Laminated electronic component with trimmable parallel electrodes
    22.
    发明授权
    Laminated electronic component with trimmable parallel electrodes 失效
    具有可调平行电极的层压电子部件

    公开(公告)号:US5952901A

    公开(公告)日:1999-09-14

    申请号:US974003

    申请日:1997-11-19

    Inventor: Kazuhiro Nakano

    Abstract: A laminated electronic component has a structure in which an micro-strip line (MSL) is formed in a first dielectric layer, and a first ground layer and an adjustment pattern layer are formed on the top surface and the base surface of the first dielectric layer, respectively. A second dielectric layer is formed between the adjustment pattern layer and a second ground layer, comb teeth-shaped parallel electrodes having an area larger than that of the MSL is formed at a position opposed to the MSL in the adjustment pattern layer. A slit is formed not to be opposed to the MSL in the second ground layer and to be opposed to the connection points of the parallel electrodes. By emitting a laser beam from the direction of the second ground layer through the slit and the second dielectric layer, and separating the connection points of the parallel electrodes, the capacitance between the MSL and the ground can be adjusted in steps, which increases the resonant frequency of the MSL.

    Abstract translation: 层叠电子部件具有在第一电介质层中形成微带线(MSL)的结构,并且在第一电介质层的顶表面和基面上形成第一接地层和调整图案层 , 分别。 在调整图案层和第二接地层之间形成第二电介质层,在与调整图案层中的MSL相对的位置处形成具有大于MSL的面积的梳齿平行电极。 狭缝形成为不与第二接地层中的MSL相对并且与平行电极的连接点相对。 通过从第二接地层的方向通过狭缝和第二介电层发射激光束,并且分离平行电极的连接点,可以分阶段地调节MSL和地之间的电容,这增加了谐振 MSL的频率。

    Electronic tuning circuit and method of manufacture
    25.
    发明授权
    Electronic tuning circuit and method of manufacture 失效
    电子调谐电路及制造方法

    公开(公告)号:US5457431A

    公开(公告)日:1995-10-10

    申请号:US207172

    申请日:1994-03-08

    Abstract: A method of manufacturing a varactor circuit and a varactor circuit for tuning a dielectric resonator oscillator (DRO). The circuit pattern for the varactor circuit includes a minimum circuit pattern that is common to several circuit patterns for the varactor circuit that compensate for non-linearities in a connected non-linear varactor and provide the desired characteristics for the DRO. Other portions of the several circuit patterns are provided in isolated elements, each of which has a size and shape so that it does not resonate within the DRO's operating frequencies. The isolated elements are selectively connected to the minimum circuit pattern to form a suitable circuit pattern.

    Abstract translation: 制造用于调谐介质谐振器(DRO)的变容二极管电路和变容二极管电路的方法。 用于变容二极管电路的电路图案包括对于变容二极管电路的多个电路图案共同的最小电路图案,其补偿连接的非线性变容二极管中的非线性并为DRO提供期望的特性。 多个电路图案的其它部分被提供在隔离的元件中,每个元件具有尺寸和形状,使得它不在DRO的工作频率内谐振。 隔离元件选择性地连接到最小电路图案以形成合适的电路图案。

    Oscillator using microstrip line having minimized line width and length
    26.
    发明授权
    Oscillator using microstrip line having minimized line width and length 失效
    使用具有最小线宽和长度的微波线的振荡器

    公开(公告)号:US5187451A

    公开(公告)日:1993-02-16

    申请号:US613721

    申请日:1991-01-28

    Abstract: For minimization of a microstrip line and improvement of a Q value, the line length and width of the microstrip line are minimized, and the high frequency trend of the resulting resonant frequency is lowered and corrected to the resonant frequency near the oscillation frequency of an oscillator by connecting an additional capacitance component to the microstrip line. Thereby, the minimization of the microstrip line or the minimization of an oscillation circuit and characteristics equivalent to a dielectric coaxial resonator may be readily obtained. The strip line and the additional capacitance component are made as one piece circuit elements. The microstrip line is connected with a stub such that the stub may be trimmed to adjust the oscillation frequency. A cascode connecting amplifier which lessens the oscillation frequency fluctuation due to load variations is used.

    Abstract translation: 为了最小化微带线和提高Q值,微带线的线长和宽度被最小化,并且所得到的谐振频率的高频趋势被降低并被校正到靠近振荡器的振荡频率的谐振频率 通过将附加的电容组件连接到微带线。 因此,可以容易地获得微带线的最小化或振荡电路的最小化以及与电介质同轴谐振器相当的特性。 带状线和附加电容分量被制成单片电路元件。 微带线与短截线连接,使得短截线可以被修整以调节振荡频率。 使用降低由于负载变化引起的振荡频率波动的共源共栅连接放大器。

    Transistor microwave oscillator having adjustable zone of potential
instability
    27.
    发明授权
    Transistor microwave oscillator having adjustable zone of potential instability 失效
    晶体管微波振荡器具有可调区域的潜在不稳定性

    公开(公告)号:US4990865A

    公开(公告)日:1991-02-05

    申请号:US493919

    申请日:1990-03-14

    Inventor: Michel Martheli

    Abstract: A microwave oscillator having at least one transistor (1), which may be bipolar or otherwise. A tunable reactive circuit (13, 15, 16) suitable for adjusting the transistor's zone of potential instability is inserted in the emitter circuit of the transistor (1) (or in the source circuit of an FET). The reactive circuit comprises a series length of transmission line (13) and a parallel capacitance (15, 16) constituted, at least in part, by a conducting slab (15) of adjustable size.

    Abstract translation: 具有至少一个晶体管(1)的微波振荡器,其可以是双极的或其他的。 适用于调整晶体管的电位不稳定区域的可调谐无功电路(13,15,16)被插入在晶体管(1)的发射极电路(或FET的源极电路中)。 无功电路包括传输线(13)的串联长度和至少部分由可调节尺寸的导电板(15)构成的并联电容(15,16)。

    Extremely-high frequency semiconductor oscillator using transit time
negative resistance diode
    28.
    发明授权
    Extremely-high frequency semiconductor oscillator using transit time negative resistance diode 失效
    极高频半导体振荡器采用通态时间负电阻二极管

    公开(公告)号:US4745374A

    公开(公告)日:1988-05-17

    申请号:US875095

    申请日:1986-06-17

    CPC classification number: H03B9/145 H03B2009/126 H03B2201/014 H03B7/08

    Abstract: An extremely-high frequency semiconductor oscillator which produces a large but substantially noise-free output power with minimized fluctuation of output power for changes in device temperature is realized by using, as its power producing component, a semiconductor transit time diode having a frequency-dependent negative resistance mounted in a cavity resonator of a wave guide means provided with a tuning short at one side of the waveguide means and being designed to perform carrier injection by a combination of tunnel and avalanche phenomena.

    Abstract translation: 通过使用具有频率依赖性的半导体通过时间二极管作为其功率产生部件,实现了产生大而无噪声的输出功率的极高频率半导体振荡器,其中最小化器件温度变化的输出功率波动 负电阻安装在波导装置的空腔谐振器中,波导装置在波导装置的一侧具有调谐短路,并被设计成通过隧道和雪崩现象的组合来执行载流子注入。

    Microwave oscillator injection locked at its fundamental frequency for
producing a harmonic frequency output
    29.
    发明授权
    Microwave oscillator injection locked at its fundamental frequency for producing a harmonic frequency output 失效
    微波振荡器注入锁定在其基频以产生谐波频率输出

    公开(公告)号:US4568890A

    公开(公告)日:1986-02-04

    申请号:US558657

    申请日:1983-12-06

    Inventor: Robert N. Bates

    CPC classification number: H03B9/146 H03B2200/0074 H03B2201/014

    Abstract: A microwave oscillator suitable for millimeter wavelengths comprises a Gunn diode (3) coupled to a waveguide (1) by a resonant-cap structure (5,6). The diode (3) generates microwave energy both at a fundamental frequency f.sub.o which is below the cut-off frequency of the waveguide (1) and at a second harmonic frequency 2f.sub.o above cut-off. To control the generation of microwave energy at 2f.sub.o, energy at f.sub.o is coupled into the waveguide (1) from an adjacent further waveguide (9) above its cut-off, by means of an electric probe (8) extending close to the cap (5). The probe (8) may couple in a locking signal at or close to the free-running value of f.sub.o from another oscillator having better noise performance and electronic tuning, thereby locking 2f.sub.o to twice the frequency of the locking signal, or alternatively may couple to a varactor-tuned cavity resonant at f.sub.o.

    Abstract translation: 适用于毫米波长的微波振荡器包括通过共振盖结构(5,6)耦合到波导(1)的耿氏二极管(3)。 二极管(3)在低于波导(1)的截止频率的基频f 0处产生微波能量,并且在截止频率以上的二次谐波频率2θ处产生微波能量。 为了控制在2fo处的微波能量的产生,在fo处的能量通过靠近盖子延伸的电探针(8)从邻近的其它波导(9)耦合到波导(1)中, 5)。 探头(8)可以以等于或接近于具有更好的噪声性能和电子调谐的另一个振荡器的自由运行值fo的锁定信号耦合,从而将2fo锁定到锁定信号的频率的两倍,或者可以耦合到 一个变容二极管谐振谐振腔。

    Double-mode tuned microwave oscillator
    30.
    发明授权
    Double-mode tuned microwave oscillator 失效
    双模调谐微波振荡器

    公开(公告)号:US4096453A

    公开(公告)日:1978-06-20

    申请号:US798280

    申请日:1977-05-19

    Inventor: Robert G. Rogers

    CPC classification number: H03B5/1847 H03B2201/014

    Abstract: The embedding network of a microwave oscillator comprises three lengths of parallel conductors supported above a ground plane and having odd and even mode short circuits thereon. Two of the conductors are connected to different ones of the electrodes of a bipolar microwave transistor which has a third electrode connected to ground. A load is connected between the third conductor and ground. Physical and electrical characteristics of the network are varied to cause parameters thereof to be desired values which yield maximum output power and oscillation at desired frequencies.

    Abstract translation: 微波振荡器的嵌入网络包括支撑在接地平面上的三个平行导体长度,并且在其上具有奇数和偶数模式的短路。 两个导体连接到具有连接到地的第三电极的双极性微波晶体管的不同电极。 负载连接在第三导体和地之间。 网络的物理和电气特性是变化的,以使其参数成为在期望频率下产生最大输出功率和振荡的期望值。

Patent Agency Ranking