SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE
    313.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE 有权
    具有高反射OHMIC电极的半导体发光器件

    公开(公告)号:US20110031472A1

    公开(公告)日:2011-02-10

    申请号:US12160040

    申请日:2008-03-26

    CPC classification number: H01L33/0079 H01L33/405

    Abstract: A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.

    Abstract translation: 半导体发光器件包括导电衬底上的多层半导体结构。 多层半导体结构包括位于导电衬底之上的第一掺杂半导体层,位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。 该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层,其包括Ag和Ni,Ru,Rh,Pd,Au,Os,Ir和Pt中的至少一种; 加上Zn,Mg Be和Cd中的至少一种; 和多个:W,Cu,Fe,Ti,Ta和Cr。 该器件还包括在反射欧姆接触金属层和导电基底之间的结合层,耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

    METHOD AND APPARATUS FOR TRANSFERRING CONTEXT INFORMATION ON WEB SERVER
    315.
    发明申请
    METHOD AND APPARATUS FOR TRANSFERRING CONTEXT INFORMATION ON WEB SERVER 失效
    在WEB服务器上传输上下文信息的方法和装置

    公开(公告)号:US20100250740A1

    公开(公告)日:2010-09-30

    申请号:US12749031

    申请日:2010-03-29

    CPC classification number: G06F9/54 H04L67/02

    Abstract: A method for transferring context information on a web server that contains a context pool. The method includes: in response to the web server receiving a message, obtaining context information from the message, generating a unique identifier according to a thread for processing the message, associating the context information with the generated unique identifier, and storing the context information and the associated unique identifier in context pool of web server correlatively. In response to a web server obtaining the context information, generating an identifier according to a thread that is executed currently in the web server, and extracting context information for which an associated unique identifier is matched with the generated identifier from the context pool.

    Abstract translation: 一种用于在包含上下文池的Web服务器上传送上下文信息的方法。 该方法包括:响应于web服务器接收消息,从消息获取上下文信息,根据用于处理消息的线程生成唯一标识符,将上下文信息与生成的唯一标识符相关联,并存储上下文信息,以及 Web服务器上下文池中相关联的唯一标识符相关。 响应于Web服务器获得上下文信息,根据当前在web服务器中执行的线程生成标识符,并从上下文池中提取相关联的唯一标识符与生成的标识符匹配的上下文信息。

    METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS
    317.
    发明申请
    METHOD FOR FABRICATING HIGH-POWER LIGHT-EMITTING DIODE ARRAYS 有权
    用于制造大功率发光二极管阵列的方法

    公开(公告)号:US20100176404A1

    公开(公告)日:2010-07-15

    申请号:US12093549

    申请日:2008-03-25

    CPC classification number: H01L33/0079 H01L33/08 H01L33/20 H01L33/44

    Abstract: One embodiment of the present invention provides a method for fabricating a high-power light-emitting diode (LED). The method includes etching grooves on a growth substrate, thereby forming mesas on the growth substrate. The method further includes fabricating indium gallium aluminum nitride (InGaAlN)-based LED multilayer structures on the mesas on the growth substrate, wherein a respective mesa supports a separate LED structure. In addition, the method includes bonding the multilayer structures to a conductive substrate. The method also includes removing the growth substrate. Furthermore, the method includes depositing a passivation layer and an electrode layer above the InGaAlN multilayer structures, wherein the passivation layer covers the sidewalls and bottom of the grooves. Moreover, the method includes creating conductive paths which couple a predetermined number of adjacent individual LEDs, thereby allowing the LEDs to share a common power supply and be powered simultaneously to form a high-power LED array.

    Abstract translation: 本发明的一个实施例提供一种制造大功率发光二极管(LED)的方法。 该方法包括在生长衬底上蚀刻凹槽,从而在生长衬底上形成台面。 该方法还包括在生长衬底上的台面上制造基于铟镓铝(InGaAlN)的LED多层结构,其中相应的台面支撑单独的LED结构。 此外,该方法包括将多层结构粘合到导电基底上。 该方法还包括去除生长底物。 此外,该方法包括在InGaAlN多层结构上沉积钝化层和电极层,其中钝化层覆盖槽的侧壁和底部。 此外,该方法包括产生耦合预定数量的相邻独立LED的导电路径,从而允许LED共享公共电源并且被同时供电以形成大功率LED阵列。

    Semiconductor light-emitting device with electrode for N-polar InGaAIN surface
    318.
    发明授权
    Semiconductor light-emitting device with electrode for N-polar InGaAIN surface 有权
    具有用于N极InGaAIN表面的电极的半导体发光器件

    公开(公告)号:US07705348B2

    公开(公告)日:2010-04-27

    申请号:US12063974

    申请日:2006-10-26

    Abstract: One embodiment of the present invention provides a semiconductor light-emitting device. The semiconductor light-emitting device includes a substrate, a p-type doped InGaAIN layer, an n-type doped InGaAIN layer, and an active layer situated between the p-type doped and n-type doped InGaAIN layers. The semiconductor light-emitting device further includes an n-side Ohmic-contact layer coupled to an N-polar surface of the n-type doped InGaAIN layer. The Ohmic-contact layer comprises at least one of Au, Ni, and Pt, and at least one of group IV elements.

    Abstract translation: 本发明的一个实施例提供一种半导体发光器件。 半导体发光器件包括衬底,p型掺杂的InGaInIn层,n型掺杂的InGaInIn层以及位于p型掺杂和n型掺杂的InGaain层之间的有源层。 半导体发光器件还包括与n型掺杂的InGaain层的N极表面耦合的n侧欧姆接触层。 欧姆接触层包括Au,Ni和Pt中的至少一种以及IV族元素中的至少一种元素。

    Method and system for sensing differential pressure with elastomer
    319.
    发明授权
    Method and system for sensing differential pressure with elastomer 有权
    用弹性体感测差压的方法和系统

    公开(公告)号:US07610811B1

    公开(公告)日:2009-11-03

    申请号:US12250290

    申请日:2008-10-13

    Inventor: Li Wang James Huang

    CPC classification number: G01L9/0072 G01L9/0058

    Abstract: A differential pressure sensor method and system includes a number of elastomer plates, which can be placed with certain distance and sealed in a small tube, wherein the tube can be connected to a number of detection areas. The surface of the elastomers can be covered with a thin film of conductive elastomer as a compliant electrode. The resistance of the compliant electrodes varies with deformation of the elastomer plates and the resistance change can be measured through circuits. A variable capacitor also exists between the elastomer plates due to a sealed space and the compliant electrodes. The elastomer plates deform accordingly when the pressure varies in the detection areas and the variation of the capacitance can be detected through circuits. The pressure difference between the detection areas can then be detected utilizing the variation in resistance and capacitance.

    Abstract translation: 差压传感器方法和系统包括多个可以放置一定距离并被密封在小管中的弹性体板,其中管可以连接到多个检测区域。 弹性体的表面可以用导电弹性体的薄膜作为柔顺电极覆盖。 柔性电极的电阻随着弹性体板的变形而变化,并且可以通过电路测量电阻变化。 由于密封空间和顺应性电极,弹性体板之间也存在可变电容器。 当检测区域中的压力变化时,弹性体板相应地变形,并且可以通过电路检测电容的变化。 然后可以利用电阻和电容的变化来检测检测区域之间的压力差。

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