Field emission cold cathode and method for manufacturing the same
    332.
    发明授权
    Field emission cold cathode and method for manufacturing the same 失效
    场致发射冷阴极及其制造方法

    公开(公告)号:US5493173A

    公开(公告)日:1996-02-20

    申请号:US255723

    申请日:1994-06-07

    Applicant: Hironori Imura

    Inventor: Hironori Imura

    CPC classification number: H01J9/025 H01J3/022

    Abstract: A field emission cold cathode includes a conductive substrate, an insulating layer formed on the substrate and having plural cavities each for receiving an emitter, a gate electrode for applying a high electric field to the tips of emitters. An annular portion of the gate electrode defines an opening of a corresponding cavity is located at a distance from the substrate smaller than the distance between an elevated middle portion of the gate electrode and the substrate. Parasitic capacitance between the gate electrode and the cold cathode including the substrate and the emitter is reduced due to the large distance between the elevated middle portion of the gate electrode and the substrate. Between the elevated middle portion and the substrate, a second insulating layer or a gap is disposed. The field emission cold cathode can function in a high frequency range while fabricating conical emitters with a small height due to the small distance between the annular portions and the substrate.

    Abstract translation: 场致发射冷阴极包括导电基板,形成在基板上的绝缘层,具有用于接收发射极的多个空腔,用于向发射极的顶端施加高电场的栅电极。 栅电极的环形部分限定相应空腔的开口位于离衬底一定距离处,小于栅极电极的升高的中间部分和衬底之间的距离。 包括基板和发射极在内的栅电极和冷阴极之间的寄生电容由于栅电极的高中间部分与基板之间的距离较大而降低。 在升高的中间部分和基底之间设置有第二绝缘层或间隙。 由于环形部分和基板之间的距离很小,场致发冷阴极可以在高频范围内起作用,同时制造具有小高度的圆锥形发射体。

    Lateral field emitter device and method of manufacturing same
    334.
    发明授权
    Lateral field emitter device and method of manufacturing same 失效
    侧面场发射器装置及其制造方法

    公开(公告)号:US5445550A

    公开(公告)日:1995-08-29

    申请号:US173739

    申请日:1993-12-22

    CPC classification number: H01J1/3042 H01J3/022 H01J2329/00

    Abstract: Lateral luminescent field emitter devices for use in flat panel displays and a method of manufacturing are described. The device comprises a flat substrate, an anode disposed on the substrate, and a cathode disposed on the substrate, the cathode providing an electron emission surface capable of emitting electrons laterally across a gap to a major portion of an adjacent surface of the anode.

    Abstract translation: 描述了用于平板显示器的侧面发光场发射器件和制造方法。 该器件包括平坦的衬底,设置在衬底上的阳极和设置在衬底上的阴极,阴极提供能够横向跨过阳极的相邻表面的主要部分的间隙发射电子的电子发射表面。

    Field emission device with integrally formed electrostatic lens
    335.
    发明授权
    Field emission device with integrally formed electrostatic lens 失效
    具有整体形成的静电透镜的场发射装置

    公开(公告)号:US5430347A

    公开(公告)日:1995-07-04

    申请号:US93134

    申请日:1993-07-16

    CPC classification number: H01J3/022 H01J9/025

    Abstract: A FED including an integrally formed electrostatic lens with an aperture having a diameter which is dis-similar from an aperture of the FED gate to effect a reduction in electron beam cross-section. By forming the FED with an electrostatic lens aperture of increased diameter relative to the diameter of the gate aperture a reduced sensitivity with respect to lens thickness and location is realized as is a relaxation of electrostatic lens fabrication constraints. Image display devices employing such integrally formed electrostatic lens systems may be provided wherein pixel cross-sections as small as two microns are realized.

    Abstract translation: FED包括一体形成的静电透镜,其具有与FED栅极的孔径不相似的直径的孔,以实现电子束横截面的减小。 通过以相对于栅极孔径的直径增加的直径的静电透镜孔形成FED,实现了相对于透镜厚度和位置的降低的灵敏度,这是静电透镜制造约束的松弛。 可以提供采用这种整体形成的静电透镜系统的图像显示装置,其中实现了小至2微米的像素横截面。

    Semiconductor vacuum device with planar structure
    336.
    发明授权
    Semiconductor vacuum device with planar structure 失效
    具有平面结构的半导体真空装置

    公开(公告)号:US5404025A

    公开(公告)日:1995-04-04

    申请号:US51356

    申请日:1993-04-23

    Applicant: Keizo Yamada

    Inventor: Keizo Yamada

    CPC classification number: H01J3/022 H01J21/105

    Abstract: A semiconductor vacuum device including a semiconductor substrate 3, an insulator film 2 formed on the substrate 3, and a single crystal semiconductor film 1 formed on the insulator film 2. The single crystal semiconductor film 1 has a first and a second tapered edge opposite to one another but spaced apart over a gap formed in the insulator film 2. The first tapered edge acts 6 as a cathode and the second tapered edge acts as a gate 7, the substrate 1 acting as an anode into which said electrons emitted from the cathode above.

    Abstract translation: 包括半导体基板3,形成在基板3上的绝缘膜2和形成在绝缘膜2上的单晶半导体膜1的半导体真空装置。单晶半导体膜1具有与第一和第二锥形边缘相对的第一和第二锥形边缘 彼此间隔开,并隔开形成在绝缘膜2中的间隙。第一锥形边缘作为阴极起作用6,第二锥形边缘起着栅极7的作用,基板1用作从阴极发射的电子的阳极 以上。

    Massively parallel array cathode
    338.
    发明授权
    Massively parallel array cathode 失效
    大容量并联阵列阴极

    公开(公告)号:US5363021A

    公开(公告)日:1994-11-08

    申请号:US089821

    申请日:1993-07-12

    CPC classification number: H01J9/025 H01J3/022 H01J31/127

    Abstract: A massively parallel electron beam array for controllably imaging a target includes a multiplicity of emitter cathodes, each incorporating one or more micron-sized emitter tips. Each tip is controlled by a control electrode to produce an electron stream, and its deflection is controlled by a multielement deflection electrode to permit scanning of a corresponding target region.

    Abstract translation: 用于可控地成像靶的大规模平行电子束阵列包括多个发射极阴极,每个发射极阴极包括一个或多个微米级的发射极尖端。 每个尖端由控制电极控制以产生电子流,并且其偏转由多元件偏转电极控制以允许扫描相应的目标区域。

    System making it possible to control the shape of a charged particle beam
    339.
    发明授权
    System making it possible to control the shape of a charged particle beam 失效
    系统使得可以控制带电粒子束的形状

    公开(公告)号:US5336973A

    公开(公告)日:1994-08-09

    申请号:US999227

    申请日:1992-12-31

    CPC classification number: H01J3/022 H01J3/029

    Abstract: A system for controlling the shape of a charged particle beam. The particle beam is emitted from a source (58) of the said particles. Said source is associated with a collecting electrode which collects the particles. The system comprises at least one resistive zone (56) and at least two control electrodes (52, 54). The resistive zone and the control electrodes are arranged substantially at the same level as the source. The control electrodes are also placed on either side of the resistive zone and serve to polarize the latter. The electrical resistance profile of the resistive zone is chosen in such a way that it has the potential distribution so that it is possible to obtain the desired shape of the beam from the source when the control electrodes are appropriately polarized.

    Abstract translation: 一种用于控制带电粒子束形状的系统。 粒子束从所述粒子的源(58)发射。 所述源与收集颗粒的收集电极相关联。 该系统包括至少一个电阻区(56)和至少两个控制电极(52,54)。 电阻区和控制电极基本上设置在与源相同的水平。 控制电极也放置在电阻区的两侧,并用于使电极区域极化。 电阻区域的电阻分布以这样一种方式选择,使得其具有电势分布,使得当控制电极被适当地极化时,可以从源获得期望的光束形状。

    Pierce gun with grading electrode
    340.
    发明授权
    Pierce gun with grading electrode 失效
    皮尔斯枪带分级电极

    公开(公告)号:US5332945A

    公开(公告)日:1994-07-26

    申请号:US881041

    申请日:1992-05-11

    Inventor: Richard B. True

    CPC classification number: H01J3/029 H01J23/065

    Abstract: A Pierce electron gun is provided having a cathode, a focusing electrode surrounding the cathode, and an anode disposed a fixed distance from the cathode and having an opening therethrough. The electron gun has at least one grading electrode disposed between the focusing electrode and the anode. The grading electrode controls shape of equipotential lines of an electric potential difference provided between the anode and the cathode, to purposely reduce field gradient levels formed by the electric potential difference. The grading electrode further has a double radial bend having an inner radial curve of a first radius and an outer radial curve of a second radius.

    Abstract translation: 提供了一种皮尔斯电子枪,其具有阴极,围绕阴极的聚焦电极以及与阴极设置成固定距离且具有穿过其中的开口的阳极。 电子枪具有设置在聚焦电极和阳极之间的至少一个分级电极。 分级电极控制设置在阳极和阴极之间的电位差的等电位线的形状,以有意地减小由电位差形成的场梯度电平。 分级电极还具有双径向弯曲,其具有第一半径的内径向曲线和第二半径的外径向曲线。

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