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    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    21.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20150194509A1

    公开(公告)日：2015-07-09

    申请号：US14666753

    申请日：2015-03-24

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Hiroki OHARA ,  Toshinari SASAKI

    IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/477 ,  H01L21/02 ,  H01L21/441

    CPC分类号： H01L29/66969 ,  C01G15/006 ,  C01G45/006 ,  C01G49/009 ,  C01G51/006 ,  C01G53/006 ,  C01P2002/52 ,  C01P2006/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02266 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/441 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/7869

    摘要： An object is to provide a semiconductor device including a semiconductor element which has favorable characteristics. A manufacturing method of the present invention includes the steps of: forming a first conductive layer which functions as a gate electrode over a substrate; forming a first insulating layer to cover the first conductive layer; forming a semiconductor layer over the first insulating layer so that part of the semiconductor layer overlaps with the first conductive layer; forming a second conductive layer to be electrically connected to the semiconductor layer; forming a second insulating layer to cover the semiconductor layer and the second conductive layer; forming a third conductive layer to be electrically connected to the second conductive layer; performing first heat treatment after forming the semiconductor layer and before forming the second insulating layer; and performing second heat treatment after forming the second insulating layer.

    摘要翻译： 目的是提供一种具有有利特性的半导体元件的半导体器件。 本发明的制造方法包括以下步骤：在衬底上形成用作栅电极的第一导电层; 形成第一绝缘层以覆盖所述第一导电层; 在所述第一绝缘层上形成半导体层，使得所述半导体层的一部分与所述第一导电层重叠; 形成与半导体层电连接的第二导电层; 形成覆盖半导体层和第二导电层的第二绝缘层; 形成与第二导电层电连接的第三导电层; 在形成半导体层之后并在形成第二绝缘层之前进行第一热处理; 以及在形成所述第二绝缘层之后进行第二热处理。

    METHODS OF MAKING LOW COST ELECTRODE ACTIVE MATERIALS FOR SECONDARY BATTERIES FROM ILMENITE
    23.
    发明申请
    METHODS OF MAKING LOW COST ELECTRODE ACTIVE MATERIALS FOR SECONDARY BATTERIES FROM ILMENITE 审中-公开
    从ILMENITE制造二次电池的低成本电极活性材料的方法

    公开(公告)号：US20150076750A1

    公开(公告)日：2015-03-19

    申请号：US14485016

    申请日：2014-09-12

    申请人： Guiqing Huang ,  Boshan Mo ,  Youde Mo

    发明人： Guiqing Huang ,  Boshan Mo ,  Youde Mo

    IPC分类号： H01M4/485 ,  H01M4/58

    CPC分类号： H01M4/485 ,  C01B25/372 ,  C01B25/375 ,  C01B25/45 ,  C01C3/12 ,  C01G23/003 ,  C01G23/005 ,  C01G49/009 ,  C01G49/14 ,  H01M4/5825 ,  H01M10/052 ,  Y02P70/54

    摘要： A method of producing electrode active materials includes generating a source material of titanium (Ti) and a source material of iron (Fe) from an ilmenite, and performing a operation to the source material of Fe and the source material of Ti. The operation includes determining a content of Fe or Ti in the source material of Fe or Ti, preparing an intermediate mixture having the source material of Fe or Ti and other required source materials, ball-milling and drying the intermediate mixture, and sintering the intermediate mixture to form the electrode active materials.

    摘要翻译： 制造电极活性物质的方法包括从钛铁矿生成钛（Ti）的源材料和铁（Fe）源材料，并对Fe的源材料和Ti的源材料进行操作。 该操作包括测定Fe或Ti的原料中的Fe或Ti的含量，制备具有Fe或Ti源材料和其它所需的源材料的中间体混合物，对中间体混合物进行球磨和干燥，并烧结中间体 混合物形成电极活性物质。