STORAGE BATTERY UNIT
    2.
    发明申请
    STORAGE BATTERY UNIT 有权
    储存电池单元

    公开(公告)号:US20070273329A1

    公开(公告)日:2007-11-29

    申请号:US11755297

    申请日:2007-05-30

    IPC分类号: H02J7/00

    摘要: A storage battery unit (1) including a storage battery (2) and a monitoring device (3) that monitors a state of the storage battery using an output of the storage battery as an input, wherein, in order to prevent the monitoring device from consuming electric power in a state before use of the storage battery and prevent nonfunctioning of the monitoring device in use of the storage battery, a starting circuit (4) is provided between the storage battery and the monitoring device (3), the starting circuit including: a main switch that holds an OFF state in a state before a load is connected to the storage battery and interrupts supply of electric power from the storage battery (2) to the monitoring device; and a switch drive circuit that detects a reduction in terminal voltage of the storage battery that occurs when the load exceeding the set value is connected to the storage battery, and sets the main switch to an ON state.

    摘要翻译: 一种蓄电池单元(1),包括使用所述蓄电池的输出作为输入来监视所述蓄电池的状态的蓄电池(2)和监视装置(3),其中,为了防止所述监视装置 在使用蓄电池之前的状态下消耗电力,并且防止在使用蓄电池时监视装置不起作用,在蓄电池和监视装置(3)之间设置起动电路(4),起动电路包括 :在负载连接到蓄电池之前的状态下保持断开状态并中断从蓄电池(2)向监控装置供电的主开关; 以及开关驱动电路,其检测当超过设定值的负载连接到蓄电池时发生的蓄电池的端子电压的降低,并将主开关设定为接通状态。

    Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer
    3.
    发明申请
    Contact hole standard test device, method of forming the same, method of testing contact hole, method and apparatus for measuring a thickness of a film, and method of testing a wafer 失效
    接触孔标准试验装置,其形成方法,接触孔测试方法,测量薄膜厚度的方法和装置以及测试晶片的方法

    公开(公告)号:US20060093789A1

    公开(公告)日:2006-05-04

    申请号:US11198462

    申请日:2005-08-05

    申请人: Keizo Yamada

    发明人: Keizo Yamada

    IPC分类号: B32B3/10

    CPC分类号: G01N23/2251 Y10T428/24331

    摘要: The present invention provides a standard test device used for testing a hole of a semiconductor device. The standard test device has a structure which comprises: at least a dummy film on a base surface; at least an insulating layer which has at least one opening penetrating through the insulating layer, so that a part of a top surface of the at least dummy film is shown through the at least one opening, wherein the at least dummy film has a predetermined constant thickness at least around the at least one opening. The standard test device makes it easily possible to determine or measure a thickness of a residual film on a bottom of the contact hole.

    摘要翻译: 本发明提供了一种用于测试半导体器件的孔的标准测试装置。 标准测试装置具有以下结构:至少在基面上具有虚拟膜; 至少一个绝缘层,其至少有一个穿透绝缘层的开口,使得至少一个虚拟膜的上表面的一部分通过至少一个开口示出,其中该至少虚拟膜具有预定的常数 至少在所述至少一个开口周围的厚度。 标准测试装置可以容易地确定或测量接触孔底部残留膜的厚度。

    FILM THICKNESS MEASURING APPARATUS AND A METHOD FOR MEASURING A THICKNESS OF A FILM
    4.
    发明申请
    FILM THICKNESS MEASURING APPARATUS AND A METHOD FOR MEASURING A THICKNESS OF A FILM 失效
    薄膜厚度测量装置和测量薄膜厚度的方法

    公开(公告)号:US20050116726A1

    公开(公告)日:2005-06-02

    申请号:US11005339

    申请日:2004-12-06

    CPC分类号: G01B15/02 H01J2237/2813

    摘要: An apparatus for measuring the thickness of thin-film cause electron beams of first and second energies to strike thin-film to be measured that is formed on a silicon substrate, and measures the first substrate current value of current flowing in the substrate when it is struck by an electron beam of a first energy and the second substrate current value of current flowing in the substrate when it is struck by an electron beam of a second energy. The thin-film measuring apparatus obtains reference data indicating a relationship between the film thickness and a reference function having as variables the substrate current for the case of an electron beam of the first energy striking a standard sample and the substrate current for the case of an electron beam of the second energy striking the standard sample, and calculates the thickness of the thin-film under measurement based on the first and second substrate current values, giving consideration to the reference data.

    摘要翻译: 用于测量薄膜厚度的装置使得第一和第二能量的电子束撞击形成在硅衬底上的要测量的薄膜,并且测量在衬底中流动的电流的第一衬底电流值 被第一能量的电子束撞击并且当其被第二能量的电子束撞击时在衬底中流动的电流的第二衬底电流值。 薄膜测量装置获得指示薄膜厚度和参考功能之间的关系的参考数据,该基准函数具有作为第一能量的电子束冲击标准样品的情况下的衬底电流的变量和用于 电子束的第二能量冲击到标准样品,并且基于第一和第二衬底电流值计算测量的薄膜的厚度,考虑参考数据。

    Semiconductor device test method and semiconductor device tester

    公开(公告)号:US06809534B2

    公开(公告)日:2004-10-26

    申请号:US09865528

    申请日:2001-05-29

    申请人: Keizo Yamada

    发明人: Keizo Yamada

    IPC分类号: G01R3102

    CPC分类号: G01R31/307 G01R31/2853

    摘要: A defective position of a sample to be tested is detected by irradiating the test sample and another test sample with electron beam while scanning the test samples, storing values of current generated in the test samples correspondingly to electron beam irradiation positions as current waveforms and comparing the current waveforms.

    Simple data input device for supplying computer unit digital signal
converted from analog signal
    7.
    发明授权
    Simple data input device for supplying computer unit digital signal converted from analog signal 失效
    用于提供从模拟信号转换的计算机单元数字信号的简单数据输入装置

    公开(公告)号:US5913076A

    公开(公告)日:1999-06-15

    申请号:US826053

    申请日:1997-03-28

    申请人: Keizo Yamada

    发明人: Keizo Yamada

    CPC分类号: G06F3/038 G06F3/0383 G06F3/05

    摘要: A house is two-dimensionally moved, and generates first and second analog signals representative of a movement in opposing first and second directions and another movement in opposing third and fourth directions that are perpendicular to the first and second directions. A data input device compares the first and second analog signals with a periodically changing reference signal to output a first pulse signal and a second pulse signal depending upon the comparison result, and selectively transfers a first pulse train and a second pulse train depending upon the duty factors of the first and second pulse signals so as to generate a composite digital signal representative of the motion of the mouse to a computer unit.

    摘要翻译: 二维地移动房屋,并且产生表示相反的第一和第二方向的运动的第一和第二模拟信号,以及垂直于第一和第二方向的相反的第三和第四方向的另一运动。 数据输入装置将第一和第二模拟信号与周期性变化的参考信号进行比较,以根据比较结果输出第一脉冲信号和第二脉冲信号,并根据占空比选择性地传送第一脉冲串和第二脉冲串 第一和第二脉冲信号的因子,以产生代表鼠标对计算机单元的运动的复合数字信号。

    Semiconductor acceleration sensor and method of fabrication thereof
    8.
    发明授权
    Semiconductor acceleration sensor and method of fabrication thereof 失效
    半导体加速度传感器及其制造方法

    公开(公告)号:US5656846A

    公开(公告)日:1997-08-12

    申请号:US399883

    申请日:1995-03-07

    申请人: Keizo Yamada

    发明人: Keizo Yamada

    摘要: An acceleration sensor is provided with damping means on an upper surface and/or an lower surface of a movable portion of a sensor body and/or opposite regions surrounded by the movable portion and a rim of the sensor body in order to provide damping of a vibration to the movable portion of the sensor body. The damping means includes a material having a large mechanical damping constant, for example, a plastic, a gel, an inorganic material, and micro capsules. In a fabrication process of the acceleration sensor, a supporting film is provided on the movable portion of the sensor body, the damping material is provided on the supporting film and the movable portion of the sensor body is subjected to etching so as to form a weight and a diaphragm.

    摘要翻译: 加速度传感器在传感器主体的可动部分的上表面和/或下表面上和/或被可移动部分和传感器主体的边缘包围的相对区域中设置有阻尼装置,以便提供阻尼 向传感器主体的可动部分振动。 阻尼装置包括具有大的机械阻尼常数的材料,例如塑料,凝胶,无机材料和微胶囊。 在加速度传感器的制造过程中,在传感器主体的可动部分设置有支撑膜,在支撑膜上设置阻尼材料,对传感器主体的可动部进行蚀刻,以形成重量 和隔膜。

    Field emission cold cathode element having exposed substrate
    9.
    发明授权
    Field emission cold cathode element having exposed substrate 失效
    具有暴露基板的场致发射冷阴极元件

    公开(公告)号:US5650688A

    公开(公告)日:1997-07-22

    申请号:US460750

    申请日:1995-06-02

    IPC分类号: H01J1/304 H01J1/30

    CPC分类号: H01J1/3042

    摘要: A field emission cold cathode element having a conducting substrate, a dielectric layer which is on the substrate and has holes, emitter electrodes each of which have a sharp-pointed tip and stand on the substrate in the respective holes in the dielectric layer, and a gate electrode layer which is on the dielectric layer and has apertures right above the respective holes in the dielectric layer. The tip of each emitter electrode is near or in the aperture in the gate electrode layer, and the emission current depends on the position of the emitter tip relative to the gate electrode. The dielectric layer and the gate electrode layer are largely removed so as to remain only in limited first regions which are around the holes for the respective emitter electrodes and limited second regions each of which connects one of the first regions to another. The partial removal of the dielectric and gate electrode layers is for reducing interlayer stresses induced by temperature changes. In the first regions the gate electrode layer is made thicker than in the second regions to compensate for inevitable variations in the emitter electrode heights without augmenting the interlayer stresses.

    摘要翻译: 具有导电性基板的场发射冷阴极元件,在基板上具有空穴的电介质层,在电介质层的各个孔内的基板上具有尖锐尖端并且位于基板上的发射电极, 栅极电极层,其位于电介质层上并且具有位于电介质层中相应孔的正上方的孔。 每个发射电极的尖端靠近或位于栅电极层的孔中,并且发射电流取决于发射极尖端相对于栅电极的位置。 电介质层和栅极电极层被大量地去除,以便仅保留在用于各个发射极电极的孔周围的有限的第一区域和每个将第一区域中的一个连接到另一个的有限的第二区域。 介电层和栅电极层的部分去除是为了减少由温度变化引起的层间应力。 在第一区域中,使栅电极层比第二区域更厚,以补偿发射极电极高度的不可避免的变化而不增加层间应力。