , H01L29/24 , H01L51/52
摘要： A display device includes a pixel portion in which a pixel electrode layer is arranged in a matrix, and an inverted staggered thin film transistor having a combination of at least two kinds of oxide semiconductor layers with different amounts of oxygen is provided corresponding to the pixel electrode layer. In the periphery of the pixel portion in this display device, a pad portion is provided to be electrically connected to a common electrode layer formed on a counter substrate through a conductive layer made of the same material as the pixel electrode layer. One objection of our invention to prevent a defect due to separation of a thin film in various kinds of display devices is realized, by providing a structure suitable for a pad portion provided in a display panel.
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公开(公告)号：US11610877B2
公开(公告)日：2023-03-21
申请号：US17098484
申请日：2020-11-16
发明人： Shunpei Yamazaki , Hajime Kimura
摘要： A novel functional panel that is highly convenient or reliable is provided. The functional panel includes a light-emitting region including a first element, a first functional layer, and a second functional layer. The first element includes a first electrode, a second electrode, and a layer containing a light-emitting material. The layer containing a light-emitting material contains gallium nitride. The first functional layer includes a region positioned between the light-emitting region and the second functional layer, and includes a first insulating film. The first insulating film includes a first opening and a second opening on the outside of the light-emitting region. The second functional layer includes a driver circuit. The driver circuit includes a first transistor and a second transistor. The first transistor is electrically connected to the first electrode through the first opening, and the second transistor is electrically connected to the second electrode through the second opening.
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公开(公告)号：US11610544B2
公开(公告)日：2023-03-21
申请号：US17546696
申请日：2021-12-09
发明人： Shintaro Harada , Yoshiyuki Kurokawa , Takeshi Aoki , Yuki Okamoto , Hiroki Inoue , Koji Kusunoki , Yosuke Tsukamoto , Katsuki Yanagawa , Kei Takahashi , Shunpei Yamazaki
摘要： An electronic device capable of efficiently recognizing a handwritten character is provided.
The electronic device includes a first circuit, a display portion, and a touch sensor. The first circuit includes a neural network. The display portion includes a flexible display. The touch sensor has the function of outputting an input handwritten character as image information to the first circuit. The first circuit has the function of analyzing the image information and converting the image information into character information, and a function of displaying an image including the character information on the display portion. The analysis is performed by inference through the use of the neural network.-
公开(公告)号：US11610529B2
公开(公告)日：2023-03-21
申请号：US17423237
申请日：2020-01-20
发明人： Kazunori Watanabe , Susumu Kawashima , Masataka Shiokawa , Daisuke Kubota , Jiro Imada , Katsuki Yanagawa , Koji Kusunoki
摘要： A functional panel is provided. The functional panel includes a first driver circuit, a second driver circuit, and a region. The first driver circuit supplies a first selection signal, the second driver circuit supplies a second selection signal and a third selection signal, and the region includes a pixel. The pixel includes a first pixel circuit, a light-emitting element, a second pixel circuit, and a photoelectric conversion element. The first pixel circuit is supplied with the first selection signal, the first pixel circuit obtains an image signal on the basis of the first selection signal, the light-emitting element is electrically connected to the first pixel circuit, and the light-emitting element emits light on the basis of the image signal. The second pixel circuit is supplied with the second selection signal and the third selection signal in a period during which the first selection signal is not supplied, the second pixel circuit obtains an imaging signal on the basis of the second selection signal and supplies the imaging signal on the basis of the third selection signal, and the photoelectric conversion element is electrically connected to the second pixel circuit and generates the imaging signal.
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公开(公告)号：US11609613B2
公开(公告)日：2023-03-21
申请号：US17585680
申请日：2022-01-27
摘要： A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.
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公开(公告)号：US20230075180A1
公开(公告)日：2023-03-09
申请号：US17796916
申请日：2021-01-26
发明人： Hiroki INOUE , Seiichi YONEDA
IPC分类号： H01L21/8238 , H01L27/088 , H01L27/146
摘要： A semiconductor device that level-shifts a negative voltage and/or a positive voltage is provided. The semiconductor device includes a first transistor, a second transistor, a third transistor, a fourth transistor, a first capacitor, an input terminal, and an output terminal. A first terminal of the first transistor is electrically connected to a first terminal of the second transistor and the output terminal. A second terminal of the second transistor is electrically connected to a first terminal of the third transistor. A first terminal of the fourth transistor is electrically connected to a gate of the second transistor and a first terminal of the first capacitor, and a second terminal of the first capacitor is electrically connected to the input terminal. The first transistor, the second transistor, the third transistor, and the fourth transistor are of the same polarity.
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公开(公告)号：US11600883B2
公开(公告)日：2023-03-07
申请号：US17179979
申请日：2021-02-19
发明人： Ryota Tajima , Kazuhei Narita , Kensuke Yoshizumi
IPC分类号： H01M50/209 , H01M50/50 , H01M50/116 , H01M50/531 , H01M50/543 , H01M50/178
摘要： A battery module with high impact resistance is provided. A battery module using an elastic body such as rubber for its exterior body covering a battery is provided. A bendable battery module is provided. As the exterior body covering a battery, an elastic body such as rubber is used, and the exterior body is molded in two steps. First, a first portion provided with a depression in which a battery is stored is molded using a first mold. Next, a battery is inserted into the first portion. Subsequently, second molding is performed using a second mold so as to fill an opening of the depression in the first portion, so that a second portion is formed. The second portion serves as a cover for closing the opening of the depression in the first portion. The second portion is formed in contact with part of the electrodes in the battery and part of an end portion of the second exterior body in the battery.
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公开(公告)号：US11600645B2
公开(公告)日：2023-03-07
申请号：US17057526
申请日：2019-06-11
IPC分类号： H01L27/146 , H04N5/369 , H04N5/353 , H04N5/378 , H04N5/3745
摘要： An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.
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