公开(公告)号：US20130270681A1

公开(公告)日：2013-10-17

申请号：US13917117

申请日：2013-06-13

申请人： MagnaChip Semiconductor, Ltd.

发明人： Jung-Goo PARK

IPC分类号： H01L29/06

CPC分类号： H01L29/06 ,  H01L21/2253 ,  H01L21/2652 ,  H01L21/3225 ,  H01L27/11

摘要： A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen uniformly distributed within a variation of 10% over the bulk area.

摘要翻译： 提供硅晶片及其制造方法。 硅晶片包括从硅晶片的顶表面形成有预定深度的第一裸露区域，第一裸露区域形成有距离顶表面约20μm至约80μm的深度，形成的体积面积 在第一裸露区域和硅晶片的背面之间，具有在体积区域上均匀分布在10％变化范围内的氧浓度的体积区域。

公开(公告)号：US08486813B2

公开(公告)日：2013-07-16

申请号：US13150493

申请日：2011-06-01

申请人： Jung-Goo Park

发明人： Jung-Goo Park

IPC分类号： H01L21/322 ,  H01L21/36 ,  H01L21/20 ,  H01L21/461 ,  H01L21/302 ,  H01L21/324

CPC分类号： H01L29/06 ,  H01L21/2253 ,  H01L21/2652 ,  H01L21/3225 ,  H01L27/11

摘要： A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen uniformly distributed within a variation of 10% over the bulk area.

摘要翻译： 提供硅晶片及其制造方法。 硅晶片包括从硅晶片的顶表面形成有预定深度的第一裸露区域，第一裸露区域形成有距离顶表面约20μm至约80μm的深度，形成的体积面积 在第一裸露区域和硅晶片的背面之间，具有在体积区域上均匀分布在10％变化范围内的氧浓度的体积区域。

公开(公告)号：US08399341B2

公开(公告)日：2013-03-19

申请号：US13387125

申请日：2010-05-17

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/20

CPC分类号： H01L21/3225

摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

公开(公告)号：US08357592B2

公开(公告)日：2013-01-22

申请号：US12787750

申请日：2010-05-26

申请人： Kazunari Kurita

发明人： Kazunari Kurita

IPC分类号： H01L21/332

CPC分类号： H01L21/3225 ,  B23K26/0006 ,  B23K26/0624 ,  B23K2103/56 ,  H01L21/268

摘要： A method for manufacturing a semiconductor substrate dedicated to a semiconductor device, in which multi-photon absorption is generated in a micro-region inside the semiconductor substrate by condensing laser beams in any micro-region inside the semiconductor substrate, and a gettering sink is formed by changing the crystal structure of only the micro-region.

摘要翻译： 制造专用于半导体器件的半导体衬底的方法，其中通过在半导体衬底内的任何微区域聚焦激光束和吸气槽来形成在半导体衬底内的微区域中产生多光子吸收的方法 通过改变仅微区的晶体结构。

公开(公告)号：US20120241912A1

公开(公告)日：2012-09-27

申请号：US13421748

申请日：2012-03-15

申请人： Takeshi SENDA ,  Koji Araki

发明人： Takeshi SENDA ,  Koji Araki

IPC分类号： H01L29/34 ,  H01L21/306

CPC分类号： H01L21/306 ,  H01L21/0201 ,  H01L21/3225

摘要： There is provided a thermal treatment method of a silicon wafer. The method includes the successive steps of: (a) terminating silicon atoms existing on an active surface of the silicon wafer with hydrogen, wherein the active surface is mirror-polished, and a semiconductor device is to be formed on the active surface; (b) terminating the silicon atoms existing on the active surface of the silicon wafer with fluorine; (c) rapidly heating the silicon wafer to a first temperature under an inert gas atmosphere or a reducing gas atmosphere, wherein the first temperature is in a range of 1300° C. to 1400° C.; (d) holding the silicon wafer at the first temperature for a certain time; and (e) rapidly cooling the silicon wafer.

摘要翻译： 提供了硅晶片的热处理方法。 该方法包括以下连续步骤：（a）用氢终止存在于硅晶片的有源表面上的硅原子，其中所述活性表面被镜面抛光，并且半导体器件将形成在所述有源表面上; （b）用氟终止在硅晶片的活性表面上存在的硅原子; （c）在惰性气体气氛或还原气体气氛下将硅晶片快速加热到第一温度，其中第一温度在1300℃至1400℃的范围内; （d）将硅晶片在第一温度下保持一定时间; 和（e）快速冷却硅晶片。

公开(公告)号：US20120184091A1

公开(公告)日：2012-07-19

申请号：US13387125

申请日：2010-05-17

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/263

CPC分类号： H01L21/3225

摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二次热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

公开(公告)号：US08187954B2

公开(公告)日：2012-05-29

申请号：US12449200

申请日：2008-01-24

申请人： Yoshinori Hayamizu ,  Hiroyasu Kikuchi

发明人： Yoshinori Hayamizu ,  Hiroyasu Kikuchi

IPC分类号： H01L21/322

CPC分类号： C30B15/00 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225

摘要： The present invention provides a method for manufacturing a silicon single crystal wafer, in which a silicon single crystal wafer that is fabricated based on a Czochralski method and has an entire plane in a radial direction formed of an N region is subjected to a rapid thermal annealing in an oxidizing atmosphere, an oxide film formed in the rapid thermal annealing in the oxidizing atmosphere is removed, and then a rapid thermal annealing is carried out in a nitriding atmosphere, an Ar atmosphere, or a mixed atmosphere of these atmospheres. As a result, there can be provided the manufacturing method that can inexpensively manufacture a silicon single crystal wafer both in which a DZ layer is formed in a wafer surface layer to provide excellent device characteristics and in which an oxide precipitate functioning as a gettering site can be sufficiently formed in a bulk region.

摘要翻译： 本发明提供了一种制造硅单晶晶片的方法，其中制造基于切克劳斯基法并且具有由N区形成的沿径向的整个平面的硅单晶晶片经受快速热退火 在氧化气氛中，除去在氧化气氛中快速热退火中形成的氧化膜，然后在这些气氛的氮化气氛，Ar气氛或混合气氛中进行快速热退火。 结果，可以提供可以廉价地制造其中在晶片表面层中形成DZ层的硅单晶晶片以提供优异的器件特性并且其中作为吸杂位置起作用的氧化物沉淀物的制造方法 在体区域中充分地形成。

公开(公告)号：US08153538B1

公开(公告)日：2012-04-10

申请号：US12964143

申请日：2010-12-09

申请人： Larry Wayne Shive ,  Brian Lawrence Gilmore

发明人： Larry Wayne Shive ,  Brian Lawrence Gilmore

IPC分类号： H01L21/26 ,  H01L21/324

CPC分类号： H01L21/3247 ,  H01L21/3225 ,  H01L21/324

摘要： A process is disclosed for annealing a single crystal silicon wafer having a front surface and a back surface, and an oxide layer disposed on the front surface of the wafer extending over substantially all of the radial width. The process includes annealing the wafer in an annealing chamber having an atmosphere comprising oxygen. The process also includes maintaining a partial pressure of water above a predetermined value such that the wafer maintains the oxide layer through the annealing process. The annealed front surface is substantially free of boron and phosphorus.

摘要翻译： 公开了一种用于退火具有前表面和后表面的单晶硅晶片的工艺，以及设置在晶片的前表面上的氧化物层，其基本上全部径向宽度延伸。 该方法包括在具有包含氧的气​​氛的退火室中退火晶片。 该方法还包括保持水分压高于预定值，使得晶片通过退火工艺维持氧化物层。 退火的前表面基本上不含硼和磷。

公开(公告)号：US08142885B2

公开(公告)日：2012-03-27

申请号：US11947021

申请日：2007-11-29

申请人： Katsuhiko Nakai ,  Sei Fukushima

发明人： Katsuhiko Nakai ,  Sei Fukushima

IPC分类号： B32B7/02

CPC分类号： H01L21/3225 ,  C30B29/06 ,  C30B33/00 ,  Y10T428/24942 ,  Y10T428/24992

摘要： Silicon wafers and a process for their manufacture wherein both slip dislocation and occurrence of warpage are suppressed include heat treatment to provide wafers having plate-shaped BMDs, a density of BMDs whose diagonal lengths are in a range of 10 nm to 120 nm, of BMDs present in the bulk of the wafer at a distance of 50 μm or more is 1×1011/cm3 or more, and the density of BMDs whose diagonal lengths are 750 nm or more in the wafer bulk is 1×107/cm3 or less, and the interstitial oxygen concentration is 5×1017 atoms/cm3 or less. The process involves low and high temperature heat treating at under defined temperature ramping rates.

摘要翻译： 硅晶片及其制造方法，其中滑动位错和翘曲发生都被抑制包括热处理以提供具有板状BMD的晶片，对角线长度在10nm至120nm范围内的BMD的密度，BMD 以50μm以上的距离存在于晶片本体的1×10 11 / cm 3以上，晶片本体的对角线长度为750nm以上的BMD的密度为1×10 7 / cm 3以下， 间隙氧浓度为5×10 17原子/ cm 3以下。 该过程涉及在限定的温度升高速率下的低温和高温热处理。

公开(公告)号：US20110300371A1

公开(公告)日：2011-12-08

申请号：US13099033

申请日：2011-05-02

申请人： Shuichi Omote ,  Kazunari Kurita

发明人： Shuichi Omote ,  Kazunari Kurita

IPC分类号： C30B33/02 ,  B32B5/16

CPC分类号： H01L21/3225 ,  H01L21/3221 ,  Y10T428/25

摘要： [Problem] An object of the present invention is to provide an epitaxial substrate and a method for producing the same capable of suppressing metal contamination and thereby reducing occurrence of white defects of a solid state imaging sensor by maintaining sufficient gettering capability during a device manufacturing process.[Solving Means] The present invention is a method of producing an epitaxial substrate, comprising a step of growing an epitaxial layer on a silicon substrate containing carbon as a dopant to form an epitaxial substrate; and, after the formation of the epitaxial substrate, a step of applying a first thermal treatment and a second thermal treatment to the epitaxial substrate such that a density of oxygen precipitates in a surface layer of the silicon substrate constituting the epitaxial substrate is larger than a density of oxygen precipitates at a center of the silicon substrate in a thickness direction.

摘要翻译： 本发明的目的是提供一种外延基板及其制造方法，能够抑制金属污染，从而通过在器件制造过程中保持足够的吸气能力来减少固态成像传感器的白色缺陷的发生 。 本发明是一种制造外延衬底的方法，包括在含有碳作为掺杂剂的硅衬底上生长外延层以形成外延衬底的步骤; 并且在形成外延衬底之后，对外延衬底施加第一热处理和第二热处理以使构成外延衬底的硅衬底的表层中的氧沉淀密度大于 氧浓度在硅衬底的中心厚度方向沉淀。