公开(公告)号：US07679134B1

公开(公告)日：2010-03-16

申请号：US10754515

申请日：2004-01-12

Applicant: Matthew S. Buynoski ,  Judy Xilin An ,  Haihong Wang ,  Bin Yu

Inventor： Matthew S. Buynoski ,  Judy Xilin An ,  Haihong Wang ,  Bin Yu

IPC: H01L29/94

CPC classification number: H01L29/785 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/32139 ,  H01L29/66795

Abstract: A semiconductor device includes a group of fin structures. The group of fin structures includes a conductive material and is formed by growing the conductive material in an opening of an oxide layer. The semiconductor device further includes a source region formed at one end of the group of fin structures, a drain region formed at an opposite end of the group of fin structures, and at least one gate.

Abstract translation: 半导体器件包括一组翅片结构。 翅片结构的组包括导电材料，并且通过在氧化物层的开口中生长导电材料而形成。 半导体器件还包括形成在鳍片结构组的一端处的源极区域，形成在鳍片结构组的相对端处的漏极区域和至少一个栅极。

公开(公告)号：US07589760B2

公开(公告)日：2009-09-15

申请号：US11286651

申请日：2005-11-23

Applicant: Cha Zhang ,  Bin Yu ,  Yong Rui

Inventor： Cha Zhang ,  Bin Yu ,  Yong Rui

IPC: H04N5/232

CPC classification number: H04N7/181 ,  H04N21/4223 ,  H04N21/4316

Abstract: A computer network-based distributed presentation system and process is presented that controls the display of one or more video streams output by multiple video cameras located across multiple presentation sites on display screens located at each presentation site. The distributed presentation system and process provides the ability for a user at a site to customize the screen configuration (i.e., what video streams are display at any one time and in what format) for that site via a two-layer display director module. In the design layer of the module, a user interface is provided for a user to specify display priorities dictating what video streams are to be displayed on the screen over time. These display priorities are then provided to the execution layer of the module which translates them into probabilistic timed automata and uses the automata to control what is displayed on the display screen.

Abstract translation: 提出了一种基于计算机网络的分布式呈现系统和过程，其控制由位于每个呈现站点的显示屏幕上的多个呈现站点上的多个摄像机输出的一个或多个视频流的显示。 分布式呈现系统和过程提供了一个站点用户通过两层显示导演模块定制屏幕配置（即，任何一个时间和以什么格式显示什么视频流）的能力。 在模块的设计层中，为用户提供用户界面，以指定显示优先级，指定在屏幕上随时间显示哪些视频流。 然后将这些显示优先级提供给模块的执行层，将其转换为概率定时自动机，并使用自动机来控制显示屏上显示的内容。

公开(公告)号：USD584316S1

公开(公告)日：2009-01-06

申请号：US29318293

申请日：2008-05-16

Applicant: Hao Yu Sheng ,  Bin Yu ,  Yan Hui Zha

Designer： Hao Yu Sheng ,  Bin Yu ,  Yan Hui Zha

公开(公告)号：US20080281915A1

公开(公告)日：2008-11-13

申请号：US12113203

申请日：2008-04-30

Applicant: Joseph B. Elad ,  Apperson Hunter Johnson ,  Bin Yu ,  Srikanth V. Kallurkar ,  Jonathan Dale

Inventor： Joseph B. Elad ,  Apperson Hunter Johnson ,  Bin Yu ,  Srikanth V. Kallurkar ,  Jonathan Dale

IPC: G06F15/16

CPC classification number: G06Q30/02 ,  G06Q10/10 ,  Y10S707/912

Abstract: The present invention, known as The Collaboration Portal (COPO), relates generally to the field of automated entity, data processing, system control, and data communications, and more specifically to an integrated method, system, and apparatus for providing computer-accessible benefits for communities of users. It provides a framework for provisioning computer-accessible benefits for communities of users, and can efficiently and robustly distribute the processing in behalf of those users over a decentralized network of computers. The field of the invention generally encompasses enabling appropriate and desired communication among communities of users and organizations, and providing information, goods, services, a works, opportunities, and connections among users and organizations.

Abstract translation: 称为协作门户（COPO）的本发明一般涉及自动化实体，数据处理，系统控制和数据通信领域，更具体地涉及用于提供计算机可访问的益处的集成方法，系统和装置 为社区的用户。 它提供了一个为用户社区提供计算机可访问利益的框架，并且可以通过分散的计算机网络来代表这些用户有效且鲁棒地分发处理。 本发明的领域通常包括在用户和组织的社区之间实现适当和期望的通信，以及在用户和组织之间提供信息，商品，服务，作品，机会和连接。

公开(公告)号：US20080227651A1

公开(公告)日：2008-09-18

申请号：US11089436

申请日：2005-03-24

Applicant: Yanxiu Zhou ,  Bin Yu ,  Kalle Levon

Inventor： Yanxiu Zhou ,  Bin Yu ,  Kalle Levon

IPC: C40B30/00 ,  C40B40/06 ,  C40B50/18

CPC classification number: C12Q1/6825 ,  B01J2219/00653 ,  B01J2219/00713 ,  B01J2219/00722 ,  C12Q1/6874 ,  G01N27/48 ,  C12Q2565/607 ,  C12Q2565/501

Abstract: Cyclic voltammetry (CV) may be used with novel sensors for identifying the presence of target sequences complementary to probe sequences. The sensor may include an electrode layer (which is used as a working electrode in a CV system), a conductive polymer layer, and probes immobilized (e.g., via sulfur) on the conductive polymer layer. The conductive polymer layer may be polyaniline, or the like. The probes may be immobilized on the polymer layer using an electro-chemical immobilization technique in the presence of nucleophiles, such as thiol groups for example. The probes may be oligionucleotides. Thus, the sensors may be used for identifying genomic sequence variations and detecting mismatch base pairs, such as single nucleotide polymorphisms (SNPs) for example.

Abstract translation: 循环伏安法（CV）可用于识别存在与探针序列互补的靶序列的新型传感器。 传感器可以包括电极层（其用作CV系统中的工作电极），导电聚合物层和在导电聚合物层上固定（例如通过硫）的探针）。 导电聚合物层可以是聚苯胺等。 探针可以使用电化学固定技术在亲核试剂例如巯基的存在下固定在聚合物层上。 探针可以是寡核苷酸。 因此，传感器可用于鉴定基因组序列变异并检测错配碱基对，例如单核苷酸多态性（SNP）。

公开(公告)号：US07297581B1

公开(公告)日：2007-11-20

申请号：US11130161

申请日：2005-05-17

Applicant: Wiley Eugene Hill ,  Bin Yu

Inventor： Wiley Eugene Hill ,  Bin Yu

IPC: H01L21/338

CPC classification number: H01L27/1108 ,  H01L21/845 ,  H01L27/11 ,  H01L27/1211 ,  H01L29/66803 ,  H01L29/785 ,  Y10S257/903 ,  Y10S438/944

Abstract: A method of doping fins of a semiconductor device that includes a substrate includes forming multiple fin structures on the substrate, each of the fin structures including a cap formed on a fin. The method further includes performing a first tilt angle implant process to dope a first pair of the multiple fin structures with n-type impurities and performing a second tilt angle implant process to dope a second pair of the multiple fin structures with p-type impurities.

Abstract translation: 掺杂包括衬底的半导体器件的散热片的方法包括在衬底上形成多个翅片结构，每个翅片结构包括形成在翅片上的盖。 该方法还包括执行第一倾斜角度注入过程以用n型杂质掺杂第一对多鳍片结构，并执行第二倾斜角度注入工艺以将第二对多鳍片结构与p型杂质掺杂。

公开(公告)号：US20070134778A1

公开(公告)日：2007-06-14

申请号：US11590541

申请日：2006-10-31

Applicant: Christoph Benning ,  Sherrie Sanda ,  Bin Yu

Inventor： Christoph Benning ,  Sherrie Sanda ,  Bin Yu

IPC: C12P7/64 ,  C12N5/04 ,  C12N15/82 ,  C12N1/21

CPC classification number: C12P19/42

Abstract: The present invention is directed to compositions and methods related to the synthesis and modification of uridine-5′-diphospho-sulfoquinovose (UDP-SQ). In particular, the methods of the present invention comprise the utilization of recombinant enzymes from Arabidopsis thaliana, UDP-glucose, and a sulfur donor to synthesize UDP-SQ, and the subsequent modification of UDP-SQ to form compounds including, but not limited to, 6-sulfo-α-D-quinovosyl diaclyglycerol (SQDG) and alkyl sulfoquinovoside. The compositions and methods of the invention provide a more simple, rapid means of synthesizing UDP-SQ, and the subsequent modification of UDP-SQ to compounds including, but not limited to, SQDG.

公开(公告)号：US07183223B1

公开(公告)日：2007-02-27

申请号：US10728909

申请日：2003-12-08

Applicant: Cyrus E. Tabery ,  Srikanteswara Dakshina-Murthy ,  Chih-Yuh Yang ,  Bin Yu

Inventor： Cyrus E. Tabery ,  Srikanteswara Dakshina-Murthy ,  Chih-Yuh Yang ,  Bin Yu

IPC: H01L21/302

CPC classification number: H01L21/32139 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7856

Abstract: Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.

Abstract translation: 提供了用于形成用于半导体器件的触点的方法。 所述方法可以包括在半导体器件上沉积诸如多晶硅，氮化物，氧化物和/或碳材料的各种材料。 所述方法还可以包括形成接触孔并填充接触孔以形成用于半导体器件的接触。

公开(公告)号：US07179692B2

公开(公告)日：2007-02-20

申请号：US10913409

申请日：2004-08-09

Applicant: Bin Yu ,  Shibly S. Ahmed ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang

Inventor： Bin Yu ,  Shibly S. Ahmed ,  Judy Xilin An ,  Srikanteswara Dakshina-Murthy ,  Zoran Krivokapic ,  Haihong Wang

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/785 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66795 ,  H01L29/66803

Abstract: A method of forming a semiconductor device includes forming a fin on an insulating layer, where the fin includes a number of side surfaces, a top surface and a bottom surface. The method also includes forming a gate on the insulating layer, where the gate has a substantially U-shaped cross-section at a channel region of the semiconductor device.

Abstract translation: 形成半导体器件的方法包括在绝缘层上形成翅片，其中鳍片包括多个侧表面，顶表面和底表面。 该方法还包括在绝缘层上形成栅极，其中栅极在半导体器件的沟道区域具有基本上U形的横截面。

公开(公告)号：US07095065B2

公开(公告)日：2006-08-22

申请号：US10633504

申请日：2003-08-05

Applicant: Bin Yu ,  Shibly S. Ahmed ,  Haihong Wang

Inventor： Bin Yu ,  Shibly S. Ahmed ,  Haihong Wang

IPC: H01L29/80

CPC classification number: H01L29/785 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/66795

Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A first device may be formed on the insulating layer, including a first fin. The first fin may be formed on the insulating layer and may have a first fin aspect ratio. A second device may be formed on the insulating layer, including a second fin. The second fin may be formed on the insulating layer and may have a second fin aspect ratio different from the first fin aspect ratio.

Abstract translation: 半导体器件可以包括衬底和形成在衬底上的绝缘层。 第一器件可以形成在绝缘层上，包括第一鳍片。 第一翅片可以形成在绝缘层上，并且可以具有第一翅片长宽比。 第二装置可以形成在绝缘层上，包括第二鳍片。 第二翅片可以形成在绝缘层上，并且可以具有与第一翅片长宽比不同的第二翅片长宽比。