公开(公告)号：US20100159316A1

公开(公告)日：2010-06-24

申请号：US12654409

申请日：2009-12-18

Applicant: Sang-Eun Cheon ,  Tatsuya Hashimoto ,  Seok-Yoon Yoo ,  Chi-Young Lee ,  Dong-Wook Kim ,  Dong-Hyun Lee

Inventor： Sang-Eun Cheon ,  Tatsuya Hashimoto ,  Seok-Yoon Yoo ,  Chi-Young Lee ,  Dong-Wook Kim ,  Dong-Hyun Lee

IPC: H01M10/50 ,  H01M10/02

CPC classification number: H01M2/30 ,  H01M2/202 ,  H01M10/613 ,  H01M10/647 ,  H01M10/6557 ,  H01M10/6563

Abstract: A secondary battery module including a plurality of unit batteries that each include a cap plate and a case connected to either one of a positive electrode and a negative electrode of an electrode assembly and an electrode terminal connected to the other of the positive electrode and negative electrode, wherein the electrode terminal protrudes outside of a unit battery by passing through the cap plate covering the case, and a connector having a first end and a second end, wherein the first end fits on the electrode terminal of one of the unit batteries and is screw-engaged to the electrode terminal by a nut and the second end is connected to the case of another adjacent unit battery.

Abstract translation: 一种二次电池模块，包括多个单元电池，每个单元电池包括盖板和连接到电极组件的正极和负极中的任一个的壳体，以及连接到正极和负极中的另一个的电极端子 其中，所述电极端子通过穿过所述壳体的盖板而突出到单元电池外侧，以及具有第一端和第二端的连接器，其中，所述第一端装配在所述单元电池之一的所述电极端子上，并且是 通过螺母与电极端子螺纹接合，并且第二端连接到另一相邻单元电池的壳体。

公开(公告)号：US20090256469A1

公开(公告)日：2009-10-15

申请号：US12405466

申请日：2009-03-17

Applicant: Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC: H01J1/63 ,  H01L29/423 ,  H01L21/336

CPC classification number: H01L29/78615 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757

Abstract: A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.

Abstract translation: 薄膜晶体管，其制造方法和具有该薄膜晶体管的OLED显示装置。 薄膜晶体管包括基板，设置在基板上并具有沟道区，源极和漏极区以及体接触区的半导体层，设置在半导体层上以露出本体接触区的栅绝缘层，硅 层，设置在栅极绝缘层上并与由栅极绝缘层暴露的体接触区域接触，设置在硅层上的栅极电极，设置在栅电极上的层间绝缘层，以及设置在层间绝缘层上的源电极和漏电极 并且与所述源极和漏极区电连接，其中所述体接触区域形成在所述半导体层的边缘区域中。

公开(公告)号：US20090242895A1

公开(公告)日：2009-10-01

申请号：US12409085

申请日：2009-03-23

Applicant: Byoung-Keon PARK ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

Inventor： Byoung-Keon PARK ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Kil-Won Lee ,  Dong-Hyun Lee

IPC: H01L51/52 ,  H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78615 ,  H01L27/1277 ,  H01L29/66757

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer.

Abstract translation: 薄膜晶体管，其制造方法和包括该薄膜晶体管的有机发光二极管显示装置。 薄膜晶体管包括：基板; 设置在所述基板上的半导体层，包括沟道区，源极/漏极区和主体接触区; 栅极绝缘层，设置在所述半导体层上以暴露所述本体接触区域; 栅电极，设置在所述栅极绝缘层上，以与所述主体接触区域接触; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并与源极/漏极区电连接的源极/漏极。 体接触区域形成在半导体层的边缘中。

公开(公告)号：US20090128262A1

公开(公告)日：2009-05-21

申请号：US12112287

申请日：2008-04-30

Applicant: Dong-hyun LEE ,  Kyung-ho PARK ,  Wee-sang PARK ,  Jae-hee KIM ,  Sung-jin MUHN ,  Dae-woong WOO

Inventor： Dong-hyun LEE ,  Kyung-ho PARK ,  Wee-sang PARK ,  Jae-hee KIM ,  Sung-jin MUHN ,  Dae-woong WOO

IPC: H01P7/10

CPC classification number: H01Q7/00 ,  H01Q9/0485

Abstract: An apparatus for transmitting power wirelessly is provided. The apparatus comprises: a dielectric resonator which generates evanescent waves in a predetermined direction in order to transmit power; and a loop antenna which is coupled to a surface of the dielectric resonator and supplies power to the dielectric resonator. The dielectric resonator transmits power by means of evanescent waves generated in directions perpendicular to top and bottom surfaces of the dielectric resonator and by radiation in directions parallel to the top and bottom surfaces of the dielectric resonator. Accordingly, efficient power transmission over short and long distance ranges is possible.

Abstract translation: 提供了一种无线发射功率的装置。 该装置包括：介质谐振器，其在预定方向上产生消逝波以便发射功率; 以及环形天线，其耦合到介质谐振器的表面并且向介质谐振器供电。 介质谐振器通过在与介质谐振器的顶表面和底表面垂直的方向上产生的ev逝波和通过平行于介质谐振器的顶表面和底表面的方向的辐射而发射功率。 因此，可以在短距离和长距离范围内进行有效的电力传输。

公开(公告)号：US20090096552A1

公开(公告)日：2009-04-16

申请号：US12034260

申请日：2008-02-20

Applicant: Cheol-gyu HWANG ,  Sung-tae CHOI ,  Jung-han CHOI ,  Young-hwan KIM ,  Dong-hyun LEE

Inventor： Cheol-gyu HWANG ,  Sung-tae CHOI ,  Jung-han CHOI ,  Young-hwan KIM ,  Dong-hyun LEE

IPC: H01P1/20 ,  H01P11/00

CPC classification number: H01P3/003 ,  H01P1/2005 ,  H01P1/2013 ,  H01P11/003 ,  Y10T29/49016

Abstract: Provided is an electromagnetic bandgap (EBG) structure, and particularly, an overlay EBG structure in which a plurality of vias and a plurality of plates are formed at intervals on a central signal line in such a manner that the vias and plates extend vertically from a substrate in order to reduce leakage loss of an electromagnetic wave through the substrate. Therefore, it is possible to prevent an electromagnetic wave passing through a transmission line from being lost through the substrate, to obtain desired frequency characteristics by adjusting the dimensions of the vias and plates, and to manufacture the overlay EBG structure using an existing CMOS process without having to perform any additional process.

Abstract translation: 提供了一种电磁带隙（EBG）结构，特别地，覆盖EBG结构，其中多个通孔和多个板以间隔形式形成在中心信号线上，使得通孔和板从一个 基板，以减少通过基板的电磁波的泄漏损失。 因此，可以防止通过传输线的电磁波通过衬底丢失，通过调节通孔和板的尺寸来获得期望的频率特性，并且使用现有的CMOS工艺制造覆盖EBG结构，而不需要 必须执行任何额外的过程。

公开(公告)号：US20060198197A1

公开(公告)日：2006-09-07

申请号：US11360615

申请日：2006-02-24

Applicant: Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

Inventor： Ja-nam Ku ,  Chung-woul Kim ,  Young-hoon Min ,  Il-jong Song ,  Dong-hyun Lee

IPC: G11C11/34 ,  G11C16/06

CPC classification number: H03K19/00315 ,  H03K17/08128

Abstract: An over-voltage protection circuit (i.e., a limiter), includes: a first switching block having a plurality of semiconductor elements, serially connected to each other and turned on in sequence according to the magnitude of an input voltage; and a plurality of second switching blocks, in which each of the second switching blocks includes a pair of serially connected semiconductor elements having different current properties. The second switching blocks are connected in parallel to the first switching block. By minimizing a leakage current when an input voltage is below a reference voltage and by maximizing a leakage current when the input voltage is above the reference voltage, the limiter prevents excessive current from flowing into the RF tag circuit when the input voltage is below the reference voltage, and ensures that a sufficient amount of current is supplied to a regulator when the input voltage is below the reference voltage.

Abstract translation: 过电压保护电路（即限幅器）包括：具有多个半导体元件的第一开关块，它们彼此串联连接并根据输入电压的大小依次导通; 以及多个第二切换块，其中每个第二切换块包括具有不同电流特性的一对串联连接的半导体元件。 第二切换块与第一切换块并联连接。 当输入电压低于参考电压时，通过使漏电流最小化，并且当输入电压高于参考电压时使漏电流最大化，当输入电压低于参考电压时，限幅器可防止过大的电流流入RF标签电路 电压，并且确保当输入电压低于参考电压时，足够量的电流被提供给调节器。

公开(公告)号：US09718094B2

公开(公告)日：2017-08-01

申请号：US14845488

申请日：2015-09-04

Applicant: Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

Inventor： Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

IPC: B32B3/00 ,  B05D3/04 ,  B81C1/00 ,  B05D3/10 ,  G03F7/00 ,  B05D5/02 ,  B05D3/02

CPC classification number: B05D3/0466 ,  B05D3/0254 ,  B05D3/10 ,  B05D3/107 ,  B05D5/02 ,  B81C1/00031 ,  B81C1/00055 ,  B81C1/00063 ,  B81C1/00071 ,  B81C1/00079 ,  B81C2201/0149 ,  G03F7/0002 ,  Y10T428/24521

Abstract: A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.

公开(公告)号：US20150375262A1

公开(公告)日：2015-12-31

申请号：US14845488

申请日：2015-09-04

Applicant: Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

Inventor： Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

IPC: B05D3/04

CPC classification number: B05D3/0466 ,  B05D3/0254 ,  B05D3/10 ,  B05D3/107 ,  B05D5/02 ,  B81C1/00031 ,  B81C1/00055 ,  B81C1/00063 ,  B81C1/00071 ,  B81C1/00079 ,  B81C2201/0149 ,  G03F7/0002 ,  Y10T428/24521

Abstract: A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.

Abstract translation: 通过包括在基板表面上形成具有平行小面的嵌段共聚物膜，并且使嵌段共聚物膜退火以形成退火的嵌段共聚物膜的方法形成具有高程度的高程度的线图案的嵌段共聚物膜 具有平行于衬底表面并且垂直于衬底的平行面的线性微区域。 线图案化的嵌段共聚物膜可用于制造磁存储介质，偏振装置和纳米线阵列。

公开(公告)号：US08878198B2

公开(公告)日：2014-11-04

申请号：US13591500

申请日：2012-08-22

Applicant: Jong-Hyun Choi ,  Dong-Hyun Lee ,  Dae-Woo Lee ,  Seong-Hyun Jin ,  Guang-Hai Jin

Inventor： Jong-Hyun Choi ,  Dong-Hyun Lee ,  Dae-Woo Lee ,  Seong-Hyun Jin ,  Guang-Hai Jin

IPC: H01L29/788

CPC classification number: H01L51/56 ,  H01L27/1259 ,  H01L27/3211 ,  H01L27/3218 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L51/0023 ,  H01L51/5265 ,  H01L51/5271 ,  H01L51/5275

Abstract: An organic light-emitting display apparatus includes a substrate including a plurality of red, green, and blue sub-pixel regions, a pixel electrode in each of the plurality of the red, green, and blue sub-pixel regions on the substrate, a Distributed Bragg Reflector (DBR) layer between the substrate and the pixel electrodes, a high-refractive index layer between the substrate and the DBR layer in the blue sub-pixel region, the high-refractive index layer having a smaller area than an area of a corresponding pixel electrode in the blue sub-pixel region, an intermediate layer including an emissive layer on the pixel electrode, and an opposite electrode on the intermediate layer.

Abstract translation: 一种有机发光显示装置，具备包括多个红色，绿色和蓝色子像素区域的基板，基板上的多个红色，绿色和蓝色子像素区域中的每一个中的像素电极， 在基板和像素电极之间的分布布拉格反射器（DBR）层，在蓝色子像素区域中的基板和DBR层之间的高折射率层，高折射率层的面积小于 蓝色子像素区域中的相应像素电极，在像素电极上包括发光层的中间层和中间层上的相对电极。

公开(公告)号：US08841206B2

公开(公告)日：2014-09-23

申请号：US13211700

申请日：2011-08-17

Applicant: Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

Inventor： Byoung-Keon Park ,  Jong-Ryuk Park ,  Yun-Mo Chung ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Yong-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jae-Wan Jung

IPC: H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/32

CPC classification number: H01L27/3244 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/66765 ,  H01L29/78609 ,  H01L29/78675 ,  H01L29/78678

Abstract: A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Abstract translation: 形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层 以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。 薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。