摘要:
A quadrature phase correction circuit includes an N-bit code counter configured to generate an N-bit code value according to a detected phase difference when a quadrature phase correction is carried out, N-bit code values are stored according to a plurality of detected phase differences. A controller shares the N-bit code counter, controls the generation of the N-bit code values according to the plurality of detected phase differences, and controls the storing of the N-bit code values in an allocated space of the storage by use of a multiplexer configured to provide the plurality of detected phase differences to the N-bit code counter, and a demultiplexer configured to store the N-bit code values in the allocated space of the storage.
摘要:
A clock generating circuit, including a pulse generating unit to generate a plurality of pulse signals based on a reference clock, the pulse signals each having the same period, a phase difference between the adjacent pulse signals being a first phase difference; and a multi-phase clock generating unit to generate a plurality of multi-phase clocks, a phase difference between the adjacent multi-phase clocks being equal to a second phase difference between pulse signals of a pulse signal pair, based on a plurality of unit-phase clock generating units receiving the pulse signal pairs.
摘要:
Phase locked loop and method for controlling the same includes a phase/frequency detector configured to detect a phase difference between an input clock and a feedback clock to generate an up signal or a down signal depending on the detected phase difference, a charge pump configured to variably control a bandwidth according to a bandwidth control signal input thereinto, the charge pump operating in response to the up signal or the down signal and a voltage controlled oscillator configured to change a frequency according to an output of the charge pump.
摘要:
Bias voltage generator circuit and clock synchronizing circuit includes a bias unit configured to control a current in response to a bandwidth control signal, an amplification unit configured to differentially amplify an input signal in response to the current controlled by the bias unit and an output unit configured to receive an output signal of the amplification unit to output the bias voltage.
摘要:
A semiconductor memory device can optimize the layout area and current consumption based on multi-phase clock signals which are generated by dividing a source clock signal using a reset signal without a delay locked loop and a phase locked loop in order to have various phase information of low frequencies and different activation timings with a constant phase difference.
摘要:
A semiconductor device includes a pulse signal generating unit for generating a plurality of pulse signals each of which has a different pulse width from each other, a signal multiplexing unit for outputting one of the plurality of the pulse signals as an enable signal in response to an operating frequency of the semiconductor device, and a duty ratio detecting unit for detecting a duty ratio of external clock signals in response to the enable signal.
摘要:
Disclosed is a semiconductor device capable of detecting levels of an external supply voltage, which includes a plurality of signal receivers for simultaneously receiving external input signals, wherein a driving voltage is applied to only one of the signal receivers according to the levels of the external supply voltage.
摘要:
The data output circuit for a semiconductor memory apparatus includes a plurality of pads in which a range of use is determined such that the respective pads are used exclusively in each of at least two kinds of unit data output modes or used commonly in all of the at least two kinds of unit data output modes, a plurality of data lines that transmit data from a plurality of memory banks to the outside of the memory banks, and a data output control unit that outputs data from a data line among the plurality of data lines, according to at least one control signal, to a signal line corresponding to a pad used in a currently set unit data output mode among the plurality of pads.
摘要:
Disclosed is a semiconductor device capable of detecting levels of an external supply voltage, which includes a plurality of signal receivers for simultaneously receiving external input signals, wherein a driving voltage is applied to only one of the signal receivers according to the levels of the external supply voltage.
摘要:
A semiconductor integrated circuit includes: a delay locked loop (DLL) configured to generate a DLL clock signal by delaying a source clock signal by a first delay time for obtaining a lock, wherein an update period of the DLL is controlled in response to an update period control signal after locking is completed; and an update period controller configured to generate the update period control signal based on a second delay time occurring in a loop path of the DLL in response to the source clock signal and a plurality of control signals provided from the DLL.