Abstract:
A method of aligning elements of an electron beam beam tool such as an electron beam projection lithography tool utilizes a detector such as a pinhole and scintillator over which an image is rastered to provide a real-time display of a projected image at a target plane. A shaping aperture is projected and the detector centered thereon. A reticle sub-field image is then centered on and aligned with the image of the shaping aperture and the compound image thus formed is rotated using deflectors. The compound image is then aligned with movement of a translation device at the target plane using lenses and compound image orientation is corrected by electrical or mechanical rotation of the deflectors. Sub-field size can then be adjusted and any observed further rotation of the compound image may be corrected by reiteration of rotation adjustment with lenses and deflectors, in sequence.
Abstract:
A beam/wafer alignment arrangement has a laser and sensor mounted on the scanning magnet. Direct alignment of the wafer relative to the scanning magnet is determined by reflecting the beam in a specular surface on the wafer holder back to the sensor. Correct alignment of the wafer translation direction is also confirmed from any movement of the reflected light spot on the sensor as the wafer holder is translated up and down. A further sensor is mounted on the beam stop to monitor any misalignment of the process chamber to the collimator magnet, and for checking the location of the travelling Faraday.
Abstract:
A scanning transmission electron microscope (STEM) has an electron source for generating a primary electron beam and an electron illuminating lens system for converging the primary electron beam from the electron source onto a specimen for illumination. An electron deflecting system is provided for scanning the specimen with the primary electron beam. The STEM also has a scattered electron detector for detecting scattered electrons transmitted through the specimen. A projection lens system projects the scattered electrons onto a detection surface of the scattered electron detector. An image displaying device displays the scanning transmission electron microscope image of the specimen using a detection signal from the scattered electron detector. A detection angle changing device for establishes the range of the scattering angle of the scattered electrons detected by the scattered electron detector. This structure enhances the contrast of a desired portion of the specimen under observation for a scanning transmitted image by selective establishment of detection angle ranges for the scattered electron detector.
Abstract:
In a test head for a scanning probe microscope for the contactless testing of integrated electronic circuits, a group of probes produced by three-dimensional additive lithography is disposed on a substrate. The probes are directed at a point situated centrally above the group of probes. The conducting probes as well as the base end of the capacitive probe are joined to printed circuit trace structures on the substrate for connection to a test circuit.
Abstract:
A method for inspecting a plurality of similar structures in the surface of a workpiece includes providing a workpiece having a plurality of regions, each of the regions including at least two different materials, generating an image from each of the regions such that an image contrast between the two materials is enhanced and classifying the images into at least two classes including an acceptable class of images and unacceptable class of images.
Abstract:
Scanning probe microscopy is used to quantitatively characterize structural anisotropy within obliquely deposited metal films. Whereas visual inspection of AFM images (real space or reciprocal space) reveals no obvious structural anisotropy within these gold films, by quantitative analysis of the AFM profiles, subtle structural anisotropy is observed. The quantitative characterization provides a method to estimate the influence of anisotropy on the orientations of supported mesogenic layers.
Abstract:
Variable space charge effects in the imaging portion of a particle beam projection system due to variations in transmitted beam current are compensated with an additional lens appropriately positioned within the imaging system and having a focal length which varies in response to the transmitted beam current.
Abstract:
An electron beam lithography apparatus, which uses a patterned emitter, includes a pyroelectric plate emitter that emits electrons using a patterned metal thin layer formed on the pyroelectric plate as a mask. When the emitter is heated, electrons are emitted from portions of the emitter covered with a patterned dielectric layer, and not from portions of the emitter covered with a patterned metal thin layer, and a pattern of the emitter is thereby projected onto a substrate. To prevent dispersion of emitted electron beams, the electron beams may be controlled by a permanent magnet, an electro-magnet, or a deflector unit. A one-to-one or x-to-one projection of a desired pattern on the substrate is thereby obtained.
Abstract:
An electron beam control device controls an electron beam for use, such as an electron beam exposure device and the like, wherein a track of an electron beam is not adversely Influenced by the amount of magnetic variation occurring influences. The electron beam control device which controls an electron beam for use, such as an electron microscope, an electron beam exposure and the like, wherein a magnetometric sensor for measuring an amount of magnetic variation which influences a track of the electron beam, occurring from surrounding influences, is provided.
Abstract:
An ion implantation system contains, in the ion implantation chamber, a workpiece holder that scans vertically while tilting a wafer at an angle of rotation that is rotated out of a perpendicular orientation with respect to the axis of projection in an ion beam. The implant angle into an implant surface on wafer that is retained by the workpiece holder is adjusted by selective rotation of the workpiece holder about its path of motion. A Faraday cup scans the ion beam along the intended location of the implant surface to form a setup measurement plane. The ion beam quality is adjusted to enhance beam uniformity along the setup plane according to these tilt-angle measurements. A charge neutralizing device, such as a flood gun, is moved in operational alignment with the workpiece.