公开(公告)号：US20020115025A1

公开(公告)日：2002-08-22

申请号：US10134508

申请日：2002-04-30

申请人： Mitsubishi Denki Kabushiki Kaisha

发明人： Seiji Noda ,  Masaki Kuzumoto ,  Izumi Oya ,  Makoto Miyamoto

IPC分类号： G03F007/42

CPC分类号： G03F7/427 ,  G03F7/42

摘要： A method of removing photoresist film with high efficiency of removal and friendliness with the environment while reducing the material consumption and the cost for the ventilation facility, and an apparatus used for the method are provided. Particularly the present invention provides a method of removing a photoresist film by in a sealed system, evenly and continuously or intermittently supplying a photoresist film-removable mixture containing an ozonized gas and a photoresist film-remover to a photoresist film formed on a surface of a substrate through a photoresist film-remover supplier arranged as opposed to the photoresist film. The present invention also provides an apparatus used for the method.

摘要翻译： 提供了一种去除光致抗蚀剂膜的方法，同时降低了通风设备的材料消耗和成本，同时具有高度的去除效率和环境友好性，并且提供了用于该方法的设备。 特别地，本发明提供了一种通过在密封系统中均匀且连续或间歇地将含有臭氧化气体和光致抗蚀剂膜去除剂的光致抗蚀剂膜可除去混合物均匀地或间歇地提供到形成在 通过与光致抗蚀剂膜相对布置的光致抗蚀剂去膜剂供应器来进行基板。 本发明还提供了一种用于该方法的装置。

公开(公告)号：US20020068236A1

公开(公告)日：2002-06-06

申请号：US09976278

申请日：2001-10-15

发明人： Genji Imai

IPC分类号： G03F007/038 ,  G03F007/38 ,  G03F007/42

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/346

摘要： The present invention provides a positive photosensitive resin composition comprising (A) a positive photosensitive resin, (B) a photoacid generator and (C) a photosensitizer which is a benzopyran condensed ring compound capable of increasing photosensitivity to visible light with a wavelength of 480 nm or more; a positive photosensitive dry film prepared by applying the photosensitive resin composition to a surface of support film, followed by drying, to form a photosensitive resin layer; and a method of forming a pattern using the resin composition or the dry film.

摘要翻译： 本发明提供一种正型感光性树脂组合物，其包含（A）正性感光性树脂，（B）光致酸产生剂和（C）能够增加对波长为480nm的可见光的光敏性的苯并吡喃稠环化合物的光敏剂 或者更多; 通过将感光性树脂组合物涂布在支撑膜的表面，然后干燥而制成的正型感光性干膜，形成感光性树脂层; 以及使用树脂组合物或干膜形成图案的方法。

公开(公告)号：US20020055066A1

公开(公告)日：2002-05-09

申请号：US09934520

申请日：2001-08-23

发明人： Shuichi Takamiya

IPC分类号： G03F007/26 ,  G03F007/30 ,  G03F007/42

CPC分类号： G03F7/322 ,  B41N3/06

摘要： An alkaline liquid developer suitable for development of an infrared radiation-presensitized plate for use in making a lithographic printing plate, which developer comprises at least one selected from the group consisting of amphoteric surfactants and cationic surfactants; a method for preparing a lithographic printing plate comprising the steps of imagewise light-exposing to infrared radiation, a presensitized plate for use in making a lithographic printing plate, said presensitized plate having an image-forming layer which comprises an IR-absorbing agent, and developing the light-exposed plate with an alkaline liquid developer comprising at least one selected from the group consisting of amphoteric surfactants and cationic surfactants. The alkaline liquid develper can provide a highly sharp and clear image in a lithographic printing plate without damages to the image areas, simultaneously exhibiting highly development performance to the non-image areas. The alkaline liquid developer of the present invention further inhibits occurrence of insoluble matter originated from a binder resin and/or an IR-absorbing agent, as well as adherence of the insoluble matter to the surface of a plate during processing, while retaining liquid conditions suitable for an alkaline liquid developer, and being capable of providing a stable processing procedure in an extended period.

摘要翻译： 一种适于开发用于制备平版印刷版的红外线辐射敏化板的碱性液体显影剂，该显影剂包含选自两性表面活性剂和阳离子表面活性剂中的至少一种; 一种制备平版印刷版的方法，包括以下步骤：成像曝光到红外辐射，用于制备平版印刷版的预敏化板，所述预敏化板具有包含IR吸收剂的图像形成层，以及 用包含选自两性表面活性剂和阳离子表面活性剂中的至少一种的碱性液体显影剂显影光曝光板。 碱性液体洗脱器可以在平版印刷版中提供高度清晰和清晰的图像，而不损害图像区域，同时对非图像区域表现出高度的显影性能。 本发明的碱性液体显影剂进一步抑制由粘合剂树脂和/或IR吸收剂产生的不溶物质的发生，以及在加工过程中不溶物质粘附到板的表面，同时保持适合的液体条件 用于碱性液体显影剂，并能够在长时间内提供稳定的处理程序。

公开(公告)号：US20020001780A1

公开(公告)日：2002-01-03

申请号：US09794643

申请日：2001-02-26

申请人： Shipley Company, L.L.C.

发明人： Joseph F. Lachowski

IPC分类号： G03F007/42

CPC分类号： G03F7/40 ,  G03F7/32 ,  G03F7/322 ,  G03F7/38 ,  G03F7/422

摘要： Disclosed are methods for the reduction of defects during the manufacture of electronic devices. Also disclosed are electronic devices having reduced numbers of defects.

摘要翻译： 公开了在电子设备的制造期间减少缺陷的方法。 还公开了具有减少的缺陷数量的电子设备。

公开(公告)号：US20010051318A1

公开(公告)日：2001-12-13

申请号：US09865399

申请日：2001-05-25

申请人： Shipley Company, L.L.C. of Marlborough, Massachusetts

发明人： John Cheung-Shing Chu

IPC分类号： G03F007/42

CPC分类号： G03F7/425 ,  Y10T29/49032

摘要： Disclosed are compositions useful for the pretreatment of polymeric material to be removed from substrates, such as electronic devices. The compositions of the present invention are particularly suitable for pretreating polymer residues from plasma etch processes. Also disclosed are methods of removing such pretreated polymeric material.

摘要翻译： 公开了可用于预处理从基底（例如电子器件）中除去的聚合物材料的组合物。 本发明的组合物特别适用于从等离子体蚀刻工艺中预处理聚合物残余物。 还公开了去除这些预处理的聚合物材料的方法。

公开(公告)号：US20040121269A1

公开(公告)日：2004-06-24

申请号：US10323376

申请日：2002-12-18

申请人： Taiwan Semiconductor Manufacturing Co.; Ltd.

发明人： Ai-Sen Liu ,  Chun-Hsien Lin

IPC分类号： G03F007/42 ,  B08B003/04

CPC分类号： B08B7/0021 ,  G03F7/091 ,  G03F7/422 ,  G03F7/425

摘要： A method of removing resinous organic material over a semiconductor process surface including providing a semiconductor wafer having a process surface comprising a resinous organic material; and, exposing the process surface to a supercritical CO2 containing medium further comprising at least a first solvent for a predetermined period to produce a substantially resinous organic material free and undamaged process surface.

摘要翻译： 一种在半导体工艺表面上去除树脂状有机材料的方法，包括提供具有包含树脂有机材料的工艺表面的半导体晶片; 并且将所述工艺表面暴露于含有至少第一溶剂的超临界含CO 2的介质中预定的时间以产生基本上树脂状的无机材料和未损坏的工艺表面。

公开(公告)号：US20040091820A1

公开(公告)日：2004-05-13

申请号：US10694986

申请日：2003-10-29

发明人： Masaharu Nagai ,  Kiyofumi Ogino ,  Teruhisa Nakai ,  Eiji Shioda

IPC分类号： G03F007/30 ,  G03F007/36 ,  G03F007/42

CPC分类号： H01L27/1288 ,  G03F7/022 ,  G03F7/2024 ,  G03F7/425 ,  H01L21/31138 ,  H01L21/32136 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621

摘要： It is an object to provide a technique for removing a resist favorably without leaving residue in the case of using a nonaqueous resist stripper. According to the present invention, in order to achieve the object, when a resist pattern is removed by using the nonaqueous resist stripper, it becomes easier to remove the resist pattern after dry etching or ion doping, by performing exposure treatment on the resist pattern. After a resist pattern is formed from a DNQ-novolac resin type of positive resist composition, the resist pattern is irradiated with light within the range of photosensitive wavelength of the DNQ photosensitizer, thereby removing the resist pattern with the nonaqueous resist stripper.

摘要翻译： 本发明的目的是提供一种在使用非水性抗蚀剂剥离剂的情况下有利地除去抗蚀剂而不留下残留物的技术。 根据本发明，为了达到上述目的，通过使用非水性抗蚀剂剥离剂去除抗蚀剂图案，通过对抗蚀剂图案进行曝光处理，变得更容易在干蚀刻或离子掺杂之后去除抗蚀剂图案。 在由DNQ-酚醛清漆树脂型正性抗蚀剂组合物形成抗蚀剂图案之后，用DNQ光敏剂的感光波长范围内的光照射抗蚀剂图案，从而用非水性抗蚀剂剥离剂去除抗蚀剂图案。

公开(公告)号：US20040043337A1

公开(公告)日：2004-03-04

申请号：US10232635

申请日：2002-08-30

申请人： Lam Research Corporation

发明人： Anthony Chen ,  Gladys So-Wan Lo

IPC分类号： G03F007/42

CPC分类号： H01L21/31133 ,  G03F7/427 ,  H01L21/31138

摘要： H2O vapor is used as a processing gas for stripping photoresist material from a substrate having a patterned photoresist layer previously used as an ion implantation mask, wherein the patterned photoresist layer is defined by a photoresist crust covering a bulk photoresist portion. Broadly speaking, the H2O vapor is demonstrated to more efficiently strip the photoresist material having a cross-linked photoresist crust without causing the photoresist crust to pop and without causing the bulk photoresist to be undercut. Thus, H2O vapor provides a safe, efficient, and economical processing gas for stripping photoresist material having a photoresist crust resulting from an ion implantation process.

摘要翻译： 使用H 2 O蒸气作为用于从具有先前用作离子注入掩模的图案化光致抗蚀剂层的基底剥离光致抗蚀剂材料的处理气体，其中图案化的光致抗蚀剂层由覆盖本体光致抗蚀剂部分的光致抗蚀剂外壳限定。 一般来说，H 2 O蒸气被证明可以更有效地剥离具有交联光致抗蚀剂外壳的光致抗蚀剂材料，而不会使光致抗蚀剂外壳出现，而不会导致本体光致抗蚀剂被切削。 因此，H 2 O蒸气提供了用于剥离由离子注入工艺产生的光致抗蚀剂外壳的光致抗蚀剂材料的安全，有效和经济的处理气体。

公开(公告)号：US20030232287A1

公开(公告)日：2003-12-18

申请号：US10461267

申请日：2003-06-14

发明人： Joseph J. Bango

IPC分类号： G03F007/20 ,  G03F007/26 ,  G03F007/42

CPC分类号： A61F2/142 ,  A61F2/147 ,  G03F7/00

摘要： A method and means of providing stromal repair and improved refractive correction. The invention discloses a technique for creating corneal stromal collagen tissue with fibril diameter and spacing that duplicates the optical transmission and diffusion characteristics of natural corneal collagen. Repair method includes implanting the collagen scaffold during LASIK or other inter-lamellar surgery to improve visual acuity or to preclude the possibility of ectasia.

摘要翻译： 提供基质修复和改善屈光矫正的方法和手段。 本发明公开了一种用于产生具有原纤维直径和间隔的角膜基质胶原组织的技术，其复制天然角膜胶原的光学透射和扩散特征。 修复方法包括在LASIK或其他层间​​手术期间植入胶原支架以改善视力或排除扩张的可能性。

公开(公告)号：US20030215754A1

公开(公告)日：2003-11-20

申请号：US10431083

申请日：2003-05-07

申请人： Shipley Company, L.L.C.

发明人： Daniel E. Lundy ,  Robert K. Barr ,  Edgardo Anzures

IPC分类号： G03F007/32 ,  G03F007/40 ,  G03F007/42 ,  C11D009/00 ,  C03C023/00 ,  C25F001/00 ,  C25F003/30 ,  C25F005/00

CPC分类号： G03F7/322

摘要： A stable concentrate and method to reduce or prevent residue and scum formation on a substrate. The stable concentrate has an alkaline component in combination with another compound in a sufficient amount to reduce or prevent the formation of residue and scum on a substrate. The stable concentrate may be employed in developing processes in the manufacturing of printed wiring boards.

摘要翻译： 稳定的浓缩物和减少或防止底物上残留物和浮渣形成的方法。 稳定的浓缩物具有足够量的碱性组分与另一种化合物的组合，以减少或防止在底物上形成残留物和浮渣。 稳定的浓缩物可用于制造印刷电路板的开发工艺。