公开(公告)号：US20030100154A1

公开(公告)日：2003-05-29

申请号：US10285363

申请日：2002-10-30

Applicant: STMicroelectronics S.r.I.

Inventor： Ferruccio Frisina ,  Antonio Pinto ,  Angelo Magri

IPC: H01L021/336

CPC classification number: H01L24/10 ,  H01L23/485 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L29/41741 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

Abstract: An electronic power device of improved structure is fabricated with MOS technology to have a gate finger region and corresponding source regions on either sides of the gate region. This device has a first-level metal layer arranged to independently contact the gate region and source regions, and has a protective passivation layer arranged to cover the gate region. Advantageously, a wettable metal layer, deposited onto the passivation layer and the first-level metal layer, overlies said source regions. In this way, the additional wettable metal layer is made to act as a second-level metal.

Abstract translation: 利用MOS技术制造具有改进结构的电子功率器件，以在栅极区域的两侧具有栅极指状区域和相应的源极区域。 该器件具有布置成独立地接触栅极区域和源极区域的第一级金属层，并且具有覆盖栅极区域的保护性钝化层。 有利地，沉积在钝化层和第一级金属层上的可湿性金属层覆盖在所述源极区域上。 以这种方式，使附加的可湿性金属层作为二级金属。

公开(公告)号：US20030092237A1

公开(公告)日：2003-05-15

申请号：US10325289

申请日：2002-12-20

Applicant: STMicroelectronics S.r.I.

Inventor： Nicola Nastasi ,  Dorotea Arcidiacono ,  Stefano Mazzali

IPC: H01L021/336

CPC classification number: H01L27/11521

Abstract: A method is provided for manufacturing electronic non-volatile memory devices on a semiconductor substrate including a matrix of memory cells having floating gate regions formed on respective active areas and an oxide layer separating the active areas. The method may include forming sidewalls of the floating gate regions that are slanted with respect to a surface of the semiconductor substrate, forming a trench in the oxide layer following the formation of the floating gate regions, and forming a plug of polycrystalline silicon in the trench. The slanted sidewalls of the floating gate regions provide a lead-in for the formation of upper layers.

Abstract translation: 提供了一种用于在半导体衬底上制造电子非易失性存储器件的方法，该半导体衬底包括具有形成在各自的有源区上的浮动栅极区域和分离有源区域的氧化物层的存储器单元的矩阵。 该方法可以包括形成相对于半导体衬底的表面倾斜的浮动栅极区域的侧壁，在形成浮动栅极区域之后在氧化物层中形成沟槽，以及在沟槽中形成多晶硅插塞 。 浮动栅极区域的倾斜侧壁提供用于形成上层的引入。

公开(公告)号：US20030080955A1

公开(公告)日：2003-05-01

申请号：US10260717

申请日：2002-09-27

Applicant: STMicroelectronics S.r.I.

Inventor： Francesco Pulvirenti ,  Gregorio Bontempo

IPC: G09G005/00

CPC classification number: H02M3/073 ,  G09G3/36 ,  G09G3/3696 ,  G09G2330/02 ,  G09G2330/021 ,  H02M2001/0022 ,  Y10T307/747

Abstract: A regulated voltage-boosting device provides a charge-pump circuit, which has an input terminal receiving a first voltage and an output terminal supplying a second voltage higher than the first voltage. The regulated voltage-boosting device provides a plurality of voltage-boosting stages that can be selectively activated and deactivated. The regulated voltage-boosting device provides an automatic-selection circuit for activating a number of voltage-boosting stages which is correlated to the first voltage and to the second voltage.

Abstract translation: 稳压升压装置提供电荷泵电路，其具有接收第一电压的输入端和提供高于第一电压的第二电压的输出端。 调节升压装置提供可以选择性地激活和去激活的多个升压级。 调节升压装置提供一个自动选择电路，用于激活与第一电压和第二电压相关的多个升压级。

公开(公告)号：US20030067032A1

公开(公告)日：2003-04-10

申请号：US10267033

申请日：2002-10-07

Applicant: STMicroelectronics S.r.I.

Inventor： Paolo Caprara ,  Claudio Brambilla ,  Manlio Sergio Cereda

IPC: H01L021/8238 ,  H01L029/792 ,  H01L029/76 ,  H01L021/336 ,  H01L031/062 ,  H01L031/119 ,  H01L031/113 ,  H01L029/94

CPC classification number: H01L27/11568 ,  H01L27/115 ,  H01L29/792 ,  H01L29/7923

Abstract: A process for manufacturing a dual charge storage location electrically programmable memory cell that includes the steps of forming a central insulated gate over a semiconductor substrate; forming physically separated charge-confining layers stack portions of a dielectric-charge trapping material-dielectric layers stack at the sides of the central gate, the charge trapping material layer in each charge-confining layers stack portion forming a charge storage element; forming side control gates over each of the charge-confining layers stack portions; forming memory cell source/drain regions laterally to the side control gates; and electrically connecting the side control gates to the central gate. Each of the charge-confining layers stack portions at the sides of the central gate is formed with an nullLnull shape, with a base charge-confining layers stack portion lying on the substrate surface and an upright charge-confining layers stack portion lying against a respective side of the insulated gate.

Abstract translation: 一种用于制造双电荷存储位置电可编程存储单元的方法，包括在半导体衬底上形成中心绝缘栅极的步骤; 形成物理上分离的电荷限制层，堆叠在中心栅极侧的介质电荷捕获材料 - 电介质层堆叠部分，每个电荷限制层堆叠部分中的电荷捕获材料层形成电荷存储元件; 在每个电荷限制层堆叠部分上形成侧面控制栅极; 在侧控制门侧面形成存储单元源极/漏极区; 并将侧面控制门电连接到中央门。 在中心栅极侧面的电荷限制层堆叠部分中的每一个形成为“L”形，基底电荷限制层堆叠部分位于衬底表面上，并且垂直电荷限制层堆叠部分抵靠 绝缘门的相应侧。

公开(公告)号：US20030049895A1

公开(公告)日：2003-03-13

申请号：US10199964

申请日：2002-07-18

Applicant: STMicroelectronics S.r.I.

Inventor： Gianfranco Cerofolini ,  Giuseppe Ferla

IPC: H01L021/336 ,  H01L051/40 ,  H01L021/8234 ,  H01L021/8244

CPC classification number: H01L21/28167 ,  H01L29/51

Abstract: A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.

Abstract translation: 公开了一种通过电介质栅极氧化物制造具有可控和可调制传导路径的MOS晶体管的方法，其中晶体管结构包括在两个硅板之间形成的电介质氧化物层，并且其中硅板全部悬垂在氧化物层周围以限定 具有基本上矩形横截面形状的底切。 该方法包括以下步骤：将硅板的表面化学改变成在底切中提供的不同的官能团与其余表面中的不同的官能团; 并且将底切中提供的官能团选择性地与具有可逆还原中心和分子长度基本上等于底切宽度的有机分子反应，从而与有机分子的每个末端建立共价键。

公开(公告)号：US20030034766A1

公开(公告)日：2003-02-20

申请号：US10197237

申请日：2002-07-15

Applicant: STMicroelectronics S.r.I.

Inventor： Alessandro Zafarana ,  Claudia Castelli

IPC: G05F001/618

CPC classification number: H02M3/1584 ,  H02M2001/0009

Abstract: A voltage/current controller device, particularly for interleaving switching regulators, comprises: a DC/DC converter having a plurality of modules, with each module including a drive transistor pair connected in series between first and second supply voltage references, a current sensor connected to one transistor in the pair, and a current read circuit connected to the sensor. Advantageously, the read circuit comprises a transconductance amplifier connected across the current sensor to sense a voltage signal related to a load current being applied to each module, the transconductance amplifier reading the voltage signal with the transistor in the conducting state.

公开(公告)号：US20030030130A1

公开(公告)日：2003-02-13

申请号：US10208258

申请日：2002-07-29

Applicant: STMicroelectronics S.r.I.

Inventor： Luca Pividori

IPC: H01L029/06

CPC classification number: H01L21/304 ,  B28D5/0011 ,  H01L21/78

Abstract: A semiconductor device including an electronic component and an edge region delimited by a side surface. The device is formed in a substrate of semiconductor material overlaid by a plurality of superficial layers which form, on top of the edge region, a stack of insulating layers. A first groove extends in the stack of insulating layers near the electronic component. A second groove extends in the stack of insulating layers between the first groove and the side surface and operates as an element of mechanical decoupling which blocks any possible delayering of the superficial layers during cutting of the wafer.

Abstract translation: 一种包括电子部件和由侧面限定的边缘区域的半导体器件。 该器件形成在由多个表面层覆盖的半导体材料的衬底中，该多个表面层在边缘区域的顶部形成绝缘层堆叠。 第一凹槽在靠近电子部件的绝缘层堆叠中延伸。 第二凹槽在第一凹槽和侧表面之间的绝缘层堆叠中延伸，并且作为机械去耦元件而工作，其阻止在切割晶片期间表面层的任何可能的延迟。

公开(公告)号：US20030020425A1

公开(公告)日：2003-01-30

申请号：US10205064

申请日：2002-07-25

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Giulio Ricotti

IPC: G05B011/28

CPC classification number: G05B11/28 ,  H02P6/34

Abstract: Herein described is a device for driving electric motors comprising a power stage with a variable duty-cycle coupled to a supply voltage. The power stage is suitable for driving the electric motor. The driving device comprises a circuit that is capable of raising the value of the input voltage of the power stage above the induced counter electromotive voltage of the motor in certain periods of time and a control device capable of activating said circuit in reply to values of the induced counter electromotive voltage greater than or comparable with the supply voltage.

Abstract translation: 这里描述了一种用于驱动电动机的装置，其包括具有耦合到电源电压的可变占空比的功率级。 动力级适用于驱动电动机。 驱动装置包括能够在某段时间内将功率级的输入电压的值提高到电动机的感应反电动势以上的电路，以及能够响应于电压的值而启动所述电路的控制装置 感应反电动势大于或等于电源电压。

公开(公告)号：US20020195882A1

公开(公告)日：2002-12-26

申请号：US10236256

申请日：2002-09-04

Applicant: STMicroelectronics S.r.I.

Inventor： Filippo Marino

IPC: H02J009/00

CPC classification number: H02M1/32 ,  Y10T307/625 ,  Y10T307/826 ,  Y10T307/858 ,  Y10T307/865

Abstract: The method of a protection circuit includes a reference voltage source and at least one circuit which are connected together via a switch. A memory element is connected to the input of the circuit, downstream of the switch. The switch is temporarily opened by a control signal generated by a monostable circuit when detecting switching of power elements belonging to an electronic device embedding the protection circuit. When the switch is open, the memory element supplies the circuit with the reference voltage previously stored. In this way, switching of the power element that might cause noise on the reference voltage cannot disturb the circuit and thereby cannot cause a faulty operation of the latter.

Abstract translation: 保护电路的方法包括参考电压源和经由开关连接在一起的至少一个电路。 存储器元件连接到电路的输入端，在开关的下游。 当检测属于嵌入保护电路的电子设备的功率元件的切换时，开关由单稳电路产生的控制信号暂时打开。 当开关断开时，存储元件为电路提供预先存储的参考电压。 以这种方式，可能导致噪声的功率元件在参考电压上的切换不会干扰电路，从而不会导致电路的故障。

公开(公告)号：US20020189354A1

公开(公告)日：2002-12-19

申请号：US10128133

申请日：2002-04-23

Applicant: STMicroelectronics S.r.I.

Inventor： Guido Spinola Durante ,  Sarah Zerbini ,  Simone Gardella

IPC: G01P015/08

CPC classification number: G01C19/5747

Abstract: The gyroscope is formed by a driving system including a driving mass having an open concave shape; an accelerometer including a sensing mass and comprising mobile sensing electrodes; a linkage connecting the driving mass to the sensing mass. The sensing mass is surrounded on three sides by the driving mass and has a peripheral portion not facing the sensing mass. The mobile sensing electrodes extend integral with the sensing mass from the peripheral portion not facing the driving mass and are interleaved with fixed sensing electrodes. Thereby, there are no passing electrical connections extending below the sensing mass. Moreover the linkage includes springs placed equidistant from the center of gravity of the accelerometer, and the gyroscope is anchored to the substrate with anchoring springs placed equidistant from the center of gravity of the assembly formed by the driving system and by the accelerometer.

Abstract translation: 陀螺仪由包括具有开口凹形状的驱动块的驱动系统形成; 包括感测质量并包括移动感测电极的加速度计; 将驱动质量与感测质量连接的连杆。 感测质量被驱动质量块三面围绕，并且具有不面向感测质量的周边部分。 移动感测电极与来自不面向驱动质量块的周边部分的感测质量一体地延伸并且与固定感测电极交错。 因此，在感测质量下方没有延伸的电连接。 此外，联动装置包括与加速度计的重心等距离的弹簧，并且陀螺仪通过与由驱动系统和加速度计形成的组件的重心等距离的锚定弹簧锚定到基底。