公开(公告)号：US07825404B2

公开(公告)日：2010-11-02

申请号：US12188966

申请日：2008-08-08

申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

IPC分类号： H01L51/30 ,  G03F1/04 ,  C08G65/38

CPC分类号： H01B3/442 ,  H01L51/052

摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。

公开(公告)号：US20080099756A1

公开(公告)日：2008-05-01

申请号：US11597446

申请日：2005-05-30

申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Christine Dehm

发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Christine Dehm

IPC分类号： H01L51/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/79 ,  H01L27/283 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0595

摘要： An integrated semiconductor memory with a cell array is disclosed. In one embodiment the memory includes a multiplicity of memory cells arranged in rows and columns. In at least one memory cell, an organic selection transistor is integrated in a stack arrangement above an organic storage element.

摘要翻译： 公开了一种具有单元阵列的集成半导体存储器。 在一个实施例中，存储器包括以行和列排列的多个存储单元。 在至少一个存储单元中，有机选择晶体管集成在有机存储元件上方的堆叠布置中。

公开(公告)号：US07247735B2

公开(公告)日：2007-07-24

申请号：US11041632

申请日：2005-01-24

申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid

发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid

IPC分类号： C07D409/04 ,  C07D409/10 ,  C07D409/14 ,  C07D407/04 ,  C07D407/10 ,  H01L51/00 ,  H01L35/24 ,  C07D407/14 ,  C07D403/04 ,  C07D403/10 ,  C07D403/14 ,  C07D401/04 ,  C07D401/10 ,  C07D401/14

CPC分类号： H01L51/0068 ,  C07D333/18 ,  C07D409/14 ,  H01L51/0067 ,  H01L51/0076 ,  H01L51/0541 ,  H01L51/0545

摘要： In the case of the materials according to the invention, the charge carrier mobility in the correspondingly prepared films is achieved if the molecules are composed in such a way that side chains—consisting of conjugated aromatic or heteroaromatic systems—are attached in direct conjugation to a central aromatic or heteroaromatic ring so that the total molecule acquires an octupolar structure. This octupolar structure permits an effective π-π interaction of the molecules with one another in a manner such that stacking of a plurality of molecules along an imaginary axis (central ring) can take place and various stacks from among these stacks can interact with one another by intermeshing of the side chains. The electronic properties of the materials are determined both by the arrangement of the molecules in a layer and by the molecular design. The type of side chains and of the central ring which is electronically coupled to the side chains and ideally reinforces the effects in comparison with side chains considered in isolation is important for this purpose.

摘要翻译： 在根据本发明的材料的情况下，如果分子以使得由共轭芳族或杂芳族体系组成的侧链与直接共轭连接的方式组成的方式实现相应制备的膜中的载流子迁移率 中心芳族或杂芳族环，使得总分子获得八极结构。 这种八极结构允许分子彼此有效的pi-pi相互作用，使得沿着假想轴（中心环）堆叠多个分子可以发生，并且这些堆中的各种叠层可以彼此相互作用 通过侧链的相互啮合。 材料的电子性质通过层中分子的排列和分子设计来确定。 电子耦合到侧链的侧链和中心环的类型和理想地加强与隔离考虑的侧链相比的效果对于此目的是重要的。

公开(公告)号：US07115897B2

公开(公告)日：2006-10-03

申请号：US10395455

申请日：2003-03-24

申请人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

发明人： Günter Schmid ,  Marcus Halik ,  Hagen Klauk ,  Christine Dehm ,  Thomas Haneder ,  Thomas Mikolajick

IPC分类号： H01L29/08 ,  H01L29/10 ,  H01L29/76

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/0016 ,  H01L21/823807 ,  H01L27/0629 ,  H01L27/28 ,  H01L28/55

摘要： A semiconductor circuit configuration has at least one pair of complementary operating field-effect transistors in which each transistor has a gate region, first and second source/drain regions and also a channel region with or made of an organic semiconductor material that is provided in between. It is furthermore provided that the gate regions are formed such that they are electrically coupled to one another via a capacitor configuration.

公开(公告)号：US20060202198A1

公开(公告)日：2006-09-14

申请号：US11364847

申请日：2006-02-28

申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

IPC分类号： H01L29/08

CPC分类号： C08K5/053 ,  C08K5/42 ,  C08L61/14

摘要： Embodiments of the invention relate to an integrated circuit comprising an organic semiconductor, particularly an organic field effect transistor (OFET) that is provided with a dielectric layer. The integrated circuit is produced by means of a polymer formulation consisting of a) 100 parts of at least one crosslinkable basic polymer, b) 10 to 20 parts of at least one electrophilic crosslinking component, c) 1 to 10 parts of at least one thermal acid catalyst that generates an activating proton at temperatures ranging from 100 to 150° C., dissolved in d) at least one solvent. Other embodiments of the invention further relate to a method for producing an integrated circuit, which makes it possible to produce integrated circuits comprising dielectric layers, especially for OFET's at low temperatures.

摘要翻译： 本发明的实施例涉及一种包括有机半导体，特别是设置有电介质层的有机场效应晶体管（OFET）的集成电路。 该集成电路是通过聚合物配方制备的，所述聚合物配方由以下组成：a）100份至少一种可交联的碱性聚合物，b）10至20份至少一种亲电交联组分，c）1至10份至少一种热 酸催化剂，其在100至150℃的温度范围内产生活化质子，溶于d）至少一种溶剂。 本发明的其他实施例还涉及一种用于制造集成电路的方法，其使得可以生产包括电介质层的集成电路，特别是在低温下为OFET。

公开(公告)号：US07057206B2

公开(公告)日：2006-06-06

申请号：US10974774

申请日：2004-10-28

申请人： Marcus Halik ,  Günter Schmid ,  Hagen Klauk

发明人： Marcus Halik ,  Günter Schmid ,  Hagen Klauk

IPC分类号： H01L29/08

CPC分类号： H01L51/0036 ,  H01L51/005 ,  H01L51/0094 ,  H01L51/0545 ,  H01L51/0566

摘要： The invention relates to a semiconductor device having a semiconductor path made from an organic semiconductor material. Semiconductor particles or semiconductor clusters are distributed randomly in the organic semiconductor material. The semiconductor particles and/or semiconductor clusters can also be linked by linker molecules. The addition of semiconductor particles to the organic semiconductor material makes it possible to improve the electrical properties, for example, of a field-effect transistor has a semiconductor path of this nature.

摘要翻译： 本发明涉及具有由有机半导体材料制成的半导体路径的半导体器件。 半导体颗粒或半导体簇随机分布在有机半导体材料中。 半导体颗粒和/或半导体簇也可以通过连接分子连接。 将半导体颗粒添加到有机半导体材料中可以提高电性能，例如场效应晶体管具有这种性质的半导体路径。

公开(公告)号：US20060113531A1

公开(公告)日：2006-06-01

申请号：US11329695

申请日：2006-01-11

申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang

发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang

IPC分类号： H01L29/08

CPC分类号： H01L51/0545 ,  C23C18/1851 ,  C23C18/1858 ,  H01L51/0012 ,  H01L51/0052 ,  H01L51/0075

摘要： An embodiment of the invention provides a semiconductor component and method of forming thereof. The component comprises a dielectric layer over a substrate, and a layer of an organic compound covalently bonded to the dielectric layer. The organic compound has a chemical functionality selected from the group consisting essentially of a silicon-halogen, a silicon-alkoxy group, an amino group, an amide group, a reactive carboxylic acid derivative, a chloride ester, or an ortho ester. The organic compound may further include a polar chemical functionality that induces a dipole moment in the organic compound. The organic compound may be arranged as a monolayer on the dielectric layer. An organic semiconducting layer is formed on the layer of the organic compound.

摘要翻译： 本发明的实施例提供一种半导体元件及其形成方法。 该组件包括在衬底上的电介质层和共价键合到电介质层的有机化合物层。 有机化合物具有选自以下的化学官能团：基本上由硅 - 卤素，硅 - 烷氧基，氨基，酰胺基，反应性羧酸衍生物，氯化酯或原酸酯组成的组中。 有机化合物还可以包括在有机化合物中诱导偶极矩的极性化学官能团。 有机化合物可以在介电层上作为单层布置。 在有机化合物的层上形成有机半导体层。

公开(公告)号：US20050213413A1

公开(公告)日：2005-09-29

申请号：US11092968

申请日：2005-03-30

申请人： Gunter Schmid ,  Hagen Klauk ,  Marcus Halik ,  Reimund Engl ,  Andreas Walter

发明人： Gunter Schmid ,  Hagen Klauk ,  Marcus Halik ,  Reimund Engl ,  Andreas Walter

IPC分类号： G11C5/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  C08G61/02 ,  G11C13/0016 ,  G11C2213/72 ,  H01L51/0035 ,  H01L51/004 ,  H01L51/005 ,  H01L51/0591

摘要： Polymers are described which exhibit a resistive hysteresis effect. The polymers include a polymer backbone to which pentaarylcyclopentadienyl radicals are bonded as side groups. A resistive memory element is formed that includes the polymer as a storage medium. By applying a voltage, the memory element can be switched between a nonconductive and a conductive state.

摘要翻译： 描述了表现出电阻滞后效应的聚合物。 聚合物包括作为侧基键合五芳基环戊二烯基的聚合物主链。 形成包含作为存储介质的聚合物的电阻式存储元件。 通过施加电压，可以在非导通状态和导通状态之间切换存储​​元件。

公开(公告)号：US20050191801A1

公开(公告)日：2005-09-01

申请号：US11066330

申请日：2005-02-25

申请人： Ute Zschieschang ,  Hagen Klauk ,  Marcus Halik ,  Guenter Schmid ,  Stefan Braun

发明人： Ute Zschieschang ,  Hagen Klauk ,  Marcus Halik ,  Guenter Schmid ,  Stefan Braun

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L51/05 ,  H01L51/10 ,  H01L51/40

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102

摘要： A method for fabricating a field effect transistor, in which, after the etching of the gate electrode, the removal of the etching mask is omitted since the etching mask serves as a gate dielectric. The etching mask or the dielectric has a self-assembled monolayer of an organic compound.

摘要翻译： 一种用于制造场效应晶体管的方法，其中，在蚀刻栅电极之后，由于蚀刻掩模用作栅极电介质，所以省去了蚀刻掩模。 蚀刻掩模或电介质具有有机化合物的自组装单层。

公开(公告)号：US20050186700A1

公开(公告)日：2005-08-25

申请号：US11062766

申请日：2005-02-22

申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

IPC分类号： C07F7/08 ,  C07F9/38 ,  C08F132/06 ,  C08F132/08 ,  H01L21/316 ,  H01L21/768 ,  H01L51/40 ,  H01L31/0328 ,  H01L21/8234

CPC分类号： H01L51/0516 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31687

摘要： A method for through-plating field effect transistors having a self-assembled monolayer of an organic compound as gate dielectric includes through-plated by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

摘要翻译： 具有有机化合物的自组装单层作为栅极电介质的场效应晶体管的方法包括通过对栅电极材料进行图案化而使具有介电特性的有机化合物与接触孔材料接触， 栅电极材料。 接触孔材料和栅电极材料至少部分地不被覆盖。 接触孔是与栅电极材料不同的材料。 有机化合物的自组装单层形成在栅电极材料上方。 该方法还包括在不去除有机化合物的自组装单层和沉积半导体材料的情况下沉积和图案化源极和漏极接触。