公开(公告)号：US20050023615A1

公开(公告)日：2005-02-03

申请号：US10929424

申请日：2004-08-31

Applicant: Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

Inventor： Kazuo Yano ,  Tomoyuki Ishii ,  Takashi Hashimoto ,  Koichi Seki ,  Masakazu Aoki ,  Takeshi Sakata ,  Yoshinobu Nakagome ,  Kan Takeuchi

IPC: H01L21/8247 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/04 ,  G11C16/28 ,  H01L21/28 ,  H01L21/336 ,  H01L27/01 ,  H01L27/115 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L29/94 ,  H01L31/036 ,  H01L31/062 ,  H01L31/112 ,  H01L31/113

CPC classification number: B82Y10/00 ,  G11C11/22 ,  G11C11/404 ,  G11C16/02 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28 ,  G11C2216/06 ,  G11C2216/08 ,  H01L21/28273 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11551 ,  H01L27/1203 ,  H01L29/42328 ,  H01L29/513 ,  H01L29/66825 ,  H01L29/7613 ,  H01L29/785 ,  H01L29/7888

Abstract: A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

Abstract translation: 一种场效应半导体元件，其具有较少数量的元件和减小的面积，并能够自身存储数据，而不需要在低温下进行冷却;以及采用该半导体元件的存储器件。 栅极沟道电容被设置得如此小，以致捕获捕获一个电子或空穴是否可以根据半导体FET元件的电流的变化来明确且明显地被检测。 通过检测通过在陷阱中捕获电子或空穴而导致的半导体元件的阈值电压的变化，可以在室温下实现数据存储。

公开(公告)号：US06321360B1

公开(公告)日：2001-11-20

申请号：US09580180

申请日：2000-05-26

Applicant: Kan Takeuchi ,  Hiroyuki Tanikawa

Inventor： Kan Takeuchi ,  Hiroyuki Tanikawa

IPC: G11C2900

CPC classification number: G06F11/106

Abstract: A system with a ferroelectric memory has a low probability of soft error thereby decreasing the possibility of serious damage to the system that might result from soft errors. The ferroelectric memory is provided with an overwrite-inhibited memory block 122 for storing this OS (Operating System) and applications, and an overwrite-free memory block 123 which is a work area. The overwrite-inhibited memory block 122 includes a parity bit storage 125. A process for checking and correcting error performed about one a day. A command for starting the error checking and correcting procedures is triggered by a switch such as power source switch. When an error occurs in the ferroelectric memory 120, it is possible to recover the function of the system.

Abstract translation: 具有铁电存储器的系统具有低误差概率，从而降低了可能由软错误导致的系统严重损坏的可能性。 铁电存储器设置有用于存储该OS（操作系统）和应用的重写禁止存储器块122和作为工作区域的无覆盖存储器块123。 重写禁止存储器块122包括奇偶校验位存储器125.用于检查和校正每天约一个执行的错误的处理。 启动错误检查和纠正程序的命令由电源开关等开关触发。 当铁电存储器120发生错误时，可以恢复系统的功能。

公开(公告)号：US6131177A

公开(公告)日：2000-10-10

申请号：US932957

申请日：1997-09-18

Applicant: Kan Takeuchi ,  Hiroyuki Tanikawa

Inventor： Kan Takeuchi ,  Hiroyuki Tanikawa

IPC: G06F12/16 ,  G06F11/10 ,  G11C11/22 ,  G11C11/401 ,  G11C14/00 ,  G11C29/42 ,  G11C29/00

CPC classification number: G06F11/106

Abstract: A system with a ferroelectric memory has a low probability of soft error thereby decreasing the possibility of serious damage to the system that might result from soft errors. The ferroelectric memory is provided with an overwrite-inhibited memory block 122 for storing the OS (Operating System) and applications, and an overwrite-free memory block 123 which is a work area. The overwrite-inhibited memory block 122 includes a parity bit storage 125. A process for checking and correcting error performed about once a day. A command for starting the error checking and correcting procedures is triggered by a switch such as power source switch. When an error occurs in the ferroelectric memory 120, it is possible to recover the function of the system.

Abstract translation: 具有铁电存储器的系统具有低误差概率，从而降低了可能由软错误导致的系统严重损坏的可能性。 铁电存储器设置有用于存储OS（操作系统）和应用的重写禁止存储器块122以及作为工作区域的无覆盖存储器块123。 重写禁止存储器块122包括奇偶校验位存储器125.用于检查和校正每天大约执行一次的错误的处理。 启动错误检查和纠正程序的命令由电源开关等开关触发。 当铁电存储器120发生错误时，可以恢复系统的功能。