摘要:
A semiconductor wafer is radiated with an electron beam so that the inelastic scattering takes place in the narrow region, and current flows out from the narrow region; the amount of current is dependent on the substance or substances in the narrow region so that the analyst evaluates the degree of contamination on the basis of the substance or substances specified in the narrow region.
摘要:
A storage battery unit (1) including a storage battery (2) and a monitoring device (3) that monitors a state of the storage battery using an output of the storage battery as an input, wherein, in order to prevent the monitoring device from consuming electric power in a state before use of the storage battery and prevent nonfunctioning of the monitoring device in use of the storage battery, a starting circuit (4) is provided between the storage battery and the monitoring device (3), the starting circuit including: a main switch that holds an OFF state in a state before a load is connected to the storage battery and interrupts supply of electric power from the storage battery (2) to the monitoring device; and a switch drive circuit that detects a reduction in terminal voltage of the storage battery that occurs when the load exceeding the set value is connected to the storage battery, and sets the main switch to an ON state.
摘要:
The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.
摘要:
An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.
摘要:
The semiconductor manufacturing device according to the present invention having a mechanical drive part which is moved in a vacuum device while holding a substrate includes at least one discharge port for introducing an inert gas into the vacuum device, and a flow rate control part for controlling the inert gas which is discharged into the vacuum device from the discharge port at a constant flow rate.
摘要:
A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.
摘要:
A house is two-dimensionally moved, and generates first and second analog signals representative of a movement in opposing first and second directions and another movement in opposing third and fourth directions that are perpendicular to the first and second directions. A data input device compares the first and second analog signals with a periodically changing reference signal to output a first pulse signal and a second pulse signal depending upon the comparison result, and selectively transfers a first pulse train and a second pulse train depending upon the duty factors of the first and second pulse signals so as to generate a composite digital signal representative of the motion of the mouse to a computer unit.
摘要:
An acceleration sensor is provided with damping means on an upper surface and/or an lower surface of a movable portion of a sensor body and/or opposite regions surrounded by the movable portion and a rim of the sensor body in order to provide damping of a vibration to the movable portion of the sensor body. The damping means includes a material having a large mechanical damping constant, for example, a plastic, a gel, an inorganic material, and micro capsules. In a fabrication process of the acceleration sensor, a supporting film is provided on the movable portion of the sensor body, the damping material is provided on the supporting film and the movable portion of the sensor body is subjected to etching so as to form a weight and a diaphragm.
摘要:
A field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes each of which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer, and a gate electrode layer which is on the dielectric layer and has apertures right above the respective holes in the dielectric layer. The tip of each emitter electrode is near or in the aperture in the gate electrode layer, and the emission current depends on the position of the emitter tip relative to the gate electrode. The dielectric layer and the gate electrode layer are largely removed so as to remain only in limited first regions which are around the holes for the respective emitter electrodes and limited second regions each of which connects one of the first regions to another. The partial removal of the dielectric and gate electrode layers is for reducing interlayer stresses induced by temperature changes. In the first regions the gate electrode layer is made thicker than in the second regions to compensate for inevitable variations in the emitter electrode heights without augmenting the interlayer stresses.
摘要:
A first laminated sub-structure having a semiconductor substrate, a lower insulating layer on the semiconductor substrate, emitter electrodes formed in micro-apertures in the lower insulating layer and a gate electrode on the upper surface of the lower insulating layer is aligned with a second laminated sub-structure having a transparent upper insulating layer and a grid member on the transparent upper insulating layer by means of a stepper, and the first and second laminated sub-structures are fixed to each other through a field assisted glass-metal sealing technique.