Abstract:
A laminated electronic component has a structure in which an micro-strip line (MSL) is formed in a first dielectric layer, and a first ground layer and an adjustment pattern layer are formed on the top surface and the base surface of the first dielectric layer, respectively. A second dielectric layer is formed between the adjustment pattern layer and a second ground layer, comb teeth-shaped parallel electrodes having an area larger than that of the MSL is formed at a position opposed to the MSL in the adjustment pattern layer. A slit is formed not to be opposed to the MSL in the second ground layer and to be opposed to the connection points of the parallel electrodes. By emitting a laser beam from the direction of the second ground layer through the slit and the second dielectric layer, and separating the connection points of the parallel electrodes, the capacitance between the MSL and the ground can be adjusted in steps, which increases the resonant frequency of the MSL.
Abstract:
A resonator includes a substrate to which are attached trimmable capacitance and inductance portions which together with a varactor and transistor form an oscillator circuit. The substrate mounts orthogonally in a slot on an oscillator board to reduce microphonic effects from a cover that otherwise would degrade the oscillator performance.
Abstract:
In a structure adopted for an FM-CW radar, a corner waveguide for connecting each of transmission and reception antennas to a sensor unit is integrated with a sensor unit case. In a waveguide/strip line converter for converting the transmission mode between the waveguide and the strip lines in the circuits of the sensor unit, a ditch is dug in the inner wall of an opening of the waveguide in order to prevent oozing of conductive adhesive. The strip line board is abutted on the inner wall of the waveguide in order to restrict a length of a projecting portion of a line conductor on the strip line board. By employing an oscillator mixer or a multiplier mixer, the circuitry in the sensor unit can be simplified without using lots of expensive millimeter wave devices. Furthermore, power can be utilized effectively even when a switching radar is off, which enables measurement of an absolute speed. Moreover, cost reduction can be achieved.
Abstract:
A method of manufacturing a varactor circuit and a varactor circuit for tuning a dielectric resonator oscillator (DRO). The circuit pattern for the varactor circuit includes a minimum circuit pattern that is common to several circuit patterns for the varactor circuit that compensate for non-linearities in a connected non-linear varactor and provide the desired characteristics for the DRO. Other portions of the several circuit patterns are provided in isolated elements, each of which has a size and shape so that it does not resonate within the DRO's operating frequencies. The isolated elements are selectively connected to the minimum circuit pattern to form a suitable circuit pattern.
Abstract:
For minimization of a microstrip line and improvement of a Q value, the line length and width of the microstrip line are minimized, and the high frequency trend of the resulting resonant frequency is lowered and corrected to the resonant frequency near the oscillation frequency of an oscillator by connecting an additional capacitance component to the microstrip line. Thereby, the minimization of the microstrip line or the minimization of an oscillation circuit and characteristics equivalent to a dielectric coaxial resonator may be readily obtained. The strip line and the additional capacitance component are made as one piece circuit elements. The microstrip line is connected with a stub such that the stub may be trimmed to adjust the oscillation frequency. A cascode connecting amplifier which lessens the oscillation frequency fluctuation due to load variations is used.
Abstract:
A microwave oscillator having at least one transistor (1), which may be bipolar or otherwise. A tunable reactive circuit (13, 15, 16) suitable for adjusting the transistor's zone of potential instability is inserted in the emitter circuit of the transistor (1) (or in the source circuit of an FET). The reactive circuit comprises a series length of transmission line (13) and a parallel capacitance (15, 16) constituted, at least in part, by a conducting slab (15) of adjustable size.
Abstract:
An extremely-high frequency semiconductor oscillator which produces a large but substantially noise-free output power with minimized fluctuation of output power for changes in device temperature is realized by using, as its power producing component, a semiconductor transit time diode having a frequency-dependent negative resistance mounted in a cavity resonator of a wave guide means provided with a tuning short at one side of the waveguide means and being designed to perform carrier injection by a combination of tunnel and avalanche phenomena.
Abstract:
A microwave oscillator suitable for millimeter wavelengths comprises a Gunn diode (3) coupled to a waveguide (1) by a resonant-cap structure (5,6). The diode (3) generates microwave energy both at a fundamental frequency f.sub.o which is below the cut-off frequency of the waveguide (1) and at a second harmonic frequency 2f.sub.o above cut-off. To control the generation of microwave energy at 2f.sub.o, energy at f.sub.o is coupled into the waveguide (1) from an adjacent further waveguide (9) above its cut-off, by means of an electric probe (8) extending close to the cap (5). The probe (8) may couple in a locking signal at or close to the free-running value of f.sub.o from another oscillator having better noise performance and electronic tuning, thereby locking 2f.sub.o to twice the frequency of the locking signal, or alternatively may couple to a varactor-tuned cavity resonant at f.sub.o.
Abstract:
The embedding network of a microwave oscillator comprises three lengths of parallel conductors supported above a ground plane and having odd and even mode short circuits thereon. Two of the conductors are connected to different ones of the electrodes of a bipolar microwave transistor which has a third electrode connected to ground. A load is connected between the third conductor and ground. Physical and electrical characteristics of the network are varied to cause parameters thereof to be desired values which yield maximum output power and oscillation at desired frequencies.