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公开(公告)号:US11150279B2
公开(公告)日:2021-10-19
申请号:US16554248
申请日:2019-08-28
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Vanni Poletto , Riccardo Miglierina , Antonio Davide Leone , Sergio Lecce
IPC: G01R31/34 , G01R19/165 , G11C27/02 , H03F3/45
Abstract: A circuit includes a switching circuit including a first switch and a second switch. A current sensing circuit is coupled to the switching circuit to sense a first current through the first switch and to generate a first sensed current signal based on the sensed first current, and configured to sense a second current through the second switch and to generate a second sensed current signal based on the sensed second current. An output circuit is coupled to the current sensing circuit and is configured to generate a failure signal based on the first sensed current signal and the second sensed current signal.
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公开(公告)号:US20210320219A1
公开(公告)日:2021-10-14
申请号:US17357653
申请日:2021-06-24
Applicant: STMicroelectronics S.r.l.
Inventor: Massimo Cataldo MAZZILLO , Valeria CINNERA MARTINO , Antonella SCIUTO
IPC: H01L31/12 , H01L31/0376 , H01L31/107 , H01L31/18 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/34
Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.
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公开(公告)号:US20210319836A1
公开(公告)日:2021-10-14
申请号:US17224024
申请日:2021-04-06
Inventor: Francesco LA ROSA , Enrico CASTALDO , Francesca GRANDE , Santi Nunzio Antonino PAGANO , Giuseppe NASTASI , Franco ITALIANO
IPC: G11C16/34 , G11C16/14 , G11C16/10 , G11C16/26 , H01L27/11529
Abstract: A semiconductor well of a non-volatile memory houses memory cells. The memory cells each have a floating gate and a control gate. Erasing of the memory cells includes biasing the semiconductor well with a first erase voltage having an absolute value greater than a breakdown voltage level of bipolar junctions of a control gate switching circuit of the memory. An absolute value of the first erase voltage is based on a comparison of a value of an indication of wear of the memory cells to a wear threshold value.
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374.
公开(公告)号:US11146205B2
公开(公告)日:2021-10-12
申请号:US16750216
申请日:2020-01-23
Applicant: STMicroelectronics S.r.l.
Inventor: Andrea Spampinato , Gianluigi Forte
IPC: H02K17/32 , H02K23/68 , H02K27/30 , H02P7/00 , H02P29/032
Abstract: A multi-phase electric motor includes a stator winding. The multi-phase electric motor is controlled by regulating a current flowing in the multi-phase electric motor in response to an applied voltage. An overload condition of the multi-phase electric motor is detected by monitoring a thermal increase of the value of a stator resistance of the stator winding of the multi-phase electric motor during a steady state condition of said multi-phase electric motor in which the current flowing in the motor has constant phase, and the motor is operating at constant load with constant speed.
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公开(公告)号:US20210313887A1
公开(公告)日:2021-10-07
申请号:US17216263
申请日:2021-03-29
Applicant: STMicroelectronics S.r.l.
Inventor: Adalberto MARIANI
Abstract: A converter circuit includes a half-bridge power circuit with a first and a second switch between an input node and a current node and between the current node ground, respectively. An inductor is coupled between the current node and an output node. Logic control circuitry is configured to switch the first and second switches to a current recirculation state and to a current charge state. The logic circuitry is configured to switch the switches from the current recirculation state to the current charge state as a result of a voltage indicator signal from an output voltage comparator being asserted while starting an on-time counter signal having an expiration value, and from the current charge state to the current recirculation state as a result of the on-time counter signal having reached its expiration value in combination with the voltage indicator signal from the voltage comparator being de-asserted.
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376.
公开(公告)号:US20210303267A1
公开(公告)日:2021-09-30
申请号:US17203591
申请日:2021-03-16
Applicant: STMICROELECTRONICS S.r.l.
Inventor: Xiao Kang JIAO , Fabio Giuseppe DE AMBROGGI , Loris LUISE
Abstract: A method includes retrieving a plurality of datasets from respective memory registers of a memory and storing the retrieved plurality of datasets in respective register portions of a first register. A dataset of data-processing coefficients are stored in a second register. First processing is applied using, as the first operand, a first sub-set of dataset elements stored in the first register, and using, as the second operand, the data-processing coefficients, obtaining a first result. Second processing is applied using, as the first operand, a second sub-set of dataset elements stored in the first register comprised in a second window having a size equal to the dataset size, and using, as the second operand, the replica of the dataset of data-processing coefficients, obtaining a second result. An output is generated based on the first and second results. The first and second processing may perform multiply accumulate (MAC) operations.
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公开(公告)号:US11133242B2
公开(公告)日:2021-09-28
申请号:US17015619
申请日:2020-09-09
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Michele Derai , Federico Giovanni Ziglioli
IPC: H01L23/495 , H01L23/31 , H01L23/00 , H01L21/56
Abstract: A method of manufacturing semiconductor devices such as integrated circuits comprises: providing one or more semiconductor chips having first and second opposed surfaces, coupling the semiconductor chip or chips with a support substrate with the second surface towards the support substrate, embedding the semiconductor chip or chips coupled with the support substrate in electrically-insulating packaging material by providing in the packaging material electrically-conductive passageways. The electrically-conductive passageways comprise: electrically-conductive chip passageways towards the first surface of the at least one semiconductor chip, and/or electrically-conductive substrate passageways towards the support substrate.
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公开(公告)号:US11133064B2
公开(公告)日:2021-09-28
申请号:US16931335
申请日:2020-07-16
Applicant: STMicroelectronics S.r.l.
Inventor: Marcella Carissimi , Laura Capecchi , Marco Pasotti , Fabio Enrico Carlo Disegni
Abstract: A sense amplifier and a method for accessing a memory device are disclosed. In an embodiment a sense amplifier for a memory device includes a first input node selectively coupled to a first memory cell through a first local bitline and a first main bitline, a second input node selectively coupled through a second local bitline and a second main bitline to a second memory cell or to a reference generator configured to generate a reference current, a first current generator controllable so as to inject a first variable current into the first input node, a second current generator controllable so as to inject a second variable current into the second input node, a first branch coupled to the first input node and comprising a first switch circuit, a first sense transistor and a first forcing transistor and a second branch coupled to the second input node and including a second switch circuit, a second sense transistor and a second forcing transistor.
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379.
公开(公告)号:US11123878B2
公开(公告)日:2021-09-21
申请号:US16265650
申请日:2019-02-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Domenico Giusti , Lorenzo Tentori
Abstract: A MEMS manipulation device has first and second manipulation arms carrying respective mutually facing gripping elements. At least the first manipulation arm is formed by a driving arm and by an articulated arm hinged together through an articulation structure. The first driving arm includes a first beam element and a first piezoelectric region on the first beam element. The first articulation structure includes a first connecting element not deformable in the thickness direction, as well as a first hinge structure interposed between the first driving arm, the first articulated arm, and the first connecting element.
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公开(公告)号:US11116427B2
公开(公告)日:2021-09-14
申请号:US16259254
申请日:2019-01-28
Applicant: STMicroelectronics S.r.l.
Inventor: Stefano Rossi
Abstract: A device for monitoring breathing activity of, e.g., athletes while exercising includes a breathing activity sensor configured to be worn by a wearer and to provide a breathing activity signal indicative of the breathing activity of the wearer. A motion sensor is configured to be worn by the wearer and to provide a motion signal indicative of the motion activity of the wearer. A processing arrangement is coupled to the breathing activity sensor to process the breathing activity signal and produce a processed breathing activity signal. The processing arrangement includes filter circuitry having a first filtering bandwidth and a second filtering bandwidth. The first filtering bandwidth is larger than the second filtering bandwidth. The filter circuitry is coupled to the motion sensor and operates with one of the first filtering bandwidth and the second filtering bandwidth selected as a function of the motion signal from the motion sensor.
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