Josephson magnetic memory cell with ferrimagnetic layers having orthogonal magnetic polarity

    公开(公告)号:US11444233B1

    公开(公告)日:2022-09-13

    申请号:US17219260

    申请日:2021-03-31

    申请人: Melissa G. Loving

    发明人: Melissa G. Loving

    摘要: A hysteretic magnetic Josephson junction (HMJJ) device is provided that comprises a non-magnetic spacer disposed between a first ferromagnetic layer and a second ferromagnetic layer, a first ferrimagnetic layer having a first side disposed on a side of the first ferromagnetic layer opposite the non-magnetic spacer, and a second ferrimagnetic layer having a first side disposed on a side of the second ferromagnetic layer opposite the non-magnetic spacer. The first ferrimagnetic layer and the second ferrimagnetic layer are formed from a composition that provides orthogonally magnetic responses relative to the magnetic responses of the first ferromagnetic layer and the second ferromagnetic layer. The HMJJ further comprises a first superconducting material layer having a first side disposed on a second side of the first ferromagnetic layer and a second superconducting material layer having a first side disposed on a second side of the second ferromagnetic layer.

    SUPERCONDUCTING CIRCUIT AND QUANTUM COMPUTER

    公开(公告)号:US20220261680A1

    公开(公告)日:2022-08-18

    申请号:US17626967

    申请日:2020-06-26

    申请人: NEC Corporation

    IPC分类号: G06N10/40 H01L27/18 H03K17/92

    摘要: A superconducting circuit and a quantum computer capable of implementing four-body interaction while reducing an amount of hardware are provided. A superconducting circuit (1) includes four superconducting qubit circuits (10), a coupling circuit (20) inductively coupled to the four superconducting qubit circuits (10). Each of the superconducting qubit circuits (10) indicates a qubit by being in a first phase state or a second phase state, when the number of the superconducting qubit circuits (10) in the first phase state among the four superconducting qubit circuits (10) is an even number, an interaction term of Hamiltonian of the superconducting circuit (1) takes a first value, and when the number of the superconducting qubit circuits (10) in the first phase state among the four superconducting qubit circuits (10) is an odd number, the interaction term takes a second value.

    QUBIT READOUT
    24.
    发明申请

    公开(公告)号:US20220181537A1

    公开(公告)日:2022-06-09

    申请号:US17406243

    申请日:2021-08-19

    申请人: IQM Finland Oy

    IPC分类号: H01L39/22 H01L27/18 G06N10/00

    摘要: It is an objective to provide an arrangement and a quantum computing system for qubit readout. According to an embodiment, an arrangement for qubit readout includes at least one qubit and a controllable energy relaxation structure comprising at least one junction. The controllable energy relaxation structure is coupled to the at least one qubit, and is configured to absorb, in response to a control signal, at least one photon from the at least one qubit via photon-assisted tunnelling of a charge through the at least one junction. The arrangement also includes a charge storage configured to store the tunnelled charge and a charge sensing structure coupled to the charge storage. The charge sensing structure is configured to provide a readout signal in response to detecting the tunnelled charge in the charge storage.

    Dielectric holder for quantum devices

    公开(公告)号:US11349060B2

    公开(公告)日:2022-05-31

    申请号:US16905519

    申请日:2020-06-18

    摘要: A device includes a first substrate formed of a first material that exhibits a threshold level of thermal conductivity. The threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates. In an embodiment, the device also includes a second substrate disposed in a recess of the first substrate, the second substrate formed of a second material that exhibits a second threshold level of thermal conductivity. The second threshold level of thermal conductivity is achieved at a cryogenic temperature range in which a quantum circuit operates. In an embodiment, at least one qubit is disposed on the second substrate. In an embodiment, the device also includes a transmission line configured to carry a microwave signal between the first substrate and the second substrate.

    Magnetic Josephson junction system
    26.
    发明授权

    公开(公告)号:US11342491B2

    公开(公告)日:2022-05-24

    申请号:US17035147

    申请日:2020-09-28

    摘要: One example includes a magnetic Josephson junction (MJJ) system. The system includes a first superconducting material layer and a second superconducting material layer each configured respectively as a galvanic contacts. The system also includes a ferrimagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a fixed net magnetic moment at a predetermined operating temperature of the MJJ system. The system also includes a ferromagnetic material layer arranged between the first and second superconducting material layers and that is configured to exhibit a variable magnetic orientation in response to an applied magnetic field. The MJJ system can be configured to store a binary logical value based on a direction of the variable magnetic orientation of the ferromagnetic material layer. The system further includes a spacer layer arranged between the ferromagnetic and the ferrimagnetic material layers.

    SUPERCONDUCTING QUBIT LIFETIME AND COHERENCE IMPROVEMENT VIA BACKSIDE ETCHING

    公开(公告)号:US20210399192A1

    公开(公告)日:2021-12-23

    申请号:US16908704

    申请日:2020-06-22

    摘要: A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.