Abstract:
Processes for forming trenches within silicon substrates are described. According to an embodiment of the invention, a masked substrate is initially provided that comprises (a) a silicon substrate and (b) a patterned resist layer over the silicon substrate. The patterned resist layer has one or more apertures formed therein. Subsequently, a trench is formed in the substrate through the apertures in the resist layer by an inductive plasma-etching step, which is conducted using plasma source gases that comprise SF6, at least one fluorocarbon gas, and N2. If desired, Cl2 can also be provided in addition to the above source gases. The process of the present invention produces chamber deposits in low amounts, while providing high etching rates, high silicon:resist selectivities, and good trench sidewall profile control.
Abstract:
A method and apparatus for monitoring, measuring and/or controlling the etch rate in a dry etch semiconductor wafer processing system. The wafer processing system has a monitoring assembly which comprises an electromagnetic radiation source and detector which interferometrically measures the etch rate. The actual rate of change of the etch as it progresses is measures by this technique and is compared to a model of a desired rate of change in a controller. The error between the actual rate of change and the desired rate of change is then used to vary at least one of the process parameters of the system in a direction tending to null the difference.
Abstract:
A nitride etch process particularly useful when integrated with a silicon trench etch needing a sloping silicon surface adjacent to the interface between the silicon and an oxide layer intermediate the silicon and nitride. The nitride etch process is a plasma process having an etching gas mixture of sulfur hexafluoride (SF6) and trifluoromethane (CHF3) although nitrogen or oxygen may be added for additional controls. The trifluoromethane is believed to create a polymer passivation on the sidewalls of the hole being etched which, when the etch reaches the oxide-silicon interface, protects the interface and underlying silicon. The nitride etch may proceed through the oxide or a separate fluorocarbon-based oxide etching step may be performed before a bromine-based etch of the silicon starts.
Abstract:
A method and system for reissuing load requests in a multi-stream prefetch engine of a data processing system is provided. A read transaction is received from a transaction requester, and the read transaction has a base address and a prefetch stream identifier. The received read transaction is issued to a prefetch stream associated with a data prefetch buffer identified by the prefetch stream identifier as the prefetch stream is one of a set of prefetch streams, each of which has an associated prefetch buffer. The read transaction is issued to a prefetch stream associated with a data prefetch buffer, and a set of prefetch addresses are generated, each prefetch address in the set of prefetch addresses being proximate to the base address. A determination is made as to whether the data prefetch buffer has unallocated prefetch buffer entries, and a comparison is made between each prefetch address in the set of prefetch addresses and all prefetch addresses in each data prefetch buffer to determine whether a prefetch address in the set of prefetch addresses collides with a prefetch address in a data prefetch buffer. In response to a determination of an absence of an address collision and a determination that the data prefetch buffer does not have an unallocated prefetch buffer entry, the base address is held for data prefetch reissuance.
Abstract:
Disclosed is an apparatus which operates to substantially evenly distribute commands and/or data packets issued from a managed program or other entity over a given time period. The even distribution of these commands or data packets minimizes congestion in critical resources such as memory, I/O devices and/or the bus for transferring the data between source and destination. Any unmanaged commands or data packets are treated as in conventional technology.
Abstract:
A computer implemented method, a processor chip, a computer program product, and a data processing system managing a link stack. The data processing system utilizes speculative pushes onto and pops from the link stack. The link stack comprises a set of entries, and each entry comprises a set of state bits. A speculative push of a first instruction is received onto the data stack, and the first instruction is stored into a first entry of the set of entries. A first bit is set to indicate that the first instruction is a valid instruction. A second bit is set to indicate that the first instruction has been speculatively pushed onto the link stack. The link stack pointer control is updated to indicate that the first entry is a top-of-data stack entry.
Abstract:
The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. To assist removing of particles from the wafer (or substrate) surfaces, the polymeric compound of the polymers can contain a polar functional group, which can establish polar-polar molecular interaction and hydrogen bonds with hydrolyzed particles on the wafer surface. The polymers of a polymeric compound(s) with a large molecular weight form long polymer chains and network. The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials. The polymeric compound(s) of the polymers may also include a functional group that carries charge in the cleaning solution. The charge of the functional group of the polymers improves the particle removal efficiency.
Abstract:
A method and an apparatus are provided for handling a list DMA command in a computer system. The list DMA command relates to an effective address (EA) of a system memory. At least one processor in the system has a local storage. The list DMA command is queued in a DMA queue (DMAQ). A list element is fetched from the local storage to the DMAQ. The list DMA command is read from the DMAQ. A bus request is issued for the list element. If the bus request is a last request, it is determined whether a current list element is a last list element. If the current list element is not the last list element, it is determined whether the current list element is fenced. If the current list element is not fenced, a next list element is fetched regardless of whether all outstanding requests are completed.
Abstract:
A method for controlling etch processes during fabrication of semiconductor devices comprises tests and measurements performed on non-product and product substrates to define an N-parameter CD control graph that is used to calculate a process time for trimming a patterned mask to a pre-determined width. An apparatus for performing such a method.
Abstract:
Systems and methods for controlling access by a set of agents to a resource, where the agents have corresponding priorities associated with them, and where a monitor associated with the resource controls accesses by the agents to the resource based on the priorities. One embodiment is implemented in a computer system having multiple processors that are connected to a processor bus. The processor bus includes a shaping monitor configured to control access by the processors to the bus. The shaping monitor attempts to distribute the accesses from each of the processors throughout a base period according to priorities assigned to the processors. The shaping monitor allocates slots to the processors in accordance with their relative priorities. Priorities are initially assigned according to the respective bandwidth needs of the processors, but may be modified based upon comparisons of actual to expected accesses to the bus.