公开(公告)号：US20230244030A1

公开(公告)日：2023-08-03

申请号：US17588470

申请日：2022-01-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Steven M. Shank ,  Takako Hirokawa

IPC: G02B6/12 ,  G02B6/13

CPC classification number: G02B6/12007 ,  G02B6/13 ,  G02B6/29338

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes an edge coupler having a longitudinal axis, a first ring resonator, and a second ring resonator. The first ring resonator has a first center point that is spaced from the longitudinal axis of the edge coupler by a first perpendicular distance. The second ring resonator has a second center point that is spaced from the longitudinal axis of the edge coupler by a second perpendicular distance.

公开(公告)号：US20230155050A1

公开(公告)日：2023-05-18

申请号：US17528385

申请日：2021-11-17

Applicant: GlobalFoundries U.S. Inc.

Inventor： Asif Chowdhury ,  Yusheng Bian

IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804

Abstract: Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.

公开(公告)号：US20230152501A1

公开(公告)日：2023-05-18

申请号：US17525327

申请日：2021-11-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Nicholas A. Polomoff ,  Yusheng Bian ,  Vibhor JAIN

IPC: G02B5/18 ,  G01N27/04

CPC classification number: G02B5/1861 ,  G01N27/041

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a photonic chip security structure and methods of manufacture. The structure includes an optical component over a substrate material, and at least one vertical wall including a reflecting material within a dielectric stack of material and surrounding the optical component.

公开(公告)号：US11644620B2

公开(公告)日：2023-05-09

申请号：US17328048

申请日：2021-05-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Steven M. Shank

IPC: G02B6/27 ,  G02B6/126 ,  G02B6/122 ,  G02B6/125

CPC classification number: G02B6/126 ,  G02B6/125 ,  G02B6/1228 ,  G02B6/276

Abstract: Structures for a polarization rotator and methods of fabricating a structure for a polarization rotator. The structure includes a substrate, a first waveguide core over the substrate, and a second waveguide core over the substrate. The second waveguide core is positioned proximate to the section of the first waveguide core. The second waveguide core is comprised of a material having a refractive index that is reversibly variable in response to a stimulus.

公开(公告)号：US11639895B2

公开(公告)日：2023-05-02

申请号：US17195887

申请日：2021-03-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  Steven M. Shank ,  Anthony K. Stamper ,  John J. Ellis-Monaghan ,  John J. Pekarik ,  Yusheng Bian

IPC: G01N21/64 ,  G01N21/85 ,  H01L31/0232 ,  H01L31/12 ,  H01L31/02

Abstract: A “lab on a chip” includes an optofluidic sensor and components to analyze signals from the optofluidic sensor. The optofluidic sensor includes a substrate, a channel at least partially defined by a portion of a layer of first material on the substrate, input and output fluid reservoirs in fluid communication with the channel, at least a first radiation source coupled to the substrate adapted to generate radiation in a direction toward the channel, and at least one photodiode positioned adjacent and below the channel.

公开(公告)号：US20230128725A1

公开(公告)日：2023-04-27

申请号：US17510910

申请日：2021-10-26

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Francis Afzal

IPC: G02B6/12 ,  G02B6/13 ,  G02B6/122

Abstract: Structures for a wavelength division multiplexing filter and methods of fabricating a structure for a wavelength division multiplexing filter. The structure includes a first waveguide core having a first section and a second section. The first section and the second section have a first notched sidewall and a second notched sidewall opposite to the first notched sidewall. The structure further includes a second waveguide core positioned with a first offset in a first direction relative to the first section and the second section of the first waveguide core and with a second offset in a second direction relative to the first section and the second section of the first waveguide core. The second direction is transverse to the first direction.

公开(公告)号：US20230101580A1

公开(公告)日：2023-03-30

申请号：US17490059

申请日：2021-09-30

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Brett T. Cucci ,  Yusheng Bian ,  Abdelsalam Aboketaf ,  Edward W. Kiewra

IPC: G02B6/122

Abstract: Disclosed are embodiments of a photonic integrated circuit (PIC) structure with a waveguide core having tapered sidewall liner(s) (e.g., symmetric tapered sidewall liners on opposing sides of a waveguide core, asymmetric tapered sidewall liners on opposing sides of a waveguide core, or a tapered sidewall liner on one side of a waveguide core). In some embodiments, the tapered sidewall liner(s) and waveguide core have different refractive indices. In an exemplary embodiment, the waveguide core is a first material (e.g., silicon) and the tapered sidewall liner(s) is/are a second material (e.g., silicon nitride) with a smaller refractive index than the first material. In another exemplary embodiment, the waveguide core is a first compound and the tapered sidewall liner(s) is/are a second compound with the same elements (e.g., silicon and nitrogen) as the first compound but with a smaller refractive index. Also disclosed are method embodiments for forming such a PIC structure.

公开(公告)号：US11609393B1

公开(公告)日：2023-03-21

申请号：US17475689

申请日：2021-09-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur

IPC: G02B6/42

Abstract: Structures including an optical coupler and methods of fabricating a structure including an optical coupler. The structure includes a substrate, a first dielectric layer on the substrate, and an optical coupler having a first grating and a second grating. The first grating has a first plurality of segments positioned in a first level over the first dielectric layer. The second grating has a second plurality of segments positioned in a second level over the first dielectric layer. The second level differs in elevation above the first dielectric layer from the first level. The second plurality of segments are positioned in the second level to overlap with the first plurality of segments of the first grating, and the second plurality of segments comprise a metal. A second dielectric layer is positioned in a vertical direction between the first level and the second level.

公开(公告)号：US11609377B2

公开(公告)日：2023-03-21

申请号：US17306334

申请日：2021-05-03

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Abdelsalam Aboketaf ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13 ,  G02B6/125 ,  G02B6/12

Abstract: Structures for a photodetector or terminator and methods of fabricating a structure for a photodetector or terminator. The structure includes a waveguide core having a longitudinal axis, a pad connected to the waveguide core, and a light-absorbing layer on the pad adjacent to the waveguide core. The light-absorbing layer includes an annular portion, a first taper, and a second taper laterally spaced from the first taper. The first taper and the second taper are positioned adjacent to the waveguide core.

公开(公告)号：US11569268B1

公开(公告)日：2023-01-31

申请号：US17394770

申请日：2021-08-05

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Ryan Sporer ,  George R. Mulfinger ,  Yusheng Bian

IPC: H01L27/12 ,  H01L21/84 ,  H01L27/146 ,  H01L21/762 ,  H01L29/06

Abstract: Structures for a photonics chip that include a fully-depleted silicon-on-insulator field-effect transistor and related methods. A first device region of a substrate includes a first device layer, a first portion of a second device layer, and a buried insulator layer separating the first device layer from the first portion of the second device layer. A second device region of the substrate includes a second portion of the second device layer. The first device layer, which has a thickness in a range of about 4 to about 20 nanometers, transitions in elevation to the second portion of the second device layer with a step height equal to a sum of the thicknesses of the first device layer and the buried insulator layer. A field-effect transistor includes a gate electrode on the top surface of the first device layer. An optical component includes the second portion of the second device layer.