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    Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
    33.
    发明授权
    Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer 有权
    铜导体退火工艺采用低温沉积光吸收层进行高速光学退火

    公开(公告)号：US07335611B2

    公开(公告)日：2008-02-26

    申请号：US11199572

    申请日：2005-08-08

    Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

    Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

    IPC: H01L21/4763 ,  H01L21/00

    CPC classification number: B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

    Abstract: A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

    Abstract translation: 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

    Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
    36.
    发明授权
    Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement 失效
    使用表面激活等离子体浸入离子注入的晶体硅晶片转移方法，用于晶片到晶片粘附增强

    公开(公告)号：US07183177B2

    公开(公告)日：2007-02-27

    申请号：US10989993

    申请日：2004-11-16

    Applicant: Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

    Inventor： Amir Al-Bayati ,  Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

    IPC: H01L21/46 ,  H01L21/30

    CPC classification number: H01L21/76254 ,  C23C14/48 ,  C23C16/507 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32412 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/31604 ,  H01L21/318 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L29/6659

    Abstract: A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of a first species in the first surface of at least either of the pair of wafers. The method further includes performing a cleavage ion implantation step on one of the pair of wafers by ion implanting a second species to define a cleavage plane across a diameter of the wafer at the predetermined depth below the top surface of the one wafer. The wafers are then bonded together by placing the first surfaces of the pair of wafers onto one another so as to form an semiconductor-on-insulator structure. The method also includes separating the one wafer along the cleavage plane so as to remove a portion of the one wafer between the second surface and the cleavage plane, whereby to form an exposed cleaved surface of a remaining portion of the one wafer on the semiconductor-on-insulator structure. Finally, the cleaved surface is smoothed, preferably by carrying out a low energy high momentum ion implantation step.

    Abstract translation: 一种从一对半导体晶片制造绝缘体上半导体结构的方法包括在第一晶片的至少第一表面上形成氧化物层，并通过离子注入第一种类进行结合增强注入步骤 在所述一对晶片中的至少一个的第一表面中。 所述方法还包括通过离子注入第二种类来在所述一对晶片之一上执行切割离子注入步骤，以在所述晶片的顶部表面下方的预定深度处限定跨所述晶片的直径的解理面。 然后通过将一对晶片的第一表面放置在彼此上而将晶片结合在一起，以形成绝缘体上半导体结构。 该方法还包括沿着解理平面分离一个晶片，以便去除第二表面和解理面之间的一个晶片的一部分，从而形成半导体芯片上的一个晶片的剩余部分的暴露的切割表面， 绝缘体上的结构。 最后，优选通过进行低能量的高动量离子注入步骤来平滑切割的表面。

    Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage
    38.
    发明授权
    Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage 失效
    等离子体浸入式离子注入装置，其包括具有低离解性和低最小等离子体电压的等离子体源

    公开(公告)号：US07137354B2

    公开(公告)日：2006-11-21

    申请号：US10646458

    申请日：2003-08-22

    Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

    Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

    IPC: G23C16/00 ,  C23F1/00

    CPC classification number: H01J37/32082 ,  H01J37/321

    Abstract: A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region and a first hollow conduit outside of the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across said process region. A gas distribution apparatus is provided on or near an interior surface of the reactor for introducing a process gas containing the species to be ion implanted and a first RE plasma source power applicator for generating a plasma in the chamber.

    Abstract translation: 用于将物质离子注入到工件的表面层中的等离子体浸没离子注入反应器包括具有侧壁和限定腔室的天花板的壳体，以及腔室内的工件支撑基座，其具有面向天花板的工件支撑表面并且限定 大致横跨晶片支撑基座延伸并由侧壁横向限制并且在工件支撑基座和天花板之间轴向延伸的过程区域。 外壳在工艺区域的大致相对侧具有至少第一对开口，在腔室外部具有第一和第二端，第一和第二端连接到第一对开口中的相应开口，以便提供第一凹槽 路径延伸穿过导管并穿过所述过程区域。 气体分配装置设置在反应器的内表面上或附近，用于引入含有要离子注入的物质的处理气体和用于在室中产生等离子体的第一RE等离子体源功率施加器。

    Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
    39.
    发明授权
    Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon 失效
    使用六氟丁二烯或其他重质全氟化碳增强氧化硅蚀刻速率和氮化物选择性

    公开(公告)号：US06797189B2

    公开(公告)日：2004-09-28

    申请号：US09276376

    申请日：1999-03-25

    Applicant: Hoiman (Raymond) Hung ,  Joseph P. Caulfield ,  Hongqing Shan ,  Michael Rice ,  Kenneth S Collins ,  Chunshi Cui

    Inventor： Hoiman (Raymond) Hung ,  Joseph P. Caulfield ,  Hongqing Shan ,  Michael Rice ,  Kenneth S Collins ,  Chunshi Cui

    IPC: H01L213065

    CPC classification number: H01L21/31116

    Abstract: A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in which holes and corners have already been formed, for which the use of xenon also reduces faceting of the oxide. For this use, the relative amount of xenon need not be so high. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases.

    Abstract translation: 等离子体蚀刻工艺，特别适用于在具有非氧化物组成的特征（例如氮化硅）上选择性地蚀刻氧化物，特别是当该特征具有在氧化物蚀刻期间易于刻面的拐角时。 主要含氟气体，优选六氟丁二烯（C 4 F 6）与显着更大量的稀释气氙（Xe）组合，增强氮化物选择性，而不会发生蚀刻停止。 该化学物质也可用于蚀刻已经形成孔和角的氧化物，其中氙的使用也减少了氧化物的刻痕。 对于这种用途，氙的相对量不必太高。 本发明可以与相关的重碳氟化合物和其它氟基蚀刻气体一起使用。

    Active species control with time-modulated plasma
    40.
    发明授权
    Active species control with time-modulated plasma 失效
    具有时间调制等离子体的活性物种控制

    公开(公告)号：US06589437B1

    公开(公告)日：2003-07-08

    申请号：US09262945

    申请日：1999-03-05

    Applicant: Kenneth S. Collins

    Inventor： Kenneth S. Collins

    IPC: H01L2102

    CPC classification number: H01J37/32458 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32422

    Abstract: A method and an apparatus for actively controlling the density of the species generated in a plasma reactor using time-modulation. The method of the present invention includes providing an inductively coupled plasma reactor, irradiating a process gas and time-modulating an energy emission from the RF applicator in order to achieve a desired density of species within a plasma. The time-modulation includes varying an on-time and an off-time of the modulating signal. Moreover, a short on-time and a longer off-time is preferred if the degree of dissociation is to be minimized. The apparatus of the present invention, in which the above method may be carried out, includes an all-semiconductor chamber having a signal modulator. Moreover, the apparatus includes a reactor having various embodiments of a solenoidal antenna and a signal modulator.

    Abstract translation: 一种用于主动控制使用时间调制在等离子体反应器中产生的物质的密度的方法和装置。 本发明的方法包括提供电感耦合等离子体反应器，照射处理气体并对来自RF施加器的能量发射进行时间调制，以实现等离子体内所需的物质密度。 时间调制包括改变调制信号的导通时间和关断时间。 此外，如果解离程度要最小化，则优选短的导通时间和更长的断开时间。 可以实施上述方法的本发明的装置包括具有信号调制器的全半导体室。 此外，该装置包括具有螺线管天线和信号调制器的各种实施例的电抗器。

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