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    Photomask blank, photomask, and methods of manufacturing the same
    32.
    发明授权
    Photomask blank, photomask, and methods of manufacturing the same 有权
    光掩模坯料，光掩模及其制造方法

    公开(公告)号：US08865378B2

    公开(公告)日：2014-10-21

    申请号：US13854439

    申请日：2013-04-01

    申请人： Hiroyuki Iwashita ,  Atsushi Kominato ,  Masahiro Hashimoto ,  Hiroaki Shishido

    发明人： Hiroyuki Iwashita ,  Atsushi Kominato ,  Masahiro Hashimoto ,  Hiroaki Shishido

    IPC分类号： G03F1/46 ,  G03F1/38 ,  G03F1/50 ,  G03F1/54

    CPC分类号： G03F1/50 ,  G03F1/46 ,  G03F1/54

    摘要： A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.

    摘要翻译： 光掩模坯料用于制造要施加具有200nm或更小的波长的曝光光的光掩模。 光掩模坯料具有形成在其上的透光性基板和遮光膜。 遮光膜具有含有过渡金属和硅的遮光层和在遮光层上连续形成并由含有氧和氮中的至少一种的材料制成的前表面抗反射层。 遮光膜对于曝光光具有预定值以下的正面反射率，并且具有能够将曝光波长处的前表面反射率的变化宽度控制在2％以内的特性，当厚度为 前表面抗反射层在2nm的范围内变化。 选择具有能够实现这种特性的折射率n和消光系数k的前表面抗反射层的材料。

    Photomask blank, photomask, and method for manufacturing photomask blank
    33.
    发明授权
    Photomask blank, photomask, and method for manufacturing photomask blank 有权
    光掩模坯料，光掩模以及制造光掩模坯料的方法

    公开(公告)号：US08507155B2

    公开(公告)日：2013-08-13

    申请号：US12935464

    申请日：2009-03-31

    申请人： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto

    发明人： Hiroyuki Iwashita ,  Hiroaki Shishido ,  Atsushi Kominato ,  Masahiro Hashimoto

    IPC分类号： G03F1/46 ,  G03F1/50 ,  G03F1/58 ,  G03F1/80

    CPC分类号： G03F1/46 ,  G03F1/54 ,  G03F1/80

    摘要： A photomask blank for a photomask used with an ArF excimer laser. The photo mask has a light transmissive substrate with a surface on which a light-shielding film is formed. The light-shielding film has a laminated structure comprising a back-surface antireflection layer, a light-shielding layer and a front-surface antireflection layer. The thickness of the entire light-shielding film is 70 nm or less. The back-surface antireflection layer comprises a film containing a metal and having first etching rate. The front-surface antireflection layer comprises a film containing a metal and having a third etching rate. The light-shielding layer comprises a film containing the same metal as that contained in the back-surface antireflection layer or the front-surface antireflection layer, with a second etching rate that is lower than the first and third etching rates. The thickness of the light-shielding layer is 45% or less of the thickness of the entire light-shielding film.

    摘要翻译： 用于与ArF准分子激光器一起使用的光掩模的光掩模坯料。 光掩模具有其上形成有遮光膜的表面的透光基板。 遮光膜具有包括背面防反射层，遮光层和前表面抗反射层的层叠结构。 整个遮光膜的厚度为70nm或更小。 背面抗反射层包括含有金属并具有第一蚀刻速率的膜。 前表面抗反射层包括含有金属并具有第三蚀刻速率的膜。 遮光层包括含有与背面防反射层或前表面抗反射层中所含金属相同的金属的膜，其第二蚀刻速率低于第一和第三蚀刻速率。 遮光层的厚度为整个遮光膜的厚度的45％以下。

    MASK BLANK AND TRANSFER MASK
    34.
    发明申请
    MASK BLANK AND TRANSFER MASK 有权
    遮罩和转印面罩

    公开(公告)号：US20120189946A1

    公开(公告)日：2012-07-26

    申请号：US13384168

    申请日：2010-07-14

    申请人： Masahiro Hashimoto ,  Atsushi Kominato ,  Hiroyuki Iwashita ,  Osamu Nozawa

    发明人： Masahiro Hashimoto ,  Atsushi Kominato ,  Hiroyuki Iwashita ,  Osamu Nozawa

    IPC分类号： G03F1/00 ,  G03F1/50 ,  B82Y30/00

    CPC分类号： G03F1/74 ,  G03F1/50 ,  G03F1/54 ,  G03F1/80

    摘要： Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

    摘要翻译： 提供了能够适当地应用EB缺陷校正的掩模坯料，并且还能够减少遮光膜的厚度。 掩模坯料10用于制造适于施加ArF曝光光的转印掩模，并且在透明基板1上具有遮光膜2.遮光膜2主要由含有过渡金属的材料构成， 硅和选自氧和氮的至少一种或多种元素。 在不被带电粒子照射的状态下，通过含氟物质的遮光膜的蚀刻速度低至少能够确保相对于由氟系物形成的遮光膜的蚀刻速度的蚀刻选择性， 在被照射带电粒子的状态下含有物质。

    PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME
    35.
    发明申请
    PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权
    PHOTOMASK BLANK，PHOTOMASK及其制造方法

    公开(公告)号：US20110318674A1

    公开(公告)日：2011-12-29

    申请号：US13223140

    申请日：2011-08-31

    申请人： Masahiro HASHIMOTO ,  Hiroyuki IWASHITA ,  Atsushi KOMINATO

    发明人： Masahiro HASHIMOTO ,  Hiroyuki IWASHITA ,  Atsushi KOMINATO

    IPC分类号： G03F1/14 ,  G03F1/08

    CPC分类号： G03F1/32 ,  G03F1/46 ,  G03F1/50

    摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.

    摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。

    Photomask blank and method of producing the same, method of producing photomask, and method of producing semiconductor device
    37.
    发明授权
    Photomask blank and method of producing the same, method of producing photomask, and method of producing semiconductor device 有权
    光掩模坯料及其制造方法，制造光掩模的方法以及半导体装置的制造方法

    公开(公告)号：US07901842B2

    公开(公告)日：2011-03-08

    申请号：US12088408

    申请日：2006-09-29

    申请人： Takeyuki Yamada ,  Yasushi Okubo ,  Masao Ushida ,  Hiroyuki Iwashita

    发明人： Takeyuki Yamada ,  Yasushi Okubo ,  Masao Ushida ,  Hiroyuki Iwashita

    IPC分类号： G03F1/00

    CPC分类号： G03F1/54 ,  G03F1/32

    摘要： It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask.A photomask blank of the present invention includes a light-shielding film containing at least chromium on a light-transmitting substrate. The light-shielding film is formed so as to cause a desired film stress in the direction opposite to that of a change in the film stress that is anticipated to be caused in the light-shielding film by heat treatment according to a resist film formed on the light-shielding film. A photomask is produced by patterning the light-shielding film of the photomask blank by dry etching.

    摘要翻译： 提供一种光掩模坯料，当遮光膜被图案化时具有良好的平坦度，因此可以提供良好的掩模图案精度和良好的图案转印精度，以及制造光掩模的方法。 本发明的光掩模坯料包括在透光性基板上至少含有铬的遮光膜。 遮光膜形成为使得在与通过热处理在遮光膜中引起的膜应力变化相反的方向产生期望的膜应力，所述抗蚀剂膜根据形成在 遮光膜。 通过干蚀刻图案化光掩模坯料的遮光膜来制造光掩模。

    PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME
    38.
    发明申请
    PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权
    PHOTOMASK BLANK，PHOTOMASK及其制造方法

    公开(公告)号：US20090246647A1

    公开(公告)日：2009-10-01

    申请号：US12415429

    申请日：2009-03-31

    申请人： Masahiro Hashimoto ,  Hiroyuki Iwashita ,  Atsushi Kominato

    发明人： Masahiro Hashimoto ,  Hiroyuki Iwashita ,  Atsushi Kominato

    IPC分类号： G03F1/00

    CPC分类号： G03F1/32 ,  G03F1/46 ,  G03F1/50

    摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.

    摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。

    Cleaning valve drive unit
    39.
    发明授权
    Cleaning valve drive unit 失效
    清洁阀驱动单元

    公开(公告)号：US07165577B2

    公开(公告)日：2007-01-23

    申请号：US10727045

    申请日：2003-12-04

    申请人： Hiroyuki Iwashita ,  Tsuyoshi Nakasone ,  Katsunori Tomita ,  Takanori Idota ,  Hironao Inoue

    发明人： Hiroyuki Iwashita ,  Tsuyoshi Nakasone ,  Katsunori Tomita ,  Takanori Idota ,  Hironao Inoue

    IPC分类号： F16K31/53

    CPC分类号： E03D9/12 ,  E03D1/32 ,  F16K31/563 ,  Y10T137/86405

    摘要： A cleaning valve drive unit constituted to be able to supply water to a toilet by manual rotational operation of a main shaft in which the main shaft is constituted to be able to pull out from a cleaning operation position to a draining operation position. Whereas an operation limiting mechanism with respect to the main shaft enables to carry out cleaning operation to the toilet by rotational operation around an axis line with respect to the main shaft when the main shaft is disposed at the cleaning operation position, when the main shaft is moved to the draining operation position, the operation limiting mechanism permits to drain water by the rotational operation around the axis line with respect to the main shaft.

    摘要翻译： 一种清洁阀驱动单元，其构成为能够通过主轴构成的主轴的手动旋转操作向厕所供水，以能够从清洁操作位置拉出到排水操作位置。 而主轴相对于主轴的操作限制机构能够通过在主轴设置在清洁操作位置时围绕主轴相对于主轴线的旋转操作对马桶进行清洁操作，而当主轴为主轴时 移动到排水操作位置，操作限制机构允许通过绕轴线相对于主轴的旋转操作来排出水。