NOVEL WAFER REPAIR METHOD USING DIRECT-WRITING
    32.
    发明申请
    NOVEL WAFER REPAIR METHOD USING DIRECT-WRITING 有权
    使用直写功能的新型波形修复方法

    公开(公告)号:US20080054191A1

    公开(公告)日:2008-03-06

    申请号:US11934512

    申请日:2007-11-02

    Abstract: A method of wafer repairing comprises identifying locations and patterns of defective regions in a semiconductor wafer; communicating the locations and patterns of defective regions to a direct-writing tool; forming a photoresist layer on the semiconductor wafer; locally exposing the photoresist layer within the defective regions using an energy beam; developing the photoresist layer on the semiconductor wafer; and wafer-processing the semiconductor wafer under the photoresist layer after exposing and developing.

    Abstract translation: 晶片修复的方法包括识别半导体晶片中的缺陷区域的位置和图案; 将缺陷区域的位置和图案传送到直写工具; 在半导体晶片上形成光致抗蚀剂层; 使用能量束将缺陷区域内的光致抗蚀剂层局部曝光; 在半导体晶片上显影光致抗蚀剂层; 并在曝光和显影之后将光致抗蚀剂层下方的半导体晶片进行晶片处理。

    System and method for photolithography in semiconductor manufacturing
    38.
    发明申请
    System and method for photolithography in semiconductor manufacturing 有权
    半导体制造中的光刻系统和方法

    公开(公告)号:US20060172520A1

    公开(公告)日:2006-08-03

    申请号:US11050312

    申请日:2005-02-03

    CPC classification number: H01L21/76802 H01L21/31144

    Abstract: A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over the substrate in areas not covered by the photoresist portions and the photoresist portions are removed. After removing the photoresist portions, the second layer is used to modify the substrate to create at least a portion of the semiconductor device.

    Abstract translation: 一种用于形成半导体器件的方法包括在衬底上形成光致抗蚀剂层并图案化光致抗蚀剂层以形成光致抗蚀剂部分。 在不被光致抗蚀剂部分覆盖的区域中的衬底上形成第二层,并去除光致抗蚀剂部分。 在去除光致抗蚀剂部分之后,第二层用于修改基板以产生半导体器件的至少一部分。

    Apparatus and method for repairing resist latent images

    公开(公告)号:US20050189499A1

    公开(公告)日:2005-09-01

    申请号:US11119061

    申请日:2005-04-28

    Applicant: Burn Lin

    Inventor: Burn Lin

    CPC classification number: G03F7/7065 G03F7/2051 G03F7/70383 G03F7/70675

    Abstract: A method and an apparatus for repairing resist latent image on a wafer are disclosed. In the method, an image scanner equipped with a first and a second wafer carrier, and a primary imaging column and a secondary imaging column is utilized to conduct the processes of imaging a resist latent image on a first wafer and repairing a defect in a resist latent image on a second wafer positioned on a second wafer carrier simultaneously. The primary imaging column and the secondary imaging column may be situated in the same vacuum chamber to facilitate operation.

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