公开(公告)号：USD626173S1

公开(公告)日：2010-10-26

申请号：US29328855

申请日：2008-12-03

申请人： Ryoji Inoue ,  Naoki Tashiro ,  Hiroki Nakanishi ,  Yasuo Kotaki ,  Tetsuya Ohashi ,  Koichi Kubo

设计人： Ryoji Inoue ,  Naoki Tashiro ,  Hiroki Nakanishi ,  Yasuo Kotaki ,  Tetsuya Ohashi ,  Koichi Kubo

公开(公告)号：US07755934B2

公开(公告)日：2010-07-13

申请号：US11761772

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/00

CPC分类号： G11C8/08 ,  G11C11/36 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/009 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/147 ,  H01L45/1675

摘要： A resistance change memory device including: a substrate; cell arrays stacked thereabove, each including a matrix layout of memory cells; a write circuit configured to write a pair cell constituted by two neighboring memory cells; and a read circuit configured to read complementary resistance value states of the pair cell as one bit of data, wherein the memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

摘要翻译： 一种电阻变化存储器件，包括：衬底; 单元阵列堆叠在其上，每个包括存储单元的矩阵布局; 写入电路，被配置为写入由两个相邻存储器单元构成的对单元; 以及读取电路，被配置为将所述成对单元的互补电阻值状态读取为一位数据，其中所述存储单元包括用于存储作为信息的电阻值的可变电阻元件，所述电阻值具有由复合化合物组成的记录层， 至少两种阳离子元素，至少一种阳离子元素是具有“d” - 轨道的过渡元素，其中电子未完全填充，相邻阳离子元素之间的最短距离为0.32nm以下。

公开(公告)号：US07729158B2

公开(公告)日：2010-06-01

申请号：US11761282

申请日：2007-06-11

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/00

CPC分类号： G11C5/02 ,  G11C7/18 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/147

摘要： A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, each having memory cells, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read/write circuit; and third vertical wirings disposed the word lines to the read/write circuit. The memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d” orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

摘要翻译： 一种电阻变化存储器件，包括：半导体衬底; 单元阵列堆叠在衬底上，每个阵列具有存储单元，位线和字线; 形成在半导体衬底上的读/写电路; 布置成将位线连接到读/写电路的第一和第二垂直布线; 并且第三垂直布线将字线布置到读/写电路。 存储单元包括用于存储作为信息的电阻值的可变电阻元件，电阻值具有由包含至少两种阳离子元素的复合化合物组成的记录层，至少一种类型的阳离子元素是具有“d “轨道，其中电子不完全填充，相邻阳离子元素之间的最短距离为0.32nm或更小。

公开(公告)号：USD611532S1

公开(公告)日：2010-03-09

申请号：US29320229

申请日：2008-06-24

申请人： Tatsuo Nanjo ,  Naoki Tashiro ,  Yasunori Senshiki ,  Yasuo Kotaki ,  Tetsuya Ohashi ,  Koichi Kubo

设计人： Tatsuo Nanjo ,  Naoki Tashiro ,  Yasunori Senshiki ,  Yasuo Kotaki ,  Tetsuya Ohashi ,  Koichi Kubo

公开(公告)号：US20100053280A1

公开(公告)日：2010-03-04

申请号：US12549878

申请日：2009-08-28

申请人： Tetsuya Ohashi ,  Yasuo Kotaki ,  Ryoji Inoue ,  Koichi Kubo ,  Masashi Ogasawara

发明人： Tetsuya Ohashi ,  Yasuo Kotaki ,  Ryoji Inoue ,  Koichi Kubo ,  Masashi Ogasawara

IPC分类号： B41J2/175

CPC分类号： B41J2/17513

摘要： An ink tank containing ink including a pigment component effectively prevents a problem that an ink having a higher concentration and including a sedimentary pigment is led out, even in a case where the ink tank is left unused on a printing apparatus for a long time. To this end, an ink leading-out port placed in an ink containing chamber, and used to supply the ink to a printing head is located higher than a lowermost portion of the ink containing chamber, and is also formed in an inclined surface inclined to a gravitational direction. Thereby, the sedimentary pigment slides the inclined surface, and thus is settled down in a position away from the ink leading-out port.

摘要翻译： 含有含有颜料成分的油墨的墨罐能够有效地防止即使长时间在打印装置上未使用墨水盒的情况下，也会引起浓度较高且含有沉积颜料的墨水的问题。 为此，放置在墨水容纳室中并用于将油墨供应到打印头的墨水引出口位于墨水容纳室的最下部，并且还形成为倾斜的倾斜面 引力方向。 由此，沉积颜料使倾斜面滑动，因此在远离墨水导出口的位置上沉降。

公开(公告)号：US07663132B2

公开(公告)日：2010-02-16

申请号：US11761864

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： H01L29/04

CPC分类号： G11C13/0007 ,  G11C11/5678 ,  G11C11/5685 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2013/0092 ,  G11C2211/5622 ,  G11C2211/5631 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2472 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/147

摘要： A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

摘要翻译： 一种电阻变化存储装置，包括基板，形成在基板上方以彼此绝缘的第一和第二布线以及设置在第一和第二布线之间的存储单元，其中存储单元包括：可变电阻元件，用于存储为信息 电阻值 和与可变电阻元件串联连接的肖特基二极管。 可变电阻元件具有由AxMyOz表示的第一复合化合物形成的记录层（其中“A”和“M”是彼此不同的阳离子元素;“O”氧; 0.5 <= x <= 1.5,0.5 < = y <= 2.5和1.5 <= z <= 4.5）以及含有至少一个过渡元素和用于容纳阳离子离子的空腔部位的第二复合化合物。

公开(公告)号：US20090220257A1

公开(公告)日：2009-09-03

申请号：US12393492

申请日：2009-02-26

申请人： Shusaku TSUSAKA ,  Yoshiyuki OKAZAKI ,  Koichi KUBO ,  Takeshi YAMANAKA

发明人： Shusaku TSUSAKA ,  Yoshiyuki OKAZAKI ,  Koichi KUBO ,  Takeshi YAMANAKA

IPC分类号： G03G21/12

CPC分类号： G03G21/12 ,  G03G21/105 ,  G03G2215/0802

摘要： A waste collecting device includes a first box including a top surface having a first opening, a bottom surface opposed to the top surface, and side surfaces connecting the top surface and the bottom surface and having a second opening, wherein the top surface, the bottom surface, and the side surfaces define a space allowing waste to be accommodated therein; a second box including a top surface, a bottom surface opposed to the top surface, and side surfaces connecting the top surface and the bottom surface and having a third opening, the third opening being in communication with the second opening; and a sending unit disposed in the first box and configured to send the waste in a direction away from the second box.

摘要翻译： 废物收集装置包括：第一盒，包括具有第一开口的顶表面，与顶表面相对的底表面以及连接顶表面和底表面并具有第二开口的侧表面，其中顶表面，底部 表面，并且侧表面限定允许在其中容纳废物的空间; 第二盒，包括顶表面，与顶表面相对的底表面，以及连接顶表面和底表面的侧表面，并具有第三开口，第三开口与第二开口连通; 以及发送单元，其布置在所述第一箱中并且被配置为沿远离所述第二箱的方向发送废物。

公开(公告)号：US07525772B2

公开(公告)日：2009-04-28

申请号：US11370185

申请日：2006-03-08

申请人： Katsuhiko Koui ,  Takashi Tateyama, legal representative ,  Tomomi Funayama ,  Koichi Kubo ,  Hitoshi Iwasaki ,  Hideaki Fukuzawa

发明人： Kohichi Tateyama

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  H01L43/08

摘要： A magnetoresistive device includes a magnetoresistive film and a pair of electrodes for applying a sense current substantially perpendicularly to the magnetoresistive film. The magnetoresistive film includes a magnetization pinned film including a first ferromagnetic layer having a magnetization direction substantially pinned in one direction, a magnetization free film including a second ferromagnetic layer whose magnetization direction changes in accordance with an external magnetic field applied thereto, an intermediate layer formed between the magnetization pinned film and the magnetization free film and having an insulating film and a metal conduction portion extending in the film thickness direction of the insulating film, and a layer containing an electrovalent or covalent compound formed near the metal conduction portion.

摘要翻译： 磁阻器件包括磁阻膜和用于施加基本垂直于磁阻膜的感测电流的一对电极。 磁阻膜包括磁化固定膜，其包括具有在一个方向上基本固定的磁化方向的第一铁磁层，包含其磁化方向根据施加到其的外部磁场而变化的第二铁磁层的无磁化膜，形成的中间层 在磁化固化膜和无磁化膜之间具有绝缘膜和在绝缘膜的膜厚度方向上延伸的金属导电部分，以及在金属导电部分附近形成含有电价或共价化合物的层。

公开(公告)号：US20080231986A1

公开(公告)日：2008-09-25

申请号：US12051613

申请日：2008-03-19

申请人： Shinya Aoki ,  Koichi Kubo ,  Junichi Ito ,  Junichi Akiyama

发明人： Shinya Aoki ,  Koichi Kubo ,  Junichi Ito ,  Junichi Akiyama

IPC分类号： G11B21/02

CPC分类号： G11B5/59655 ,  B82Y10/00 ,  G01Q80/00 ,  G11B5/59688 ,  G11B9/04 ,  G11B9/1454 ,  G11B9/1481

摘要： An information recording/reproducing device according to an example of the present invention includes a first head and a second head each having a conductive region formed of a conductive material, a recording medium having a data area from which data is read by the first head, and a servo burst area from which a servo burst signal is read by the second head, a driver for positioning the first head and the recording medium based on the servo burst signal, and a resistance element for covering a surface of the conductive region of the second head.

摘要翻译： 根据本发明的示例的信息记录/再现装置包括：第一头部和第二头部，每个头部和第二头部均具有由导电材料形成的导电区域;记录介质，具有由第一头部读取数据的数据区域; 以及伺服脉冲串区域，伺服脉冲串信号由第二磁头读取，用于基于伺服脉冲串信号定位第一磁头和记录介质的驱动器，以及用于覆盖所述第二磁头的导电区域的表面的电阻元件 第二个头。

公开(公告)号：US07400522B2

公开(公告)日：2008-07-15

申请号：US11761397

申请日：2007-06-12

申请人： Haruki Toda ,  Koichi Kubo

发明人： Haruki Toda ,  Koichi Kubo

IPC分类号： G11C11/00

CPC分类号： G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0014 ,  G11C13/0016 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0042 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/147 ,  H01L45/1675

摘要： A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

摘要翻译： 一种电阻变化存储器件，包括：半导体衬底; 形成在所述半导体衬底上的至少一个单元阵列，每个存储单元具有可变电阻元件和存取元件的堆叠结构，所述存取元件具有在十倍或更多的一定电压范围内的截止电阻值 与选择状态一样高; 以及形成在半导体衬底上的单元阵列下面的读/写电路，其中，所述可变电阻元件包括由由A x M y表示的第一复合化合物形成的记录层， 其中“A”和“M”是彼此不同的阳离子元素;“O”氧; 0.5 <= x <= 1.5,0.5 <= y <= 2.5和 1.5 <= z <= 4.5）和包含至少一个过渡元素和用于容纳阳离子离子的空腔部位的第二复合化合物。