Abstract:
An electron source provides electrons that are directed through the final lens of an ion optical column to neutralize at least a portion of the accumulated charge on a sample. The invention can optionally be combined with collection of secondary electrons through the final ion lens. A deflector directs the neutralizing electrons onto the ion beam optical axis and deflects the secondary electrons away from the optical axis for detection. For imaging, a high-pass energy filter separates secondary electrons generated from the neutralizing electron beam from secondary electrons generated by the ion beam.
Abstract:
Phase manipulation is used to produce a high contrast electron microscope image. A phase plate is placed at the back focal plane of an objective lens and used to form a differential contrast image.
Abstract:
An apparatus using charged particle beam is provided with means for detecting positional difference between a target position on a chip pattern within an observation visual field of a microscope after displacing a sample stage thereof and a predetermined position within the visual field, means for storing the detection result and means for determining a new displacement target position for displacement to the predetermined position in subsequent observation while taking into account of the positional difference stored previously and the displacement target position used at the time of storage. When observing another wafer on which the same patterns with the same alignment as the previous one are printed or another pattern on the same wafer, the previous sample stage displacement target designation position is also modified while taking into account of the previous observation visual field position deviation which is registered to the corresponding observation position, and the stage is displaced according to the designation position. Thereby, quick and correct displacement of the observation position within an observation visual field can be realized.
Abstract:
A scanning electron microscope comprises: an electron beam source, an electron beam acceleration device for accelerating primary electrons generated by the electron beam source, a deflector 5 for scanning and deflecting the accelerated primary electrons, a magnetic-electrostatic compound objective lens 2, 3 for focusing the scanned and deflected primary electrons onto a specimen 4 mounted on a specimen support, a reflection electron detector 10 for detecting reflection electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen 4, a secondary electron detector 20 for detecting secondary electrons generated from the specimen due to focusing and irradiating the primary electrons onto the specimen 4, and an image display device for displaying a specimen image from detection signals from each detector 10, 20. Moreover, there is provided an aperture 17 around an axis for passing an electron beam and secondary electrons around the axis through the reflection electron detector 10. This gives a: scanning electron microscope device which can separate and detect on an electron beam axis, reflection electrons and secondary electrons from a specimen, with a device of a simple construction.
Abstract:
A combined electron microscope capable of making SEM/STEM images and TEM image correspond to each other precisely. Angles of rotation of SEM/STEM images for matching TEM images to the angles of rotation of the SEM/STEM images, magnifications in TEM, and current values to be supplied into the imaging lenses are stored in a first memory. The magnifications of TEM images and angles of rotation for matching SEM/STEM images to the angles of rotation of TEM images are stored in the second memory. The image or images corrected by the computer are displayed on the display device.
Abstract:
The present invention allows a rapid and easy transformation of coordinates for position designation between first and second observation apparatus having means for designating positions in a sample. The present invention includes the steps of setting at least three observation points in random positions in the sample, setting the sample marked for determining the relative positions of the sample and a sample base on the first and second observation apparatus so as to read the coordinates of the above-mentioned observation points, and determining coordinate transformation formulas by calculating a, b, c, and d of below-described formulas (1) by letting one of the above-mentioned three observation points serve as temporary origins, correcting the coordinates of the other two based on the above-mentioned temporary origins, and substituting the corrected coordinates into the formulas (1). Xn=aXn+bYn, yn=cXn+dYn (1)
Abstract:
A method of removing warp distortions of a thin-piece sample for use in an electron microscope during the formation of the sample. The sample is cut to form a fissure in a stress concentration portion of the sample using an ion beam until the warp distortions disappear. The stress concentration often occurs at a device region having material anisotropy in the sample, and the distortion is removed by forming a fissure in a depth direction of the sample.
Abstract:
A system and method is provided for measuring and determining the resolution of a SEM imaging system employing a crystallographic etched sample with a re-entrant cross-sectional profile. A re-entrant or negative profile is employed because the top-down view seen by the SEM is very sharp due to the fact the edge of the profile has zero width. Therefore, any apparent width seen in the signal is a function of the electron beam width alone. Scanning the beam across the profile provides a signal that moves from a first state to a second state. The time period or sloping portion of the signal from the first state to the second state provides a direct correlation to the electron beam width. Thus, scanning across the sample allows for a calculation of the electron beam width. By scanning across features of different orientations, the shape of the electron beam can be determined. Alternatively, by rotating the electron beam and scanning across the same feature, the shape of the electron beam can be determined. A system can utilize this information to adjust the resolution of the SEM or a display displaying the image.
Abstract:
A highly charged ion based time-of-flight emission microscope has been designed, which improves the surface sensitivity of static SIMS measurements because of the higher ionization probability of highly charged ions. Slow, highly charged ions are produced in an electron beam ion trap and are directed to the sample surface. The sputtered secondary ions and electrons pass through a specially designed objective lens to a microchannel plate detector. This new instrument permits high surface sensitivity (1010 atoms/cm2), high spatial resolution (100 nm), and chemical structural information due to the high molecular ion yields. The high secondary ion yield permits coincidence counting, which can be used to enhance determination of chemical and topological structure and to correlate specific molecular species.
Abstract translation:已经设计了高度带电离子的时间飞行发射显微镜,由于高电荷离子的电离概率较高,因此改善了静电SIMS测量的表面灵敏度。 在电子束离子阱中产生慢,高电荷的离子并且被引导到样品表面。 溅射的二次离子和电子通过特殊设计的物镜通过微通道板检测器。 这种新仪器由于高分子离子产率而允许高表面灵敏度(1010原子/ cm 2),高空间分辨率(100nm)和化学结构信息。 高二次离子产率允许重合计数,其可用于增强化学和拓扑结构的测定并且使特定的分子种类相关联。
Abstract:
A probe chip suitable for observing the vertical walls of steps in a specimen includes a cantilever-like elastic member section extending from a support section, and a probe section at the free end of the elastic member section. The probe section is in the form of a triangular flat plate. Three ridges are terminated at two vertexes at the tip of the probe section. The direction normal to the plane of the probe section section is parallel to the ridge connecting the two points at the tip. These two terminal points at the tip of the probe section act as a virtual probe and interact with the surface of the specimen. The direction normal to the plane of the elastic member section is nonparallel to the direction normal to the plane of the probe section.