公开(公告)号：US20160301325A1

公开(公告)日：2016-10-13

申请号：US14956543

申请日：2015-12-02

Applicant: STMicroelectronics S.r.l. ,  STMicroelectronics (Tours) SAS

Inventor： Laurent Gonthier ,  Roberto Larosa ,  Giulio Zoppi

IPC: H02M7/06 ,  G05B19/10

CPC classification number: H02M7/06 ,  G05B19/10 ,  G05B2219/21013 ,  H02M1/08 ,  H02M1/36 ,  H02M7/062 ,  H02M7/1623

Abstract: An AC/DC converter includes a first terminal and a second terminal to receive an AC voltage and a third terminal and a fourth terminal to deliver a DC voltage. A rectifying bridge is provided in the converter. A controllable switching or rectifying element has a control terminal configured to receive a control current. A first switch is coupled between a supply voltage and the control terminal to inject the control current. A second switch is coupled between the control terminal and a reference voltage to extract the control current. The first and second switches are selectively actuated by a control circuit.

Abstract translation: AC / DC转换器包括第一端子和第二端子以接收AC电压，第三端子和第四端子用于输送DC电压。 整流桥提供在转换器中。 可控开关或整流元件具有被配置为接收控制电流的控制端。 第一开关耦合在电源电压和控制端之间以便注入控制电流。 第二开关耦合在控制端和参考电压之间以提取控制电流。 第一和第二开关由控制电路选择性地致动。

公开(公告)号：US09460960B2

公开(公告)日：2016-10-04

申请号：US14838976

申请日：2015-08-28

Applicant: STMicroelectronics (Tours) SAS ,  Centre National de la Recherche Scientifique—CNRS

Inventor： Kilian Piettre ,  Pierre Fau ,  Jeremy Cure ,  Bruno Chaudret

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/288

CPC classification number: H01L21/76843 ,  C23C18/08 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1275 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/1653 ,  C25D7/00 ,  H01L21/288 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A surface of a silicon substrate is coated with a silicon oxide layer. A manganese silicate layer is then deposited on the silicon oxide layer using a process of performing at least one step of dipping the substrate into a manganese amidinate solution. A copper layer is then deposited on the manganese silicate layer using a process of performing a step of dipping the substrate into a copper amidinate solution. An anneal is performed to stabilize one or both of the manganese silicate layer and copper layer.

Abstract translation: 硅衬底的表面涂覆有氧化硅层。 然后使用进行至少一个步骤的方法将硅酸锌层沉积在氧化硅层上，该步骤将基底浸入锰脒溶液中。 然后使用执行将衬底浸入铜脒溶液的步骤的方法将铜层沉积在硅酸锰层上。 进行退火以稳定硅酸锰层和铜层中的一个或两个。

公开(公告)号：US20160247904A1

公开(公告)日：2016-08-25

申请号：US15142070

申请日：2016-04-29

Applicant: STMICROELECTRONICS (TOURS) SAS ,  UNIVERSITE FRANCOIS RABELAIS

Inventor： SAMUEL MENARD ,  Gael Gautier

IPC: H01L29/74 ,  H01L29/167 ,  H01L29/66 ,  H01L29/06 ,  H01L29/747

CPC classification number: H01L29/7424 ,  H01L29/0619 ,  H01L29/167 ,  H01L29/66386 ,  H01L29/747

Abstract: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.

Abstract translation: 一种高电压垂直功率元件，包括第一导电类型的硅衬底和从硅衬底的上表面延伸到硅衬底中的第二导电类型的第一半导体层，其中所述元件周边包括：多孔硅 环从上表面延伸到深度比第一层深的硅衬底; 以及从硅表面的下表面延伸到多孔硅环的第二导电类型的掺杂环。

公开(公告)号：US09356310B2

公开(公告)日：2016-05-31

申请号：US13765255

申请日：2013-02-12

Applicant: STMicroelectronics (Tours) SAS

Inventor： Vincent Jarry

IPC: H01M10/04 ,  H01M6/00 ,  H01M2/04 ,  H01M2/30 ,  H01M6/40 ,  H01M10/0585

CPC classification number: H01M6/40 ,  H01M2/0404 ,  H01M2/0469 ,  H01M2/30 ,  H01M6/00 ,  H01M10/02 ,  H01M10/0436 ,  H01M10/0585 ,  Y10T29/49108 ,  Y10T29/49114 ,  Y10T29/49115

Abstract: A method for forming a microbattery including, on a surface of a first substrate, one active battery element and two contact pads, this method including the steps of: a) forming, on a surface of a second substrate, two contact pads with a spacing compatible with the spacing of the pads of the first substrate; and b) arranging the first substrate on the second substrate so that the surfaces face each other and that the pads of the first substrate at least partially superpose to those of the second substrate, where a portion of the pads of the second substrate is not covered by the first substrate.

Abstract translation: 一种形成微电池的方法，包括在第一衬底的表面上具有一个有源电池元件和两个接触焊盘，该方法包括以下步骤：a）在第二衬底的表面上形成两个具有间隔的接触焊盘 与第一衬底的焊盘的间隔相适应; 以及b）将所述第一基板布置在所述第二基板上，使得所述表面彼此面对，并且所述第一基板的所述焊盘至少部分地与所述第二基板的所述焊盘重叠，其中所述第二基板的一部分焊盘不被覆盖 通过第一衬底。

公开(公告)号：US20160064278A1

公开(公告)日：2016-03-03

申请号：US14838976

申请日：2015-08-28

Applicant: STMicroelectronics (Tours) SAS ,  Centre National de la Recherche Scientifique - CNRS

Inventor： Kilian Piettre ,  Pierre Fau ,  Jeremy Cure ,  Bruno Chaudret

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76843 ,  C23C18/08 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1275 ,  C23C18/1283 ,  C23C18/1295 ,  C23C18/1653 ,  C25D7/00 ,  H01L21/288 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A surface of a silicon substrate is coated with a silicon oxide layer. A manganese silicate layer is then deposited on the silicon oxide layer using a process of performing at least one step of dipping the substrate into a manganese amidinate solution. A copper layer is then deposited on the manganese silicate layer using a process of performing a step of dipping the substrate into a copper amidinate solution. An anneal is performed to stabilize one or both of the manganese silicate layer and copper layer.

Abstract translation: 硅衬底的表面涂覆有氧化硅层。 然后使用进行至少一个步骤的方法将硅酸锌层沉积在氧化硅层上，该步骤将基底浸入锰脒溶液中。 然后使用执行将衬底浸入铜脒溶液的步骤的方法将铜层沉积在硅酸锰层上。 进行退火以稳定硅酸锰层和铜层中的一个或两个。

公开(公告)号：US20160027907A1

公开(公告)日：2016-01-28

申请号：US14731563

申请日：2015-06-05

Applicant: STMicroelectronics (Tours) SAS

Inventor： Samuel Menard ,  Dalaf Ali

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/0638

Abstract: A bidirectional switch is formed in a semiconductor substrate of a first conductivity type. The switch includes first and second thyristors connected in antiparallel extending vertically between front and rear surfaces of the substrate. A vertical peripheral wall of the second conductivity type connects the front surface to the rear surface and surrounds the thyristors. On the front surface, in a ring-shaped region of the substrate separating the vertical peripheral wall from the thyristors, a first region of the first conductivity type is provided having a doping level greater than the substrate and having the shape of a ring-shaped band portion partially surrounding the first thyristor and stopping at the level of the adjacent region between the first and second thyristors.

Abstract translation: 在第一导电类型的半导体衬底中形成双向开关。 该开关包括第一和第二晶闸管，其在基板的前表面和后表面之间垂直地反向平行地延伸。 第二导电类型的垂直周壁将前表面连接到后表面并围绕晶闸管。 在前表面上，在将垂直周壁与晶闸管分离的衬底的环形区域中，提供第一导电类型的第一区域，其具有大于衬底的掺杂水平，并且具有环形形状 带部分部分地围绕第一晶闸管并且在第一和第二晶闸管之间的相邻区域的水平处停止。

公开(公告)号：US20150364802A1

公开(公告)日：2015-12-17

申请号：US14724168

申请日：2015-05-28

Applicant: STMicroelectronics (Tours) SAS

Inventor： Emilien Bouyssou ,  Delphine Guy-Bouyssou ,  Frederic Cantin

IPC: H01M16/00 ,  H01M10/0525

CPC classification number: H01M16/00 ,  H01M4/382 ,  H01M4/525 ,  H01M10/052 ,  H01M10/0525 ,  H01M10/0562 ,  H01M10/4207 ,  H01M2200/00 ,  H02J7/0031 ,  H02J2007/004

Abstract: An assembly of batteries includes a first battery and a second battery electrically connected in parallel. The first battery is configured to deliver a battery capacity in a first power supply voltage range. The second battery is configured to deliver a battery capacity in a second voltage range. An upper limit of the second voltage range is set between upper and lower limits of the first voltage range. In an operating system, if supplied battery power falls below a threshold, the parallel connected first and second batteries are disconnected from the load.

Abstract translation: 电池组件包括并联电连接的第一电池和第二电池。 第一电池被配置为在第一电源电压范围内传送电池容量。 第二电池被配置为在第二电压范围内传送电池容量。 在第一电压范围的上限和下限之间设定第二电压范围的上限。 在操作系统中，如果提供的电池电量低于阈值，并联的第一和第二电池与负载断开连接。

公开(公告)号：US20150325878A1

公开(公告)日：2015-11-12

申请号：US14673547

申请日：2015-03-30

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Severin Larfaillou ,  Delphine Guy-Bouyssou

IPC: H01M10/052 ,  H01M10/44 ,  H02J7/00 ,  H01M10/0585 ,  H01M4/38 ,  H01M4/40 ,  H01M10/0562 ,  H01M4/134

CPC classification number: H01M10/052 ,  H01M4/0445 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/38 ,  H01M4/382 ,  H01M4/405 ,  H01M10/0562 ,  H01M10/0585 ,  H01M10/44 ,  H02J7/007

Abstract: Circuits and methods for putting into service a lithium ion battery including a first charging step under a current of at most a few tens of microamperes per square centimeter for a plurality of hours.

Abstract translation: 锂离子电池投入使用的电路和方法，该锂离子电池包括在每平方厘米最多几十微安的电流下的第一充电步骤多个小时。

公开(公告)号：US20150207356A1

公开(公告)日：2015-07-23

申请号：US14602015

申请日：2015-01-21

Applicant: STMicroelectronics (Tours) SAS

Inventor： Laurent MOINDRON ,  Sylvain CHARLEY ,  Jérôme HEURTIER

IPC: H02J7/00

CPC classification number: H02J7/0072 ,  G01R27/2605 ,  H01Q5/335 ,  H02J7/0052 ,  H02J7/345 ,  H03J3/04

Abstract: A circuit for controlling a capacitor having a capacitance settable by biasing, including at least one terminal for receiving a digital set point value depending on the value desired for the capacitance, a circuit for determining a drift of the capacitance with respect to a nominal value, and a circuit of application of a correction to said digital set point value, depending on the determined drift.

Abstract translation: 一种用于控制电容器的电路，所述电容器具有通过偏置可设置的电容，所述电容器包括至少一个端子，用于接收取决于所述电容所需的值的数字设定值;电路，用于确定电容相对于标称值的漂移， 以及根据所确定的漂移对所述数字设定点值进行校正的电路。

公开(公告)号：US20150137616A1

公开(公告)日：2015-05-21

申请号：US14549358

申请日：2014-11-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Sylvain CHARLEY

IPC: H01G7/00

CPC classification number: H01G7/00 ,  H03H11/481 ,  H03H11/483

Abstract: A circuit for controlling a capacitor having a capacitance adjustable by biasing, including an amplifier for delivering a D.C. bias voltage, having a feedback slowed down by a resistive and capacitive cell.

Abstract translation: 一种用于控制电容器的电路，该电容器具有可通过偏置调整的电容，包括用于传送直流偏置电压的放大器，具有由电阻和电容单元减慢的反馈。